JPS4953629A - - Google Patents
Info
- Publication number
- JPS4953629A JPS4953629A JP48084222A JP8422273A JPS4953629A JP S4953629 A JPS4953629 A JP S4953629A JP 48084222 A JP48084222 A JP 48084222A JP 8422273 A JP8422273 A JP 8422273A JP S4953629 A JPS4953629 A JP S4953629A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Laminated Bodies (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Printing Plates And Materials Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7227581A FR2193864B1 (ja) | 1972-07-31 | 1972-07-31 | |
| FR7316286A FR2228828B2 (ja) | 1972-07-31 | 1973-05-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4953629A true JPS4953629A (ja) | 1974-05-24 |
| JPS5130890B2 JPS5130890B2 (ja) | 1976-09-03 |
Family
ID=26217249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48084222A Expired JPS5130890B2 (ja) | 1972-07-31 | 1973-07-27 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3911169A (ja) |
| JP (1) | JPS5130890B2 (ja) |
| BE (1) | BE802994A (ja) |
| CA (1) | CA1016017A (ja) |
| CH (1) | CH588306A5 (ja) |
| DE (1) | DE2338839A1 (ja) |
| ES (1) | ES417423A1 (ja) |
| FR (2) | FR2193864B1 (ja) |
| GB (1) | GB1440979A (ja) |
| IL (1) | IL42845A (ja) |
| IT (1) | IT991478B (ja) |
| NL (1) | NL7310238A (ja) |
| SE (1) | SE383689B (ja) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5152002A (en) * | 1974-08-29 | 1976-05-08 | Hoechst Ag | Oo nafutokinonjiajidojudotaide purisenshitaizushitainsatsuban |
| JPS5763529A (en) * | 1980-08-04 | 1982-04-17 | Hughes Aircraft Co | Preholograph element and method of producing hologram |
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| JPS62297367A (ja) * | 1986-06-17 | 1987-12-24 | Shin Etsu Chem Co Ltd | プライマ−組成物 |
| JPH0258062A (ja) * | 1988-08-24 | 1990-02-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH04366172A (ja) * | 1991-06-12 | 1992-12-18 | Shin Etsu Chem Co Ltd | シリコーンゴム用プライマー組成物 |
| JP2010121077A (ja) * | 2008-11-21 | 2010-06-03 | Shin-Etsu Chemical Co Ltd | シアノアクリレート系瞬間接着剤用プライマー組成物 |
| WO2014046055A1 (ja) * | 2012-09-24 | 2014-03-27 | 日産化学工業株式会社 | ヘテロ原子を有する環状有機基含有シリコン含有レジスト下層膜形成組成物 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103045A (en) * | 1972-07-31 | 1978-07-25 | Rhone-Poulenc, S.A. | Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides |
| JPS53292B2 (ja) * | 1974-02-01 | 1978-01-07 | ||
| US3951659A (en) * | 1974-12-09 | 1976-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for resist coating of a glass substrate |
| JPS5217815A (en) * | 1975-07-30 | 1977-02-10 | Fuji Photo Film Co Ltd | Substrate and material using the same |
| US4075367A (en) * | 1976-03-18 | 1978-02-21 | Ncr Corporation | Semiconductor processing of silicon nitride |
| US4173683A (en) * | 1977-06-13 | 1979-11-06 | Rca Corporation | Chemically treating the overcoat of a semiconductor device |
| US4164422A (en) * | 1977-09-19 | 1979-08-14 | Napp Systems (Usa), Inc. | Water developable, photopolymer printing plates having ink-repulsive non-image areas |
| JPS54158883U (ja) * | 1978-04-28 | 1979-11-06 | ||
| US4581315A (en) * | 1979-06-25 | 1986-04-08 | University Patents, Inc. | Photoresistive compositions |
| US4615962A (en) * | 1979-06-25 | 1986-10-07 | University Patents, Inc. | Diacetylenes having liquid crystal phases |
| US4439514A (en) * | 1979-06-25 | 1984-03-27 | University Patents, Inc. | Photoresistive compositions |
| US4352839A (en) * | 1981-05-26 | 1982-10-05 | General Electric Company | Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide |
| US4524126A (en) * | 1981-06-30 | 1985-06-18 | International Business Machines Corporation | Adhesion of a photoresist to a substrate |
| DE3305923C2 (de) * | 1983-02-21 | 1986-10-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Vorbacken von mit Positiv-Fotolack auf der Basis von Naphtoquinondiazid und Phenolformaldehydharz beschichteten Substraten |
| US4497890A (en) * | 1983-04-08 | 1985-02-05 | Motorola, Inc. | Process for improving adhesion of resist to gold |
| EP0204631A3 (en) * | 1985-06-04 | 1987-05-20 | Fairchild Semiconductor Corporation | Semiconductor structures having polysiloxane leveling film |
| JPH0618885B2 (ja) * | 1986-02-12 | 1994-03-16 | 東燃株式会社 | ポリシロキサザンおよびその製法 |
| US5166104A (en) * | 1986-02-12 | 1992-11-24 | Toa Nenryo Kogyo Kabushiki Kaisha | Polysiloxazanes, silicon oxynitride fibers and processes for producing same |
| US4770974A (en) * | 1986-09-18 | 1988-09-13 | International Business Machines Corporation | Microlithographic resist containing poly(1,1-dialkylsilazane) |
| JPS6377052A (ja) * | 1986-09-18 | 1988-04-07 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | レジスト組成物 |
| US4976817A (en) * | 1988-12-09 | 1990-12-11 | Morton International, Inc. | Wet lamination process and apparatus |
| US5262273A (en) * | 1992-02-25 | 1993-11-16 | International Business Machines Corporation | Photosensitive reactive ion etch barrier |
| US5215861A (en) * | 1992-03-17 | 1993-06-01 | International Business Machines Corporation | Thermographic reversible photoresist |
| US5270151A (en) * | 1992-03-17 | 1993-12-14 | International Business Machines Corporation | Spin on oxygen reactive ion etch barrier |
| US5920037A (en) * | 1997-05-12 | 1999-07-06 | International Business Machines Corporation | Conductive bonding design for metal backed circuits |
| US6613184B1 (en) | 1997-05-12 | 2003-09-02 | International Business Machines Corporation | Stable interfaces between electrically conductive adhesives and metals |
| US6534724B1 (en) * | 1997-05-28 | 2003-03-18 | International Business Machines Corporation | Enhanced design and process for a conductive adhesive |
| JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
| US6455443B1 (en) * | 2001-02-21 | 2002-09-24 | International Business Machines Corporation | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
| US6534184B2 (en) * | 2001-02-26 | 2003-03-18 | Kion Corporation | Polysilazane/polysiloxane block copolymers |
| KR101234427B1 (ko) * | 2005-05-31 | 2013-02-18 | 도호 티타늄 가부시키가이샤 | 아미노실란 화합물, 올레핀류 중합용 촉매 성분 및 촉매 및이것을 이용한 올레핀류 중합체의 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3549368A (en) * | 1968-07-02 | 1970-12-22 | Ibm | Process for improving photoresist adhesion |
| US3726943A (en) * | 1971-08-12 | 1973-04-10 | Union Carbide Corp | Ethylenically unsaturated monomer polymerization with silyl acyl peroxides and acyl peroxy polysiloxanes |
-
1972
- 1972-07-31 FR FR7227581A patent/FR2193864B1/fr not_active Expired
-
1973
- 1973-05-07 FR FR7316286A patent/FR2228828B2/fr not_active Expired
- 1973-07-23 NL NL7310238A patent/NL7310238A/xx unknown
- 1973-07-27 JP JP48084222A patent/JPS5130890B2/ja not_active Expired
- 1973-07-30 GB GB3624573A patent/GB1440979A/en not_active Expired
- 1973-07-30 US US383507A patent/US3911169A/en not_active Expired - Lifetime
- 1973-07-30 IL IL42845A patent/IL42845A/xx unknown
- 1973-07-30 CH CH1106973A patent/CH588306A5/xx not_active IP Right Cessation
- 1973-07-30 BE BE134041A patent/BE802994A/xx unknown
- 1973-07-30 SE SE7310501A patent/SE383689B/xx unknown
- 1973-07-30 CA CA177,571A patent/CA1016017A/en not_active Expired
- 1973-07-31 DE DE19732338839 patent/DE2338839A1/de active Pending
- 1973-07-31 IT IT27352/73A patent/IT991478B/it active
- 1973-07-31 ES ES417423A patent/ES417423A1/es not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5152002A (en) * | 1974-08-29 | 1976-05-08 | Hoechst Ag | Oo nafutokinonjiajidojudotaide purisenshitaizushitainsatsuban |
| JPS5763529A (en) * | 1980-08-04 | 1982-04-17 | Hughes Aircraft Co | Preholograph element and method of producing hologram |
| JPH0248904B2 (ja) * | 1980-08-04 | 1990-10-26 | Hughes Aircraft Co | |
| JPS5768834A (en) * | 1980-10-17 | 1982-04-27 | Matsushita Electric Ind Co Ltd | Photographic etching method |
| JPS62297367A (ja) * | 1986-06-17 | 1987-12-24 | Shin Etsu Chem Co Ltd | プライマ−組成物 |
| JPH0133508B2 (ja) * | 1986-06-17 | 1989-07-13 | Shinetsu Chem Ind Co | |
| JPH0258062A (ja) * | 1988-08-24 | 1990-02-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH04366172A (ja) * | 1991-06-12 | 1992-12-18 | Shin Etsu Chem Co Ltd | シリコーンゴム用プライマー組成物 |
| JP2010121077A (ja) * | 2008-11-21 | 2010-06-03 | Shin-Etsu Chemical Co Ltd | シアノアクリレート系瞬間接着剤用プライマー組成物 |
| WO2014046055A1 (ja) * | 2012-09-24 | 2014-03-27 | 日産化学工業株式会社 | ヘテロ原子を有する環状有機基含有シリコン含有レジスト下層膜形成組成物 |
| US10079146B2 (en) | 2012-09-24 | 2018-09-18 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2193864B1 (ja) | 1974-12-27 |
| CA1016017A (en) | 1977-08-23 |
| BE802994A (fr) | 1974-01-30 |
| IT991478B (it) | 1975-07-30 |
| ES417423A1 (es) | 1976-06-16 |
| SE383689B (sv) | 1976-03-29 |
| GB1440979A (en) | 1976-06-30 |
| FR2228828B2 (ja) | 1975-11-21 |
| FR2228828A2 (ja) | 1974-12-06 |
| NL7310238A (ja) | 1974-02-04 |
| JPS5130890B2 (ja) | 1976-09-03 |
| CH588306A5 (ja) | 1977-05-31 |
| FR2193864A1 (ja) | 1974-02-22 |
| DE2338839A1 (de) | 1974-02-21 |
| IL42845A (en) | 1975-12-31 |
| US3911169A (en) | 1975-10-07 |
| IL42845A0 (en) | 1973-10-25 |