FR2228828A2 - - Google Patents

Info

Publication number
FR2228828A2
FR2228828A2 FR7316286A FR7316286A FR2228828A2 FR 2228828 A2 FR2228828 A2 FR 2228828A2 FR 7316286 A FR7316286 A FR 7316286A FR 7316286 A FR7316286 A FR 7316286A FR 2228828 A2 FR2228828 A2 FR 2228828A2
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7316286A
Other versions
FR2228828B2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rhone Poulenc SA
Original Assignee
Rhone Poulenc SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR7227581A priority Critical patent/FR2193864B1/fr
Application filed by Rhone Poulenc SA filed Critical Rhone Poulenc SA
Priority to FR7316286A priority patent/FR2228828B2/fr
Priority to NL7310238A priority patent/NL7310238A/xx
Priority to JP48084222A priority patent/JPS5130890B2/ja
Priority to GB3624573A priority patent/GB1440979A/en
Priority to CH1106973A priority patent/CH588306A5/xx
Priority to US383507A priority patent/US3911169A/en
Priority to CA177,571A priority patent/CA1016017A/fr
Priority to IL42845A priority patent/IL42845A/xx
Priority to SE7310501A priority patent/SE383689B/xx
Priority to BE134041A priority patent/BE802994A/fr
Priority to ES417423A priority patent/ES417423A1/es
Priority to IT27352/73A priority patent/IT991478B/it
Priority to DE19732338839 priority patent/DE2338839A1/de
Publication of FR2228828A2 publication Critical patent/FR2228828A2/fr
Priority to US05/555,889 priority patent/US4103045A/en
Application granted granted Critical
Publication of FR2228828B2 publication Critical patent/FR2228828B2/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Silicon Polymers (AREA)
  • Printing Plates And Materials Therefor (AREA)
FR7316286A 1972-07-31 1973-05-07 Expired FR2228828B2 (fr)

Priority Applications (15)

Application Number Priority Date Filing Date Title
FR7227581A FR2193864B1 (fr) 1972-07-31 1972-07-31
FR7316286A FR2228828B2 (fr) 1972-07-31 1973-05-07
NL7310238A NL7310238A (fr) 1972-07-31 1973-07-23
JP48084222A JPS5130890B2 (fr) 1972-07-31 1973-07-27
SE7310501A SE383689B (sv) 1972-07-31 1973-07-30 Forfarande for forbettring av vidheftningen av beleggningar av fotoresistenta polymerer pa ytorna av oorganiska oxider genom behandling med kiselorganiska foreningar
US383507A US3911169A (en) 1972-07-31 1973-07-30 Process for improving the adhesion of coating made of photoresistant polymers to surfaces of inorganic oxides
CA177,571A CA1016017A (fr) 1972-07-31 1973-07-30 Procede pour ameliorer l'adherence de revetements en polymeres photoresistants a des surfaces d'oxydes mineraux
IL42845A IL42845A (en) 1972-07-31 1973-07-30 Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides and the products obtained thereby
GB3624573A GB1440979A (en) 1972-07-31 1973-07-30 Process for the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
BE134041A BE802994A (fr) 1972-07-31 1973-07-30 Procede pour ameliorer l'adherence de revetement en polymeres photoresustants a des surfaces d'oydes mineraux
CH1106973A CH588306A5 (fr) 1972-07-31 1973-07-30
ES417423A ES417423A1 (es) 1972-07-31 1973-07-31 Procedimiento para mejorar la adherencia de revestimientos de polimeros fotorresistentes a capas de oxidos minerales.
IT27352/73A IT991478B (it) 1972-07-31 1973-07-31 Procedimento per migliorare l aderenza da parte di rivestimen ti di polimeri fotoresistenti a superfici d ossidi metallici
DE19732338839 DE2338839A1 (de) 1972-07-31 1973-07-31 Verfahren zur verbesserung des haftvermoegens von ueberzuegen aus photoresistpolymeren an oberflaechen von anorganischen oxyden
US05/555,889 US4103045A (en) 1972-07-31 1975-03-06 Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7227581A FR2193864B1 (fr) 1972-07-31 1972-07-31
FR7316286A FR2228828B2 (fr) 1972-07-31 1973-05-07

Publications (2)

Publication Number Publication Date
FR2228828A2 true FR2228828A2 (fr) 1974-12-06
FR2228828B2 FR2228828B2 (fr) 1975-11-21

Family

ID=26217249

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7227581A Expired FR2193864B1 (fr) 1972-07-31 1972-07-31
FR7316286A Expired FR2228828B2 (fr) 1972-07-31 1973-05-07

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7227581A Expired FR2193864B1 (fr) 1972-07-31 1972-07-31

Country Status (13)

Country Link
US (1) US3911169A (fr)
JP (1) JPS5130890B2 (fr)
BE (1) BE802994A (fr)
CA (1) CA1016017A (fr)
CH (1) CH588306A5 (fr)
DE (1) DE2338839A1 (fr)
ES (1) ES417423A1 (fr)
FR (2) FR2193864B1 (fr)
GB (1) GB1440979A (fr)
IL (1) IL42845A (fr)
IT (1) IT991478B (fr)
NL (1) NL7310238A (fr)
SE (1) SE383689B (fr)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103045A (en) * 1972-07-31 1978-07-25 Rhone-Poulenc, S.A. Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
JPS53292B2 (fr) * 1974-02-01 1978-01-07
DE2441315A1 (de) * 1974-08-29 1976-03-11 Hoechst Ag Mit o-naphthochinondiazidverbindung vorsensibilisierte druckplatte
US3951659A (en) * 1974-12-09 1976-04-20 The United States Of America As Represented By The Secretary Of The Navy Method for resist coating of a glass substrate
JPS5217815A (en) * 1975-07-30 1977-02-10 Fuji Photo Film Co Ltd Substrate and material using the same
US4075367A (en) * 1976-03-18 1978-02-21 Ncr Corporation Semiconductor processing of silicon nitride
US4173683A (en) * 1977-06-13 1979-11-06 Rca Corporation Chemically treating the overcoat of a semiconductor device
US4164422A (en) * 1977-09-19 1979-08-14 Napp Systems (Usa), Inc. Water developable, photopolymer printing plates having ink-repulsive non-image areas
JPS54158883U (fr) * 1978-04-28 1979-11-06
US4581315A (en) * 1979-06-25 1986-04-08 University Patents, Inc. Photoresistive compositions
US4615962A (en) * 1979-06-25 1986-10-07 University Patents, Inc. Diacetylenes having liquid crystal phases
US4439514A (en) * 1979-06-25 1984-03-27 University Patents, Inc. Photoresistive compositions
US4330604A (en) * 1980-08-04 1982-05-18 Hughes Aircraft Company Fabrication of holograms on plastic substrates
JPS5768834A (en) * 1980-10-17 1982-04-27 Matsushita Electric Ind Co Ltd Photographic etching method
US4352839A (en) * 1981-05-26 1982-10-05 General Electric Company Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide
US4524126A (en) * 1981-06-30 1985-06-18 International Business Machines Corporation Adhesion of a photoresist to a substrate
DE3305923C2 (de) * 1983-02-21 1986-10-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vorbacken von mit Positiv-Fotolack auf der Basis von Naphtoquinondiazid und Phenolformaldehydharz beschichteten Substraten
US4497890A (en) * 1983-04-08 1985-02-05 Motorola, Inc. Process for improving adhesion of resist to gold
EP0204631A3 (fr) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Structures semi-conductrices comprenant des couches de nivellement en polysiloxane
US5166104A (en) * 1986-02-12 1992-11-24 Toa Nenryo Kogyo Kabushiki Kaisha Polysiloxazanes, silicon oxynitride fibers and processes for producing same
JPH0618885B2 (ja) * 1986-02-12 1994-03-16 東燃株式会社 ポリシロキサザンおよびその製法
JPS62297367A (ja) * 1986-06-17 1987-12-24 Shin Etsu Chem Co Ltd プライマ−組成物
US4770974A (en) * 1986-09-18 1988-09-13 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
JPS6377052A (ja) * 1986-09-18 1988-04-07 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション レジスト組成物
JPH0258062A (ja) * 1988-08-24 1990-02-27 Mitsubishi Electric Corp 半導体装置の製造方法
US4976817A (en) * 1988-12-09 1990-12-11 Morton International, Inc. Wet lamination process and apparatus
JPH0791528B2 (ja) * 1991-06-12 1995-10-04 信越化学工業株式会社 シリコーンゴム用プライマー組成物
US5262273A (en) * 1992-02-25 1993-11-16 International Business Machines Corporation Photosensitive reactive ion etch barrier
US5215861A (en) * 1992-03-17 1993-06-01 International Business Machines Corporation Thermographic reversible photoresist
US5270151A (en) * 1992-03-17 1993-12-14 International Business Machines Corporation Spin on oxygen reactive ion etch barrier
US5920037A (en) * 1997-05-12 1999-07-06 International Business Machines Corporation Conductive bonding design for metal backed circuits
US6613184B1 (en) 1997-05-12 2003-09-02 International Business Machines Corporation Stable interfaces between electrically conductive adhesives and metals
US6534724B1 (en) 1997-05-28 2003-03-18 International Business Machines Corporation Enhanced design and process for a conductive adhesive
JP5291275B2 (ja) * 2000-07-27 2013-09-18 有限会社コンタミネーション・コントロール・サービス コーティング膜が施された部材及びコーティング膜の製造方法
US6455443B1 (en) * 2001-02-21 2002-09-24 International Business Machines Corporation Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
US6534184B2 (en) * 2001-02-26 2003-03-18 Kion Corporation Polysilazane/polysiloxane block copolymers
KR101234427B1 (ko) * 2005-05-31 2013-02-18 도호 티타늄 가부시키가이샤 아미노실란 화합물, 올레핀류 중합용 촉매 성분 및 촉매 및이것을 이용한 올레핀류 중합체의 제조 방법
JP5136791B2 (ja) * 2008-11-21 2013-02-06 信越化学工業株式会社 シアノアクリレート系瞬間接着剤用プライマー組成物
KR102139092B1 (ko) * 2012-09-24 2020-07-29 닛산 가가쿠 가부시키가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물

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US3549368A (en) * 1968-07-02 1970-12-22 Ibm Process for improving photoresist adhesion
US3726943A (en) * 1971-08-12 1973-04-10 Union Carbide Corp Ethylenically unsaturated monomer polymerization with silyl acyl peroxides and acyl peroxy polysiloxanes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
GB1440979A (en) 1976-06-30
DE2338839A1 (de) 1974-02-21
IL42845A0 (en) 1973-10-25
JPS5130890B2 (fr) 1976-09-03
JPS4953629A (fr) 1974-05-24
NL7310238A (fr) 1974-02-04
CA1016017A (fr) 1977-08-23
BE802994A (fr) 1974-01-30
SE383689B (sv) 1976-03-29
IT991478B (it) 1975-07-30
ES417423A1 (es) 1976-06-16
FR2193864B1 (fr) 1974-12-27
US3911169A (en) 1975-10-07
CH588306A5 (fr) 1977-05-31
FR2193864A1 (fr) 1974-02-22
IL42845A (en) 1975-12-31
FR2228828B2 (fr) 1975-11-21

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