JP4643776B2 - Ｖｃｓｅｌおよびｖｃｓｅｌアレイ - Google Patents

Ｖｃｓｅｌおよびｖｃｓｅｌアレイ Download PDF

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Publication number
JP4643776B2
JP4643776B2 JP01703399A JP1703399A JP4643776B2 JP 4643776 B2 JP4643776 B2 JP 4643776B2 JP 01703399 A JP01703399 A JP 01703399A JP 1703399 A JP1703399 A JP 1703399A JP 4643776 B2 JP4643776 B2 JP 4643776B2
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Japan
Prior art keywords
vcsel
region
buffer layer
reflector
vcsels
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Expired - Lifetime
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JP01703399A
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English (en)
Japanese (ja)
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JPH11261174A (ja
JPH11261174A5 (enExample
Inventor
アルバート・ティ・ユーエン
マイケル・アール・ティ・タン
チュン・レイ
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アバゴ・テクノロジーズ・ファイバー・アイピー（シンガポール）プライベート・リミテッド
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Publication of JPH11261174A publication Critical patent/JPH11261174A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0208—Semi-insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP01703399A 1998-02-09 1999-01-26 Ｖｃｓｅｌおよびｖｃｓｅｌアレイ Expired - Lifetime JP4643776B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/020,724 US6069908A (en) 1998-02-09 1998-02-09 N-drive or P-drive VCSEL array
US020,724 1998-02-09

Publications (3)

Publication Number Publication Date
JPH11261174A JPH11261174A (ja) 1999-09-24
JPH11261174A5 JPH11261174A5 (enExample) 2006-04-27
JP4643776B2 true JP4643776B2 (ja) 2011-03-02

Family

ID=21800203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01703399A Expired - Lifetime JP4643776B2 (ja) 1998-02-09 1999-01-26 Ｖｃｓｅｌおよびｖｃｓｅｌアレイ

Country Status (4)

Country Link
US (1) US6069908A (enExample)
EP (1) EP0935322B1 (enExample)
JP (1) JP4643776B2 (enExample)
DE (1) DE69832360T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354439B2 (en) 1996-09-30 2013-01-15 Otsuka Pharmaceutical Co., Ltd. Agent for inhibition of cytokine production and agent for inhibition of cell adhesion

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US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
KR100618969B1 (ko) 1999-07-12 2006-08-31 삼성전자주식회사 광송수신 모듈
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6730990B2 (en) * 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
EP1357648B1 (en) * 2002-04-25 2006-10-11 Avalon Photonics AG High speed vertical cavity surface emitting laser device (VCSEL) with low parasitic capacitance
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US6901212B2 (en) * 2002-06-13 2005-05-31 Halliburton Energy Services, Inc. Digital adaptive sensorless commutational drive controller for a brushless DC motor
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
WO2005048318A2 (en) * 2003-11-17 2005-05-26 Osemi, Inc. Nitride metal oxide semiconductor integrated transistor devices
US20080282983A1 (en) * 2003-12-09 2008-11-20 Braddock Iv Walter David High Temperature Vacuum Evaporation Apparatus
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2006066846A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 面発光型装置及びその製造方法
CN100384040C (zh) * 2004-07-29 2008-04-23 精工爱普生株式会社 面发光型装置及其制造方法
JP2009246291A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光レーザアレイ素子
JP2011114146A (ja) * 2009-11-26 2011-06-09 Hamamatsu Photonics Kk 半導体発光素子
JPWO2013176201A1 (ja) * 2012-05-25 2016-01-14 株式会社村田製作所 垂直共振面発光レーザ
RU2633643C2 (ru) * 2012-07-11 2017-10-16 Конинклейке Филипс Н.В. Vcsel с внутрирезонаторными контактами
EP3111520B1 (en) * 2014-02-25 2020-07-08 Koninklijke Philips N.V. Light emitting semiconductor devices with getter layer
US10199794B1 (en) * 2017-09-20 2019-02-05 Lumentum Operations Llc Electrically isolating adjacent vertical-emitting devices
US10666020B2 (en) * 2017-09-20 2020-05-26 Lumentum Operations Llc Reconfigurable emitter array
US11581705B2 (en) 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2963701B2 (ja) * 1989-09-20 1999-10-18 株式会社日立製作所 半導体レーザ装置
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5331658A (en) * 1992-08-26 1994-07-19 Motorola, Inc. Vertical cavity surface emitting laser and sensor
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
JP2618610B2 (ja) * 1994-02-25 1997-06-11 松下電器産業株式会社 垂直共振器型面発光半導体レーザ
JPH07297476A (ja) * 1994-04-21 1995-11-10 Hitachi Ltd 半導体レーザ装置
US5729563A (en) * 1994-07-07 1998-03-17 Hewlett-Packard Company Method and apparatus for optically and thermally isolating surface emitting laser diodes
JP3236774B2 (ja) * 1996-02-16 2001-12-10 日本電信電話株式会社 半導体集積回路
JPH09232667A (ja) * 1996-02-21 1997-09-05 Sony Corp 化合物半導体装置とその製造方法
JP2761866B2 (ja) * 1996-03-04 1998-06-04 東海ゴム工業株式会社 プリント回路体及びその製造方法
US5805624A (en) * 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
JP3752339B2 (ja) * 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
US5831960A (en) * 1997-07-17 1998-11-03 Motorola, Inc. Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354439B2 (en) 1996-09-30 2013-01-15 Otsuka Pharmaceutical Co., Ltd. Agent for inhibition of cytokine production and agent for inhibition of cell adhesion

Also Published As

Publication number Publication date
US6069908A (en) 2000-05-30
JPH11261174A (ja) 1999-09-24
EP0935322B1 (en) 2005-11-16
EP0935322A1 (en) 1999-08-11
DE69832360D1 (de) 2005-12-22
DE69832360T2 (de) 2006-08-03

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