NL7303449A - - Google Patents
Info
- Publication number
- NL7303449A NL7303449A NL7303449A NL7303449A NL7303449A NL 7303449 A NL7303449 A NL 7303449A NL 7303449 A NL7303449 A NL 7303449A NL 7303449 A NL7303449 A NL 7303449A NL 7303449 A NL7303449 A NL 7303449A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H10P50/646—
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564472A JPS5321275B2 (enExample) | 1972-03-13 | 1972-03-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL7303449A true NL7303449A (enExample) | 1973-09-17 |
| NL159536B NL159536B (nl) | 1979-02-15 |
Family
ID=12171529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7303449.A NL159536B (nl) | 1972-03-13 | 1973-03-12 | Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan. |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5321275B2 (enExample) |
| DE (1) | DE2312162C3 (enExample) |
| GB (1) | GB1419695A (enExample) |
| NL (1) | NL159536B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
| NL176323C (nl) * | 1975-03-11 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting voor het opwekken van incoherente straling. |
| JPS606118B2 (ja) * | 1975-03-12 | 1985-02-15 | 株式会社日立製作所 | 半導体レーザ装置 |
| JPS5215280A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Cleavage semiconductor laser equipped with side surface light take-out waveguide |
| JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
| NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
| DE2760112C2 (enExample) * | 1976-07-02 | 1989-05-18 | N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl | |
| US4328508A (en) | 1979-04-02 | 1982-05-04 | Rca Corporation | III-V Quaternary alloy photodiode |
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS62157339A (ja) * | 1986-11-28 | 1987-07-13 | Hitachi Ltd | 情報再生装置 |
| CA2006597A1 (en) * | 1988-12-26 | 1990-06-26 | Kazuo Kogure | Method for manufacturing compound semiconductor devices and a compound semiconductor device |
| US5359619A (en) * | 1992-02-20 | 1994-10-25 | Sumitomo Electric Industries, Ltd. | Multi-beam semiconductor laser and method for producing the same |
| JP4189610B2 (ja) * | 1998-05-08 | 2008-12-03 | ソニー株式会社 | 光電変換素子およびその製造方法 |
-
1972
- 1972-03-13 JP JP2564472A patent/JPS5321275B2/ja not_active Expired
-
1973
- 1973-03-12 DE DE2312162A patent/DE2312162C3/de not_active Expired
- 1973-03-12 NL NL7303449.A patent/NL159536B/xx not_active IP Right Cessation
- 1973-03-12 GB GB1184073A patent/GB1419695A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2312162B2 (de) | 1977-07-14 |
| NL159536B (nl) | 1979-02-15 |
| DE2312162C3 (de) | 1978-03-09 |
| JPS5321275B2 (enExample) | 1978-07-01 |
| JPS4894378A (enExample) | 1973-12-05 |
| DE2312162A1 (de) | 1973-10-04 |
| GB1419695A (enExample) | 1975-12-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee | ||
| NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: HITACHI |