JPS51147253A - Structure of electrode terminal - Google Patents

Structure of electrode terminal

Info

Publication number
JPS51147253A
JPS51147253A JP50071748A JP7174875A JPS51147253A JP S51147253 A JPS51147253 A JP S51147253A JP 50071748 A JP50071748 A JP 50071748A JP 7174875 A JP7174875 A JP 7174875A JP S51147253 A JPS51147253 A JP S51147253A
Authority
JP
Japan
Prior art keywords
electrode terminal
semiconductor element
mechanical strength
connecting structure
high mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50071748A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5510135B2 (enExample
Inventor
Susumu Sato
Hideo Tsunemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50071748A priority Critical patent/JPS51147253A/ja
Priority to US05/694,358 priority patent/US4051508A/en
Publication of JPS51147253A publication Critical patent/JPS51147253A/ja
Publication of JPS5510135B2 publication Critical patent/JPS5510135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
JP50071748A 1975-06-13 1975-06-13 Structure of electrode terminal Granted JPS51147253A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50071748A JPS51147253A (en) 1975-06-13 1975-06-13 Structure of electrode terminal
US05/694,358 US4051508A (en) 1975-06-13 1976-06-09 Semiconductor device having multistepped bump terminal electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071748A JPS51147253A (en) 1975-06-13 1975-06-13 Structure of electrode terminal

Publications (2)

Publication Number Publication Date
JPS51147253A true JPS51147253A (en) 1976-12-17
JPS5510135B2 JPS5510135B2 (enExample) 1980-03-14

Family

ID=13469448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071748A Granted JPS51147253A (en) 1975-06-13 1975-06-13 Structure of electrode terminal

Country Status (2)

Country Link
US (1) US4051508A (enExample)
JP (1) JPS51147253A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198647A (en) * 1981-06-01 1982-12-06 Nec Corp Semiconductor device and manufacture therefor
JPS59211290A (ja) * 1983-05-16 1984-11-30 Mitsubishi Electric Corp 半導体装置
JPH02139934A (ja) * 1988-11-21 1990-05-29 Seiko Epson Corp 集積回路の製造方法
JP2009272383A (ja) * 2008-05-01 2009-11-19 Fujitsu Ltd 半導体装置及び基板の接合方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123074A (en) * 1977-04-01 1978-10-27 Nec Corp Semiconductor device
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
JPS5459080A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device
US4258382A (en) * 1978-07-03 1981-03-24 National Semiconductor Corporation Expanded pad structure
US4652336A (en) * 1984-09-20 1987-03-24 Siemens Aktiengesellschaft Method of producing copper platforms for integrated circuits
NL8600021A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht.
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
KR0145128B1 (ko) * 1995-04-24 1998-08-17 김광호 열방열 핀을 구비한 내부 리드 본딩 장치 및 이를 이용한 내부 리드 본딩 방법
JP3687610B2 (ja) * 2002-01-18 2005-08-24 セイコーエプソン株式会社 半導体装置、回路基板及び電子機器
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
US7394161B2 (en) 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US7109583B2 (en) * 2004-05-06 2006-09-19 Endwave Corporation Mounting with auxiliary bumps
US8022544B2 (en) 2004-07-09 2011-09-20 Megica Corporation Chip structure
US7452803B2 (en) * 2004-08-12 2008-11-18 Megica Corporation Method for fabricating chip structure
JP2006120677A (ja) * 2004-10-19 2006-05-11 Alps Electric Co Ltd 配線基板の接続端子構造
TWI330863B (en) * 2005-05-18 2010-09-21 Megica Corp Semiconductor chip with coil element over passivation layer
US7960269B2 (en) 2005-07-22 2011-06-14 Megica Corporation Method for forming a double embossing structure
TWI306673B (en) * 2005-08-31 2009-02-21 Chipmos Technologies Inc Method for bump manufacturing and chip package structure
US7947978B2 (en) * 2005-12-05 2011-05-24 Megica Corporation Semiconductor chip with bond area
US8421227B2 (en) * 2006-06-28 2013-04-16 Megica Corporation Semiconductor chip structure
US8193636B2 (en) * 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
US9984987B2 (en) 2016-08-05 2018-05-29 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1175667A (en) * 1966-04-07 1969-12-23 Associated Semiconductor Mft Improvements in the Electrodeposition of Metals using a Composite Mask
DE1614928A1 (de) * 1966-07-19 1970-12-23 Solitron Devices Verfahren zur Kontaktierung von Halbleiter-Bauelementen
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
US3617818A (en) * 1968-12-31 1971-11-02 Texas Instruments Inc Corrosion-resistent multimetal lead contact for semiconductor devices
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
US3765970A (en) * 1971-06-24 1973-10-16 Rca Corp Method of making beam leads for semiconductor devices
US3751292A (en) * 1971-08-20 1973-08-07 Motorola Inc Multilayer metallization system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198647A (en) * 1981-06-01 1982-12-06 Nec Corp Semiconductor device and manufacture therefor
JPS59211290A (ja) * 1983-05-16 1984-11-30 Mitsubishi Electric Corp 半導体装置
JPH02139934A (ja) * 1988-11-21 1990-05-29 Seiko Epson Corp 集積回路の製造方法
JP2009272383A (ja) * 2008-05-01 2009-11-19 Fujitsu Ltd 半導体装置及び基板の接合方法

Also Published As

Publication number Publication date
US4051508A (en) 1977-09-27
JPS5510135B2 (enExample) 1980-03-14

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