JPS4894378A - - Google Patents
Info
- Publication number
- JPS4894378A JPS4894378A JP47025644A JP2564472A JPS4894378A JP S4894378 A JPS4894378 A JP S4894378A JP 47025644 A JP47025644 A JP 47025644A JP 2564472 A JP2564472 A JP 2564472A JP S4894378 A JPS4894378 A JP S4894378A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10P50/646—
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564472A JPS5321275B2 (enExample) | 1972-03-13 | 1972-03-13 | |
| GB1184073A GB1419695A (enExample) | 1972-03-13 | 1973-03-12 | |
| DE2312162A DE2312162C3 (de) | 1972-03-13 | 1973-03-12 | Halbleiterlaserplättchen und Verfahren zu seiner Herstellung |
| NL7303449.A NL159536B (nl) | 1972-03-13 | 1973-03-12 | Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan. |
| US05/612,103 US4142160A (en) | 1972-03-13 | 1975-09-10 | Hetero-structure injection laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564472A JPS5321275B2 (enExample) | 1972-03-13 | 1972-03-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4894378A true JPS4894378A (enExample) | 1973-12-05 |
| JPS5321275B2 JPS5321275B2 (enExample) | 1978-07-01 |
Family
ID=12171529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2564472A Expired JPS5321275B2 (enExample) | 1972-03-13 | 1972-03-13 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5321275B2 (enExample) |
| DE (1) | DE2312162C3 (enExample) |
| GB (1) | GB1419695A (enExample) |
| NL (1) | NL159536B (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51104287A (ja) * | 1975-03-12 | 1976-09-14 | Hitachi Ltd | Handotaireezasochi |
| JPS5215280A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Cleavage semiconductor laser equipped with side surface light take-out waveguide |
| JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS62157339A (ja) * | 1986-11-28 | 1987-07-13 | Hitachi Ltd | 情報再生装置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
| NL176323C (nl) * | 1975-03-11 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting voor het opwekken van incoherente straling. |
| NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
| DE2760112C2 (enExample) * | 1976-07-02 | 1989-05-18 | N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl | |
| US4328508A (en) | 1979-04-02 | 1982-05-04 | Rca Corporation | III-V Quaternary alloy photodiode |
| CA2006597A1 (en) * | 1988-12-26 | 1990-06-26 | Kazuo Kogure | Method for manufacturing compound semiconductor devices and a compound semiconductor device |
| US5359619A (en) * | 1992-02-20 | 1994-10-25 | Sumitomo Electric Industries, Ltd. | Multi-beam semiconductor laser and method for producing the same |
| JP4189610B2 (ja) * | 1998-05-08 | 2008-12-03 | ソニー株式会社 | 光電変換素子およびその製造方法 |
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1972
- 1972-03-13 JP JP2564472A patent/JPS5321275B2/ja not_active Expired
-
1973
- 1973-03-12 DE DE2312162A patent/DE2312162C3/de not_active Expired
- 1973-03-12 NL NL7303449.A patent/NL159536B/xx not_active IP Right Cessation
- 1973-03-12 GB GB1184073A patent/GB1419695A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51104287A (ja) * | 1975-03-12 | 1976-09-14 | Hitachi Ltd | Handotaireezasochi |
| JPS5215280A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Cleavage semiconductor laser equipped with side surface light take-out waveguide |
| JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS62157339A (ja) * | 1986-11-28 | 1987-07-13 | Hitachi Ltd | 情報再生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2312162B2 (de) | 1977-07-14 |
| NL159536B (nl) | 1979-02-15 |
| DE2312162C3 (de) | 1978-03-09 |
| JPS5321275B2 (enExample) | 1978-07-01 |
| NL7303449A (enExample) | 1973-09-17 |
| DE2312162A1 (de) | 1973-10-04 |
| GB1419695A (enExample) | 1975-12-31 |