JPS4957779A - - Google Patents

Info

Publication number
JPS4957779A
JPS4957779A JP48061739A JP6173973A JPS4957779A JP S4957779 A JPS4957779 A JP S4957779A JP 48061739 A JP48061739 A JP 48061739A JP 6173973 A JP6173973 A JP 6173973A JP S4957779 A JPS4957779 A JP S4957779A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48061739A
Other languages
Japanese (ja)
Other versions
JPS5648976B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4957779A publication Critical patent/JPS4957779A/ja
Publication of JPS5648976B2 publication Critical patent/JPS5648976B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/66Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4846Connecting portions with multiple bonds on the same bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
JP6173973A 1972-06-02 1973-06-01 Expired JPS5648976B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25933272A 1972-06-02 1972-06-02

Publications (2)

Publication Number Publication Date
JPS4957779A true JPS4957779A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-05
JPS5648976B2 JPS5648976B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-11-19

Family

ID=22984501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6173973A Expired JPS5648976B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-06-02 1973-06-01

Country Status (4)

Country Link
JP (1) JPS5648976B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2328090C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1439351A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL185432C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPS59103373A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103372A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103371A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
JP4868683B2 (ja) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 可変容量キャパシタ
JP2017135376A (ja) * 2016-01-22 2017-08-03 Tdk株式会社 薄膜キャパシタ及び電子回路モジュール
JP2023141145A (ja) * 2022-03-23 2023-10-05 日産自動車株式会社 半導体装置、及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151869A (ja) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
CN113555444A (zh) * 2021-07-06 2021-10-26 浙江芯国半导体有限公司 一种高质量氧化镓半导体器件及制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472282U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-01-23 1972-08-25

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE635797C (de) * 1930-07-26 1936-09-28 Hermsdorf Schomburg Isolatoren Hochspannungskondensator mit einem Dielektrikum aus keramischem Stoff oder Glas
DE897861C (de) * 1951-06-29 1953-11-26 Siemens Ag Elektrischer Durchfuehrungskondensator
DE1097563B (de) * 1958-04-26 1961-01-19 Elektroteile G M B H Zugmagnet fuer Gleich- oder Wechselstrom mit vom Anker angetriebener Zahnstange
US3149399A (en) * 1962-09-25 1964-09-22 Sprague Electric Co Silicon capacitor
GB1288278A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1968-12-31 1972-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472282U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-01-23 1972-08-25

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS59103373A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103372A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103371A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
JP4868683B2 (ja) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 可変容量キャパシタ
JP2017135376A (ja) * 2016-01-22 2017-08-03 Tdk株式会社 薄膜キャパシタ及び電子回路モジュール
JP2023141145A (ja) * 2022-03-23 2023-10-05 日産自動車株式会社 半導体装置、及びその製造方法

Also Published As

Publication number Publication date
NL185432C (nl) 1990-04-02
DE2328090A1 (de) 1973-12-13
NL185432B (nl) 1989-11-01
NL7307686A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-12-04
JPS5648976B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-11-19
GB1439351A (en) 1976-06-16
DE2328090C2 (de) 1987-01-22

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