JPH11302878A5 - - Google Patents

Info

Publication number
JPH11302878A5
JPH11302878A5 JP1998126681A JP12668198A JPH11302878A5 JP H11302878 A5 JPH11302878 A5 JP H11302878A5 JP 1998126681 A JP1998126681 A JP 1998126681A JP 12668198 A JP12668198 A JP 12668198A JP H11302878 A5 JPH11302878 A5 JP H11302878A5
Authority
JP
Japan
Prior art keywords
surface plate
rotation
pulley
transmitted
main motor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998126681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11302878A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10126681A priority Critical patent/JPH11302878A/ja
Priority claimed from JP10126681A external-priority patent/JPH11302878A/ja
Priority to EP99102810A priority patent/EP0951963A3/en
Priority to US09/260,336 priority patent/US6254718B1/en
Publication of JPH11302878A publication Critical patent/JPH11302878A/ja
Publication of JPH11302878A5 publication Critical patent/JPH11302878A5/ja
Pending legal-status Critical Current

Links

JP10126681A 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ Pending JPH11302878A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10126681A JPH11302878A (ja) 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ
EP99102810A EP0951963A3 (en) 1998-04-21 1999-02-25 Wafer flattening process, wafer flattening system, and wafer
US09/260,336 US6254718B1 (en) 1998-04-21 1999-03-01 Combined CMP and plasma etching wafer flattening system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10126681A JPH11302878A (ja) 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ

Publications (2)

Publication Number Publication Date
JPH11302878A JPH11302878A (ja) 1999-11-02
JPH11302878A5 true JPH11302878A5 (enExample) 2005-09-15

Family

ID=14941231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10126681A Pending JPH11302878A (ja) 1998-04-21 1998-04-21 ウエハ平坦化方法，ウエハ平坦化システム及びウエハ

Country Status (3)

Country Link
US (1) US6254718B1 (enExample)
EP (1) EP0951963A3 (enExample)
JP (1) JPH11302878A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3871433B2 (ja) * 1998-03-10 2007-01-24 スピードファム株式会社 ウエハ平坦化方法及び記録媒体
US6451217B1 (en) * 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
JP4212707B2 (ja) * 1998-11-26 2009-01-21 スピードファム株式会社 ウエハ平坦化システム及びウエハ平坦化方法
JP2002016049A (ja) * 2000-06-29 2002-01-18 Shin Etsu Handotai Co Ltd 半導体ウエーハの加工方法及びプラズマエッチング装置
US6592429B1 (en) 2000-07-28 2003-07-15 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity in a chemical mechanical polishing tool using carrier head signatures
JP2006011434A (ja) * 2002-03-29 2006-01-12 Hoya Corp マスクブランク用基板、マスクブランクおよび転写用マスクの製造方法
US20040157461A1 (en) * 2003-02-10 2004-08-12 Seh America, Inc. Method for fabricating a wafer including dry etching the edge of the wafer
JP2009013046A (ja) * 2007-06-05 2009-01-22 Asahi Glass Co Ltd ガラス基板表面を加工する方法
JP2013542599A (ja) 2010-09-30 2013-11-21 フリースケール セミコンダクター インコーポレイテッド 半導体ウェハを処理するための方法、半導体ウェハおよび半導体デバイス
US9174323B2 (en) * 2012-11-07 2015-11-03 Intermolecular, Inc. Combinatorial tool for mechanically-assisted surface polishing and cleaning
JP6129551B2 (ja) * 2012-12-27 2017-05-17 株式会社ディスコ 板状物の加工方法
JP2019201149A (ja) * 2018-05-17 2019-11-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN109623581A (zh) * 2019-01-04 2019-04-16 芜湖启迪半导体有限公司 一种硬质材料的表面抛光方法
JP7412142B2 (ja) * 2019-11-13 2024-01-12 株式会社ディスコ ウェーハの加工方法
CN112095107A (zh) * 2020-10-19 2020-12-18 东莞市万业实业有限公司 等离子电浆抛光挂具自动翻转装置及其翻转方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
US5291415A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
IL104268A0 (en) * 1992-01-31 1993-05-13 Hughes Aircraft Co Reactive gas for plasma assisted chemical etching and methods for stable plasma etching of substrates over edges
GB2272225B (en) * 1992-10-06 1996-07-17 Balzers Hochvakuum A method for masking a workpiece and a vacuum treatment facility
TW273067B (enExample) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
JPH07297195A (ja) * 1994-04-27 1995-11-10 Speedfam Co Ltd 半導体装置の平坦化方法及び平坦化装置
JPH07328916A (ja) * 1994-06-06 1995-12-19 Japan Aviation Electron Ind Ltd ラップ・ポリッシュ盤
US5968849A (en) * 1995-06-26 1999-10-19 Motorola, Inc. Method for pre-shaping a semiconductor substrate for polishing and structure
JPH0927482A (ja) 1995-07-11 1997-01-28 Speedfam Co Ltd プラズマエッチング装置
US5718618A (en) * 1996-02-09 1998-02-17 Wisconsin Alumni Research Foundation Lapping and polishing method and apparatus for planarizing photoresist and metal microstructure layers
JPH09234667A (ja) * 1996-02-29 1997-09-09 Komatsu Electron Metals Co Ltd 半導体ウェハの研磨方法
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JPH10235552A (ja) * 1997-02-24 1998-09-08 Ebara Corp ポリッシング装置

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