JPS52137279A - Semiconductor device for optical coupling - Google Patents

Semiconductor device for optical coupling

Info

Publication number
JPS52137279A
JPS52137279A JP5392176A JP5392176A JPS52137279A JP S52137279 A JPS52137279 A JP S52137279A JP 5392176 A JP5392176 A JP 5392176A JP 5392176 A JP5392176 A JP 5392176A JP S52137279 A JPS52137279 A JP S52137279A
Authority
JP
Japan
Prior art keywords
optical coupling
semiconductor device
utilizing
electrode
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5392176A
Other languages
English (en)
Other versions
JPS5548463B2 (ja
Inventor
Yoshitaka Sugawara
Tatsuya Kamei
Susumu Murakami
Tadahiko Mitsuyoshi
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5392176A priority Critical patent/JPS52137279A/ja
Priority to US05/792,002 priority patent/US4136351A/en
Priority to DE2721250A priority patent/DE2721250C2/de
Publication of JPS52137279A publication Critical patent/JPS52137279A/ja
Publication of JPS5548463B2 publication Critical patent/JPS5548463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP5392176A 1976-05-12 1976-05-12 Semiconductor device for optical coupling Granted JPS52137279A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5392176A JPS52137279A (en) 1976-05-12 1976-05-12 Semiconductor device for optical coupling
US05/792,002 US4136351A (en) 1976-05-12 1977-04-28 Photo-coupled semiconductor device
DE2721250A DE2721250C2 (de) 1976-05-12 1977-05-11 Optokoppler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5392176A JPS52137279A (en) 1976-05-12 1976-05-12 Semiconductor device for optical coupling

Publications (2)

Publication Number Publication Date
JPS52137279A true JPS52137279A (en) 1977-11-16
JPS5548463B2 JPS5548463B2 (ja) 1980-12-05

Family

ID=12956170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5392176A Granted JPS52137279A (en) 1976-05-12 1976-05-12 Semiconductor device for optical coupling

Country Status (3)

Country Link
US (1) US4136351A (ja)
JP (1) JPS52137279A (ja)
DE (1) DE2721250C2 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143385A (en) * 1976-09-30 1979-03-06 Hitachi, Ltd. Photocoupler
JPS53147968A (en) * 1977-05-30 1978-12-23 Hitachi Ltd Thick film circuit board
FR2440563A1 (fr) * 1978-11-02 1980-05-30 Labo Electronique Physique Dispositif de liaison entre fibres optiques et/ou dispositifs electro-optiques, et procede pour assurer leur positionnement optimal
JPS5582475A (en) * 1978-12-19 1980-06-21 Toshiba Corp Photo-coupling semiconductor device
US4709253A (en) * 1986-05-02 1987-11-24 Amp Incorporated Surface mountable diode
US4755474A (en) * 1986-12-22 1988-07-05 Motorola Inc. Method of assembling an optocoupler
US4843036A (en) * 1987-06-29 1989-06-27 Eastman Kodak Company Method for encapsulating electronic devices
JPH0376286A (ja) * 1989-08-18 1991-04-02 Sony Corp 半導体レーザ装置とその組立方法
US5245198A (en) * 1990-10-12 1993-09-14 Sharp Kabushiki Kaisha Optoelectronic device, metal mold for manufacturing the device and manufacturing method of the device using the metal mold
JP3337405B2 (ja) * 1996-12-27 2002-10-21 シャープ株式会社 発光表示素子およびその電気配線基板への接続方法ならびに製造方法
GB2344455A (en) * 1998-12-01 2000-06-07 Mitel Semiconductor Ab Semiconductor device with low parasitic capacitance
JP2010512029A (ja) * 2006-12-05 2010-04-15 ナノ テラ インコーポレイテッド 端面放射型発光ダイオードアレイならびに端面放射型発光ダイオードアレイの作製および使用方法
JP5262533B2 (ja) * 2008-09-30 2013-08-14 豊田合成株式会社 半導体装置の製造方法
DE102016122810A1 (de) 2016-11-25 2018-05-30 Osram Opto Semiconductors Gmbh Bauteil mit einem lichtemittierenden halbleiterchip

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1007876A (en) * 1963-08-15 1965-10-22 Mullard Ltd Improvements in and relating to opto-electronic semiconductor devices
FR1413301A (fr) * 1963-10-17 1965-10-08 Ibm Appareil de commutation et de multiplexage de circuits électriques
US3436548A (en) * 1964-06-29 1969-04-01 Texas Instruments Inc Combination p-n junction light emitter and photocell having electrostatic shielding
GB1118826A (en) * 1964-06-29 1968-07-03 Texas Instruments Inc Optoelectric systems
DE1812199C3 (de) * 1968-12-02 1980-07-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung
JPS4834686A (ja) * 1971-09-09 1973-05-21
JPS5642148B2 (ja) * 1975-01-24 1981-10-02
US4047045A (en) * 1975-03-03 1977-09-06 Paxton Jr Grady W Optical coupler
JPS584470B2 (ja) * 1975-04-02 1983-01-26 株式会社日立製作所 ヒカリケツゴウハンドウタイソウチ オヨビ ソノセイホウ
US4032962A (en) * 1975-12-29 1977-06-28 Ibm Corporation High density semiconductor integrated circuit layout

Also Published As

Publication number Publication date
DE2721250A1 (de) 1977-11-17
DE2721250C2 (de) 1983-01-20
JPS5548463B2 (ja) 1980-12-05
US4136351A (en) 1979-01-23

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