JPH11297680A - 薄膜形成用溶液及び薄膜形成方法 - Google Patents

薄膜形成用溶液及び薄膜形成方法

Info

Publication number
JPH11297680A
JPH11297680A JP10098655A JP9865598A JPH11297680A JP H11297680 A JPH11297680 A JP H11297680A JP 10098655 A JP10098655 A JP 10098655A JP 9865598 A JP9865598 A JP 9865598A JP H11297680 A JPH11297680 A JP H11297680A
Authority
JP
Japan
Prior art keywords
thin film
organic
compound
solution
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10098655A
Other languages
English (en)
Japanese (ja)
Inventor
Atsushi Sai
篤 齋
Kazuo Wakabayashi
和夫 若林
Katsumi Ogi
勝実 小木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP10098655A priority Critical patent/JPH11297680A/ja
Priority to KR1019990012558A priority patent/KR100613632B1/ko
Publication of JPH11297680A publication Critical patent/JPH11297680A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP10098655A 1998-04-10 1998-04-10 薄膜形成用溶液及び薄膜形成方法 Pending JPH11297680A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10098655A JPH11297680A (ja) 1998-04-10 1998-04-10 薄膜形成用溶液及び薄膜形成方法
KR1019990012558A KR100613632B1 (ko) 1998-04-10 1999-04-09 박막 형성용 용액 및 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10098655A JPH11297680A (ja) 1998-04-10 1998-04-10 薄膜形成用溶液及び薄膜形成方法

Publications (1)

Publication Number Publication Date
JPH11297680A true JPH11297680A (ja) 1999-10-29

Family

ID=14225535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10098655A Pending JPH11297680A (ja) 1998-04-10 1998-04-10 薄膜形成用溶液及び薄膜形成方法

Country Status (2)

Country Link
JP (1) JPH11297680A (ko)
KR (1) KR100613632B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020088128A (ko) * 2001-05-17 2002-11-27 학교법인 포항공과대학교 유기금속 화학증착법에 의한 산화비스무스 박막의 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
JPH0718076A (ja) * 1993-06-30 1995-01-20 Tdk Corp 気相重合膜および情報媒体
JPH08176826A (ja) * 1994-12-28 1996-07-09 Mitsubishi Electric Corp Ｃｖｄ法による薄膜の堆積装置及び堆積方法並びに該堆積装置又は該堆積方法で用いられるｃｖｄ原料及び液体原料容器
JP3680542B2 (ja) * 1998-02-09 2005-08-10 三菱マテリアル株式会社 Ｍｏｃｖｄに適した有機チタン化合物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020088128A (ko) * 2001-05-17 2002-11-27 학교법인 포항공과대학교 유기금속 화학증착법에 의한 산화비스무스 박막의 제조방법

Also Published As

Publication number Publication date
KR100613632B1 (ko) 2006-08-17
KR19990083095A (ko) 1999-11-25

Similar Documents

Publication Publication Date Title
JP4861550B2 (ja) 液体供給ｃｖｄのためのアルカン／ポリアミン溶剤組成物
US6238734B1 (en) Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP3723226B2 (ja) 強誘電性メモリ装置において有用なビスマス含有セラミック薄膜を形成するための低温化学蒸着法
US6541067B1 (en) Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same
US6503561B1 (en) Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6444264B2 (en) Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US6214105B1 (en) Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6344079B1 (en) Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6274195B1 (en) Organometallic complex process for the preparation thereof and metal organic chemical vapor deposition using same
JPH11297680A (ja) 薄膜形成用溶液及び薄膜形成方法
JP3106988B2 (ja) 薄膜形成用溶液及び薄膜形成方法
JP2004256510A (ja) Ｃｖｄ用ビスマス原料溶液及びこれを用いたビスマス含有薄膜の製造方法
KR20070026658A (ko) 유기 금속 화학 증착용 용액 원료 및 상기 원료를 사용하여제조된 복합 산화물계 유전체 박막
JP3957112B2 (ja) 複合酸化物系誘電体薄膜形成用の溶液原料と誘電体薄膜
JP3484947B2 (ja) Ｂｉ含有薄膜形成用溶液およびこれを用いた薄膜形成方法
US6858251B2 (en) Lanthanum complex and process for the preparation of a BLT layer using same
KR102562274B1 (ko) 유기 금속 전구체 화합물
KR100298129B1 (ko) (바륨,스트론튬)삼산화티탄박막의제조방법
Momose et al. Film precursor formation in metalorganic chemical vapor deposition of barium strontium titanate films: A study by microdischarge optical emission spectroscopy
KR100399606B1 (ko) 유기금속 화학증착법에 의한 피젯티 박막의 제조방법
KR100480501B1 (ko) 유기금속 화학증착법에 의한 ｐｚｔ 박막의 제조방법
JPH10324970A (ja) Ｃｖｄ用原料およびこれを用いた成膜法
KR100497926B1 (ko) 강유전성박막의제조방법및유기금속화학기상증착용원료
JP2006179851A (ja) 有機金属化学蒸着法用溶液原料及び該原料を用いて作製された複合酸化物系誘電体薄膜
JP2004051619A (ja) Ｃｖｄ用ジルコニウム原料及びこれを用いたチタン酸ジルコン酸鉛系薄膜の製造方法

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20030304