CA1061884A - Optoelectronic device having improved integration density and photocoupling efficiency - Google Patents
Optoelectronic device having improved integration density and photocoupling efficiencyInfo
- Publication number
- CA1061884A CA1061884A CA263,453A CA263453A CA1061884A CA 1061884 A CA1061884 A CA 1061884A CA 263453 A CA263453 A CA 263453A CA 1061884 A CA1061884 A CA 1061884A
- Authority
- CA
- Canada
- Prior art keywords
- light emitting
- light
- zones
- signal
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 36
- 230000010354 integration Effects 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 230000000875 corresponding effect Effects 0.000 claims description 24
- 229910000679 solder Inorganic materials 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- CBQYNPHHHJTCJS-UHFFFAOYSA-N Alline Chemical compound C1=CC=C2C3(O)CCN(C)C3NC2=C1 CBQYNPHHHJTCJS-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000002674 ointment Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13292475A JPS5257789A (en) | 1975-11-07 | 1975-11-07 | Photo coupled semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1061884A true CA1061884A (en) | 1979-09-04 |
Family
ID=15092682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA263,453A Expired CA1061884A (en) | 1975-11-07 | 1976-10-15 | Optoelectronic device having improved integration density and photocoupling efficiency |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5257789A (enrdf_load_html_response) |
| CA (1) | CA1061884A (enrdf_load_html_response) |
| DE (1) | DE2650770C3 (enrdf_load_html_response) |
| NL (1) | NL171758C (enrdf_load_html_response) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855425B2 (en) | 2007-03-09 | 2010-12-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US8188497B2 (en) | 2007-02-02 | 2012-05-29 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and method of manufacturing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3128187A1 (de) * | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | Opto-elektronisches bauelement |
| JP6371725B2 (ja) * | 2015-03-13 | 2018-08-08 | 株式会社東芝 | 半導体モジュール |
-
1975
- 1975-11-07 JP JP13292475A patent/JPS5257789A/ja active Granted
-
1976
- 1976-10-15 CA CA263,453A patent/CA1061884A/en not_active Expired
- 1976-11-04 NL NL7612271A patent/NL171758C/xx not_active IP Right Cessation
- 1976-11-05 DE DE2650770A patent/DE2650770C3/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8188497B2 (en) | 2007-02-02 | 2012-05-29 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7855425B2 (en) | 2007-03-09 | 2010-12-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7612271A (nl) | 1977-05-10 |
| NL171758B (nl) | 1982-12-01 |
| NL171758C (nl) | 1983-05-02 |
| DE2650770B2 (de) | 1980-06-12 |
| JPS557709B2 (enrdf_load_html_response) | 1980-02-27 |
| JPS5257789A (en) | 1977-05-12 |
| DE2650770A1 (de) | 1977-05-18 |
| DE2650770C3 (de) | 1981-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4122479A (en) | Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body | |
| US4857746A (en) | Method for producing an optocoupler | |
| US5003357A (en) | Semiconductor light emitting device | |
| US4908685A (en) | Magnetoelectric transducer | |
| US6943378B2 (en) | Opto-coupler | |
| US7179670B2 (en) | Flip-chip light emitting diode device without sub-mount | |
| CA1112749A (en) | Light-emitting semiconductor device and method of fabricating same | |
| US8319335B2 (en) | Power semiconductor module, power semiconductor module assembly and method for fabricating a power semiconductor module assembly | |
| US5311402A (en) | Semiconductor device package having locating mechanism for properly positioning semiconductor device within package | |
| EP0313174B1 (en) | Method for producing optical devices and packages | |
| US4143385A (en) | Photocoupler | |
| US4209358A (en) | Method of fabricating a microelectronic device utilizing unfilled epoxy adhesive | |
| JP3054021B2 (ja) | 化合物半導体装置 | |
| CA1142252A (en) | Semiconductor optoelectronic device package | |
| US3938173A (en) | Optically coupled semiconductive switching devices | |
| KR19990082182A (ko) | Led 매트릭스 | |
| CA1061884A (en) | Optoelectronic device having improved integration density and photocoupling efficiency | |
| US4530001A (en) | High voltage integrated semiconductor devices using a thermoplastic resin layer | |
| US4017962A (en) | Integrated array of optical fibers and thin film optical detectors, and method for fabricating the same | |
| JPH10209487A (ja) | 固体リレーおよびその製造方法 | |
| US3987300A (en) | Integrated array of optical fibers and thin film optical detectors, and method for fabricating the same | |
| US10559556B2 (en) | Optoelectronic semiconductor component | |
| US4375606A (en) | Microelectronic device | |
| KR890002811B1 (ko) | 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지 | |
| US3471752A (en) | Semiconductor device with an insulating body interposed between a semiconductor element and a part of a casing |