JPS51111059A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS51111059A JPS51111059A JP3558775A JP3558775A JPS51111059A JP S51111059 A JPS51111059 A JP S51111059A JP 3558775 A JP3558775 A JP 3558775A JP 3558775 A JP3558775 A JP 3558775A JP S51111059 A JPS51111059 A JP S51111059A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- area
- heighten
- lessening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE: To heighten the integration degree of an IC by equalizing the area of diffused layer with the contact area for the purpose of lessening its occupied area.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3558775A JPS51111059A (en) | 1975-03-26 | 1975-03-26 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3558775A JPS51111059A (en) | 1975-03-26 | 1975-03-26 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51111059A true JPS51111059A (en) | 1976-10-01 |
Family
ID=12445900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3558775A Pending JPS51111059A (en) | 1975-03-26 | 1975-03-26 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51111059A (en) |
-
1975
- 1975-03-26 JP JP3558775A patent/JPS51111059A/en active Pending
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