JPS5253673A - Device and production for semiconductor - Google Patents
Device and production for semiconductorInfo
- Publication number
- JPS5253673A JPS5253673A JP12923775A JP12923775A JPS5253673A JP S5253673 A JPS5253673 A JP S5253673A JP 12923775 A JP12923775 A JP 12923775A JP 12923775 A JP12923775 A JP 12923775A JP S5253673 A JPS5253673 A JP S5253673A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- production
- performance
- improve
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12923775A JPS5253673A (en) | 1975-10-29 | 1975-10-29 | Device and production for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12923775A JPS5253673A (en) | 1975-10-29 | 1975-10-29 | Device and production for semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5253673A true JPS5253673A (en) | 1977-04-30 |
JPS5523469B2 JPS5523469B2 (ja) | 1980-06-23 |
Family
ID=15004561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12923775A Granted JPS5253673A (en) | 1975-10-29 | 1975-10-29 | Device and production for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5253673A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5578542A (en) * | 1978-12-11 | 1980-06-13 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
JPS55107259A (en) * | 1979-02-08 | 1980-08-16 | Shindengen Electric Mfg Co Ltd | Power transistor |
JPS5630760A (en) * | 1979-08-22 | 1981-03-27 | Seiko Instr & Electronics Ltd | Lateral type bipolar transistor |
JPS57170546A (en) * | 1981-03-30 | 1982-10-20 | Ibm | Semiconductor element |
JPH02283030A (ja) * | 1989-04-25 | 1990-11-20 | Fuji Electric Co Ltd | バイポーラトランジスタを備えた半導体装置 |
JPH0471235A (ja) * | 1990-07-11 | 1992-03-05 | Nec Yamagata Ltd | 半導体装置 |
US7902633B2 (en) | 2006-05-29 | 2011-03-08 | Seiko Instruments Inc. | Longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of the base |
-
1975
- 1975-10-29 JP JP12923775A patent/JPS5253673A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5578542A (en) * | 1978-12-11 | 1980-06-13 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
JPS55107259A (en) * | 1979-02-08 | 1980-08-16 | Shindengen Electric Mfg Co Ltd | Power transistor |
JPS5630760A (en) * | 1979-08-22 | 1981-03-27 | Seiko Instr & Electronics Ltd | Lateral type bipolar transistor |
JPS57170546A (en) * | 1981-03-30 | 1982-10-20 | Ibm | Semiconductor element |
JPH0253944B2 (ja) * | 1981-03-30 | 1990-11-20 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JPH02283030A (ja) * | 1989-04-25 | 1990-11-20 | Fuji Electric Co Ltd | バイポーラトランジスタを備えた半導体装置 |
JPH0471235A (ja) * | 1990-07-11 | 1992-03-05 | Nec Yamagata Ltd | 半導体装置 |
US7902633B2 (en) | 2006-05-29 | 2011-03-08 | Seiko Instruments Inc. | Longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of the base |
Also Published As
Publication number | Publication date |
---|---|
JPS5523469B2 (ja) | 1980-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51127682A (en) | Manufacturing process of semiconductor device | |
JPS535581A (en) | Schottky gate type field effect transistor | |
JPS51127681A (en) | Manufacturing process of semiconductor device | |
JPS5253673A (en) | Device and production for semiconductor | |
JPS5324277A (en) | Semiconductor devic e and its production | |
JPS5223263A (en) | Method of manufacturing semiconductor device | |
JPS53124087A (en) | Manufacture of semiconductor device | |
JPS5258483A (en) | Junction type field effect semiconductor device and its production | |
JPS538074A (en) | Mis type semiconductor device | |
JPS5363871A (en) | Production of semiconductor device | |
JPS5228879A (en) | Semiconductor device and method for its production | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5261960A (en) | Production of semiconductor device | |
JPS5225582A (en) | Production method of semiconductor device | |
JPS51126077A (en) | Manufacturing method of semi-conductor equpment | |
JPS5329086A (en) | Production of semiconductor device | |
JPS5365079A (en) | Semiconductor device | |
JPS5310286A (en) | Production of semiconductor device | |
JPS5372474A (en) | Manufacture for field effect transistor | |
JPS52123879A (en) | Mos type semiconductor device and its production | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS528787A (en) | Semiconductor device process | |
JPS52122475A (en) | Production of semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS5217768A (en) | Production method of semi-conductor device |