JPS5217780A - Pressure convertor with semi-conductor elements - Google Patents
Pressure convertor with semi-conductor elementsInfo
- Publication number
- JPS5217780A JPS5217780A JP50081778A JP8177875A JPS5217780A JP S5217780 A JPS5217780 A JP S5217780A JP 50081778 A JP50081778 A JP 50081778A JP 8177875 A JP8177875 A JP 8177875A JP S5217780 A JPS5217780 A JP S5217780A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- conductor elements
- pressure convertor
- pressure
- convertor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50081778A JPS5217780A (en) | 1975-07-04 | 1975-07-04 | Pressure convertor with semi-conductor elements |
| BR7604069A BR7604069A (pt) | 1975-07-04 | 1976-06-23 | Transdutor de pressao de semicondutor |
| GB27130/76A GB1547592A (en) | 1975-07-04 | 1976-06-30 | Semiconductor pressure transducers |
| US05/701,531 US4065971A (en) | 1975-07-04 | 1976-07-01 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50081778A JPS5217780A (en) | 1975-07-04 | 1975-07-04 | Pressure convertor with semi-conductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5217780A true JPS5217780A (en) | 1977-02-09 |
| JPS551715B2 JPS551715B2 (OSRAM) | 1980-01-16 |
Family
ID=13755926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50081778A Granted JPS5217780A (en) | 1975-07-04 | 1975-07-04 | Pressure convertor with semi-conductor elements |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4065971A (OSRAM) |
| JP (1) | JPS5217780A (OSRAM) |
| BR (1) | BR7604069A (OSRAM) |
| GB (1) | GB1547592A (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54149486A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Pressure-sensitive element |
| JPS60258972A (ja) * | 1984-06-05 | 1985-12-20 | Fujikura Ltd | 半導体圧力センサの温度補償方法 |
| JP2017500545A (ja) * | 2013-12-11 | 2017-01-05 | メレクシス・テクノロジーズ・ナムローゼフェンノートシャップ | 半導体圧力センサ |
| US10317297B2 (en) | 2013-12-11 | 2019-06-11 | Melexis Technologies Nv | Semiconductor pressure sensor |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54113379A (en) * | 1978-02-23 | 1979-09-04 | Nec Corp | Pressure gauge |
| DE2841312C2 (de) * | 1978-09-22 | 1985-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung |
| JPS5550668A (en) * | 1978-10-06 | 1980-04-12 | Hitachi Ltd | Semiconductor pressure converter |
| DE3277937D1 (en) * | 1982-12-01 | 1988-02-11 | Honeywell Inc | Semiconductor pressure transducer |
| US4527428A (en) * | 1982-12-30 | 1985-07-09 | Hitachi, Ltd. | Semiconductor pressure transducer |
| US4658279A (en) * | 1983-09-08 | 1987-04-14 | Wisconsin Alumini Research Foundation | Velocity saturated strain sensitive semiconductor devices |
| US4713680A (en) * | 1986-06-30 | 1987-12-15 | Motorola, Inc. | Series resistive network |
| US5812047A (en) * | 1997-02-18 | 1998-09-22 | Exar Corporation | Offset-free resistor geometry for use in piezo-resistive pressure sensor |
| US6247364B1 (en) * | 1997-10-27 | 2001-06-19 | Thomas P. Kicher & Co. | Acceleration transducer and method |
| US6142021A (en) * | 1998-08-21 | 2000-11-07 | Motorola, Inc. | Selectable pressure sensor |
| US6318183B1 (en) * | 1998-12-22 | 2001-11-20 | Motorola, Inc. | Multiple element pressure sensor having a selectively pressure sensor range |
| US6341528B1 (en) | 1999-11-12 | 2002-01-29 | Measurement Specialties, Incorporated | Strain sensing structure with improved reliability |
| WO2002061383A1 (en) * | 2001-01-31 | 2002-08-08 | Silicon Valley Sensors, Inc. | Triangular chip strain sensing structure and corner,edge on a diaphragm |
| EP3032235B1 (en) * | 2014-12-10 | 2017-09-20 | Melexis Technologies NV | Semiconductor pressure sensor |
| EP3211394B1 (en) | 2016-02-29 | 2021-03-31 | Melexis Technologies NV | Semiconductor pressure sensor for harsh media application |
| EP3260833B1 (en) | 2016-06-21 | 2021-10-27 | Melexis Technologies NV | Semiconductor sensor assembly for harsh media application |
| US10260981B2 (en) * | 2017-02-06 | 2019-04-16 | Nxp Usa, Inc. | Pressure sensor having sense elements in multiple wheatstone bridges with chained outputs |
| EP3358309B1 (en) | 2017-02-06 | 2019-04-24 | Melexis Technologies SA | Method and circuit for biasing and readout of resistive sensor structure |
| US11650110B2 (en) * | 2020-11-04 | 2023-05-16 | Honeywell International Inc. | Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3456226A (en) * | 1967-10-27 | 1969-07-15 | Conrac Corp | Strain gage configuration |
| US3513430A (en) * | 1968-06-19 | 1970-05-19 | Tyco Laboratories Inc | Semiconductor strain gage transducer and method of making same |
| US3537319A (en) * | 1968-07-26 | 1970-11-03 | Gen Electric | Silicon diaphragm with optimized integral strain gages |
| US3772628A (en) * | 1972-05-30 | 1973-11-13 | Gen Electric | Integral silicon diaphragms for low pressure measurements |
-
1975
- 1975-07-04 JP JP50081778A patent/JPS5217780A/ja active Granted
-
1976
- 1976-06-23 BR BR7604069A patent/BR7604069A/pt unknown
- 1976-06-30 GB GB27130/76A patent/GB1547592A/en not_active Expired
- 1976-07-01 US US05/701,531 patent/US4065971A/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| IEEE TAANSACTION ON BIOMEDICAL ENGINEERING=1973 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54149486A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Pressure-sensitive element |
| JPS60258972A (ja) * | 1984-06-05 | 1985-12-20 | Fujikura Ltd | 半導体圧力センサの温度補償方法 |
| JP2017500545A (ja) * | 2013-12-11 | 2017-01-05 | メレクシス・テクノロジーズ・ナムローゼフェンノートシャップ | 半導体圧力センサ |
| US10317297B2 (en) | 2013-12-11 | 2019-06-11 | Melexis Technologies Nv | Semiconductor pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| US4065971A (en) | 1978-01-03 |
| JPS551715B2 (OSRAM) | 1980-01-16 |
| BR7604069A (pt) | 1977-07-05 |
| GB1547592A (en) | 1979-06-20 |
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