JPH11512232A - 低質量サセプタ - Google Patents

低質量サセプタ

Info

Publication number
JPH11512232A
JPH11512232A JP9510427A JP51042797A JPH11512232A JP H11512232 A JPH11512232 A JP H11512232A JP 9510427 A JP9510427 A JP 9510427A JP 51042797 A JP51042797 A JP 51042797A JP H11512232 A JPH11512232 A JP H11512232A
Authority
JP
Japan
Prior art keywords
susceptor
wafer
low mass
heat capacity
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9510427A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11512232A5 (enExample
Inventor
デリック ダブリュー． フォスター
ダー ジュード コーネリアス エー． ヴァン
ジョン エフ． ウェンガート
Original Assignee
アドバンスト セミコンダクタ マテリアルズ アメリカ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アドバンスト セミコンダクタ マテリアルズ アメリカ インコーポレイテッド filed Critical アドバンスト セミコンダクタ マテリアルズ アメリカ インコーポレイテッド
Publication of JPH11512232A publication Critical patent/JPH11512232A/ja
Publication of JPH11512232A5 publication Critical patent/JPH11512232A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP9510427A 1995-08-22 1996-08-22 低質量サセプタ Pending JPH11512232A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US263295P 1995-08-22 1995-08-22
US60/002,632 1995-08-22
US08/621,627 US6086680A (en) 1995-08-22 1996-03-26 Low-mass susceptor
US08/621,627 1996-03-26
PCT/US1996/013575 WO1997008743A1 (en) 1995-08-22 1996-08-22 Low mass susceptor

Publications (2)

Publication Number Publication Date
JPH11512232A true JPH11512232A (ja) 1999-10-19
JPH11512232A5 JPH11512232A5 (enExample) 2004-09-09

Family

ID=26670648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9510427A Pending JPH11512232A (ja) 1995-08-22 1996-08-22 低質量サセプタ

Country Status (5)

Country Link
US (1) US6086680A (enExample)
EP (1) EP0846335A1 (enExample)
JP (1) JPH11512232A (enExample)
KR (1) KR100444756B1 (enExample)
WO (1) WO1997008743A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004503084A (ja) * 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 表面削剥領域を有するエピタキシャルシリコンウェーハを形成するための方法および装置
JP2008546203A (ja) * 2005-06-01 2008-12-18 マットソン テクノロジー インコーポレイテッド パルス化された加熱処理の間に熱収支を最適化する方法
JP2009027164A (ja) * 2007-07-17 2009-02-05 Asm Internatl Nv 半導体プロセス設備用の部品の穴を内張りする保護用の挿入部材
JP2009267017A (ja) * 2008-04-24 2009-11-12 Sumitomo Electric Ind Ltd 気相成長装置および半導体基板の製造方法
JP2016184734A (ja) * 2015-03-25 2016-10-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長装置用のチャンバ構成要素
JP2020080365A (ja) * 2018-11-13 2020-05-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ウェハーステージ、半導体製造装置、ウェハーステージの製造方法
JP2023510152A (ja) * 2019-12-27 2023-03-13 アプライド マテリアルズ インコーポレイテッド 目標を定めた熱制御システム

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000061498A2 (en) 1999-04-13 2000-10-19 Semitool, Inc. System for electrochemically processing a workpiece
AT411304B (de) * 1997-06-18 2003-11-25 Sez Ag Träger für scheibenförmige gegenstände, insbesondere silizium-wafer
EP1308989A3 (en) * 1997-11-03 2007-12-26 ASM America, Inc. Improved low mass wafer support system
DE69838484T2 (de) * 1997-11-03 2008-06-26 Asm America Inc., Phoenix Hochtemperatur-prozesskammer mit langer lebensdauer
KR100551980B1 (ko) * 1997-11-03 2006-02-20 에이에스엠 아메리카, 인코포레이티드 저질량 지지체를 이용한 웨이퍼의 처리방법 및 장치
KR100660416B1 (ko) * 1997-11-03 2006-12-22 에이에스엠 아메리카, 인코포레이티드 개량된 저질량 웨이퍼 지지 시스템
US7244677B2 (en) * 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6497801B1 (en) 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
JP2000058470A (ja) * 1998-08-07 2000-02-25 Ushio Inc 光照射式加熱装置のガードリング
JP3076791B2 (ja) * 1998-10-19 2000-08-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US7351315B2 (en) 2003-12-05 2008-04-01 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US7585398B2 (en) 1999-04-13 2009-09-08 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US7438788B2 (en) 1999-04-13 2008-10-21 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7189318B2 (en) 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6916412B2 (en) 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
US7264698B2 (en) 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7351314B2 (en) 2003-12-05 2008-04-01 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US7020537B2 (en) 1999-04-13 2006-03-28 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US20020062792A1 (en) * 1999-07-14 2002-05-30 Seh America, Inc. Wafer support device and reactor system for epitaxial layer growth
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6375749B1 (en) 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6471913B1 (en) 2000-02-09 2002-10-29 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature
US6780374B2 (en) 2000-12-08 2004-08-24 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece at an elevated temperature
WO2002004887A1 (en) 2000-07-08 2002-01-17 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
JP2002231649A (ja) * 2001-01-30 2002-08-16 Tokyo Electron Ltd 加熱処理装置とウェーハ支持リング
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US6510888B1 (en) 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
WO2003018874A2 (en) 2001-08-31 2003-03-06 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
US7022192B2 (en) * 2002-09-04 2006-04-04 Tokyo Electron Limited Semiconductor wafer susceptor
JP4348542B2 (ja) * 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
TWI327761B (en) * 2005-10-07 2010-07-21 Rohm & Haas Elect Mat Method for making semiconductor wafer and wafer holding article
EP1793021A3 (en) * 2005-12-02 2009-01-14 Rohm and Haas Electronic Materials LLC Method for semiconductor processing using silicon carbide article
US20080314319A1 (en) * 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
US20110114022A1 (en) * 2007-12-12 2011-05-19 Veeco Instruments Inc. Wafer carrier with hub
US20090165721A1 (en) * 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
US8404049B2 (en) * 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
US20100098519A1 (en) * 2008-10-17 2010-04-22 Memc Electronic Materials, Inc. Support for a semiconductor wafer in a high temperature environment
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
DE102011007682A1 (de) * 2011-04-19 2012-10-25 Siltronic Ag Suszeptor zum Abstützen einer Halbleiterscheibe und Verfahren zum Abscheiden einer Schicht auf einer Vorderseite einer Halbleiterscheibe
NL2008751A (en) 2011-06-06 2012-12-10 Asml Netherlands Bv Temperature sensing probe, burl plate, lithographic apparatus and method.
US11085112B2 (en) 2011-10-28 2021-08-10 Asm Ip Holding B.V. Susceptor with ring to limit backside deposition
TW201437421A (zh) * 2013-02-20 2014-10-01 Applied Materials Inc 用於旋轉料架原子層沉積之裝置以及方法
US10068791B2 (en) 2013-03-08 2018-09-04 Semiconductor Components Industries, Llc Wafer susceptor for forming a semiconductor device and method therefor
CN106030761B (zh) 2014-01-27 2019-09-13 威科仪器有限公司 用于化学气相沉积系统的晶片载体及其制造方法
US20170029948A1 (en) * 2015-07-28 2017-02-02 Asm Ip Holding B.V. Methods and apparatuses for temperature-indexed thin film deposition
US11421321B2 (en) 2015-07-28 2022-08-23 Asm Ip Holding B.V. Apparatuses for thin film deposition
US10204790B2 (en) 2015-07-28 2019-02-12 Asm Ip Holding B.V. Methods for thin film deposition
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
TWI839443B (zh) 2019-01-17 2024-04-21 荷蘭商 Ａｓｍ Ｉｐ 私人控股有限公司 通風基座
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
TWI845682B (zh) 2019-05-22 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 工件基座主體
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
TWI861334B (zh) 2020-01-21 2024-11-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於均勻沉積之具有側壁隆起的基座及處理結晶基材之方法
TWI888578B (zh) 2020-06-23 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座及反應腔室
TWI889919B (zh) 2020-10-21 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於可流動間隙填充之方法及裝置
USD1031676S1 (en) 2020-12-04 2024-06-18 Asm Ip Holding B.V. Combined susceptor, support, and lift system
WO2022240593A1 (en) * 2021-05-12 2022-11-17 Applied Materials, Inc. Low mass substrate support
US12497697B2 (en) * 2021-10-08 2025-12-16 Applied Materials, Inc. Layer with discrete islands formed on a substrate support

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3407783A (en) * 1964-08-31 1968-10-29 Emil R. Capita Vapor deposition apparatus
US3549847A (en) * 1967-04-18 1970-12-22 Gen Electric Graphite susceptor
JPS4930319B1 (enExample) * 1969-08-29 1974-08-12
US4522149A (en) * 1983-11-21 1985-06-11 General Instrument Corp. Reactor and susceptor for chemical vapor deposition process
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPS6169116A (ja) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター
NL8602356A (nl) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership Inrichting en werkwijze voor een axiaal symmetrische reactor voor het chemische uit damp neerslaan.
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPS63186422A (ja) * 1987-01-28 1988-08-02 Tadahiro Omi ウエハサセプタ装置
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
KR0155545B1 (ko) * 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
US5306699A (en) * 1988-08-31 1994-04-26 Superconductor Technologies, Inc. Reactor vessel for manufacture of superconducting films
JP2731855B2 (ja) * 1989-02-14 1998-03-25 アネルバ株式会社 減圧気相成長装置
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
EP0448346B1 (en) * 1990-03-19 1997-07-09 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus
US5098198A (en) * 1990-04-19 1992-03-24 Applied Materials, Inc. Wafer heating and monitor module and method of operation
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5121531A (en) * 1990-07-06 1992-06-16 Applied Materials, Inc. Refractory susceptors for epitaxial deposition apparatus
US5298465A (en) * 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5356486A (en) * 1991-03-04 1994-10-18 Applied Materials, Inc. Combined wafer support and temperature monitoring device
US5199483A (en) * 1991-05-15 1993-04-06 Applied Materials, Inc. Method and apparatus for cooling wafers
US5393349A (en) * 1991-08-16 1995-02-28 Tokyo Electron Sagami Kabushiki Kaisha Semiconductor wafer processing apparatus
US5332442A (en) * 1991-11-15 1994-07-26 Tokyo Electron Kabushiki Kaisha Surface processing apparatus
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5308645A (en) * 1992-08-07 1994-05-03 Delco Electronics Corporation Method and apparatus for through hole substrate printing
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5343938A (en) * 1992-12-24 1994-09-06 Vlsi Technology, Inc. Method and apparatus for thermally insulating a wafer support
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
DE59406900D1 (de) * 1993-02-08 1998-10-22 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige Gegenstände
NL9300389A (nl) * 1993-03-04 1994-10-03 Xycarb Bv Substraatdrager.
US5738165A (en) * 1993-05-07 1998-04-14 Nikon Corporation Substrate holding apparatus
JPH0711446A (ja) * 1993-05-27 1995-01-13 Applied Materials Inc 気相成長用サセプタ装置
DE69404397T2 (de) * 1993-07-13 1997-11-13 Applied Materials Inc Verbesserte Suszeptor Ausführung
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5467220A (en) * 1994-02-18 1995-11-14 Applied Materials, Inc. Method and apparatus for improving semiconductor wafer surface temperature uniformity
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
EP0669640A1 (en) * 1994-02-25 1995-08-30 Applied Materials, Inc. Susceptor for deposition apparatus
US5514439A (en) * 1994-10-14 1996-05-07 Sibley; Thomas Wafer support fixtures for rapid thermal processing
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
US5656093A (en) * 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004503084A (ja) * 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 表面削剥領域を有するエピタキシャルシリコンウェーハを形成するための方法および装置
JP2008546203A (ja) * 2005-06-01 2008-12-18 マットソン テクノロジー インコーポレイテッド パルス化された加熱処理の間に熱収支を最適化する方法
JP2009027164A (ja) * 2007-07-17 2009-02-05 Asm Internatl Nv 半導体プロセス設備用の部品の穴を内張りする保護用の挿入部材
JP2009267017A (ja) * 2008-04-24 2009-11-12 Sumitomo Electric Ind Ltd 気相成長装置および半導体基板の製造方法
JP2016184734A (ja) * 2015-03-25 2016-10-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長装置用のチャンバ構成要素
JP2020080365A (ja) * 2018-11-13 2020-05-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ウェハーステージ、半導体製造装置、ウェハーステージの製造方法
JP2023510152A (ja) * 2019-12-27 2023-03-13 アプライド マテリアルズ インコーポレイテッド 目標を定めた熱制御システム

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US6086680A (en) 2000-07-11
EP0846335A1 (en) 1998-06-10
KR19990044054A (ko) 1999-06-25
KR100444756B1 (ko) 2004-11-11
WO1997008743A1 (en) 1997-03-06

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