JPS57149788A - Injection semiconductor laser element - Google Patents

Injection semiconductor laser element

Info

Publication number
JPS57149788A
JPS57149788A JP2274282A JP2274282A JPS57149788A JP S57149788 A JPS57149788 A JP S57149788A JP 2274282 A JP2274282 A JP 2274282A JP 2274282 A JP2274282 A JP 2274282A JP S57149788 A JPS57149788 A JP S57149788A
Authority
JP
Japan
Prior art keywords
layer
thickness
2mum
liquidus
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2274282A
Other languages
Japanese (ja)
Inventor
Kunio Aiki
Ryoichi Ito
Kazutoshi Saito
Noriyuki Shige
Konen Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2274282A priority Critical patent/JPS57149788A/en
Publication of JPS57149788A publication Critical patent/JPS57149788A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Abstract

PURPOSE:To increase reliability without inducing a crystal defect by a method wherein the third semiconductor layer is provided with a region discontinuously changing the lateral refractive index and laser oscillation is limited to basic lateral mode in injecting current to an active region. CONSTITUTION:After continuously applying liquidus growth to an n-Ga0.66Al0.35 AS layer 2 with a thickness of 2mum, n-Ga0.95Al0.05AS active region 3 with a thickness of 0.15mum, p-Ga0.65Al0.35S layer 4 with a thickness of 2mum on a GaAS substrate 1. The layer 4 is etched in belt shape with a width of 6mum. And liquidus growth is applied to an nGa0.6Al0.4AS layer 5 on the layer 4 up to the same height as that of the layer 4. After finishing a process. Zn6 is diffused to the upper surface of the layer 4 to provide an ohmic electrode 7 and an electrode 8 is also installed at the lower surface of the substrate 1. Parallel resonance reflection surfaces are mutually made to the surfaces 10, 11 of elements by clevage. In this way a crystal defect will not be induced and high reliability can be obtained.
JP2274282A 1982-02-17 1982-02-17 Injection semiconductor laser element Pending JPS57149788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2274282A JPS57149788A (en) 1982-02-17 1982-02-17 Injection semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2274282A JPS57149788A (en) 1982-02-17 1982-02-17 Injection semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS57149788A true JPS57149788A (en) 1982-09-16

Family

ID=12091157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2274282A Pending JPS57149788A (en) 1982-02-17 1982-02-17 Injection semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57149788A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device
JPS5228887A (en) * 1975-08-30 1977-03-04 Fujitsu Ltd Semiconductive emitter device
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228281A (en) * 1975-08-28 1977-03-03 Fujitsu Ltd Light emitting semiconductor device
JPS5228887A (en) * 1975-08-30 1977-03-04 Fujitsu Ltd Semiconductive emitter device
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser

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