JPS4973982A - - Google Patents
Info
- Publication number
- JPS4973982A JPS4973982A JP47115147A JP11514772A JPS4973982A JP S4973982 A JPS4973982 A JP S4973982A JP 47115147 A JP47115147 A JP 47115147A JP 11514772 A JP11514772 A JP 11514772A JP S4973982 A JPS4973982 A JP S4973982A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47115147A JPS4973982A (fr) | 1972-11-16 | 1972-11-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47115147A JPS4973982A (fr) | 1972-11-16 | 1972-11-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4973982A true JPS4973982A (fr) | 1974-07-17 |
Family
ID=14655455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47115147A Pending JPS4973982A (fr) | 1972-11-16 | 1972-11-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4973982A (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4997575A (fr) * | 1973-01-19 | 1974-09-14 | ||
JPS5263074A (en) * | 1975-11-14 | 1977-05-25 | Agency Of Ind Science & Technol | Insulated gate type field effect transistor and its production |
JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
JPS5366382A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Mos type field effect transistor |
JPH03241872A (ja) * | 1990-02-20 | 1991-10-29 | Rohm Co Ltd | Mos―fet製造方法 |
WO2007119441A1 (fr) * | 2006-04-06 | 2007-10-25 | Sharp Kabushiki Kaisha | Circuit intégré de puissance et son procédé de fabrication |
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1972
- 1972-11-16 JP JP47115147A patent/JPS4973982A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4997575A (fr) * | 1973-01-19 | 1974-09-14 | ||
JPS567305B2 (fr) * | 1973-01-19 | 1981-02-17 | ||
JPS5263074A (en) * | 1975-11-14 | 1977-05-25 | Agency Of Ind Science & Technol | Insulated gate type field effect transistor and its production |
JPS5734670B2 (fr) * | 1975-11-14 | 1982-07-24 | ||
JPS52115663A (en) * | 1976-03-25 | 1977-09-28 | Toshiba Corp | Semiconductor device |
JPS6123669B2 (fr) * | 1976-03-25 | 1986-06-06 | Tokyo Shibaura Electric Co | |
JPS5366382A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Mos type field effect transistor |
JPH03241872A (ja) * | 1990-02-20 | 1991-10-29 | Rohm Co Ltd | Mos―fet製造方法 |
WO2007119441A1 (fr) * | 2006-04-06 | 2007-10-25 | Sharp Kabushiki Kaisha | Circuit intégré de puissance et son procédé de fabrication |
US8299525B2 (en) | 2006-04-06 | 2012-10-30 | Sharp Kabushiki Kaisha | Power IC device and method for manufacturing same |