JPS5548463B2 - - Google Patents
Info
- Publication number
- JPS5548463B2 JPS5548463B2 JP5392176A JP5392176A JPS5548463B2 JP S5548463 B2 JPS5548463 B2 JP S5548463B2 JP 5392176 A JP5392176 A JP 5392176A JP 5392176 A JP5392176 A JP 5392176A JP S5548463 B2 JPS5548463 B2 JP S5548463B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5392176A JPS52137279A (en) | 1976-05-12 | 1976-05-12 | Semiconductor device for optical coupling |
US05/792,002 US4136351A (en) | 1976-05-12 | 1977-04-28 | Photo-coupled semiconductor device |
DE2721250A DE2721250C2 (de) | 1976-05-12 | 1977-05-11 | Optokoppler |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5392176A JPS52137279A (en) | 1976-05-12 | 1976-05-12 | Semiconductor device for optical coupling |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52137279A JPS52137279A (en) | 1977-11-16 |
JPS5548463B2 true JPS5548463B2 (ja) | 1980-12-05 |
Family
ID=12956170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5392176A Granted JPS52137279A (en) | 1976-05-12 | 1976-05-12 | Semiconductor device for optical coupling |
Country Status (3)
Country | Link |
---|---|
US (1) | US4136351A (ja) |
JP (1) | JPS52137279A (ja) |
DE (1) | DE2721250C2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4143385A (en) * | 1976-09-30 | 1979-03-06 | Hitachi, Ltd. | Photocoupler |
JPS53147968A (en) * | 1977-05-30 | 1978-12-23 | Hitachi Ltd | Thick film circuit board |
FR2440563A1 (fr) * | 1978-11-02 | 1980-05-30 | Labo Electronique Physique | Dispositif de liaison entre fibres optiques et/ou dispositifs electro-optiques, et procede pour assurer leur positionnement optimal |
JPS5582475A (en) * | 1978-12-19 | 1980-06-21 | Toshiba Corp | Photo-coupling semiconductor device |
US4709253A (en) * | 1986-05-02 | 1987-11-24 | Amp Incorporated | Surface mountable diode |
US4755474A (en) * | 1986-12-22 | 1988-07-05 | Motorola Inc. | Method of assembling an optocoupler |
US4843036A (en) * | 1987-06-29 | 1989-06-27 | Eastman Kodak Company | Method for encapsulating electronic devices |
JPH0376286A (ja) * | 1989-08-18 | 1991-04-02 | Sony Corp | 半導体レーザ装置とその組立方法 |
US5245198A (en) * | 1990-10-12 | 1993-09-14 | Sharp Kabushiki Kaisha | Optoelectronic device, metal mold for manufacturing the device and manufacturing method of the device using the metal mold |
JP3337405B2 (ja) * | 1996-12-27 | 2002-10-21 | シャープ株式会社 | 発光表示素子およびその電気配線基板への接続方法ならびに製造方法 |
GB2344455A (en) | 1998-12-01 | 2000-06-07 | Mitel Semiconductor Ab | Semiconductor device with low parasitic capacitance |
EP2092577A2 (en) * | 2006-12-05 | 2009-08-26 | Nano Terra Inc. | Edge-emitting light-emitting diode arrays and methods of making and using the same |
JP5262533B2 (ja) * | 2008-09-30 | 2013-08-14 | 豊田合成株式会社 | 半導体装置の製造方法 |
DE102016122810A1 (de) | 2016-11-25 | 2018-05-30 | Osram Opto Semiconductors Gmbh | Bauteil mit einem lichtemittierenden halbleiterchip |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1007876A (en) * | 1963-08-15 | 1965-10-22 | Mullard Ltd | Improvements in and relating to opto-electronic semiconductor devices |
FR1413301A (fr) * | 1963-10-17 | 1965-10-08 | Ibm | Appareil de commutation et de multiplexage de circuits électriques |
US3436548A (en) * | 1964-06-29 | 1969-04-01 | Texas Instruments Inc | Combination p-n junction light emitter and photocell having electrostatic shielding |
GB1118826A (en) * | 1964-06-29 | 1968-07-03 | Texas Instruments Inc | Optoelectric systems |
DE1812199C3 (de) * | 1968-12-02 | 1980-07-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung |
JPS4834686A (ja) * | 1971-09-09 | 1973-05-21 | ||
JPS5642148B2 (ja) * | 1975-01-24 | 1981-10-02 | ||
US4047045A (en) * | 1975-03-03 | 1977-09-06 | Paxton Jr Grady W | Optical coupler |
JPS584470B2 (ja) * | 1975-04-02 | 1983-01-26 | 株式会社日立製作所 | ヒカリケツゴウハンドウタイソウチ オヨビ ソノセイホウ |
US4032962A (en) * | 1975-12-29 | 1977-06-28 | Ibm Corporation | High density semiconductor integrated circuit layout |
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1976
- 1976-05-12 JP JP5392176A patent/JPS52137279A/ja active Granted
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1977
- 1977-04-28 US US05/792,002 patent/US4136351A/en not_active Expired - Lifetime
- 1977-05-11 DE DE2721250A patent/DE2721250C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS52137279A (en) | 1977-11-16 |
US4136351A (en) | 1979-01-23 |
DE2721250C2 (de) | 1983-01-20 |
DE2721250A1 (de) | 1977-11-17 |