JPS5257789A - Photo coupled semiconductor device - Google Patents

Photo coupled semiconductor device

Info

Publication number
JPS5257789A
JPS5257789A JP13292475A JP13292475A JPS5257789A JP S5257789 A JPS5257789 A JP S5257789A JP 13292475 A JP13292475 A JP 13292475A JP 13292475 A JP13292475 A JP 13292475A JP S5257789 A JPS5257789 A JP S5257789A
Authority
JP
Japan
Prior art keywords
semiconductor device
elements
coupled semiconductor
light emitting
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13292475A
Other languages
English (en)
Japanese (ja)
Other versions
JPS557709B2 (enrdf_load_html_response
Inventor
Yoshitaka Sugawara
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13292475A priority Critical patent/JPS5257789A/ja
Priority to CA263,453A priority patent/CA1061884A/en
Priority to NL7612271A priority patent/NL171758C/xx
Priority to DE2650770A priority patent/DE2650770C3/de
Publication of JPS5257789A publication Critical patent/JPS5257789A/ja
Publication of JPS557709B2 publication Critical patent/JPS557709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP13292475A 1975-11-07 1975-11-07 Photo coupled semiconductor device Granted JPS5257789A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP13292475A JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device
CA263,453A CA1061884A (en) 1975-11-07 1976-10-15 Optoelectronic device having improved integration density and photocoupling efficiency
NL7612271A NL171758C (nl) 1975-11-07 1976-11-04 Opto-electrische koppelinrichting.
DE2650770A DE2650770C3 (de) 1975-11-07 1976-11-05 Opto-elektronische Koppeleinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13292475A JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device

Publications (2)

Publication Number Publication Date
JPS5257789A true JPS5257789A (en) 1977-05-12
JPS557709B2 JPS557709B2 (enrdf_load_html_response) 1980-02-27

Family

ID=15092682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13292475A Granted JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device

Country Status (4)

Country Link
JP (1) JPS5257789A (enrdf_load_html_response)
CA (1) CA1061884A (enrdf_load_html_response)
DE (1) DE2650770C3 (enrdf_load_html_response)
NL (1) NL171758C (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093880A1 (ja) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. 半導体装置及びその製造方法
WO2008123020A1 (ja) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. 半導体装置及びその製造方法
JP2016171235A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体モジュール

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (de) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg Opto-elektronisches bauelement

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093880A1 (ja) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. 半導体装置及びその製造方法
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
JP5295783B2 (ja) * 2007-02-02 2013-09-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
WO2008123020A1 (ja) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. 半導体装置及びその製造方法
US7855425B2 (en) 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP2016171235A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体モジュール
US10204891B2 (en) 2015-03-13 2019-02-12 Kabushiki Kaisha Toshiba Semiconductor module

Also Published As

Publication number Publication date
NL7612271A (nl) 1977-05-10
NL171758B (nl) 1982-12-01
NL171758C (nl) 1983-05-02
DE2650770B2 (de) 1980-06-12
CA1061884A (en) 1979-09-04
JPS557709B2 (enrdf_load_html_response) 1980-02-27
DE2650770A1 (de) 1977-05-18
DE2650770C3 (de) 1981-02-26

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