JPH1135394A - 強誘電体薄膜の製造方法および有機金属化学気相成長用原料 - Google Patents

強誘電体薄膜の製造方法および有機金属化学気相成長用原料

Info

Publication number
JPH1135394A
JPH1135394A JP9192229A JP19222997A JPH1135394A JP H1135394 A JPH1135394 A JP H1135394A JP 9192229 A JP9192229 A JP 9192229A JP 19222997 A JP19222997 A JP 19222997A JP H1135394 A JPH1135394 A JP H1135394A
Authority
JP
Japan
Prior art keywords
dpm
ipr
moles
thin film
tetraglyme
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9192229A
Other languages
English (en)
Japanese (ja)
Inventor
Katsuyuki Hironaka
克行 広中
Masataka Sugiyama
正隆 杉山
Chiharu Isobe
千春 磯辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9192229A priority Critical patent/JPH1135394A/ja
Priority to KR1019980028888A priority patent/KR100497926B1/ko
Publication of JPH1135394A publication Critical patent/JPH1135394A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Insulating Materials (AREA)
JP9192229A 1997-07-17 1997-07-17 強誘電体薄膜の製造方法および有機金属化学気相成長用原料 Pending JPH1135394A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9192229A JPH1135394A (ja) 1997-07-17 1997-07-17 強誘電体薄膜の製造方法および有機金属化学気相成長用原料
KR1019980028888A KR100497926B1 (ko) 1997-07-17 1998-07-16 강유전성박막의제조방법및유기금속화학기상증착용원료

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9192229A JPH1135394A (ja) 1997-07-17 1997-07-17 強誘電体薄膜の製造方法および有機金属化学気相成長用原料

Publications (1)

Publication Number Publication Date
JPH1135394A true JPH1135394A (ja) 1999-02-09

Family

ID=16287820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9192229A Pending JPH1135394A (ja) 1997-07-17 1997-07-17 強誘電体薄膜の製造方法および有機金属化学気相成長用原料

Country Status (2)

Country Link
JP (1) JPH1135394A (ko)
KR (1) KR100497926B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2370271A (en) * 2000-05-06 2002-06-26 Inorgtech Ltd Novel precursors for the growth of heterometal oxide films by MOCVD

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100381498B1 (ko) * 1995-05-22 2005-02-05 미쓰비시 마테리알 가부시키가이샤 비스무스계유전체박막및그의형성방법및그박막형성용조성물
JP3137004B2 (ja) * 1995-09-11 2001-02-19 ソニー株式会社 半導体素子のキャパシタ構造の作製方法
JP3223772B2 (ja) * 1995-11-15 2001-10-29 三菱マテリアル株式会社 Ｂｉ系強誘電体薄膜形成用組成物、薄膜形成方法及びＢｉ系強誘電体薄膜

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2370271A (en) * 2000-05-06 2002-06-26 Inorgtech Ltd Novel precursors for the growth of heterometal oxide films by MOCVD
GB2370271B (en) * 2000-05-06 2004-02-11 Inorgtech Ltd Novel precursors for the growth of heterometal oxide films by mocvd

Also Published As

Publication number Publication date
KR100497926B1 (ko) 2006-05-25
KR19990013958A (ko) 1999-02-25

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