JPS5245296A - Semiconductive phototransmission pass and semiconductor emission devic e used it - Google Patents

Semiconductive phototransmission pass and semiconductor emission devic e used it

Info

Publication number
JPS5245296A
JPS5245296A JP12116275A JP12116275A JPS5245296A JP S5245296 A JPS5245296 A JP S5245296A JP 12116275 A JP12116275 A JP 12116275A JP 12116275 A JP12116275 A JP 12116275A JP S5245296 A JPS5245296 A JP S5245296A
Authority
JP
Japan
Prior art keywords
phototransmission
devic
semiconductive
pass
semiconductor emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12116275A
Other languages
English (en)
Japanese (ja)
Inventor
Hitoshi Kawaguchi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12116275A priority Critical patent/JPS5245296A/ja
Priority to GB37000/76A priority patent/GB1557061A/en
Priority to US05/725,777 priority patent/US4128815A/en
Priority to DE2643503A priority patent/DE2643503C3/de
Priority to FR7630119A priority patent/FR2327657A1/fr
Priority to CA262,803A priority patent/CA1072666A/en
Publication of JPS5245296A publication Critical patent/JPS5245296A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Led Devices (AREA)
JP12116275A 1975-10-07 1975-10-07 Semiconductive phototransmission pass and semiconductor emission devic e used it Pending JPS5245296A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP12116275A JPS5245296A (en) 1975-10-07 1975-10-07 Semiconductive phototransmission pass and semiconductor emission devic e used it
GB37000/76A GB1557061A (en) 1975-10-07 1976-09-07 Single transverse mode operation in double heterostructure junction laser
US05/725,777 US4128815A (en) 1975-10-07 1976-09-23 Single transverse mode operation in double heterostructure junction laser
DE2643503A DE2643503C3 (de) 1975-10-07 1976-09-28 Verfahren zur Herstellung eines Injektionslasers
FR7630119A FR2327657A1 (fr) 1975-10-07 1976-10-06 Laser a jonction a double heterostructure fonctionnant dans un seul mode transversal
CA262,803A CA1072666A (en) 1975-10-07 1976-10-06 Single transverse mode operation in double heterostructure junction laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12116275A JPS5245296A (en) 1975-10-07 1975-10-07 Semiconductive phototransmission pass and semiconductor emission devic e used it

Publications (1)

Publication Number Publication Date
JPS5245296A true JPS5245296A (en) 1977-04-09

Family

ID=14804366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12116275A Pending JPS5245296A (en) 1975-10-07 1975-10-07 Semiconductive phototransmission pass and semiconductor emission devic e used it

Country Status (6)

Country Link
US (1) US4128815A (enExample)
JP (1) JPS5245296A (enExample)
CA (1) CA1072666A (enExample)
DE (1) DE2643503C3 (enExample)
FR (1) FR2327657A1 (enExample)
GB (1) GB1557061A (enExample)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413284A (en) * 1977-07-01 1979-01-31 Fujitsu Ltd Semiconductor light emitting device
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5423487A (en) * 1977-07-25 1979-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconuctor laser of current stenosing type
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device
JPS57149788A (en) * 1982-02-17 1982-09-16 Hitachi Ltd Injection semiconductor laser element
JPS6045085A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6045086A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064490A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064488A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064492A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS60212727A (ja) * 1984-04-06 1985-10-25 Matsushita Electric Ind Co Ltd 装荷型方向性結合器
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPS60249117A (ja) * 1984-05-25 1985-12-09 Nec Corp 導波型光素子
JPS6113222A (ja) * 1984-06-29 1986-01-21 Nec Corp 集積化導波型光素子
JPS62191822A (ja) * 1986-02-18 1987-08-22 Nippon Telegr & Teleph Corp <Ntt> 量子井戸形光変調器およびその製造方法
JPH03119311A (ja) * 1989-10-03 1991-05-21 Nec Corp 光変調器
JPH0521904A (ja) * 1991-07-10 1993-01-29 Nec Corp 半導体光制御素子およびその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558642A (en) * 1977-04-01 1980-01-09 Standard Telephones Cables Ltd Injection lasers
FR2458158A1 (fr) * 1979-06-01 1980-12-26 Thomson Csf Diode laser a emission localisee et emetteur opto-electronique utilisant une telle diode
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
GB2172141B (en) * 1985-03-08 1988-11-16 Stc Plc Single heterostructure laser chip manufacture
DE3610333A1 (de) * 1985-04-19 1986-11-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung eines oberflaechengitters mit einer bestimmten gitterkonstanten auf einem tieferliegenden oberflaechenbereich einer mesastruktur
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JP6665279B2 (ja) * 2017-09-14 2020-03-13 三菱電機株式会社 半導体レーザ装置
CN114204417B (zh) * 2021-12-13 2023-03-24 山东中芯光电科技有限公司 高功率半导体激光器的光芯片结构及其制备方法、激光器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894378A (enExample) * 1972-03-13 1973-12-05
JPS4924084A (enExample) * 1972-06-26 1974-03-04

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993964A (en) * 1974-07-26 1976-11-23 Nippon Electric Company, Ltd. Double heterostructure stripe geometry semiconductor laser device
SU511794A1 (ru) * 1973-05-28 1976-10-05 Предприятие П/Я А-1172 Способ получени полупроводниковой светоизлучающей структуры

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894378A (enExample) * 1972-03-13 1973-12-05
JPS4924084A (enExample) * 1972-06-26 1974-03-04

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413284A (en) * 1977-07-01 1979-01-31 Fujitsu Ltd Semiconductor light emitting device
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5423487A (en) * 1977-07-25 1979-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconuctor laser of current stenosing type
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device
JPS57149788A (en) * 1982-02-17 1982-09-16 Hitachi Ltd Injection semiconductor laser element
JPS6045085A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6045086A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064490A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064488A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064492A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS60212727A (ja) * 1984-04-06 1985-10-25 Matsushita Electric Ind Co Ltd 装荷型方向性結合器
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPS60249117A (ja) * 1984-05-25 1985-12-09 Nec Corp 導波型光素子
JPS6113222A (ja) * 1984-06-29 1986-01-21 Nec Corp 集積化導波型光素子
JPS62191822A (ja) * 1986-02-18 1987-08-22 Nippon Telegr & Teleph Corp <Ntt> 量子井戸形光変調器およびその製造方法
JPH03119311A (ja) * 1989-10-03 1991-05-21 Nec Corp 光変調器
JPH0521904A (ja) * 1991-07-10 1993-01-29 Nec Corp 半導体光制御素子およびその製造方法

Also Published As

Publication number Publication date
CA1072666A (en) 1980-02-26
DE2643503B2 (de) 1979-01-04
FR2327657A1 (fr) 1977-05-06
DE2643503A1 (de) 1977-04-14
FR2327657B1 (enExample) 1983-05-27
DE2643503C3 (de) 1979-09-13
US4128815A (en) 1978-12-05
GB1557061A (en) 1979-12-05

Similar Documents

Publication Publication Date Title
JPS5245296A (en) Semiconductive phototransmission pass and semiconductor emission devic e used it
NL7510493A (nl) Inrichting met heterostructuur voorzien van taps verlopende optische koppelaars.
NL7712845A (nl) Ultraviolet licht absorberend mengsel.
GB1547180A (en) Semiconductor laser with light guide
JPS5320923A (en) Thermodevelopable light sensitive material
NL185251C (nl) Halfgeleiderlichtbron.
CA927009A (en) Thin film optoelectronic semiconductor device using light coupling
JPS5251955A (en) Optical semiconductor device
JPS5361986A (en) Semiconductor light emitting device
JPS5249021A (en) Antistaticity emproved photographic light sensitive material
JPS51146188A (en) Diode device
JPS536057A (en) Shielding and protecting device
JPS51139787A (en) Semiconductor light emitting device
JPS5278392A (en) Optical semiconductor device
JPS52125286A (en) Radiating device for bluelight
JPS5317351A (en) Optical filter
JPS53115247A (en) Light intensity modulating and optical path changing device using prisms
JPS5224480A (en) Semiconductor laser
JPS5354905A (en) Optical transmitting/receiving device
JPS5214392A (en) Semiconductor laser
GB803347A (en) Improvements in or relating to optical systems
JPS53112081A (en) Photo integrated semiconductor device
SE413715B (sv) Sett och anordning for att forbettra en som in- eller utgangstransformator avsedd blockeringstransformators egenskaper
JPS5370822A (en) Color photographic light sensitive material
JPS5212880A (en) Electron-cooled type device for detecting rays of radiant light