DE69832360D1 - N- oder P-getriebener VCSEL Vielfachlaser - Google Patents

N- oder P-getriebener VCSEL Vielfachlaser

Info

Publication number
DE69832360D1
DE69832360D1 DE69832360T DE69832360T DE69832360D1 DE 69832360 D1 DE69832360 D1 DE 69832360D1 DE 69832360 T DE69832360 T DE 69832360T DE 69832360 T DE69832360 T DE 69832360T DE 69832360 D1 DE69832360 D1 DE 69832360D1
Authority
DE
Germany
Prior art keywords
multiple laser
vcsel
driven
driven vcsel
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69832360T
Other languages
English (en)
Other versions
DE69832360T2 (de
Inventor
Albert T Yuen
Michael R T Tan
Chun Lei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69832360D1 publication Critical patent/DE69832360D1/de
Publication of DE69832360T2 publication Critical patent/DE69832360T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0208—Semi-insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69832360T 1998-02-09 1998-09-10 N- oder P-getriebener VCSEL Vielfachlaser Expired - Lifetime DE69832360T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20724 1998-02-09
US09/020,724 US6069908A (en) 1998-02-09 1998-02-09 N-drive or P-drive VCSEL array

Publications (2)

Publication Number Publication Date
DE69832360D1 true DE69832360D1 (de) 2005-12-22
DE69832360T2 DE69832360T2 (de) 2006-08-03

Family

ID=21800203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69832360T Expired - Lifetime DE69832360T2 (de) 1998-02-09 1998-09-10 N- oder P-getriebener VCSEL Vielfachlaser

Country Status (4)

Country Link
US (1) US6069908A (de)
EP (1) EP0935322B1 (de)
JP (1) JP4643776B2 (de)
DE (1) DE69832360T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
MY128323A (en) 1996-09-30 2007-01-31 Otsuka Pharma Co Ltd Thiazole derivatives for inhibition of cytokine production and of cell adhesion
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
KR100618969B1 (ko) 1999-07-12 2006-08-31 삼성전자주식회사 광송수신 모듈
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6730990B2 (en) * 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
EP1357648B1 (de) * 2002-04-25 2006-10-11 Avalon Photonics AG Hochgeschwindigkeitstauglicher Vertikalresonator-Oberflächenemissionslaser (VCSEL) mit niedriger Parasitärkapazität
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US6901212B2 (en) * 2002-06-13 2005-05-31 Halliburton Energy Services, Inc. Digital adaptive sensorless commutational drive controller for a brushless DC motor
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
US20080282983A1 (en) * 2003-12-09 2008-11-20 Braddock Iv Walter David High Temperature Vacuum Evaporation Apparatus
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2006066846A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 面発光型装置及びその製造方法
CN100384040C (zh) * 2004-07-29 2008-04-23 精工爱普生株式会社 面发光型装置及其制造方法
JP2009246291A (ja) 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光レーザアレイ素子
JP2011114146A (ja) * 2009-11-26 2011-06-09 Hamamatsu Photonics Kk 半導体発光素子
WO2013176201A1 (ja) * 2012-05-25 2013-11-28 株式会社村田製作所 垂直共振面発光レーザ
BR112015000331A2 (pt) * 2012-07-11 2017-06-27 Koninklijke Philips Nv dispositivo de laser sendo formado de pelo menos um laser de emissão superficial de camada vertical com contatos intracavidade
WO2015128254A1 (en) 2014-02-25 2015-09-03 Koninklijke Philips N.V. Light emitting semiconductor devices with getter layer
US10199794B1 (en) * 2017-09-20 2019-02-05 Lumentum Operations Llc Electrically isolating adjacent vertical-emitting devices
US10666020B2 (en) * 2017-09-20 2020-05-26 Lumentum Operations Llc Reconfigurable emitter array
US11581705B2 (en) 2019-04-08 2023-02-14 Lumentum Operations Llc Vertical-cavity surface-emitting laser with dense epi-side contacts

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2963701B2 (ja) * 1989-09-20 1999-10-18 株式会社日立製作所 半導体レーザ装置
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5331658A (en) * 1992-08-26 1994-07-19 Motorola, Inc. Vertical cavity surface emitting laser and sensor
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
JP2618610B2 (ja) * 1994-02-25 1997-06-11 松下電器産業株式会社 垂直共振器型面発光半導体レーザ
JPH07297476A (ja) * 1994-04-21 1995-11-10 Hitachi Ltd 半導体レーザ装置
US5729563A (en) * 1994-07-07 1998-03-17 Hewlett-Packard Company Method and apparatus for optically and thermally isolating surface emitting laser diodes
JP3236774B2 (ja) * 1996-02-16 2001-12-10 日本電信電話株式会社 半導体集積回路
JPH09232667A (ja) * 1996-02-21 1997-09-05 Sony Corp 化合物半導体装置とその製造方法
JP2761866B2 (ja) * 1996-03-04 1998-06-04 東海ゴム工業株式会社 プリント回路体及びその製造方法
US5805624A (en) * 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
JP3752339B2 (ja) * 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
US5831960A (en) * 1997-07-17 1998-11-03 Motorola, Inc. Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication

Also Published As

Publication number Publication date
EP0935322B1 (de) 2005-11-16
EP0935322A1 (de) 1999-08-11
JP4643776B2 (ja) 2011-03-02
DE69832360T2 (de) 2006-08-03
US6069908A (en) 2000-05-30
JPH11261174A (ja) 1999-09-24

Similar Documents

Publication Publication Date Title
DE69832360D1 (de) N- oder P-getriebener VCSEL Vielfachlaser
DE69817099D1 (de) Laserdrucker
DE69840287D1 (de) Hochfrequenz-angeregter wellenleiterlaser
DE59910695D1 (de) Wellenlängenstabilisierte Laseranordnung
DE69801405T2 (de) Mantelgepumpte Faserlaser
DE69908745D1 (de) Laserbearbeitungskopf
DE69906177T2 (de) Laserdioden-Modul
DE69900427T2 (de) Verbesserter Quantumcascadelaser
DE59903605D1 (de) Laserverstärkersystem
DE19750586B4 (de) Laser-Lötverfahren
DE60032862D1 (de) Laserätzverfahren
DE59500334D1 (de) Abstimmbare Laserdiode
DE59910403D1 (de) Laserinstrument
FI982843A (fi) Laserlähetin
DE19982980T1 (de) Kohärentes Mehrstrahl-Lasersystem
DE59805493D1 (de) Laserresonator
DE69900296D1 (de) Laserdiodengepumpter Festkörperlaser
DE69702675D1 (de) Heterostrukturlaser
DE50002091D1 (de) Festkörperlaser
FI980860A (fi) Aallonpituudeltaan säädettävä laserjärjestely
ATA150099A (de) Laserskalpell
DE69813465D1 (de) Laserschneideinrichtung
DE69937857D1 (de) Lasersystem
DE69924544D1 (de) Faserlaser
DE60017076D1 (de) Lasersystem

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.,

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SCHOPPE, ZIMMERMANN, STOECKELER & ZINKLER, 82049 PU

8328 Change in the person/name/address of the agent

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA