JPS4973982A - - Google Patents

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Publication number
JPS4973982A
JPS4973982A JP47115147A JP11514772A JPS4973982A JP S4973982 A JPS4973982 A JP S4973982A JP 47115147 A JP47115147 A JP 47115147A JP 11514772 A JP11514772 A JP 11514772A JP S4973982 A JPS4973982 A JP S4973982A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47115147A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47115147A priority Critical patent/JPS4973982A/ja
Publication of JPS4973982A publication Critical patent/JPS4973982A/ja
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP47115147A 1972-11-16 1972-11-16 Pending JPS4973982A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP47115147A JPS4973982A (fr) 1972-11-16 1972-11-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47115147A JPS4973982A (fr) 1972-11-16 1972-11-16

Publications (1)

Publication Number Publication Date
JPS4973982A true JPS4973982A (fr) 1974-07-17

Family

ID=14655455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47115147A Pending JPS4973982A (fr) 1972-11-16 1972-11-16

Country Status (1)

Country Link
JP (1) JPS4973982A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4997575A (fr) * 1973-01-19 1974-09-14
JPS5263074A (en) * 1975-11-14 1977-05-25 Agency Of Ind Science & Technol Insulated gate type field effect transistor and its production
JPS52115663A (en) * 1976-03-25 1977-09-28 Toshiba Corp Semiconductor device
JPS5366382A (en) * 1976-11-26 1978-06-13 Toshiba Corp Mos type field effect transistor
JPH03241872A (ja) * 1990-02-20 1991-10-29 Rohm Co Ltd Mos―fet製造方法
WO2007119441A1 (fr) * 2006-04-06 2007-10-25 Sharp Kabushiki Kaisha Circuit intégré de puissance et son procédé de fabrication

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4997575A (fr) * 1973-01-19 1974-09-14
JPS567305B2 (fr) * 1973-01-19 1981-02-17
JPS5263074A (en) * 1975-11-14 1977-05-25 Agency Of Ind Science & Technol Insulated gate type field effect transistor and its production
JPS5734670B2 (fr) * 1975-11-14 1982-07-24
JPS52115663A (en) * 1976-03-25 1977-09-28 Toshiba Corp Semiconductor device
JPS6123669B2 (fr) * 1976-03-25 1986-06-06 Tokyo Shibaura Electric Co
JPS5366382A (en) * 1976-11-26 1978-06-13 Toshiba Corp Mos type field effect transistor
JPH03241872A (ja) * 1990-02-20 1991-10-29 Rohm Co Ltd Mos―fet製造方法
WO2007119441A1 (fr) * 2006-04-06 2007-10-25 Sharp Kabushiki Kaisha Circuit intégré de puissance et son procédé de fabrication
US8299525B2 (en) 2006-04-06 2012-10-30 Sharp Kabushiki Kaisha Power IC device and method for manufacturing same

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