BE802994A - Procede pour ameliorer l'adherence de revetement en polymeres photoresustants a des surfaces d'oydes mineraux - Google Patents
Procede pour ameliorer l'adherence de revetement en polymeres photoresustants a des surfaces d'oydes minerauxInfo
- Publication number
- BE802994A BE802994A BE134041A BE134041A BE802994A BE 802994 A BE802994 A BE 802994A BE 134041 A BE134041 A BE 134041A BE 134041 A BE134041 A BE 134041A BE 802994 A BE802994 A BE 802994A
- Authority
- BE
- Belgium
- Prior art keywords
- ood
- mineral
- adhesion
- improving
- light
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 229910052500 inorganic mineral Inorganic materials 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011707 mineral Substances 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Laminated Bodies (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Printing Plates And Materials Therefor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7227581A FR2193864B1 (fr) | 1972-07-31 | 1972-07-31 | |
FR7316286A FR2228828B2 (fr) | 1972-07-31 | 1973-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE802994A true BE802994A (fr) | 1974-01-30 |
Family
ID=26217249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE134041A BE802994A (fr) | 1972-07-31 | 1973-07-30 | Procede pour ameliorer l'adherence de revetement en polymeres photoresustants a des surfaces d'oydes mineraux |
Country Status (13)
Country | Link |
---|---|
US (1) | US3911169A (fr) |
JP (1) | JPS5130890B2 (fr) |
BE (1) | BE802994A (fr) |
CA (1) | CA1016017A (fr) |
CH (1) | CH588306A5 (fr) |
DE (1) | DE2338839A1 (fr) |
ES (1) | ES417423A1 (fr) |
FR (2) | FR2193864B1 (fr) |
GB (1) | GB1440979A (fr) |
IL (1) | IL42845A (fr) |
IT (1) | IT991478B (fr) |
NL (1) | NL7310238A (fr) |
SE (1) | SE383689B (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4103045A (en) * | 1972-07-31 | 1978-07-25 | Rhone-Poulenc, S.A. | Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides |
JPS53292B2 (fr) * | 1974-02-01 | 1978-01-07 | ||
DE2441315A1 (de) * | 1974-08-29 | 1976-03-11 | Hoechst Ag | Mit o-naphthochinondiazidverbindung vorsensibilisierte druckplatte |
US3951659A (en) * | 1974-12-09 | 1976-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for resist coating of a glass substrate |
JPS5217815A (en) * | 1975-07-30 | 1977-02-10 | Fuji Photo Film Co Ltd | Substrate and material using the same |
US4075367A (en) * | 1976-03-18 | 1978-02-21 | Ncr Corporation | Semiconductor processing of silicon nitride |
US4173683A (en) * | 1977-06-13 | 1979-11-06 | Rca Corporation | Chemically treating the overcoat of a semiconductor device |
US4164422A (en) * | 1977-09-19 | 1979-08-14 | Napp Systems (Usa), Inc. | Water developable, photopolymer printing plates having ink-repulsive non-image areas |
JPS54158883U (fr) * | 1978-04-28 | 1979-11-06 | ||
US4581315A (en) * | 1979-06-25 | 1986-04-08 | University Patents, Inc. | Photoresistive compositions |
US4439514A (en) * | 1979-06-25 | 1984-03-27 | University Patents, Inc. | Photoresistive compositions |
US4615962A (en) * | 1979-06-25 | 1986-10-07 | University Patents, Inc. | Diacetylenes having liquid crystal phases |
US4330604A (en) * | 1980-08-04 | 1982-05-18 | Hughes Aircraft Company | Fabrication of holograms on plastic substrates |
JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
US4352839A (en) * | 1981-05-26 | 1982-10-05 | General Electric Company | Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide |
US4524126A (en) * | 1981-06-30 | 1985-06-18 | International Business Machines Corporation | Adhesion of a photoresist to a substrate |
DE3305923C2 (de) * | 1983-02-21 | 1986-10-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Vorbacken von mit Positiv-Fotolack auf der Basis von Naphtoquinondiazid und Phenolformaldehydharz beschichteten Substraten |
US4497890A (en) * | 1983-04-08 | 1985-02-05 | Motorola, Inc. | Process for improving adhesion of resist to gold |
EP0204631A3 (fr) * | 1985-06-04 | 1987-05-20 | Fairchild Semiconductor Corporation | Structures semi-conductrices comprenant des couches de nivellement en polysiloxane |
US5166104A (en) * | 1986-02-12 | 1992-11-24 | Toa Nenryo Kogyo Kabushiki Kaisha | Polysiloxazanes, silicon oxynitride fibers and processes for producing same |
JPH0618885B2 (ja) * | 1986-02-12 | 1994-03-16 | 東燃株式会社 | ポリシロキサザンおよびその製法 |
JPS62297367A (ja) * | 1986-06-17 | 1987-12-24 | Shin Etsu Chem Co Ltd | プライマ−組成物 |
JPS6377052A (ja) * | 1986-09-18 | 1988-04-07 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | レジスト組成物 |
US4770974A (en) * | 1986-09-18 | 1988-09-13 | International Business Machines Corporation | Microlithographic resist containing poly(1,1-dialkylsilazane) |
JPH0258062A (ja) * | 1988-08-24 | 1990-02-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4976817A (en) * | 1988-12-09 | 1990-12-11 | Morton International, Inc. | Wet lamination process and apparatus |
JPH0791528B2 (ja) * | 1991-06-12 | 1995-10-04 | 信越化学工業株式会社 | シリコーンゴム用プライマー組成物 |
US5262273A (en) * | 1992-02-25 | 1993-11-16 | International Business Machines Corporation | Photosensitive reactive ion etch barrier |
US5215861A (en) * | 1992-03-17 | 1993-06-01 | International Business Machines Corporation | Thermographic reversible photoresist |
US5270151A (en) * | 1992-03-17 | 1993-12-14 | International Business Machines Corporation | Spin on oxygen reactive ion etch barrier |
US5920037A (en) | 1997-05-12 | 1999-07-06 | International Business Machines Corporation | Conductive bonding design for metal backed circuits |
US6613184B1 (en) | 1997-05-12 | 2003-09-02 | International Business Machines Corporation | Stable interfaces between electrically conductive adhesives and metals |
US6534724B1 (en) * | 1997-05-28 | 2003-03-18 | International Business Machines Corporation | Enhanced design and process for a conductive adhesive |
JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
US6455443B1 (en) * | 2001-02-21 | 2002-09-24 | International Business Machines Corporation | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
US6534184B2 (en) * | 2001-02-26 | 2003-03-18 | Kion Corporation | Polysilazane/polysiloxane block copolymers |
JP5158856B2 (ja) | 2005-05-31 | 2013-03-06 | 東邦チタニウム株式会社 | アミノシラン化合物、オレフィン類重合用触媒成分および触媒並びにこれを用いたオレフィン類重合体の製造方法 |
JP5136791B2 (ja) * | 2008-11-21 | 2013-02-06 | 信越化学工業株式会社 | シアノアクリレート系瞬間接着剤用プライマー組成物 |
SG11201502223PA (en) * | 2012-09-24 | 2015-05-28 | Nissan Chemical Ind Ltd | Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3549368A (en) * | 1968-07-02 | 1970-12-22 | Ibm | Process for improving photoresist adhesion |
US3726943A (en) * | 1971-08-12 | 1973-04-10 | Union Carbide Corp | Ethylenically unsaturated monomer polymerization with silyl acyl peroxides and acyl peroxy polysiloxanes |
-
1972
- 1972-07-31 FR FR7227581A patent/FR2193864B1/fr not_active Expired
-
1973
- 1973-05-07 FR FR7316286A patent/FR2228828B2/fr not_active Expired
- 1973-07-23 NL NL7310238A patent/NL7310238A/xx unknown
- 1973-07-27 JP JP48084222A patent/JPS5130890B2/ja not_active Expired
- 1973-07-30 SE SE7310501A patent/SE383689B/xx unknown
- 1973-07-30 GB GB3624573A patent/GB1440979A/en not_active Expired
- 1973-07-30 BE BE134041A patent/BE802994A/fr unknown
- 1973-07-30 CA CA177,571A patent/CA1016017A/fr not_active Expired
- 1973-07-30 US US383507A patent/US3911169A/en not_active Expired - Lifetime
- 1973-07-30 CH CH1106973A patent/CH588306A5/xx not_active IP Right Cessation
- 1973-07-30 IL IL42845A patent/IL42845A/xx unknown
- 1973-07-31 IT IT27352/73A patent/IT991478B/it active
- 1973-07-31 DE DE19732338839 patent/DE2338839A1/de active Pending
- 1973-07-31 ES ES417423A patent/ES417423A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2228828A2 (fr) | 1974-12-06 |
SE383689B (sv) | 1976-03-29 |
JPS4953629A (fr) | 1974-05-24 |
IL42845A0 (en) | 1973-10-25 |
IL42845A (en) | 1975-12-31 |
NL7310238A (fr) | 1974-02-04 |
ES417423A1 (es) | 1976-06-16 |
FR2193864A1 (fr) | 1974-02-22 |
JPS5130890B2 (fr) | 1976-09-03 |
CA1016017A (fr) | 1977-08-23 |
DE2338839A1 (de) | 1974-02-21 |
CH588306A5 (fr) | 1977-05-31 |
GB1440979A (en) | 1976-06-30 |
US3911169A (en) | 1975-10-07 |
FR2193864B1 (fr) | 1974-12-27 |
FR2228828B2 (fr) | 1975-11-21 |
IT991478B (it) | 1975-07-30 |
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