JPS4953629A - - Google Patents

Info

Publication number
JPS4953629A
JPS4953629A JP48084222A JP8422273A JPS4953629A JP S4953629 A JPS4953629 A JP S4953629A JP 48084222 A JP48084222 A JP 48084222A JP 8422273 A JP8422273 A JP 8422273A JP S4953629 A JPS4953629 A JP S4953629A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48084222A
Other languages
Japanese (ja)
Other versions
JPS5130890B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4953629A publication Critical patent/JPS4953629A/ja
Publication of JPS5130890B2 publication Critical patent/JPS5130890B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0751Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136Coating process making radiation sensitive element

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Laminated Bodies (AREA)
  • Printing Plates And Materials Therefor (AREA)
JP48084222A 1972-07-31 1973-07-27 Expired JPS5130890B2 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7227581A FR2193864B1 (enExample) 1972-07-31 1972-07-31
FR7316286A FR2228828B2 (enExample) 1972-07-31 1973-05-07

Publications (2)

Publication Number Publication Date
JPS4953629A true JPS4953629A (enExample) 1974-05-24
JPS5130890B2 JPS5130890B2 (enExample) 1976-09-03

Family

ID=26217249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48084222A Expired JPS5130890B2 (enExample) 1972-07-31 1973-07-27

Country Status (13)

Country Link
US (1) US3911169A (enExample)
JP (1) JPS5130890B2 (enExample)
BE (1) BE802994A (enExample)
CA (1) CA1016017A (enExample)
CH (1) CH588306A5 (enExample)
DE (1) DE2338839A1 (enExample)
ES (1) ES417423A1 (enExample)
FR (2) FR2193864B1 (enExample)
GB (1) GB1440979A (enExample)
IL (1) IL42845A (enExample)
IT (1) IT991478B (enExample)
NL (1) NL7310238A (enExample)
SE (1) SE383689B (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152002A (en) * 1974-08-29 1976-05-08 Hoechst Ag Oo nafutokinonjiajidojudotaide purisenshitaizushitainsatsuban
JPS5763529A (en) * 1980-08-04 1982-04-17 Hughes Aircraft Co Preholograph element and method of producing hologram
JPS5768834A (en) * 1980-10-17 1982-04-27 Matsushita Electric Ind Co Ltd Photographic etching method
JPS62297367A (ja) * 1986-06-17 1987-12-24 Shin Etsu Chem Co Ltd プライマ−組成物
JPH0258062A (ja) * 1988-08-24 1990-02-27 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04366172A (ja) * 1991-06-12 1992-12-18 Shin Etsu Chem Co Ltd シリコーンゴム用プライマー組成物
JP2010121077A (ja) * 2008-11-21 2010-06-03 Shin-Etsu Chemical Co Ltd シアノアクリレート系瞬間接着剤用プライマー組成物
WO2014046055A1 (ja) * 2012-09-24 2014-03-27 日産化学工業株式会社 ヘテロ原子を有する環状有機基含有シリコン含有レジスト下層膜形成組成物

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103045A (en) * 1972-07-31 1978-07-25 Rhone-Poulenc, S.A. Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
JPS53292B2 (enExample) * 1974-02-01 1978-01-07
US3951659A (en) * 1974-12-09 1976-04-20 The United States Of America As Represented By The Secretary Of The Navy Method for resist coating of a glass substrate
JPS5217815A (en) * 1975-07-30 1977-02-10 Fuji Photo Film Co Ltd Substrate and material using the same
US4075367A (en) * 1976-03-18 1978-02-21 Ncr Corporation Semiconductor processing of silicon nitride
US4173683A (en) * 1977-06-13 1979-11-06 Rca Corporation Chemically treating the overcoat of a semiconductor device
US4164422A (en) * 1977-09-19 1979-08-14 Napp Systems (Usa), Inc. Water developable, photopolymer printing plates having ink-repulsive non-image areas
JPS54158883U (enExample) * 1978-04-28 1979-11-06
US4615962A (en) * 1979-06-25 1986-10-07 University Patents, Inc. Diacetylenes having liquid crystal phases
US4439514A (en) * 1979-06-25 1984-03-27 University Patents, Inc. Photoresistive compositions
US4581315A (en) * 1979-06-25 1986-04-08 University Patents, Inc. Photoresistive compositions
US4352839A (en) * 1981-05-26 1982-10-05 General Electric Company Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide
US4524126A (en) * 1981-06-30 1985-06-18 International Business Machines Corporation Adhesion of a photoresist to a substrate
DE3305923C2 (de) * 1983-02-21 1986-10-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vorbacken von mit Positiv-Fotolack auf der Basis von Naphtoquinondiazid und Phenolformaldehydharz beschichteten Substraten
US4497890A (en) * 1983-04-08 1985-02-05 Motorola, Inc. Process for improving adhesion of resist to gold
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
JPH0618885B2 (ja) * 1986-02-12 1994-03-16 東燃株式会社 ポリシロキサザンおよびその製法
US5166104A (en) * 1986-02-12 1992-11-24 Toa Nenryo Kogyo Kabushiki Kaisha Polysiloxazanes, silicon oxynitride fibers and processes for producing same
US4770974A (en) * 1986-09-18 1988-09-13 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
JPS6377052A (ja) * 1986-09-18 1988-04-07 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション レジスト組成物
US4976817A (en) * 1988-12-09 1990-12-11 Morton International, Inc. Wet lamination process and apparatus
US5262273A (en) * 1992-02-25 1993-11-16 International Business Machines Corporation Photosensitive reactive ion etch barrier
US5270151A (en) * 1992-03-17 1993-12-14 International Business Machines Corporation Spin on oxygen reactive ion etch barrier
US5215861A (en) * 1992-03-17 1993-06-01 International Business Machines Corporation Thermographic reversible photoresist
US5920037A (en) 1997-05-12 1999-07-06 International Business Machines Corporation Conductive bonding design for metal backed circuits
US6613184B1 (en) 1997-05-12 2003-09-02 International Business Machines Corporation Stable interfaces between electrically conductive adhesives and metals
US6534724B1 (en) 1997-05-28 2003-03-18 International Business Machines Corporation Enhanced design and process for a conductive adhesive
JP5291275B2 (ja) * 2000-07-27 2013-09-18 有限会社コンタミネーション・コントロール・サービス コーティング膜が施された部材及びコーティング膜の製造方法
US6455443B1 (en) * 2001-02-21 2002-09-24 International Business Machines Corporation Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
US6534184B2 (en) * 2001-02-26 2003-03-18 Kion Corporation Polysilazane/polysiloxane block copolymers
WO2006129773A1 (ja) * 2005-05-31 2006-12-07 Toho Catalyst Co., Ltd. アミノシラン化合物、オレフィン類重合用触媒成分および触媒並びにこれを用いたオレフィン類重合体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549368A (en) * 1968-07-02 1970-12-22 Ibm Process for improving photoresist adhesion
US3726943A (en) * 1971-08-12 1973-04-10 Union Carbide Corp Ethylenically unsaturated monomer polymerization with silyl acyl peroxides and acyl peroxy polysiloxanes

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152002A (en) * 1974-08-29 1976-05-08 Hoechst Ag Oo nafutokinonjiajidojudotaide purisenshitaizushitainsatsuban
JPS5763529A (en) * 1980-08-04 1982-04-17 Hughes Aircraft Co Preholograph element and method of producing hologram
JPS5768834A (en) * 1980-10-17 1982-04-27 Matsushita Electric Ind Co Ltd Photographic etching method
JPS62297367A (ja) * 1986-06-17 1987-12-24 Shin Etsu Chem Co Ltd プライマ−組成物
JPH0258062A (ja) * 1988-08-24 1990-02-27 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04366172A (ja) * 1991-06-12 1992-12-18 Shin Etsu Chem Co Ltd シリコーンゴム用プライマー組成物
JP2010121077A (ja) * 2008-11-21 2010-06-03 Shin-Etsu Chemical Co Ltd シアノアクリレート系瞬間接着剤用プライマー組成物
WO2014046055A1 (ja) * 2012-09-24 2014-03-27 日産化学工業株式会社 ヘテロ原子を有する環状有機基含有シリコン含有レジスト下層膜形成組成物
US10079146B2 (en) 2012-09-24 2018-09-18 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom

Also Published As

Publication number Publication date
US3911169A (en) 1975-10-07
ES417423A1 (es) 1976-06-16
IT991478B (it) 1975-07-30
FR2193864B1 (enExample) 1974-12-27
IL42845A0 (en) 1973-10-25
JPS5130890B2 (enExample) 1976-09-03
GB1440979A (en) 1976-06-30
BE802994A (fr) 1974-01-30
NL7310238A (enExample) 1974-02-04
FR2228828B2 (enExample) 1975-11-21
CH588306A5 (enExample) 1977-05-31
FR2228828A2 (enExample) 1974-12-06
DE2338839A1 (de) 1974-02-21
CA1016017A (en) 1977-08-23
IL42845A (en) 1975-12-31
FR2193864A1 (enExample) 1974-02-22
SE383689B (sv) 1976-03-29

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