JPS551715B2 - - Google Patents

Info

Publication number
JPS551715B2
JPS551715B2 JP8177875A JP8177875A JPS551715B2 JP S551715 B2 JPS551715 B2 JP S551715B2 JP 8177875 A JP8177875 A JP 8177875A JP 8177875 A JP8177875 A JP 8177875A JP S551715 B2 JPS551715 B2 JP S551715B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8177875A
Other languages
Japanese (ja)
Other versions
JPS5217780A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50081778A priority Critical patent/JPS5217780A/ja
Priority to BR7604069A priority patent/BR7604069A/pt
Priority to GB27130/76A priority patent/GB1547592A/en
Priority to US05/701,531 priority patent/US4065971A/en
Publication of JPS5217780A publication Critical patent/JPS5217780A/ja
Publication of JPS551715B2 publication Critical patent/JPS551715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
JP50081778A 1975-07-04 1975-07-04 Pressure convertor with semi-conductor elements Granted JPS5217780A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50081778A JPS5217780A (en) 1975-07-04 1975-07-04 Pressure convertor with semi-conductor elements
BR7604069A BR7604069A (pt) 1975-07-04 1976-06-23 Transdutor de pressao de semicondutor
GB27130/76A GB1547592A (en) 1975-07-04 1976-06-30 Semiconductor pressure transducers
US05/701,531 US4065971A (en) 1975-07-04 1976-07-01 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50081778A JPS5217780A (en) 1975-07-04 1975-07-04 Pressure convertor with semi-conductor elements

Publications (2)

Publication Number Publication Date
JPS5217780A JPS5217780A (en) 1977-02-09
JPS551715B2 true JPS551715B2 (OSRAM) 1980-01-16

Family

ID=13755926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50081778A Granted JPS5217780A (en) 1975-07-04 1975-07-04 Pressure convertor with semi-conductor elements

Country Status (4)

Country Link
US (1) US4065971A (OSRAM)
JP (1) JPS5217780A (OSRAM)
BR (1) BR7604069A (OSRAM)
GB (1) GB1547592A (OSRAM)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54113379A (en) * 1978-02-23 1979-09-04 Nec Corp Pressure gauge
JPS54149486A (en) * 1978-05-16 1979-11-22 Toshiba Corp Pressure-sensitive element
DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
JPS5550668A (en) * 1978-10-06 1980-04-12 Hitachi Ltd Semiconductor pressure converter
DE3277937D1 (en) * 1982-12-01 1988-02-11 Honeywell Inc Semiconductor pressure transducer
US4527428A (en) * 1982-12-30 1985-07-09 Hitachi, Ltd. Semiconductor pressure transducer
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
JPS60258972A (ja) * 1984-06-05 1985-12-20 Fujikura Ltd 半導体圧力センサの温度補償方法
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
US5812047A (en) * 1997-02-18 1998-09-22 Exar Corporation Offset-free resistor geometry for use in piezo-resistive pressure sensor
US6247364B1 (en) * 1997-10-27 2001-06-19 Thomas P. Kicher & Co. Acceleration transducer and method
US6142021A (en) * 1998-08-21 2000-11-07 Motorola, Inc. Selectable pressure sensor
US6318183B1 (en) * 1998-12-22 2001-11-20 Motorola, Inc. Multiple element pressure sensor having a selectively pressure sensor range
US6341528B1 (en) 1999-11-12 2002-01-29 Measurement Specialties, Incorporated Strain sensing structure with improved reliability
WO2002061383A1 (en) * 2001-01-31 2002-08-08 Silicon Valley Sensors, Inc. Triangular chip strain sensing structure and corner,edge on a diaphragm
GB2521163A (en) * 2013-12-11 2015-06-17 Melexis Technologies Nv Semiconductor pressure sensor
US10317297B2 (en) 2013-12-11 2019-06-11 Melexis Technologies Nv Semiconductor pressure sensor
EP3032235B1 (en) * 2014-12-10 2017-09-20 Melexis Technologies NV Semiconductor pressure sensor
EP3211394B1 (en) 2016-02-29 2021-03-31 Melexis Technologies NV Semiconductor pressure sensor for harsh media application
EP3260833B1 (en) 2016-06-21 2021-10-27 Melexis Technologies NV Semiconductor sensor assembly for harsh media application
US10260981B2 (en) * 2017-02-06 2019-04-16 Nxp Usa, Inc. Pressure sensor having sense elements in multiple wheatstone bridges with chained outputs
EP3358309B1 (en) 2017-02-06 2019-04-24 Melexis Technologies SA Method and circuit for biasing and readout of resistive sensor structure
US11650110B2 (en) * 2020-11-04 2023-05-16 Honeywell International Inc. Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3456226A (en) * 1967-10-27 1969-07-15 Conrac Corp Strain gage configuration
US3513430A (en) * 1968-06-19 1970-05-19 Tyco Laboratories Inc Semiconductor strain gage transducer and method of making same
US3537319A (en) * 1968-07-26 1970-11-03 Gen Electric Silicon diaphragm with optimized integral strain gages
US3772628A (en) * 1972-05-30 1973-11-13 Gen Electric Integral silicon diaphragms for low pressure measurements

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TAANSACTION ON BIOMEDICAL ENGINEERING=1973 *

Also Published As

Publication number Publication date
US4065971A (en) 1978-01-03
JPS5217780A (en) 1977-02-09
BR7604069A (pt) 1977-07-05
GB1547592A (en) 1979-06-20

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