DE69900427T2 - Verbesserter Quantumcascadelaser - Google Patents

Verbesserter Quantumcascadelaser

Info

Publication number
DE69900427T2
DE69900427T2 DE69900427T DE69900427T DE69900427T2 DE 69900427 T2 DE69900427 T2 DE 69900427T2 DE 69900427 T DE69900427 T DE 69900427T DE 69900427 T DE69900427 T DE 69900427T DE 69900427 T2 DE69900427 T2 DE 69900427T2
Authority
DE
Germany
Prior art keywords
quantum cascade
cascade laser
improved quantum
improved
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69900427T
Other languages
English (en)
Other versions
DE69900427D1 (de
Inventor
James Nelson Baillargeon
Federico Capasso
Alfred Yi Cho
Claire F Gmachl
Albert Lee Hutchinson
Deborah Lee Sivco
Alessandro Tredicucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69900427D1 publication Critical patent/DE69900427D1/de
Publication of DE69900427T2 publication Critical patent/DE69900427T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69900427T 1998-06-12 1999-05-26 Verbesserter Quantumcascadelaser Expired - Lifetime DE69900427T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/096,701 US6137817A (en) 1998-06-12 1998-06-12 Quantum cascade laser

Publications (2)

Publication Number Publication Date
DE69900427D1 DE69900427D1 (de) 2001-12-13
DE69900427T2 true DE69900427T2 (de) 2002-06-27

Family

ID=22258659

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69900427T Expired - Lifetime DE69900427T2 (de) 1998-06-12 1999-05-26 Verbesserter Quantumcascadelaser

Country Status (4)

Country Link
US (1) US6137817A (de)
EP (1) EP0964488B1 (de)
JP (1) JP3717712B2 (de)
DE (1) DE69900427T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6404791B1 (en) 1999-10-07 2002-06-11 Maxion Technologies, Inc. Parallel cascade quantum well light emitting device
EP1130724A1 (de) * 2000-03-03 2001-09-05 Alpes Lasers Quantenkaskadierter Laser und sein Herstellungsverfahren
DE10015615C2 (de) * 2000-03-29 2002-07-11 Draegerwerk Ag Gasmesssystem
EP1195865A1 (de) * 2000-08-31 2002-04-10 Alpes Lasers SA Quantenkaskadierter Laser
EP1189317A1 (de) * 2000-09-13 2002-03-20 Alpes Lasers SA Quantenkaskadenlaser mit Anregung durch optische Phononen
DE10061234C2 (de) * 2000-12-08 2003-01-16 Paul Drude Inst Fuer Festkoerp Unipolarer Halbleiterlaser ohne Injektionsschichten
US6690699B2 (en) * 2001-03-02 2004-02-10 Lucent Technologies Inc Quantum cascade laser with relaxation-stabilized injection
US6795467B2 (en) 2001-04-04 2004-09-21 Lucent Technologies Inc. Technique for measuring intersubband electroluminescence in a quantum cascade laser
EP1283571B1 (de) * 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
ATE361565T1 (de) * 2002-03-08 2007-05-15 Nanoplus Gmbh Nanosystems And Ein halbleiterlaserarray mit seitlicher gratingstruktur
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
CN100373724C (zh) * 2005-08-31 2008-03-05 中国科学院上海微系统与信息技术研究所 磷化铟基含砷含磷量子级联激光器结构及不间断生长法
JP5641667B2 (ja) * 2007-01-18 2014-12-17 浜松ホトニクス株式会社 量子カスケードレーザ
DE102007002819B4 (de) * 2007-01-19 2008-10-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Unipolarer Quantenkaskaden-Laser hoher Effizienz
US20080273565A1 (en) * 2007-05-04 2008-11-06 Gmachl Claire F Excited state quantum cascade photon source
US8014430B2 (en) * 2008-02-27 2011-09-06 President And Fellows Of Harvard College Quantum cascade laser
FR2933542B1 (fr) * 2008-07-04 2016-03-04 Thales Sa Dispositif a cascades quantiques a injecteur haut
WO2010059180A2 (en) * 2008-11-07 2010-05-27 President And Fellows Of Harvard College Methods and apparatus for single-mode selection in quantum cascade lasers
JP5523759B2 (ja) * 2009-07-31 2014-06-18 浜松ホトニクス株式会社 量子カスケードレーザ
JP2011035138A (ja) * 2009-07-31 2011-02-17 Hamamatsu Photonics Kk 半導体発光素子
DE102011117278B4 (de) 2011-10-31 2014-07-10 Julius-Maximilians-Universität Würzburg Interbandkaskadenlaser-Verstärkermedium
US9608408B2 (en) 2012-09-26 2017-03-28 Pranalytica, Inc. Long wavelength quantum cascade lasers based on high strain composition
US9088126B2 (en) 2013-10-17 2015-07-21 The Trustees Of Princeton University Single-mode quantum cascade lasers with enhanced tuning range
EP3075040B1 (de) * 2013-11-30 2018-08-08 Thorlabs Quantum Electronics, Inc. Quantenkaskadenlaser
JP6467193B2 (ja) * 2014-10-30 2019-02-06 浜松ホトニクス株式会社 量子カスケードレーザ
JP2020123662A (ja) * 2019-01-30 2020-08-13 住友電気工業株式会社 量子カスケードレーザ
JP7287594B1 (ja) * 2022-11-15 2023-06-06 三菱電機株式会社 Ｑｃｌ装置、外部共振型ｑｃｌモジュール装置、分析装置及び光照射方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182550A (ja) * 1987-01-23 1988-07-27 Fujitsu Ltd ガスセンサ
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5727010A (en) * 1996-03-20 1998-03-10 Lucent Technologies Inc. Article comprising an improved quantum cascade laser
JP3159946B2 (ja) * 1996-11-06 2001-04-23 ルーセント テクノロジーズ インコーポレイテッド 量子カスケードレーザを有する物品

Also Published As

Publication number Publication date
JP2000012983A (ja) 2000-01-14
DE69900427D1 (de) 2001-12-13
EP0964488A3 (de) 1999-12-22
US6137817A (en) 2000-10-24
JP3717712B2 (ja) 2005-11-16
EP0964488B1 (de) 2001-11-07
EP0964488A2 (de) 1999-12-15

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Legal Events

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