JPH1140824A5 - - Google Patents

Info

Publication number
JPH1140824A5
JPH1140824A5 JP1998122633A JP12263398A JPH1140824A5 JP H1140824 A5 JPH1140824 A5 JP H1140824A5 JP 1998122633 A JP1998122633 A JP 1998122633A JP 12263398 A JP12263398 A JP 12263398A JP H1140824 A5 JPH1140824 A5 JP H1140824A5
Authority
JP
Japan
Prior art keywords
substrate
shows
layer
bolometer
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998122633A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1140824A (ja
Filing date
Publication date
Priority claimed from EP97870044A external-priority patent/EP0867701A1/en
Application filed filed Critical
Publication of JPH1140824A publication Critical patent/JPH1140824A/ja
Publication of JPH1140824A5 publication Critical patent/JPH1140824A5/ja
Pending legal-status Critical Current

Links

JP10122633A 1997-03-28 1998-03-27 赤外線輻射検出器、特に赤外線検出ボロメータ、の製造法 Pending JPH1140824A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE97870044-1 1997-03-28
EP97870044A EP0867701A1 (en) 1997-03-28 1997-03-28 Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007029141A Division JP2007165927A (ja) 1997-03-28 2007-02-08 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法

Publications (2)

Publication Number Publication Date
JPH1140824A JPH1140824A (ja) 1999-02-12
JPH1140824A5 true JPH1140824A5 (OSRAM) 2006-11-02

Family

ID=8230989

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10122633A Pending JPH1140824A (ja) 1997-03-28 1998-03-27 赤外線輻射検出器、特に赤外線検出ボロメータ、の製造法
JP2007029141A Pending JP2007165927A (ja) 1997-03-28 2007-02-08 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007029141A Pending JP2007165927A (ja) 1997-03-28 2007-02-08 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法

Country Status (4)

Country Link
US (5) US6194722B1 (OSRAM)
EP (3) EP0867701A1 (OSRAM)
JP (2) JPH1140824A (OSRAM)
DE (1) DE69811968T2 (OSRAM)

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1136440A1 (en) * 2000-03-24 2001-09-26 Interuniversitair Micro-Elektronica Centrum Vzw Method of improving mechanical strenghtin micro electro mechanical systems and devices produced thereof
US7176111B2 (en) 1997-03-28 2007-02-13 Interuniversitair Microelektronica Centrum (Imec) Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
EP1016129B2 (en) * 1997-06-24 2009-06-10 Massachusetts Institute Of Technology Controlling threading dislocation densities using graded layers and planarization
US7227176B2 (en) * 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
CN1118103C (zh) * 1998-10-21 2003-08-13 李韫言 微细加工热辐射红外传感器
WO2000042231A2 (en) * 1999-01-15 2000-07-20 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems
JP2001153720A (ja) * 1999-11-30 2001-06-08 Nec Corp 熱型赤外線検出器
CN1217417C (zh) * 1999-12-10 2005-08-31 株式会社半导体能源研究所 半导体器件及其制造方法
JP2001264441A (ja) * 2000-01-14 2001-09-26 Seiko Instruments Inc カロリーメーターとその製造方法
US6750130B1 (en) 2000-01-20 2004-06-15 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
US6503773B2 (en) * 2000-01-20 2003-01-07 Amberwave Systems Corporation Low threading dislocation density relaxed mismatched epilayers without high temperature growth
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
AU2001262915A1 (en) * 2000-02-24 2001-09-03 University Of Virginia Patent Foundation High sensitivity infrared sensing apparatus and related method thereof
EP1251099A3 (en) * 2000-03-24 2004-07-21 Interuniversitair Microelektronica Centrum Vzw Method of improving mechanical strength in micro electro mechanical systems and devices produced thereof
ATE440378T1 (de) * 2000-04-05 2009-09-15 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2004519090A (ja) * 2000-08-07 2004-06-24 アンバーウェーブ システムズ コーポレイション 歪み表面チャネル及び歪み埋め込みチャネルｍｏｓｆｅｔ素子のゲート技術
EP1309989B1 (en) * 2000-08-16 2007-01-10 Massachusetts Institute Of Technology Process for producing semiconductor article using graded expitaxial growth
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
DE10102993B4 (de) 2001-01-24 2009-01-08 Robert Bosch Gmbh Herstellungsverfahren für ein mikromechanisches Bauelement
US6703688B1 (en) * 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6489616B2 (en) * 2001-03-19 2002-12-03 The Board Of Governors Of Southwest Missouri State University Doped, organic carbon-containing sensor for infrared detection and a process for the preparation thereof
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
WO2002103760A2 (en) * 2001-06-14 2002-12-27 Amberware Systems Corporation Method of selective removal of sige alloys
FR2827707B1 (fr) * 2001-07-20 2003-11-21 Fr De Detecteurs Infrarouges S Procede de realisation d'un detecteur bolometrique et detecteur realise selon ce procede
EP1428262A2 (en) * 2001-09-21 2004-06-16 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2003028106A2 (en) 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US6780786B2 (en) * 2001-11-26 2004-08-24 The Regents Of The University Of California Method for producing a porous silicon film
AU2002352866A1 (en) * 2001-11-26 2003-06-10 Wisconsin Alumni Research Foundation Stress control of semiconductor microstructures for thin film growth
US6793389B2 (en) * 2002-02-04 2004-09-21 Delphi Technologies, Inc. Monolithically-integrated infrared sensor
AU2003222003A1 (en) 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
FI114658B (fi) 2002-06-03 2004-11-30 Metorex Internat Oy Suprajohtava antennikytketty kuumapistemikrobolometri, menetelmät sellaisen valmistamiseksi ja käyttämiseksi sekä bolometrinen kuvantamisjärjestely
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7615829B2 (en) * 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
AU2003247513A1 (en) * 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
EP2267762A3 (en) * 2002-08-23 2012-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor heterostructures having reduced dislocation pile-ups and related methods
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US7210653B2 (en) * 2002-10-22 2007-05-01 The Boeing Company Electric-based secondary power system architectures for aircraft
JP4659732B2 (ja) * 2003-01-27 2011-03-30 台湾積體電路製造股▲ふん▼有限公司 半導体層を形成する方法
EP1602125B1 (en) * 2003-03-07 2019-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation process
FR2864065B1 (fr) * 2003-12-22 2006-02-24 Univ Toulouse Utilisation de ferrites spinelles comme materiau sensible pour dispositifs bolometriques de detection de l'infrarouge.
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
KR100827314B1 (ko) * 2005-10-10 2008-05-06 삼성전기주식회사 열처리에 의해 평탄면을 가지는 멤스 소자 및 광변조기제조 방법
US20080085334A1 (en) * 2006-10-10 2008-04-10 Husky Injection Molding Systems Ltd. Hot Runner System Sensor
US20080185522A1 (en) * 2007-02-06 2008-08-07 Shih-Chia Chang Infrared sensors and methods for manufacturing the infrared sensors
US7795605B2 (en) * 2007-06-29 2010-09-14 International Business Machines Corporation Phase change material based temperature sensor
US7622717B2 (en) * 2007-08-22 2009-11-24 Drs Sensors & Targeting Systems, Inc. Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption
WO2009082840A1 (en) * 2007-12-27 2009-07-09 Applied Materials, Inc. Method for forming a polysilicon film
US20110121424A1 (en) * 2009-04-30 2011-05-26 James Carey Low oxygen content semiconductor material for surface enhanced photonic devices and associated methods
WO2010147839A2 (en) 2009-06-18 2010-12-23 Analog Devices, Inc. Silicon-rich nitride etch stop layer for vapor hf etching in mems device fabrication
US20110203648A1 (en) * 2009-08-20 2011-08-25 James Carey Laser processed heterojunction photovoltaic devices and associated methods
US8476598B1 (en) 2009-08-31 2013-07-02 Sionyx, Inc. Electromagnetic radiation imaging devices and associated methods
US8309389B1 (en) 2009-09-10 2012-11-13 Sionyx, Inc. Photovoltaic semiconductor devices and associated methods
US8657227B1 (en) 2009-09-11 2014-02-25 The Boeing Company Independent power generation in aircraft
WO2011035188A2 (en) * 2009-09-17 2011-03-24 Sionyx, Inc. Photosensitive imaging devices and associated methods
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US20110095387A1 (en) * 2009-10-22 2011-04-28 James Carey Semiconductor devices having an enhanced absorption region and associated methods
JP5644120B2 (ja) * 2010-01-26 2014-12-24 セイコーエプソン株式会社 熱型光検出器、熱型光検出装置、電子機器および熱型光検出器の製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN101832831B (zh) * 2010-04-22 2015-01-28 无锡市纳微电子有限公司 一种压阻传感器芯片及其制作方法
MD340Z (ro) * 2010-04-23 2011-09-30 Институт Электронной Инженерии И Промышленных Технологий Bolometru
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
US8738268B2 (en) 2011-03-10 2014-05-27 The Boeing Company Vehicle electrical power management and distribution
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US9151597B2 (en) 2012-02-13 2015-10-06 First Solar, Inc. In situ substrate detection for a processing system using infrared detection
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
DE102014112672B4 (de) 2014-09-03 2018-05-09 Snaptrack, Inc. Abdeckung für ein Bauelement und Verfahren zur Herstellung einer Abdeckung für ein Bauelement
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
CN104614086B (zh) * 2015-03-06 2017-05-03 上海新微技术研发中心有限公司 气压式温度传感器及其制作方法
US9915567B2 (en) * 2016-06-28 2018-03-13 Excelitas Technologies Singapore Pte. Ltd. Unreleased thermopile infrared sensor using material transfer method
CN106653940B (zh) * 2016-11-21 2018-06-01 深圳信息职业技术学院 张应变锗msm光电探测器及其制备方法
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
TWI646672B (zh) 2017-12-01 2019-01-01 財團法人工業技術研究院 紅外線感測元件及其製造方法
US10490689B1 (en) 2018-01-31 2019-11-26 Hrl Laboratories, Llc Grain boundary passivation of polycrystalline materials
US10424608B1 (en) 2018-01-31 2019-09-24 Hrl Laboratories, Llc Fabrication of polycrystalline semiconductor infrared detector
WO2019195441A1 (en) 2018-04-04 2019-10-10 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
CN113015889B (zh) * 2019-02-28 2024-04-02 松下知识产权经营株式会社 红外线传感器、红外线传感器阵列及红外线传感器的制造方法
WO2020256819A2 (en) 2019-06-18 2020-12-24 The Research Foundation For The State University Of New York Fabricating photonics structure conductive pathways
JP7309138B2 (ja) * 2020-12-25 2023-07-18 国立大学法人横浜国立大学 赤外線吸収体および赤外線吸収体を備えるガスセンサ
TWI825710B (zh) 2022-05-10 2023-12-11 財團法人工業技術研究院 紅外線元件及其製造方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239312A (en) * 1978-11-29 1980-12-16 Hughes Aircraft Company Parallel interconnect for planar arrays
US5220188A (en) 1983-07-06 1993-06-15 Honeywell Inc. Integrated micromechanical sensor element
US5220189A (en) 1983-07-06 1993-06-15 Honeywell Inc. Micromechanical thermoelectric sensor element
JPH0664906B2 (ja) * 1984-11-30 1994-08-22 キヤノン株式会社 固体メモリ−
US5300915A (en) * 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
US4902894A (en) * 1986-09-26 1990-02-20 Honeywell Inc. Gate coupled input circuit
JPS63121851A (ja) * 1986-11-11 1988-05-25 Canon Inc 電子写真用光受容部材
US5010251A (en) * 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
US5021663B1 (en) * 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
US5286976A (en) 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
WO1991016607A1 (en) 1990-04-26 1991-10-31 Commonwealth Of Australia, The Secretary Department Of Defence Semiconductor film bolometer thermal infrared detector
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5260225A (en) * 1991-12-20 1993-11-09 Honeywell Inc. Integrated infrared sensitive bolometers
US5291055A (en) * 1992-01-28 1994-03-01 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Resonant infrared detector with substantially unit quantum efficiency
US5357803A (en) * 1992-04-08 1994-10-25 Rochester Institute Of Technology Micromachined microaccelerometer for measuring acceleration along three axes
US5241193A (en) 1992-05-19 1993-08-31 Motorola, Inc. Semiconductor device having a thin-film transistor and process
WO1993026050A1 (en) 1992-06-11 1993-12-23 Honeywell Inc. Two-level microbridge bolometer imaging array and method of making same
US5444302A (en) * 1992-12-25 1995-08-22 Hitachi, Ltd. Semiconductor device including multi-layer conductive thin film of polycrystalline material
US5371035A (en) * 1993-02-01 1994-12-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit device
WO1994018697A1 (en) * 1993-02-04 1994-08-18 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US5396280A (en) * 1993-02-26 1995-03-07 International Business Machines, Corporation Analog video processing apparatus and method for eliminating background levels in the analog signal
US5426070A (en) * 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5399897A (en) 1993-11-29 1995-03-21 Raytheon Company Microstructure and method of making such structure
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
JP2615429B2 (ja) * 1994-09-13 1997-05-28 工業技術院長 ３次元立体形状の創成法
EP0799495A4 (en) * 1994-11-10 1999-11-03 Lawrence Semiconductor Researc Silicon-germanium-carbon compositions and processes thereof
JP2674545B2 (ja) * 1995-01-20 1997-11-12 日本電気株式会社 赤外線検出器及びその駆動方法
JPH08261832A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 赤外線センサ及びその製造方法
JP3287173B2 (ja) * 1995-04-07 2002-05-27 三菱電機株式会社 赤外線検出素子
JPH08335707A (ja) * 1995-06-08 1996-12-17 Nippondenso Co Ltd 半導体力学量センサ及びその製造方法
US6211560B1 (en) * 1995-06-16 2001-04-03 The United States Of America As Represented By The Secretary Of The Air Force Voltage tunable schottky diode photoemissive infrared detector
JPH0953980A (ja) * 1995-08-18 1997-02-25 Nikon Corp 熱型赤外線センサ
US5919364A (en) 1996-06-24 1999-07-06 Regents Of The University Of California Microfabricated filter and shell constructed with a permeable membrane
GB9619706D0 (en) 1996-09-20 1996-11-06 Pharmacia Spa Synergistic immunosuppressant composition containing a 2,2'-bi-1H-pyrrole comp und
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US6707121B2 (en) * 1997-03-28 2004-03-16 Interuniversitair Microelektronica Centrum (Imec Vzw) Micro electro mechanical systems and devices
FR2765245B1 (fr) 1997-06-25 1999-09-17 France Telecom Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique
US6689211B1 (en) * 1999-04-09 2004-02-10 Massachusetts Institute Of Technology Etch stop layer system
US6238581B1 (en) 1998-12-18 2001-05-29 Eastman Kodak Company Process for manufacturing an electro-mechanical grating device
US6534381B2 (en) 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
WO2000042231A2 (en) 1999-01-15 2000-07-20 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems
US6822304B1 (en) * 1999-11-12 2004-11-23 The Board Of Trustees Of The Leland Stanford Junior University Sputtered silicon for microstructures and microcavities
US6346453B1 (en) * 2000-01-27 2002-02-12 Sige Microsystems Inc. Method of producing a SI-GE base heterojunction bipolar device
EP1251099A3 (en) * 2000-03-24 2004-07-21 Interuniversitair Microelektronica Centrum Vzw Method of improving mechanical strength in micro electro mechanical systems and devices produced thereof
ATE440378T1 (de) * 2000-04-05 2009-09-15 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
US6587613B2 (en) * 2001-07-24 2003-07-01 Innovative Technology Licensing, Llc Hybrid MEMS fabrication method and new optical MEMS device
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US6666979B2 (en) * 2001-10-29 2003-12-23 Applied Materials, Inc. Dry etch release of MEMS structures
US6770569B2 (en) * 2002-08-01 2004-08-03 Freescale Semiconductor, Inc. Low temperature plasma Si or SiGe for MEMS applications

Similar Documents

Publication Publication Date Title
JPH1140824A5 (OSRAM)
CN1322588C (zh) 电声换能器及其制造方法和使用该器件的电声换能装置
JPH11191628A5 (OSRAM)
DE60035665D1 (de) Bildsensoranordnung mit hohem Füllfaktor, einer ununterbrochenen amorphen Silizium-Sensorschicht und einem dotierten Polysilizium-Rückseitenkontakt, und Herstellungsverfahren dazu
JP2001244462A5 (OSRAM)
WO2005091795A3 (en) Method of making a semiconductor device, and semiconductor device made thereby
WO2002090244A3 (en) Microstructure devices, methods of forming a microstructure device and a method of forming a mems device
NO20011230L (no) Dannelse av opphengte partier ved bruk av SOI-substrater, og anvendelse derav for fremstilling av et vibrasjonsgyrometer
EP1014440A3 (en) Area array air gap structure for intermetal dielectric application
JP2002301697A5 (OSRAM)
JPH10233529A5 (OSRAM)
JP2004536453A5 (OSRAM)
JP2002043618A5 (OSRAM)
EP1220306A4 (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
JP2002033282A5 (OSRAM)
JPH09251996A5 (OSRAM)
AU7389800A (en) Method of etching a wafer layer using multiple layers of the same photoresistantmaterial and structure formed thereby
WO2002101342A3 (en) Microelctronic device and method of its manufacture
JP2002283296A5 (OSRAM)
JP2003229610A5 (OSRAM)
JPS58163A (ja) キヤパシタの製造方法
JPH0224541U (OSRAM)
JPS6471150A (en) Manufacture of semiconductor device
JPH0320158U (OSRAM)
KR960026264A (ko) 반도체 소자의 금속층 형성방법