JP2003229610A5 - - Google Patents

Download PDF

Info

Publication number
JP2003229610A5
JP2003229610A5 JP2002025398A JP2002025398A JP2003229610A5 JP 2003229610 A5 JP2003229610 A5 JP 2003229610A5 JP 2002025398 A JP2002025398 A JP 2002025398A JP 2002025398 A JP2002025398 A JP 2002025398A JP 2003229610 A5 JP2003229610 A5 JP 2003229610A5
Authority
JP
Japan
Prior art keywords
oxide superconducting
film
interlayer insulating
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002025398A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229610A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002025398A priority Critical patent/JP2003229610A/ja
Priority claimed from JP2002025398A external-priority patent/JP2003229610A/ja
Publication of JP2003229610A publication Critical patent/JP2003229610A/ja
Publication of JP2003229610A5 publication Critical patent/JP2003229610A5/ja
Pending legal-status Critical Current

Links

JP2002025398A 2002-02-01 2002-02-01 酸化物超電導接合基板の製造方法 Pending JP2003229610A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002025398A JP2003229610A (ja) 2002-02-01 2002-02-01 酸化物超電導接合基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002025398A JP2003229610A (ja) 2002-02-01 2002-02-01 酸化物超電導接合基板の製造方法

Publications (2)

Publication Number Publication Date
JP2003229610A JP2003229610A (ja) 2003-08-15
JP2003229610A5 true JP2003229610A5 (OSRAM) 2005-07-21

Family

ID=27747562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002025398A Pending JP2003229610A (ja) 2002-02-01 2002-02-01 酸化物超電導接合基板の製造方法

Country Status (1)

Country Link
JP (1) JP2003229610A (OSRAM)

Similar Documents

Publication Publication Date Title
WO2005091795A3 (en) Method of making a semiconductor device, and semiconductor device made thereby
JPH1041482A5 (OSRAM)
JPH11191628A5 (OSRAM)
JPH1140824A5 (OSRAM)
EP1437775A3 (en) Method of manufacturing a semiconductor memory with nano dots
JP2004111721A5 (OSRAM)
JP2015511067A5 (OSRAM)
JP2008504679A5 (OSRAM)
EP2302663A3 (en) Method of forming MIM capacitor
JP2006173432A5 (OSRAM)
JP2009501432A5 (OSRAM)
JP2003133424A5 (OSRAM)
JP2002043618A5 (OSRAM)
WO2010015301A8 (en) Passivation of etched semiconductor structures
JP2004079606A5 (OSRAM)
EP1148559A3 (en) High speed semiconductor photodetector and method of fabricating the same
JP2003229610A5 (OSRAM)
JP2003158196A5 (OSRAM)
JP2008513999A5 (OSRAM)
JP2007173816A5 (OSRAM)
JP2006041246A5 (OSRAM)
JP2000091416A5 (OSRAM)
JP2006093330A5 (OSRAM)
JPH1051005A5 (OSRAM)
JPH11177105A5 (OSRAM)