CA1016017A - Process for improving the adhesion of photoresistant polymer coatings to mineral oxide surfaces - Google Patents
Process for improving the adhesion of photoresistant polymer coatings to mineral oxide surfacesInfo
- Publication number
- CA1016017A CA1016017A CA177,571A CA177571A CA1016017A CA 1016017 A CA1016017 A CA 1016017A CA 177571 A CA177571 A CA 177571A CA 1016017 A CA1016017 A CA 1016017A
- Authority
- CA
- Canada
- Prior art keywords
- photoresistant
- adhesion
- improving
- polymer coatings
- oxide surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Laminated Bodies (AREA)
- Printing Plates And Materials Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7227581A FR2193864B1 (enExample) | 1972-07-31 | 1972-07-31 | |
| FR7316286A FR2228828B2 (enExample) | 1972-07-31 | 1973-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1016017A true CA1016017A (en) | 1977-08-23 |
Family
ID=26217249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA177,571A Expired CA1016017A (en) | 1972-07-31 | 1973-07-30 | Process for improving the adhesion of photoresistant polymer coatings to mineral oxide surfaces |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3911169A (enExample) |
| JP (1) | JPS5130890B2 (enExample) |
| BE (1) | BE802994A (enExample) |
| CA (1) | CA1016017A (enExample) |
| CH (1) | CH588306A5 (enExample) |
| DE (1) | DE2338839A1 (enExample) |
| ES (1) | ES417423A1 (enExample) |
| FR (2) | FR2193864B1 (enExample) |
| GB (1) | GB1440979A (enExample) |
| IL (1) | IL42845A (enExample) |
| IT (1) | IT991478B (enExample) |
| NL (1) | NL7310238A (enExample) |
| SE (1) | SE383689B (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103045A (en) * | 1972-07-31 | 1978-07-25 | Rhone-Poulenc, S.A. | Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides |
| JPS53292B2 (enExample) * | 1974-02-01 | 1978-01-07 | ||
| DE2441315A1 (de) * | 1974-08-29 | 1976-03-11 | Hoechst Ag | Mit o-naphthochinondiazidverbindung vorsensibilisierte druckplatte |
| US3951659A (en) * | 1974-12-09 | 1976-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for resist coating of a glass substrate |
| JPS5217815A (en) * | 1975-07-30 | 1977-02-10 | Fuji Photo Film Co Ltd | Substrate and material using the same |
| US4075367A (en) * | 1976-03-18 | 1978-02-21 | Ncr Corporation | Semiconductor processing of silicon nitride |
| US4173683A (en) * | 1977-06-13 | 1979-11-06 | Rca Corporation | Chemically treating the overcoat of a semiconductor device |
| US4164422A (en) * | 1977-09-19 | 1979-08-14 | Napp Systems (Usa), Inc. | Water developable, photopolymer printing plates having ink-repulsive non-image areas |
| JPS54158883U (enExample) * | 1978-04-28 | 1979-11-06 | ||
| US4615962A (en) * | 1979-06-25 | 1986-10-07 | University Patents, Inc. | Diacetylenes having liquid crystal phases |
| US4439514A (en) * | 1979-06-25 | 1984-03-27 | University Patents, Inc. | Photoresistive compositions |
| US4581315A (en) * | 1979-06-25 | 1986-04-08 | University Patents, Inc. | Photoresistive compositions |
| US4330604A (en) * | 1980-08-04 | 1982-05-18 | Hughes Aircraft Company | Fabrication of holograms on plastic substrates |
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| US4352839A (en) * | 1981-05-26 | 1982-10-05 | General Electric Company | Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide |
| US4524126A (en) * | 1981-06-30 | 1985-06-18 | International Business Machines Corporation | Adhesion of a photoresist to a substrate |
| DE3305923C2 (de) * | 1983-02-21 | 1986-10-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Vorbacken von mit Positiv-Fotolack auf der Basis von Naphtoquinondiazid und Phenolformaldehydharz beschichteten Substraten |
| US4497890A (en) * | 1983-04-08 | 1985-02-05 | Motorola, Inc. | Process for improving adhesion of resist to gold |
| EP0204631A3 (en) * | 1985-06-04 | 1987-05-20 | Fairchild Semiconductor Corporation | Semiconductor structures having polysiloxane leveling film |
| JPH0618885B2 (ja) * | 1986-02-12 | 1994-03-16 | 東燃株式会社 | ポリシロキサザンおよびその製法 |
| US5166104A (en) * | 1986-02-12 | 1992-11-24 | Toa Nenryo Kogyo Kabushiki Kaisha | Polysiloxazanes, silicon oxynitride fibers and processes for producing same |
| JPS62297367A (ja) * | 1986-06-17 | 1987-12-24 | Shin Etsu Chem Co Ltd | プライマ−組成物 |
| US4770974A (en) * | 1986-09-18 | 1988-09-13 | International Business Machines Corporation | Microlithographic resist containing poly(1,1-dialkylsilazane) |
| JPS6377052A (ja) * | 1986-09-18 | 1988-04-07 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | レジスト組成物 |
| JPH0258062A (ja) * | 1988-08-24 | 1990-02-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4976817A (en) * | 1988-12-09 | 1990-12-11 | Morton International, Inc. | Wet lamination process and apparatus |
| JPH0791528B2 (ja) * | 1991-06-12 | 1995-10-04 | 信越化学工業株式会社 | シリコーンゴム用プライマー組成物 |
| US5262273A (en) * | 1992-02-25 | 1993-11-16 | International Business Machines Corporation | Photosensitive reactive ion etch barrier |
| US5270151A (en) * | 1992-03-17 | 1993-12-14 | International Business Machines Corporation | Spin on oxygen reactive ion etch barrier |
| US5215861A (en) * | 1992-03-17 | 1993-06-01 | International Business Machines Corporation | Thermographic reversible photoresist |
| US5920037A (en) | 1997-05-12 | 1999-07-06 | International Business Machines Corporation | Conductive bonding design for metal backed circuits |
| US6613184B1 (en) | 1997-05-12 | 2003-09-02 | International Business Machines Corporation | Stable interfaces between electrically conductive adhesives and metals |
| US6534724B1 (en) | 1997-05-28 | 2003-03-18 | International Business Machines Corporation | Enhanced design and process for a conductive adhesive |
| JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
| US6455443B1 (en) * | 2001-02-21 | 2002-09-24 | International Business Machines Corporation | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
| US6534184B2 (en) * | 2001-02-26 | 2003-03-18 | Kion Corporation | Polysilazane/polysiloxane block copolymers |
| WO2006129773A1 (ja) * | 2005-05-31 | 2006-12-07 | Toho Catalyst Co., Ltd. | アミノシラン化合物、オレフィン類重合用触媒成分および触媒並びにこれを用いたオレフィン類重合体の製造方法 |
| JP5136791B2 (ja) * | 2008-11-21 | 2013-02-06 | 信越化学工業株式会社 | シアノアクリレート系瞬間接着剤用プライマー組成物 |
| KR102139092B1 (ko) | 2012-09-24 | 2020-07-29 | 닛산 가가쿠 가부시키가이샤 | 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3549368A (en) * | 1968-07-02 | 1970-12-22 | Ibm | Process for improving photoresist adhesion |
| US3726943A (en) * | 1971-08-12 | 1973-04-10 | Union Carbide Corp | Ethylenically unsaturated monomer polymerization with silyl acyl peroxides and acyl peroxy polysiloxanes |
-
1972
- 1972-07-31 FR FR7227581A patent/FR2193864B1/fr not_active Expired
-
1973
- 1973-05-07 FR FR7316286A patent/FR2228828B2/fr not_active Expired
- 1973-07-23 NL NL7310238A patent/NL7310238A/xx unknown
- 1973-07-27 JP JP48084222A patent/JPS5130890B2/ja not_active Expired
- 1973-07-30 SE SE7310501A patent/SE383689B/xx unknown
- 1973-07-30 CA CA177,571A patent/CA1016017A/en not_active Expired
- 1973-07-30 US US383507A patent/US3911169A/en not_active Expired - Lifetime
- 1973-07-30 GB GB3624573A patent/GB1440979A/en not_active Expired
- 1973-07-30 BE BE134041A patent/BE802994A/xx unknown
- 1973-07-30 IL IL42845A patent/IL42845A/xx unknown
- 1973-07-30 CH CH1106973A patent/CH588306A5/xx not_active IP Right Cessation
- 1973-07-31 IT IT27352/73A patent/IT991478B/it active
- 1973-07-31 DE DE19732338839 patent/DE2338839A1/de active Pending
- 1973-07-31 ES ES417423A patent/ES417423A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4953629A (enExample) | 1974-05-24 |
| US3911169A (en) | 1975-10-07 |
| ES417423A1 (es) | 1976-06-16 |
| IT991478B (it) | 1975-07-30 |
| FR2193864B1 (enExample) | 1974-12-27 |
| IL42845A0 (en) | 1973-10-25 |
| JPS5130890B2 (enExample) | 1976-09-03 |
| GB1440979A (en) | 1976-06-30 |
| BE802994A (fr) | 1974-01-30 |
| NL7310238A (enExample) | 1974-02-04 |
| FR2228828B2 (enExample) | 1975-11-21 |
| CH588306A5 (enExample) | 1977-05-31 |
| FR2228828A2 (enExample) | 1974-12-06 |
| DE2338839A1 (de) | 1974-02-21 |
| IL42845A (en) | 1975-12-31 |
| FR2193864A1 (enExample) | 1974-02-22 |
| SE383689B (sv) | 1976-03-29 |
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