JPS5122379A - - Google Patents

Info

Publication number
JPS5122379A
JPS5122379A JP49094820A JP9482074A JPS5122379A JP S5122379 A JPS5122379 A JP S5122379A JP 49094820 A JP49094820 A JP 49094820A JP 9482074 A JP9482074 A JP 9482074A JP S5122379 A JPS5122379 A JP S5122379A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49094820A
Other languages
Japanese (ja)
Other versions
JPS573225B2 (en, 2012
Inventor
Takashi Shimada
Shinichi Saiki
Akio Kashiwanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9482074A priority Critical patent/JPS573225B2/ja
Priority to CA233,136A priority patent/CA1037160A/en
Priority to GB33404/75A priority patent/GB1520921A/en
Priority to US05/604,093 priority patent/US4024564A/en
Priority to DE19752536277 priority patent/DE2536277A1/de
Priority to FR7525698A priority patent/FR2282723A1/fr
Priority to NL7509859A priority patent/NL7509859A/xx
Publication of JPS5122379A publication Critical patent/JPS5122379A/ja
Publication of JPS573225B2 publication Critical patent/JPS573225B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP9482074A 1974-08-19 1974-08-19 Expired JPS573225B2 (en, 2012)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9482074A JPS573225B2 (en, 2012) 1974-08-19 1974-08-19
CA233,136A CA1037160A (en) 1974-08-19 1975-08-08 Semiconductor device having at least one pn junction and channel stopper surrounded by a protective conducting layer
GB33404/75A GB1520921A (en) 1974-08-19 1975-08-11 Semiconductor devices
US05/604,093 US4024564A (en) 1974-08-19 1975-08-13 Semiconductor device having at least one PN junction and channel stopper surrounder by a protecture conducting layer
DE19752536277 DE2536277A1 (de) 1974-08-19 1975-08-14 Halbleiteranordnung
FR7525698A FR2282723A1 (fr) 1974-08-19 1975-08-19 Composant semi-conducteur a jonction recouverte d'une couche de passivation
NL7509859A NL7509859A (nl) 1974-08-19 1975-08-19 Halfgeleiderinrichting.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9482074A JPS573225B2 (en, 2012) 1974-08-19 1974-08-19

Publications (2)

Publication Number Publication Date
JPS5122379A true JPS5122379A (en, 2012) 1976-02-23
JPS573225B2 JPS573225B2 (en, 2012) 1982-01-20

Family

ID=14120681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9482074A Expired JPS573225B2 (en, 2012) 1974-08-19 1974-08-19

Country Status (7)

Country Link
US (1) US4024564A (en, 2012)
JP (1) JPS573225B2 (en, 2012)
CA (1) CA1037160A (en, 2012)
DE (1) DE2536277A1 (en, 2012)
FR (1) FR2282723A1 (en, 2012)
GB (1) GB1520921A (en, 2012)
NL (1) NL7509859A (en, 2012)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553455A (en) * 1978-10-11 1980-04-18 Bbc Brown Boveri & Cie Semiconductor circuit element having at least one planar pn junction and region protective ring
JPS5779665A (en) * 1980-11-05 1982-05-18 Toshiba Corp Semiconductor controlled rectifier element
JPS58111369A (ja) * 1981-12-24 1983-07-02 Nippon Denso Co Ltd 半導体装置
JPS58134467A (ja) * 1982-02-05 1983-08-10 Nippon Denso Co Ltd 半導体装置
JPS5963766A (ja) * 1982-10-04 1984-04-11 Mitsubishi Electric Corp 半導体メモリ装置
JPS63194366A (ja) * 1987-02-09 1988-08-11 Toshiba Corp 高耐圧プレ−ナ型半導体素子
JPS63207178A (ja) * 1987-02-23 1988-08-26 Nec Corp プレ−ナ型高耐圧サイリスタ
US5596217A (en) * 1981-12-24 1997-01-21 Nippondenso Co., Ltd. Semiconductor device including overvoltage protection diode

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3117804A1 (de) * 1981-05-06 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3141203A1 (de) * 1981-10-16 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Planares halbleiterbauelement
DE3142616A1 (de) * 1981-10-28 1983-05-05 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
JPS58223345A (ja) * 1982-06-21 1983-12-24 Toshiba Corp 半導体装置
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
US4824797A (en) * 1985-10-31 1989-04-25 International Business Machines Corporation Self-aligned channel stop
JPH02260538A (ja) * 1989-03-31 1990-10-23 Fujitsu Ltd 半導体装置
JPH03280071A (ja) * 1990-03-29 1991-12-11 Konica Corp 印刷版の形成方法
JPH06204236A (ja) * 1992-12-28 1994-07-22 Canon Inc 半導体装置、半導体製造装置、集積回路、半導体装置の製造方法および半導体製造方法
DE10217935B4 (de) * 2001-04-23 2007-06-28 Fuji Electric Co., Ltd., Kawasaki Halbleiterbauteil
JP2003069045A (ja) * 2001-08-22 2003-03-07 Mitsubishi Electric Corp 半導体装置
US20070215873A1 (en) * 2004-10-12 2007-09-20 Guy Silver Near natural breakdown device
US20080097069A1 (en) * 2006-10-20 2008-04-24 Hua Guo Poly(arylene ether) method and composition
US9653617B2 (en) 2015-05-27 2017-05-16 Sandisk Technologies Llc Multiple junction thin film transistor
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (en, 2012) * 1961-09-08
NL6715013A (en, 2012) * 1967-11-04 1969-05-06
NL6904619A (en, 2012) * 1969-03-25 1970-09-29
NL6904543A (en, 2012) * 1969-03-25 1970-09-29
GB1311748A (en) * 1969-06-21 1973-03-28 Licentia Gmbh Semiconductor device
NL161304C (nl) * 1969-07-01 1980-01-15 Philips Nv Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd.
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
US3684933A (en) * 1971-06-21 1972-08-15 Itt Semiconductor device showing at least three successive zones of alternate opposite conductivity type

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553455A (en) * 1978-10-11 1980-04-18 Bbc Brown Boveri & Cie Semiconductor circuit element having at least one planar pn junction and region protective ring
JPS5779665A (en) * 1980-11-05 1982-05-18 Toshiba Corp Semiconductor controlled rectifier element
JPS58111369A (ja) * 1981-12-24 1983-07-02 Nippon Denso Co Ltd 半導体装置
US5596217A (en) * 1981-12-24 1997-01-21 Nippondenso Co., Ltd. Semiconductor device including overvoltage protection diode
JPS58134467A (ja) * 1982-02-05 1983-08-10 Nippon Denso Co Ltd 半導体装置
JPS5963766A (ja) * 1982-10-04 1984-04-11 Mitsubishi Electric Corp 半導体メモリ装置
JPS63194366A (ja) * 1987-02-09 1988-08-11 Toshiba Corp 高耐圧プレ−ナ型半導体素子
JPS63207178A (ja) * 1987-02-23 1988-08-26 Nec Corp プレ−ナ型高耐圧サイリスタ

Also Published As

Publication number Publication date
FR2282723B1 (en, 2012) 1979-02-02
GB1520921A (en) 1978-08-09
CA1037160A (en) 1978-08-22
JPS573225B2 (en, 2012) 1982-01-20
NL7509859A (nl) 1976-02-23
FR2282723A1 (fr) 1976-03-19
US4024564A (en) 1977-05-17
DE2536277A1 (de) 1976-03-04

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