JPS52115663A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52115663A JPS52115663A JP3193276A JP3193276A JPS52115663A JP S52115663 A JPS52115663 A JP S52115663A JP 3193276 A JP3193276 A JP 3193276A JP 3193276 A JP3193276 A JP 3193276A JP S52115663 A JPS52115663 A JP S52115663A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- channel regions
- providing
- insulating film
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3193276A JPS52115663A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
US05/955,879 US4243997A (en) | 1976-03-25 | 1978-10-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3193276A JPS52115663A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52115663A true JPS52115663A (en) | 1977-09-28 |
JPS6123669B2 JPS6123669B2 (fr) | 1986-06-06 |
Family
ID=12344733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3193276A Granted JPS52115663A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52115663A (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5491069A (en) * | 1977-12-28 | 1979-07-19 | Nec Corp | Mos field effect transistor |
JPS54111444U (fr) * | 1978-01-24 | 1979-08-06 | ||
JPS5499573A (en) * | 1978-01-24 | 1979-08-06 | Pioneer Electronic Corp | Field effect transistor |
JPS54113858U (fr) * | 1978-01-24 | 1979-08-10 | ||
JPS61104671A (ja) * | 1984-10-29 | 1986-05-22 | Sharp Corp | 電界効果トランジスタ |
US5371024A (en) * | 1988-09-30 | 1994-12-06 | Kabushiki Kaisha Toshiba | Semiconductor device and process for manufacturing the same |
WO2008093824A1 (fr) * | 2007-02-01 | 2008-08-07 | Rohm Co., Ltd. | Élément semi-conducteur gan |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4973982A (fr) * | 1972-11-16 | 1974-07-17 | ||
JPS508483A (fr) * | 1973-05-21 | 1975-01-28 |
-
1976
- 1976-03-25 JP JP3193276A patent/JPS52115663A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4973982A (fr) * | 1972-11-16 | 1974-07-17 | ||
JPS508483A (fr) * | 1973-05-21 | 1975-01-28 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5491069A (en) * | 1977-12-28 | 1979-07-19 | Nec Corp | Mos field effect transistor |
JPS54111444U (fr) * | 1978-01-24 | 1979-08-06 | ||
JPS5499573A (en) * | 1978-01-24 | 1979-08-06 | Pioneer Electronic Corp | Field effect transistor |
JPS54113858U (fr) * | 1978-01-24 | 1979-08-10 | ||
JPS61104671A (ja) * | 1984-10-29 | 1986-05-22 | Sharp Corp | 電界効果トランジスタ |
US5371024A (en) * | 1988-09-30 | 1994-12-06 | Kabushiki Kaisha Toshiba | Semiconductor device and process for manufacturing the same |
WO2008093824A1 (fr) * | 2007-02-01 | 2008-08-07 | Rohm Co., Ltd. | Élément semi-conducteur gan |
Also Published As
Publication number | Publication date |
---|---|
JPS6123669B2 (fr) | 1986-06-06 |
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