ES417423A1 - Procedimiento para mejorar la adherencia de revestimientos de polimeros fotorresistentes a capas de oxidos minerales. - Google Patents

Procedimiento para mejorar la adherencia de revestimientos de polimeros fotorresistentes a capas de oxidos minerales.

Info

Publication number
ES417423A1
ES417423A1 ES417423A ES417423A ES417423A1 ES 417423 A1 ES417423 A1 ES 417423A1 ES 417423 A ES417423 A ES 417423A ES 417423 A ES417423 A ES 417423A ES 417423 A1 ES417423 A1 ES 417423A1
Authority
ES
Spain
Prior art keywords
radical
carbon atoms
formulae
photoresistant
polymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES417423A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rhone Poulenc SA
Original Assignee
Rhone Poulenc SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rhone Poulenc SA filed Critical Rhone Poulenc SA
Publication of ES417423A1 publication Critical patent/ES417423A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Silicon Polymers (AREA)
  • Printing Plates And Materials Therefor (AREA)
ES417423A 1972-07-31 1973-07-31 Procedimiento para mejorar la adherencia de revestimientos de polimeros fotorresistentes a capas de oxidos minerales. Expired ES417423A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7227581A FR2193864B1 (es) 1972-07-31 1972-07-31
FR7316286A FR2228828B2 (es) 1972-07-31 1973-05-07

Publications (1)

Publication Number Publication Date
ES417423A1 true ES417423A1 (es) 1976-06-16

Family

ID=26217249

Family Applications (1)

Application Number Title Priority Date Filing Date
ES417423A Expired ES417423A1 (es) 1972-07-31 1973-07-31 Procedimiento para mejorar la adherencia de revestimientos de polimeros fotorresistentes a capas de oxidos minerales.

Country Status (13)

Country Link
US (1) US3911169A (es)
JP (1) JPS5130890B2 (es)
BE (1) BE802994A (es)
CA (1) CA1016017A (es)
CH (1) CH588306A5 (es)
DE (1) DE2338839A1 (es)
ES (1) ES417423A1 (es)
FR (2) FR2193864B1 (es)
GB (1) GB1440979A (es)
IL (1) IL42845A (es)
IT (1) IT991478B (es)
NL (1) NL7310238A (es)
SE (1) SE383689B (es)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103045A (en) * 1972-07-31 1978-07-25 Rhone-Poulenc, S.A. Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
JPS53292B2 (es) * 1974-02-01 1978-01-07
DE2441315A1 (de) * 1974-08-29 1976-03-11 Hoechst Ag Mit o-naphthochinondiazidverbindung vorsensibilisierte druckplatte
US3951659A (en) * 1974-12-09 1976-04-20 The United States Of America As Represented By The Secretary Of The Navy Method for resist coating of a glass substrate
JPS5217815A (en) * 1975-07-30 1977-02-10 Fuji Photo Film Co Ltd Substrate and material using the same
US4075367A (en) * 1976-03-18 1978-02-21 Ncr Corporation Semiconductor processing of silicon nitride
US4173683A (en) * 1977-06-13 1979-11-06 Rca Corporation Chemically treating the overcoat of a semiconductor device
US4164422A (en) * 1977-09-19 1979-08-14 Napp Systems (Usa), Inc. Water developable, photopolymer printing plates having ink-repulsive non-image areas
JPS54158883U (es) * 1978-04-28 1979-11-06
US4581315A (en) * 1979-06-25 1986-04-08 University Patents, Inc. Photoresistive compositions
US4615962A (en) * 1979-06-25 1986-10-07 University Patents, Inc. Diacetylenes having liquid crystal phases
US4439514A (en) * 1979-06-25 1984-03-27 University Patents, Inc. Photoresistive compositions
US4330604A (en) * 1980-08-04 1982-05-18 Hughes Aircraft Company Fabrication of holograms on plastic substrates
JPS5768834A (en) * 1980-10-17 1982-04-27 Matsushita Electric Ind Co Ltd Photographic etching method
US4352839A (en) * 1981-05-26 1982-10-05 General Electric Company Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide
US4524126A (en) * 1981-06-30 1985-06-18 International Business Machines Corporation Adhesion of a photoresist to a substrate
DE3305923C2 (de) * 1983-02-21 1986-10-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vorbacken von mit Positiv-Fotolack auf der Basis von Naphtoquinondiazid und Phenolformaldehydharz beschichteten Substraten
US4497890A (en) * 1983-04-08 1985-02-05 Motorola, Inc. Process for improving adhesion of resist to gold
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
US5166104A (en) * 1986-02-12 1992-11-24 Toa Nenryo Kogyo Kabushiki Kaisha Polysiloxazanes, silicon oxynitride fibers and processes for producing same
JPH0618885B2 (ja) * 1986-02-12 1994-03-16 東燃株式会社 ポリシロキサザンおよびその製法
JPS62297367A (ja) * 1986-06-17 1987-12-24 Shin Etsu Chem Co Ltd プライマ−組成物
US4770974A (en) * 1986-09-18 1988-09-13 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
JPS6377052A (ja) * 1986-09-18 1988-04-07 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション レジスト組成物
JPH0258062A (ja) * 1988-08-24 1990-02-27 Mitsubishi Electric Corp 半導体装置の製造方法
US4976817A (en) * 1988-12-09 1990-12-11 Morton International, Inc. Wet lamination process and apparatus
JPH0791528B2 (ja) * 1991-06-12 1995-10-04 信越化学工業株式会社 シリコーンゴム用プライマー組成物
US5262273A (en) * 1992-02-25 1993-11-16 International Business Machines Corporation Photosensitive reactive ion etch barrier
US5215861A (en) * 1992-03-17 1993-06-01 International Business Machines Corporation Thermographic reversible photoresist
US5270151A (en) * 1992-03-17 1993-12-14 International Business Machines Corporation Spin on oxygen reactive ion etch barrier
US5920037A (en) * 1997-05-12 1999-07-06 International Business Machines Corporation Conductive bonding design for metal backed circuits
US6613184B1 (en) 1997-05-12 2003-09-02 International Business Machines Corporation Stable interfaces between electrically conductive adhesives and metals
US6534724B1 (en) 1997-05-28 2003-03-18 International Business Machines Corporation Enhanced design and process for a conductive adhesive
JP5291275B2 (ja) * 2000-07-27 2013-09-18 有限会社コンタミネーション・コントロール・サービス コーティング膜が施された部材及びコーティング膜の製造方法
US6455443B1 (en) * 2001-02-21 2002-09-24 International Business Machines Corporation Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
US6534184B2 (en) * 2001-02-26 2003-03-18 Kion Corporation Polysilazane/polysiloxane block copolymers
KR101234427B1 (ko) * 2005-05-31 2013-02-18 도호 티타늄 가부시키가이샤 아미노실란 화합물, 올레핀류 중합용 촉매 성분 및 촉매 및이것을 이용한 올레핀류 중합체의 제조 방법
JP5136791B2 (ja) * 2008-11-21 2013-02-06 信越化学工業株式会社 シアノアクリレート系瞬間接着剤用プライマー組成物
KR102139092B1 (ko) * 2012-09-24 2020-07-29 닛산 가가쿠 가부시키가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549368A (en) * 1968-07-02 1970-12-22 Ibm Process for improving photoresist adhesion
US3726943A (en) * 1971-08-12 1973-04-10 Union Carbide Corp Ethylenically unsaturated monomer polymerization with silyl acyl peroxides and acyl peroxy polysiloxanes

Also Published As

Publication number Publication date
GB1440979A (en) 1976-06-30
DE2338839A1 (de) 1974-02-21
IL42845A0 (en) 1973-10-25
JPS5130890B2 (es) 1976-09-03
JPS4953629A (es) 1974-05-24
FR2228828A2 (es) 1974-12-06
NL7310238A (es) 1974-02-04
CA1016017A (en) 1977-08-23
BE802994A (fr) 1974-01-30
SE383689B (sv) 1976-03-29
IT991478B (it) 1975-07-30
FR2193864B1 (es) 1974-12-27
US3911169A (en) 1975-10-07
CH588306A5 (es) 1977-05-31
FR2193864A1 (es) 1974-02-22
IL42845A (en) 1975-12-31
FR2228828B2 (es) 1975-11-21

Similar Documents

Publication Publication Date Title
ES417423A1 (es) Procedimiento para mejorar la adherencia de revestimientos de polimeros fotorresistentes a capas de oxidos minerales.
SE7709380L (sv) Siloxan-tennbeleggningar
ES451518A2 (es) Procedimiento para la preparacion de 4-(polialcoxi-fenil)-2-pirrolidonas.
SE7509214L (sv) Vidheftningsforbettrande medel
GB1324964A (en) Organosiloxane mixture
GB1306918A (en) Method of silylating organic vinylic polymers
GB1095928A (en) Aminoxy-substituted silicon materials
GB1306810A (en) Preparation of linear halosiloxanes and compounds derived therefrom
ES8402323A1 (es) Procedimiento para la obtencion de cuerpos de moldeo a base de elastomeros de poliurea.
GB1130309A (en) Improvements in "cyclopolysiloxanes"
GB1088150A (en) A method for making organosilicon polymers
ES459714A1 (es) Procedimiento para la preparacion de silanos insaturados quecontienen grupos ceto.
GB1249283A (en) Resinous organosiloxane copolymers having acetoxy functionality
ATE20237T1 (de) Verfahren zur herstellung von silikonen.
ES428852A1 (es) Procedimiento para la preparacion de espumas de policlorurode vinilo.
ES449304A1 (es) Metodo para la preparacion de sulfolaniloxialcohilhpeta al- cohicilciclotetra-siloxanos.
GB1016512A (en) Preparation of a new type polymer silicopolypropylene
ES428842A1 (es) Procedimiento para la tincion de poliesteres en masa.
GB938313A (en) Novel organohalosilanes and siloxanes
GB980107A (en) Methylphenylpolysiloxanes
GB1517557A (en) Thermoplastic polysiloxane elastomers
GB1425286A (en) Polysiloxanes
GB1169268A (en) Organosiliconcarbodiimide Polymers and Process for their Preparation
FR2300767A1 (fr) Composes silicies polyethyleniques
GB1286329A (en) Process and composition for treating garments