JPS5510135B2 - - Google Patents

Info

Publication number
JPS5510135B2
JPS5510135B2 JP7174875A JP7174875A JPS5510135B2 JP S5510135 B2 JPS5510135 B2 JP S5510135B2 JP 7174875 A JP7174875 A JP 7174875A JP 7174875 A JP7174875 A JP 7174875A JP S5510135 B2 JPS5510135 B2 JP S5510135B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7174875A
Other languages
Japanese (ja)
Other versions
JPS51147253A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50071748A priority Critical patent/JPS51147253A/ja
Priority to US05/694,358 priority patent/US4051508A/en
Publication of JPS51147253A publication Critical patent/JPS51147253A/ja
Publication of JPS5510135B2 publication Critical patent/JPS5510135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05169—Platinum [Pt] as principal constituent
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    • H01L2224/0554—External layer
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    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
JP50071748A 1975-06-13 1975-06-13 Structure of electrode terminal Granted JPS51147253A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50071748A JPS51147253A (en) 1975-06-13 1975-06-13 Structure of electrode terminal
US05/694,358 US4051508A (en) 1975-06-13 1976-06-09 Semiconductor device having multistepped bump terminal electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071748A JPS51147253A (en) 1975-06-13 1975-06-13 Structure of electrode terminal

Publications (2)

Publication Number Publication Date
JPS51147253A JPS51147253A (en) 1976-12-17
JPS5510135B2 true JPS5510135B2 (enExample) 1980-03-14

Family

ID=13469448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071748A Granted JPS51147253A (en) 1975-06-13 1975-06-13 Structure of electrode terminal

Country Status (2)

Country Link
US (1) US4051508A (enExample)
JP (1) JPS51147253A (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123074A (en) * 1977-04-01 1978-10-27 Nec Corp Semiconductor device
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
JPS5459080A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device
US4258382A (en) * 1978-07-03 1981-03-24 National Semiconductor Corporation Expanded pad structure
JPS57198647A (en) * 1981-06-01 1982-12-06 Nec Corp Semiconductor device and manufacture therefor
JPS59211290A (ja) * 1983-05-16 1984-11-30 Mitsubishi Electric Corp 半導体装置
US4652336A (en) * 1984-09-20 1987-03-24 Siemens Aktiengesellschaft Method of producing copper platforms for integrated circuits
NL8600021A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht.
JPH02139934A (ja) * 1988-11-21 1990-05-29 Seiko Epson Corp 集積回路の製造方法
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
KR0145128B1 (ko) * 1995-04-24 1998-08-17 김광호 열방열 핀을 구비한 내부 리드 본딩 장치 및 이를 이용한 내부 리드 본딩 방법
JP3687610B2 (ja) * 2002-01-18 2005-08-24 セイコーエプソン株式会社 半導体装置、回路基板及び電子機器
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
US7394161B2 (en) 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US7109583B2 (en) * 2004-05-06 2006-09-19 Endwave Corporation Mounting with auxiliary bumps
US8022544B2 (en) 2004-07-09 2011-09-20 Megica Corporation Chip structure
US7452803B2 (en) * 2004-08-12 2008-11-18 Megica Corporation Method for fabricating chip structure
JP2006120677A (ja) * 2004-10-19 2006-05-11 Alps Electric Co Ltd 配線基板の接続端子構造
TWI330863B (en) * 2005-05-18 2010-09-21 Megica Corp Semiconductor chip with coil element over passivation layer
US7960269B2 (en) 2005-07-22 2011-06-14 Megica Corporation Method for forming a double embossing structure
TWI306673B (en) * 2005-08-31 2009-02-21 Chipmos Technologies Inc Method for bump manufacturing and chip package structure
US7947978B2 (en) * 2005-12-05 2011-05-24 Megica Corporation Semiconductor chip with bond area
US8421227B2 (en) * 2006-06-28 2013-04-16 Megica Corporation Semiconductor chip structure
US8193636B2 (en) * 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
JP5262277B2 (ja) * 2008-05-01 2013-08-14 富士通株式会社 半導体装置及び基板の接合方法
US9984987B2 (en) 2016-08-05 2018-05-29 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1175667A (en) * 1966-04-07 1969-12-23 Associated Semiconductor Mft Improvements in the Electrodeposition of Metals using a Composite Mask
DE1614928A1 (de) * 1966-07-19 1970-12-23 Solitron Devices Verfahren zur Kontaktierung von Halbleiter-Bauelementen
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
US3617818A (en) * 1968-12-31 1971-11-02 Texas Instruments Inc Corrosion-resistent multimetal lead contact for semiconductor devices
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
US3765970A (en) * 1971-06-24 1973-10-16 Rca Corp Method of making beam leads for semiconductor devices
US3751292A (en) * 1971-08-20 1973-08-07 Motorola Inc Multilayer metallization system
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps

Also Published As

Publication number Publication date
US4051508A (en) 1977-09-27
JPS51147253A (en) 1976-12-17

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