JPH11302878A - ウエハ平坦化方法，ウエハ平坦化システム及びウエハ - Google Patents

ウエハ平坦化方法，ウエハ平坦化システム及びウエハ

Info

Publication number
JPH11302878A
JPH11302878A JP10126681A JP12668198A JPH11302878A JP H11302878 A JPH11302878 A JP H11302878A JP 10126681 A JP10126681 A JP 10126681A JP 12668198 A JP12668198 A JP 12668198A JP H11302878 A JPH11302878 A JP H11302878A
Authority
JP
Japan
Prior art keywords
wafer
outer peripheral
peripheral portion
active species
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10126681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11302878A5 (enExample
Inventor
Chikau Tanaka
誓 田中
Michihiko Yanagisawa
道彦 柳澤
Shinya Iida
進也 飯田
Yasuhiro Horiike
靖浩 堀池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SpeedFam-IPEC Co Ltd
Original Assignee
SpeedFam-IPEC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SpeedFam-IPEC Co Ltd filed Critical SpeedFam-IPEC Co Ltd
Priority to JP10126681A priority Critical patent/JPH11302878A/ja
Priority to EP99102810A priority patent/EP0951963A3/en
Priority to US09/260,336 priority patent/US6254718B1/en
Publication of JPH11302878A publication Critical patent/JPH11302878A/ja
Publication of JPH11302878A5 publication Critical patent/JPH11302878A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP10126681A 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ Pending JPH11302878A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10126681A JPH11302878A (ja) 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ
EP99102810A EP0951963A3 (en) 1998-04-21 1999-02-25 Wafer flattening process, wafer flattening system, and wafer
US09/260,336 US6254718B1 (en) 1998-04-21 1999-03-01 Combined CMP and plasma etching wafer flattening system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10126681A JPH11302878A (ja) 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ

Publications (2)

Publication Number Publication Date
JPH11302878A true JPH11302878A (ja) 1999-11-02
JPH11302878A5 JPH11302878A5 (enExample) 2005-09-15

Family

ID=14941231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10126681A Pending JPH11302878A (ja) 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ

Country Status (3)

Country Link
US (1) US6254718B1 (enExample)
EP (1) EP0951963A3 (enExample)
JP (1) JPH11302878A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006011434A (ja) * 2002-03-29 2006-01-12 Hoya Corp マスクブランク用基板、マスクブランクおよび転写用マスクの製造方法
JP2014127618A (ja) * 2012-12-27 2014-07-07 Disco Abrasive Syst Ltd 板状物の加工方法
JP2019201149A (ja) * 2018-05-17 2019-11-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021077819A (ja) * 2019-11-13 2021-05-20 株式会社ディスコ ウェーハの加工方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3871433B2 (ja) * 1998-03-10 2007-01-24 スピードファム株式会社 ウエハ平坦化方法及び記録媒体
US6451217B1 (en) * 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
JP4212707B2 (ja) * 1998-11-26 2009-01-21 スピードファム株式会社 ウエハ平坦化システム及びウエハ平坦化方法
JP2002016049A (ja) * 2000-06-29 2002-01-18 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法及びプラズマエッチング装置
US6592429B1 (en) 2000-07-28 2003-07-15 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity in a chemical mechanical polishing tool using carrier head signatures
US20040157461A1 (en) * 2003-02-10 2004-08-12 Seh America, Inc. Method for fabricating a wafer including dry etching the edge of the wafer
JP2009013046A (ja) * 2007-06-05 2009-01-22 Asahi Glass Co Ltd ガラス基板表面を加工する方法
JP2013542599A (ja) 2010-09-30 2013-11-21 フリースケール セミコンダクター インコーポレイテッド 半導体ウェハを処理するための方法、半導体ウェハおよび半導体デバイス
US9174323B2 (en) * 2012-11-07 2015-11-03 Intermolecular, Inc. Combinatorial tool for mechanically-assisted surface polishing and cleaning
CN109623581A (zh) * 2019-01-04 2019-04-16 芜湖启迪半导体有限公司 一种硬质材料的表面抛光方法
CN112095107A (zh) * 2020-10-19 2020-12-18 东莞市万业实业有限公司 等离子电浆抛光挂具自动翻转装置及其翻转方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
US5291415A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
IL104268A0 (en) * 1992-01-31 1993-05-13 Hughes Aircraft Co Reactive gas for plasma assisted chemical etching and methods for stable plasma etching of substrates over edges
GB2272225B (en) * 1992-10-06 1996-07-17 Balzers Hochvakuum A method for masking a workpiece and a vacuum treatment facility
TW273067B (enExample) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
JPH07297195A (ja) * 1994-04-27 1995-11-10 Speedfam Co Ltd 半導体装置の平坦化方法及び平坦化装置
JPH07328916A (ja) * 1994-06-06 1995-12-19 Japan Aviation Electron Ind Ltd ラップ・ポリッシュ盤
US5968849A (en) * 1995-06-26 1999-10-19 Motorola, Inc. Method for pre-shaping a semiconductor substrate for polishing and structure
JPH0927482A (ja) 1995-07-11 1997-01-28 Speedfam Co Ltd プラズマエッチング装置
US5718618A (en) * 1996-02-09 1998-02-17 Wisconsin Alumni Research Foundation Lapping and polishing method and apparatus for planarizing photoresist and metal microstructure layers
JPH09234667A (ja) * 1996-02-29 1997-09-09 Komatsu Electron Metals Co Ltd 半導体ウェハの研磨方法
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JPH10235552A (ja) * 1997-02-24 1998-09-08 Ebara Corp ポリッシング装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006011434A (ja) * 2002-03-29 2006-01-12 Hoya Corp マスクブランク用基板、マスクブランクおよび転写用マスクの製造方法
JP2014127618A (ja) * 2012-12-27 2014-07-07 Disco Abrasive Syst Ltd 板状物の加工方法
JP2019201149A (ja) * 2018-05-17 2019-11-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021077819A (ja) * 2019-11-13 2021-05-20 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
US6254718B1 (en) 2001-07-03
EP0951963A2 (en) 1999-10-27
EP0951963A3 (en) 2003-08-06

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