JPH11261174A5 - - Google Patents

Info

Publication number
JPH11261174A5
JPH11261174A5 JP1999017033A JP1703399A JPH11261174A5 JP H11261174 A5 JPH11261174 A5 JP H11261174A5 JP 1999017033 A JP1999017033 A JP 1999017033A JP 1703399 A JP1703399 A JP 1703399A JP H11261174 A5 JPH11261174 A5 JP H11261174A5
Authority
JP
Japan
Prior art keywords
vcsel
buffer layer
reflector
vcsels
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999017033A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11261174A (ja
JP4643776B2 (ja
Filing date
Publication date
Priority claimed from US09/020,724 external-priority patent/US6069908A/en
Application filed filed Critical
Publication of JPH11261174A publication Critical patent/JPH11261174A/ja
Publication of JPH11261174A5 publication Critical patent/JPH11261174A5/ja
Application granted granted Critical
Publication of JP4643776B2 publication Critical patent/JP4643776B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP01703399A 1998-02-09 1999-01-26 Ｖｃｓｅｌおよびｖｃｓｅｌアレイ Expired - Lifetime JP4643776B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/020,724 US6069908A (en) 1998-02-09 1998-02-09 N-drive or P-drive VCSEL array
US020,724 1998-02-09

Publications (3)

Publication Number Publication Date
JPH11261174A JPH11261174A (ja) 1999-09-24
JPH11261174A5 true JPH11261174A5 (enExample) 2006-04-27
JP4643776B2 JP4643776B2 (ja) 2011-03-02

Family

ID=21800203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01703399A Expired - Lifetime JP4643776B2 (ja) 1998-02-09 1999-01-26 Ｖｃｓｅｌおよびｖｃｓｅｌアレイ

Country Status (4)

Country Link
US (1) US6069908A (enExample)
EP (1) EP0935322B1 (enExample)
JP (1) JP4643776B2 (enExample)
DE (1) DE69832360T2 (enExample)

Families Citing this family (29)

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Publication number Priority date Publication date Assignee Title
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
MY128323A (en) 1996-09-30 2007-01-31 Otsuka Pharma Co Ltd Thiazole derivatives for inhibition of cytokine production and of cell adhesion
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
KR100618969B1 (ko) 1999-07-12 2006-08-31 삼성전자주식회사 광송수신 모듈
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6730990B2 (en) * 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
EP1357648B1 (en) * 2002-04-25 2006-10-11 Avalon Photonics AG High speed vertical cavity surface emitting laser device (VCSEL) with low parasitic capacitance
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US6901212B2 (en) * 2002-06-13 2005-05-31 Halliburton Energy Services, Inc. Digital adaptive sensorless commutational drive controller for a brushless DC motor
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
WO2005048318A2 (en) * 2003-11-17 2005-05-26 Osemi, Inc. Nitride metal oxide semiconductor integrated transistor devices
US20080282983A1 (en) * 2003-12-09 2008-11-20 Braddock Iv Walter David High Temperature Vacuum Evaporation Apparatus
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2006066846A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 面発光型装置及びその製造方法
CN100384040C (zh) * 2004-07-29 2008-04-23 精工爱普生株式会社 面发光型装置及其制造方法
JP2009246291A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光レーザアレイ素子
JP2011114146A (ja) * 2009-11-26 2011-06-09 Hamamatsu Photonics Kk 半導体発光素子
JPWO2013176201A1 (ja) * 2012-05-25 2016-01-14 株式会社村田製作所 垂直共振面発光レーザ
RU2633643C2 (ru) * 2012-07-11 2017-10-16 Конинклейке Филипс Н.В. Vcsel с внутрирезонаторными контактами
EP3111520B1 (en) * 2014-02-25 2020-07-08 Koninklijke Philips N.V. Light emitting semiconductor devices with getter layer
US10199794B1 (en) * 2017-09-20 2019-02-05 Lumentum Operations Llc Electrically isolating adjacent vertical-emitting devices
US10666020B2 (en) * 2017-09-20 2020-05-26 Lumentum Operations Llc Reconfigurable emitter array
US11581705B2 (en) 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2963701B2 (ja) * 1989-09-20 1999-10-18 株式会社日立製作所 半導体レーザ装置
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5331658A (en) * 1992-08-26 1994-07-19 Motorola, Inc. Vertical cavity surface emitting laser and sensor
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
JP2618610B2 (ja) * 1994-02-25 1997-06-11 松下電器産業株式会社 垂直共振器型面発光半導体レーザ
JPH07297476A (ja) * 1994-04-21 1995-11-10 Hitachi Ltd 半導体レーザ装置
US5729563A (en) * 1994-07-07 1998-03-17 Hewlett-Packard Company Method and apparatus for optically and thermally isolating surface emitting laser diodes
JP3236774B2 (ja) * 1996-02-16 2001-12-10 日本電信電話株式会社 半導体集積回路
JPH09232667A (ja) * 1996-02-21 1997-09-05 Sony Corp 化合物半導体装置とその製造方法
JP2761866B2 (ja) * 1996-03-04 1998-06-04 東海ゴム工業株式会社 プリント回路体及びその製造方法
US5805624A (en) * 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
JP3752339B2 (ja) * 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
US5831960A (en) * 1997-07-17 1998-11-03 Motorola, Inc. Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication

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