WO2023025246A1 - 一种薄膜型半导体芯片结构及应用其的光电器件 - Google Patents

一种薄膜型半导体芯片结构及应用其的光电器件 Download PDF

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WO2023025246A1
WO2023025246A1 PCT/CN2022/114831 CN2022114831W WO2023025246A1 WO 2023025246 A1 WO2023025246 A1 WO 2023025246A1 CN 2022114831 W CN2022114831 W CN 2022114831W WO 2023025246 A1 WO2023025246 A1 WO 2023025246A1
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layer
metal
semiconductor chip
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王伟民
陈亮
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江苏宜兴德融科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers

Definitions

  • the invention relates to a thin-film semiconductor chip structure in the semiconductor field and an optoelectronic device using the same.
  • Light-emitting diodes made of III-V, II-IV, III-nitride, and III-arsenic-phosphide semiconductor light-emitting materials are used as the main body of the fourth-generation light source (semiconductor solid-state lighting). It has many advantages such as energy saving, environmental protection, long life, small size, light weight, shock resistance, good safety (low voltage drive), short response time, cold light source, rich colors, wide application range, etc. It is widely used in LCD backlight lighting source , automotive lighting, indoor and outdoor general lighting, display screens, traffic lights, landscape lighting, micro projectors, plant lighting, medical lighting equipment (such as: blue light for the treatment of jaundice) and many other fields.
  • LED chips There are four common structural forms of LED chips: (1) Traditional front mounting (horizontal structure): P electrodes and N electrodes are arranged on the same side of the chip, and the disadvantages are poor heat dissipation, uneven current distribution of transparent electrodes, and low light extraction efficiency. Not high; (2) Flip Chip structure (Flip Chip): The front chip is placed upside down on a substrate with good electrical and thermal conductivity, so that the light-emitting epitaxial layer with relatively concentrated heat generation is closer to the heat dissipation component, so that most of the heat is exported through the substrate.
  • Traditional front mounting horizontal structure
  • P electrodes and N electrodes are arranged on the same side of the chip, and the disadvantages are poor heat dissipation, uneven current distribution of transparent electrodes, and low light extraction efficiency. Not high
  • Flip Chip structure Flip Chip
  • the electro-optical conversion efficiency is mainly composed of three parts: electron injection efficiency, internal quantum efficiency and light export efficiency.
  • the electron injection efficiency is mainly related to the internal series resistance and parallel resistance of the device.
  • the series resistance is mainly composed of metal-semiconductor contact resistance, semiconductor lateral diffusion resistance, metal grid line resistance and the resistance of the semiconductor epitaxial layer in the PN direction; and the resistance is mainly related to the leakage inside and at the edge of the device.
  • the internal quantum efficiency is mainly related to the internal quantum structure of the device, such as the geometric characteristics and energy band characteristics of quantum wells, quantum wires, and quantum dots, as well as the defect density inside the quantum well, and is closely related to the operating temperature of the device.
  • the temperature of optoelectronic devices With an increase of 1°C, the conversion efficiency decreases by about 1%.
  • the PN junction of the diode usually maintains a relatively high temperature, from 50°C to 120°C. Every time the temperature rises by 10°C, the luminous flux will attenuate by 1%, and the LED light-emitting wavelength will drift by 1-2nm. Therefore, if the chip heat cannot be discharged in time, stable light output will not be obtained.
  • the light derivation rate is limited by the optical refractive index of the semiconductor material on the light emitting surface of the device. Taking gallium indium phosphide (GaInP) as an example, the refractive index in the red light band is about 3.3, the total reflection angle of the light emitting surface is less than 16 degrees, and the light export efficiency is about 2.5%.
  • Patent Document 1 a method for manufacturing an optoelectronic semiconductor chip and an optoelectronic semiconductor chip are disclosed.
  • the technical solution is to provide a recess extending through the active region on the semiconductor layer sequence, cover the semiconductor layer sequence with a metal reinforcement layer and at least partially fill the recess, so that in the lateral direction, the metal reinforcement layer in the recess is at least Partially surrounds the semiconductor body.
  • the technical effect produced in this way is to transfer the surface electrodes to the back, eliminate the light blocking effect of the surface metal electrodes, and use the metal surface to reflect photons.
  • the light extraction efficiency has been improved, it is still not enough; moreover, the heat dissipation effect, current congestion and The quantum efficiency of electro-optical conversion still has a lot of room for improvement.
  • Patent Document 2 an N-type GaN layer, a light-emitting layer MQW, a P-type GaN layer, a transparent conductive film, a non-conductive high-reflection film, and conductive holes running through it are disclosed from top to bottom; N-type ohmic contact electrodes Although the column is filled with conductive holes, although the heat dissipation effect has been improved, it is still not enough; the problems of current congestion, quantum efficiency of electro-optical conversion, and sidewall light escape have not been solved.
  • Patent Document 1 ZL201880023704.7 Chinese Invention Patent Application Publication
  • Patent document 2 ZL201310096118.4 Chinese invention patent application publication
  • the purpose of the present invention is to propose a thin-film semiconductor chip structure different from the prior art, and name it "optical grid structure".
  • the structure is obviously different from the traditional front-mount (horizontal structure), flip-chip, vertical and thin-film flip-chip structures, which can greatly improve the electron injection efficiency, the quantum efficiency of internal photoelectric conversion, the internal reflection effect and the heat dissipation effect, and enhance its light guiding effect. , thermal conductivity and electrical conductivity in three aspects.
  • a thin-film semiconductor chip structure which is characterized in that it contains at least one optical grid; the at least one optical grid includes a metal substrate and a metal sidewall used as an electrode, and the metal lining The bottom and the metal sidewall are insulated and connected to each other to form an optical reflective cavity; the first transparent conductive layer covers the top of the cavity; and the first transparent conductive layer is electrically connected to the metal sidewall; and , at least one photoelectric conversion layer is disposed in the cavity; the at least one photoelectric conversion layer is connected in series between the metal substrate and the first transparent conductive layer, and is insulated from the metal sidewall.
  • the metal substrate is a P-type metal used as a positive electrode, and the metal sidewall is an N-type metal used as a negative electrode; or, the metal lining The bottom is an N-type metal used as a negative electrode, and the metal sidewall is a P-type metal used as a positive electrode.
  • the surface of the metal side wall in the cavity is covered with an electrical insulating layer.
  • the metal sidewall is embedded in the metal substrate.
  • the metal substrate includes a semiconductor metal contact layer, a metal support layer and a heat conduction layer sequentially from top to bottom.
  • the included angle between the metal sidewall surface in the at least one optical cell and the metal substrate is an obtuse angle.
  • the metal sidewall surface in the at least one optical lattice is a random rough surface.
  • the electrical insulation layer is mainly composed of silicon oxide, silicon nitride, aluminum oxide, ethylene-tetrafluoroethylene copolymer ETFE, polyethylene terephthalate PET, One or more compositions of polypropylene PP or polyimide PI.
  • the thickness of the metal sidewall and the metal substrate ranges from 10 ⁇ m to 300 ⁇ m.
  • the main composition of the semiconductor metal contact layer is one or more of gold, palladium, silver, platinum, aluminum, indium, copper, nickel, titanium;
  • the main composition of the metal support layer is one or more of copper, silver, aluminum, gold, platinum, molybdenum, nickel, chromium;
  • the main composition of the heat conduction layer is copper, silver, aluminum, gold, platinum, molybdenum, One or more of nickel and chromium.
  • the thickness of the semiconductor metal contact layer ranges from 10 nm to 300 nm.
  • more than two optical lattices are arranged to form an optical lattice array, wherein the metal substrates of each optical lattice are electrically connected to each other, and each of the optical lattices is electrically connected to each other.
  • the metal sidewalls of the optical lattice are electrically connected to each other.
  • the optical grid array is in a honeycomb shape.
  • the size of each light emitting surface of each of the light grids in the light grid array ranges from 10 ⁇ m to 500 ⁇ m.
  • the at least one photoelectric conversion layer has a PN junction, a multi-quantum well structure, a double-sided heterogeneous PN junction, a multi-quantum wire structure, a multi-quantum dot structure or a superlattice structure.
  • the first transparent conductive layer and the metal substrate in the at least one optical grid are connected in series from top to bottom and are all connected to the
  • the metal sidewalls are insulated to provide: the first current confinement layer, the at least one photoelectric conversion layer, the second current confinement layer, the second transparent conductive layer, and the roughening layer.
  • the upper surface of the first transparent conductive layer is covered with an anti-reflection layer.
  • the main composition of described anti-reflection layer is nitride, oxide, selenide, sulfide or ethylene-tetrafluoroethylene copolymer ETFE, polyethylene terephthalate One or more of diester PET, polypropylene PP, polyimide PI.
  • the main composition of the first current confinement layer and the second current confinement layer is: Al x Ga 1-x in III-V nitride semiconductor devices N, Al x Ga y ln 1-xy N, Al x In 1-x P, Al x Ga 1-x P, Al x Ga y In 1-xy P, III-V phosphide semiconductor devices Al x Ga 1-x As, Al x Ga y ln 1-xy As in group V arsenide semiconductor devices, Al x Ga 1-x Sb, Al x Ga y ln 1 in III-V group antimonide semiconductor devices -xy Sb, Al x Ga 1-x As z P 1-z , Al x Ga y ln 1-xy As z P 1-z in III-V arsenic-phosphide semiconductor devices, or III-V arsenic-antimony Al x Ga 1-x As z Sb 1-z , Al x Ga y l
  • the main composition of the first transparent conductive layer is: indium tin oxide, gallium indium zinc oxide, zinc oxide, Al x in III-V nitride semiconductor devices Ga 1-x N, Al x Ga y ln 1-xy N, Al x In 1-x P, Al x Ga 1 -x P, Al x Ga y In 1-xy in III-V phosphide semiconductor devices P, Al x Ga 1-x As, Al x Ga y ln 1-xy As in III-V arsenide semiconductor devices, multiple Al x Ga 1-x Sb, Al x in III-V antimonide semiconductor devices Ga y ln 1-xy Sb, Al x Ga 1-x As z P 1-z , Al x Ga y ln 1-xy As z P 1-z in III-V arsenic phosphide semiconductor devices, or III- Al x Ga 1-x As z Sb 1-z , Al x
  • the main composition of the second transparent conductive layer is: AlxGa1 -xN , AlxGayln1 in III-V nitride semiconductor devices -xy N, Al x In 1-x P in III-V phosphide semiconductor devices, Al x Ga 1-x P, Al x Ga y In 1-xy P in III-V arsenide semiconductor devices Al x Ga 1-x As, Al x Ga y ln 1-xy As, Group III-V antimonide Al x Ga 1-x Sb, Al x Ga y ln 1-xy Sb, Group III-V in semiconductor devices Al x Ga 1-x As z P 1-z , Al x Ga yln 1-xy As z P 1-z in arsenic phosphide semiconductor devices, Al x Ga 1 in III-V arsenic antimonide semiconductor devices -x As z Sb 1-z ,Al x Ga y
  • the at least one photoelectric conversion layer has a multi-quantum well structure, and its main composition is: GaInP, AlGaInP, AllnP, AlGaN, AlInGaN, GaN, InGaN, InGaAs or AlGaInAs.
  • a laser with at least one thin-film semiconductor chip structure is provided.
  • the at least one optical lattice contains at least one laser light-emitting junction
  • the at least one laser light-emitting junction includes, between the first transparent conductive layer and the metal substrate, from top to bottom
  • the first current confinement layer, the at least one photoelectric conversion layer, and the second current confinement layer are arranged in series and insulated from the metal sidewall.
  • the at least one laser light-emitting junction in the at least one optical cell and the metal substrate are arranged in series from top to bottom and are all insulated from the metal sidewall: the first Two transparent conductive layers and a DBR reflective layer.
  • the upper surface of the first transparent conductive layer is covered with an anti-reflection layer and a DBR layer sequentially from top to bottom.
  • the at least one photoelectric conversion layer has a multi-quantum well structure, and its main composition is InGaAs and AlGaAs.
  • a photovoltaic cell having any one of the thin-film semiconductor chip structures, wherein the at least one photoelectric conversion layer has a photon absorption structure.
  • At least one photovoltaic cell photoelectric absorption junction is contained in the at least one optical grid, and the at least one photovoltaic cell photoelectric absorption junction includes, between the first transparent conductive layer and the metal substrate, The first passivation layer, the at least one photoelectric conversion layer, and the second passivation layer are arranged in series from top to bottom and are all insulated from the metal sidewall.
  • the photoelectric absorption junction of the at least one photovoltaic cell in the at least one optical cell and the metal substrate are arranged in series from top to bottom and are all insulated from the metal sidewall :
  • the second transparent conductive layer and the roughening layer are arranged in series from top to bottom and are all insulated from the metal sidewall :
  • the upper surface of the first transparent conductive layer is covered with an anti-reflection layer.
  • the at least one photoelectric conversion layer is mainly composed of GaAs.
  • the honeycomb structure has a three-dimensional
  • the reflective structure only retains the light emitted from the surface of the device, and at the same time eliminates the shading effect of the metal electrodes on the surface, and the anti-reflection structure of the multi-layer structure on the surface improves the light extraction efficiency.
  • the three-dimensional metal heat conduction structure provides an excellent heat conduction path.
  • the heat conduction efficiency of the three-dimensional lattice structure can reach more than three times that of the planar metal substrate structure, which can greatly reduce the internal temperature of the device.
  • When working under high current density conditions can effectively export the heat inside the device, which is conducive to the long-term high-efficiency and high-reliability work of the device.
  • the process of converting light energy to electrical energy it can effectively reduce the operating temperature of the device and suppress the non-radiative recombination heating of electron-hole pairs.
  • the radiation recombination efficiency of electrons and holes is improved, thereby improving the conversion efficiency from electric energy to light energy; when light energy is converted into electric energy, dark current can be reduced, and electron-hole pairs can be completed more efficiently separation, thereby improving the conversion efficiency from light energy to electrical energy.
  • the first transparent conductive layer that is electrically connected to the side wall of the metal can achieve extremely low internal resistance of the device, realize high-efficiency electrical injection, and effectively solve the problem of current congestion, and the electrons flow to the metal
  • the side walls make the current evenly distributed and improve the current expansion or collection efficiency.
  • the device adopting the optical lattice structure forms an optical lattice array, thereby improving the overall energy conversion efficiency.
  • thin-film optoelectronic devices with a lattice structure use a metal substrate as a supporting structure, which has excellent flexibility and bendability. Compared with photoelectric devices conventionally prepared on rigid substrates (such as silicon substrates, gallium arsenide substrates, and alumina substrates), it has a wider and more flexible application scenario.
  • Fig. 1 is an exemplary embodiment of the present invention, adopts the cross-sectional schematic diagram of the thin-film semiconductor chip of lattice structure
  • Fig. 2A is an exemplary embodiment of the present invention showing a schematic cross-sectional view of photons reflected in an optical reflective cavity of an optical grid;
  • Fig. 2B is an exemplary embodiment of the present invention showing a three-dimensional schematic diagram of photon reflection in the optical reflective cavity of the optical grid
  • Fig. 3 shows an exemplary embodiment of the present invention: when the photoelectric conversion layer in the optical grid converts electrical energy into light energy, a schematic diagram of electron-hole pair radiation recombination;
  • Fig. 4 is a photoelectric conversion layer shown in an exemplary embodiment of the present invention, a cross-sectional schematic diagram composed of two photoelectric conversion layers;
  • 5A is a schematic diagram showing that the first transparent conductive layer of the optical grid improves the current spreading efficiency according to an exemplary embodiment of the present invention
  • Fig. 5B is an exemplary embodiment of the present invention showing that the first transparent conductive layer of the optical lattice improves the second schematic diagram of the current spreading efficiency
  • FIG. 6 is a schematic cross-sectional view of a thin-film semiconductor chip using a lattice structure shown in another exemplary embodiment of the present invention.
  • Fig. 7 is another exemplary embodiment of the present invention showing a schematic diagram of a honeycomb grid array composed of hexagonal grids in cross section;
  • Fig. 8 shows an exemplary embodiment of the present invention, a schematic cross-sectional view of a thin-film semiconductor chip with a lattice structure for a laser
  • FIG. 9 is a schematic cross-sectional view of a thin-film semiconductor chip with a lattice structure for a photovoltaic cell according to an exemplary embodiment of the present invention.
  • Fig. 10 is an exemplary embodiment of the present invention showing: when the photoelectric conversion layer in the optical grid converts light energy into electrical energy, a schematic diagram of the separation of electron-hole pairs under the action of a built-in electric field;
  • Fig. 11A shows another exemplary embodiment of the present invention, a schematic cross-sectional view of a thin-film semiconductor chip with a lattice structure for a single-junction photovoltaic cell;
  • FIG. 11B is a schematic cross-sectional view of a thin-film semiconductor chip with a lattice structure used in a multi-junction photovoltaic cell according to yet another exemplary embodiment of the present invention.
  • the thin-film semiconductor chip structure disclosed by the present invention is obviously different from the existing traditional front-mount (horizontal structure), flip-chip structure, vertical structure (also called vertical thin-film structure) and thin-film flip-chip structure, and the inventor named it " Lattice Structure".
  • this structure one of the P-type metal and the N-type metal used as an electrode is used as a substrate, and the other metal is used as a metal side wall.
  • the metal side wall is insulated and connected to the metal substrate to form a three-dimensional optical reflection cavity.
  • the top of the optical reflective cavity is covered with a first transparent conductive layer, and at least one photoelectric conversion layer is arranged in the optical reflective cavity to form an "optical lattice"; correspondingly, this structure is an "optical lattice structure".
  • the metal sidewall and the metal substrate are both highly reflective layers relative to photons; under the reflection of the closed optical reflection cavity, photons can only enter and exit through the first transparent conductive layer on the top of the optical lattice.
  • the photoelectric conversion layer is a thin-film semiconductor device structure that converts light energy and electrical energy.
  • the optical grid becomes a light-emitting unit, which can be used in LEDs, lasers, and optical amplifiers;
  • the photoelectric conversion layer is a thin-film semiconductor that converts light energy into electrical energy
  • the optical grid becomes the generating unit of electric energy, which can be used in photovoltaic cells, including laser photovoltaic cells and solar photovoltaic cells.
  • the thin-film semiconductor chip structure according to Embodiment 1 of the present invention may be composed of one or more optical lattices 100 .
  • Optical lattice 100 comprises, as the metal substrate 108 of electrode and metal side wall 109, metal substrate 108 and metal side wall 109 are mutually insulated and connected to form optical reflection cavity 1 (as shown in Figure 2A and 2B); The top of the cavity 1 is covered with the first transparent conductive layer 102, and the first transparent conductive layer 102 is electrically connected with the metal sidewall 109, so that the optical lattice 100 forms a closed structure.
  • the photons can only pass through the first transparent conductive layer 102 on the top of the optical lattice and exit.
  • a photoelectric conversion layer 104 capable of converting light energy and electric energy into each other is arranged in the optical reflective cavity 1 .
  • the photoelectric conversion layer 104 is connected in series between the metal substrate 108 and the first transparent conductive layer 102 , and the first transparent conductive layer 102 is electrically connected to the metal sidewall 109 .
  • the photoelectric conversion layer 104 is insulated from the metal sidewall 109 through the electrical insulating layer 1091 covered on the surface of the metal sidewall 109 in the cavity 1 .
  • the electrical insulating layer 1091 is mainly made of insulating light-transmitting oxide or nitride (such as silicon oxide, silicon nitride, aluminum oxide), polymeric organic matter (ethylene-tetrafluoroethylene copolymer ETFE, polyethylene terephthalate PET, poly Propylene PP, polyimide PI, etc.) one or more components to obtain better insulation performance. It should be noted that the polymeric organic compound must be made of colorless materials to avoid the absorption of photons.
  • the photoelectric conversion layer 104 can adopt a PN junction made by a thin-film semiconductor manufacturing process. As shown in FIG. The region is injected into the active region for recombination. If a conventional homogeneous PN junction semiconductor device structure is used, there will be a large number of carriers that cannot recombine in the active region to generate photons, and the electrical energy will be dissipated through other forms of heat energy, making the conversion of electrical energy into light energy more efficient. low.
  • the photoelectric conversion layer 104 adopts a multi-quantum well structure.
  • the multiple quantum well structure is a region where electron-hole radiative recombination occurs, usually using a single or multiple quantum well structure.
  • Quantum well itself is an electronic band structure with quantum confinement effect.
  • the optical lattice structure can improve the quantum efficiency, and its good heat dissipation effect can effectively reduce the heat loss, so that more carriers can recombine in the active area of the multi-quantum well (MQW) structure, generate photons, and use optical reflection Cavity 1 avoids sidewall escape of photons and substrate absorption.
  • MQW multi-quantum well
  • red and yellow light with a wavelength of 570nm to 680nm can be generated.
  • the well region of the quantum well is made of Ga 0.5 In 0.5 P material
  • the thickness of the well is 3-10nm
  • the barrier region of the quantum well is made of Al 0.5 Ga 0.25 In 0.25 P
  • the barrier region is 10-30nm.
  • the single quantum well includes two potential barrier regions and one well region, and the cumulative thickness is 30-50nm.
  • Multi-quantum wells are the periodic repetition of one layer of wells and one layer of potential barriers, and the superposition of single quantum wells.
  • the total thickness is usually below 1000nm.
  • the optical lattice structure can greatly reduce the consumption of electrical energy in the form of heat energy by non-radiative recombination carriers, and improve energy conversion efficiency, quantum efficiency, and light extraction rate.
  • the photoelectric conversion layer 104 may also adopt other semiconductor structures that convert electrical energy into light energy, such as double-sided hetero-PN junctions, multi-quantum wire structures, multi-quantum dot structures, superlattice structures, and the like.
  • the photoelectric conversion layer 104 may be a multilayer structure.
  • photoelectric conversion layers there are two layers of photoelectric conversion layers, which are multi-quantum well layer 1041 and double-sided heterogeneous PN junction layer 1042 from top to bottom, and are connected with each other by tunnel junction; the two can also exchange positions, That is, the double-sided hetero-PN junction layer 1041 and the multi-quantum well layer 1042 .
  • the metal substrate 108 serves as the positive electrode P-type metal and has four core functions.
  • the first is to provide metal electrodes to realize the electrical connection between the device and the external power supply; the second is to achieve high optical reflectivity, so that the photons generated inside the device can all be reflected from the bottom of the device; the third is to provide an excellent thermal conductor.
  • the fourth is to provide reliable mechanical support for the entire thin-film device.
  • the thickness of the metal electrode can be adjusted according to the size of the device, and the value range is usually 10 ⁇ m to 300 ⁇ m.
  • the metal substrate is followed by a semiconductor metal contact layer, a metal support layer and a heat conduction layer from top to bottom.
  • the thickness of the semiconductor metal contact layer is between 10 and 300nm, and it is mainly composed of metal materials that are favorable for forming ohmic contacts and high reflectivity, such as gold, palladium, silver, platinum, aluminum, indium, copper, nickel, One or more of titanium;
  • the metal support layer is usually composed of one or more of copper, silver, aluminum, gold, platinum, molybdenum, nickel, chromium, and the metal support layer and the heat conduction layer Various compositions.
  • the heat conduction layer usually consists of the metal support layer and the heat conduction layer mainly composed of one or more of copper, silver, aluminum, gold, platinum, molybdenum, nickel, and chromium.
  • Metal substrate 108 as a supporting structure, has excellent flexibility and bendability; it has more extensive and flexible application scenarios.
  • the metal sidewall 109 is used as the negative electrode N-type metal, electrically connected to the first transparent conductive layer 102, extends through the entire multi-quantum well light-emitting layer 104, and is electrically insulated by a transparent insulating material and the penetrated epitaxial structure layer.
  • the metal sidewall 109 has three core functions: first, providing metal electrodes to realize the electrical connection between the device and the external power supply. Second, realize high optical reflectivity, and form an optical reflective cavity 1 with the side walls of the optical lattice structure closed.
  • the metal sidewall 109 and the metal substrate 108 form a light lattice structure in which light can only be emitted from the upper surface, so that all photons generated inside the device can be exported from the surface of the device.
  • the surface of the metal side wall 109 in the optical lattice 100 can be a plane or a curved surface to reflect the photons; a random rough surface can also be selected to scatter the photons (see “Random Rough Surface”) The Basic Theory and Method of Scattering", Science Press, ISBN: 9787030261243); and, the angle between the surface of the metal side wall 109 in the optical grid 100 and the upper surface of the metal substrate 108 is an obtuse angle, which is beneficial for photons to pass through the optical reflection cavity Reflection, improve light efficiency.
  • the optical lattice 100 realizes high optical reflectivity, realizes that the photons generated inside the device can be reflected by the metal substrate 108 and the metal sidewall 109, and avoids The energy loss caused by photons escaping from the sidewall and being absorbed by the substrate; on the other hand, due to the inherent characteristics of metal materials, the three-dimensional metal heat conduction structure of the optical lattice 100 provides an excellent heat conduction path, and the thermal conductivity of the three-dimensional optical lattice structure It can reach more than three times that of the planar metal substrate structure, and can greatly reduce the internal temperature of the device.
  • the optical grid 100 When working under high current density conditions, it can effectively export the heat inside the device, which is conducive to the long-term high-efficiency and high-reliability work of the device;
  • the optical grid 100 has more extensive and flexible applications than optoelectronic devices with rigid substrates (such as silicon substrates, gallium arsenide substrates, and aluminum oxide substrates). Scenario;
  • the electron injection efficiency is closely related to the series resistance.
  • the optical grid structure uses the metal substrate 108 and the metal sidewall 109, which is more conducive to reducing the series resistance than the traditional grid line structure that requires semiconductor materials to conduct electricity.
  • the first transparent conductive layer 102 can make the electrons from the metal sidewall 109 expand on the light-emitting plane, effectively solving the current problem. Congestion problem, improve current expansion efficiency.
  • the charge flows to the metal sidewalls, so that the current is evenly distributed.
  • the thickness of the first transparent conductive layer 102 is preferably between 0.5 ⁇ m and 5 ⁇ m, which needs to be determined according to the lateral expansion distance of the optical grid, that is, the lateral distance of the space in the optical reflection cavity 1, the current density of the light-emitting device and other factors. Resistivity (thickness and doping concentration) of the layer material.
  • the conductive layer does not absorb photons generated by the light-emitting layer of the device, and the band gap (E g ) of the transparent conductive layer is required to be greater than the energy (E ph ) of photons generated by the device.
  • the first transparent conductive layer 102 is usually selected: transparent oxide conductors such as indium tin oxide, gallium indium zinc oxide, and zinc oxide prepared by evaporation, sputtering, chemical deposition, etc., or wide bandgap semiconductors, such as III-V Al x Ga 1-x N, Al x Ga y ln 1-xy N are used in group nitride semiconductor devices, Al x In 1-x P, Al x Ga 1-x are used in III-V phosphide semiconductor devices P, Al x Ga y In 1-xy P; Al x Ga 1-x As, Al x Ga y ln 1-xy As in III-V arsenide semiconductor devices, Al x Ga y ln 1-xy As in III-V antimonide semiconductor devices Al x Ga 1-x Sb, Al x Ga y ln 1-xy Sb are used in Al x Ga 1-x Sb, Al x Ga y ln 1-xy Sb, Al x Ga 1-x
  • Embodiment 2 is another specific implementation based on Embodiment 1.
  • the optical grid 200 uses an epitaxial thin film layer to further improve the conversion efficiency of converting electrical energy into light energy, and finally increase the light extraction rate.
  • the thin film layer with an epitaxial structure refers to a thin film layer grown on a substrate using an epitaxial process.
  • the photoelectric conversion layer adopts a multi-quantum well light-emitting layer 204 that converts electrical energy into light energy, and sequentially forms an electrical connection in series between the first transparent conductive layer 202 and the metal substrate 208 from top to bottom:
  • the first current confinement layer 203, the multi-quantum well light-emitting layer 204, the second current confinement layer 205, the second transparent conductive layer 206 and the roughened layer 207 must be insulated from the metal sidewall 209, and must be insulated on the first transparent conductive layer 202
  • the upper surface of the anti-reflection layer 201 is covered, and photons are emitted from the upper surface 2011 of the anti-reflection layer 201, so that the light extraction rate of the thin-film semiconductor adopting the optical lattice structure is significantly improved.
  • the cross-sectional shape of the light grid in Embodiment 1 shown in FIG. 5A is hexagonal, which is only one of the preferred situations.
  • the lattice cross-section can be any closed geometric shape.
  • the first current confinement layer 203 and the second current confinement layer 205 are made of AlGalnP or AllnP material, and are arranged symmetrically on both sides of the multi-quantum well light-emitting layer 204, with a preferred thickness of 80-150 nm.
  • the first current confinement layer 203 and the second current confinement layer 205 jointly form an electron-hole space confinement structure, which increases the recombination probability of electrons and holes, thereby improving the internal quantum efficiency of the optoelectronic device.
  • the lattice constant of the first current confinement layer 203 and the second current confinement layer 205 is consistent with the lattice constant of the epitaxial substrate, and the material forbidden band width (E g ) is greater than the photon energy (E g ) produced by the multiple quantum well light-emitting layer 204. pH ).
  • the first current confinement layer 203 and the second current confinement layer 205 adopt Al x Ga 1-x N and Al x Ga yln 1-xy N in the III-V group nitride semiconductor device, and Al x Ga yln 1-xy N in the III-V group phosphide semiconductor device.
  • Al x In 1-x P, Al x Ga 1-x P, Al x Ga y In 1-xy P are used in devices, Al x Ga 1-x As, Al x Ga 1-x As, Al x are used in III-V arsenide semiconductor devices Ga y ln 1-xy As, Al x Ga 1-x Sb in III-V antimonide semiconductor devices, Al x Ga yln 1-xy Sb, Al in III-V arsenic phosphide semiconductor devices x Ga 1-x As z P 1-z , Al x Ga y ln 1-xy As z P 1-z , or Al x Ga 1-x As z Sb 1 in III-V arsenic antimonide semiconductor devices -z ⁇ Al x Ga y ln 1-xy As z Sb 1-z , where x, y is the molar ratio between group III atoms; z is the molar ratio between group V atoms, and the values of x, y, z
  • the well region of the quantum well is made of Ga 0.5 In 0.5 P material, the thickness of the well is 3-10nm, and the barrier region of the quantum well is made of Al 0.5 Ga 0.25 In 0.25 P, the thickness of the barrier region is 10-30nm.
  • the single quantum well includes two potential barrier regions and one well region, and the cumulative thickness is 30-50nm.
  • Multi-quantum wells are the periodic repetition of one layer of wells and one layer of potential barriers, and the superposition of single quantum wells. The total thickness is usually below 1000nm.
  • the internal quantum efficiency of epitaxially grown quaternary AlGaInP-based light-emitting PN diodes can exceed 95%.
  • the second transparent conductive layer 206 requires a semiconductor with a wide band gap (E g ) greater than the energy (E ph ) of photons generated by the device, such as Al x in III-V nitride semiconductor devices.
  • E g wide band gap
  • Al x in III-V nitride semiconductor devices Ga 1-x N, Al x Ga y ln 1-xy N, Al x In 1-x P, Al x Ga 1 -x P, Al x Ga y In 1-xy in III-V phosphide semiconductor devices P, Al x Ga 1-x As, Al x Ga y ln 1-xy As in III-V arsenide semiconductor devices, Al x Ga 1-x Sb, Al x in III-V antimonide semiconductor devices Ga y ln 1-xy Sb, Al x Ga 1-x As z P 1-z , Al x Ga y ln 1-xy As z P 1 -z in III-V arsenic pho
  • the main purpose of the roughening layer 207 is to assist the photons to generate random reflection angles in the back reflection layer, thereby assisting the surface of the photonic device to overcome the maximum reflection angle and lead out from the inside of the device to become an effective luminous output.
  • the roughened relative size is half of the effective wavelength, optical diffraction phenomenon can be generated and better light extraction efficiency can be achieved.
  • the surface of the first transparent conductive layer 202 may be roughened by means of chemical etching or etching, so as to form a micron-level roughness on the surface and improve light extraction efficiency.
  • the anti-reflection layer 201 covers the upper surface of the first transparent conductive layer 202 and is an optical anti-reflection film, usually with a thickness between 100nm and 1000nm, and its optical refractive index is between semiconductor (refractive index 3.0) and air (refractive index 1.0); It is composed of one or more layers of optical medium films with different refractive indices.
  • the optical refractive index decreases from 3.0 layer by layer according to the requirement of realizing the maximum light output angle, and is close to the optical refractive index of air 1.0.
  • the material of optical dielectric film is usually fluoride, nitride, oxide, selenide, sulfide or organic polymer (ethylene-tetrafluoroethylene copolymer ETFE, polyethylene terephthalate PET, polypropylene One or more of PP, polyimide PI, etc.).
  • the metal sidewall 209 is embedded in the metal substrate 208 , and the embedded depth is preferably less than 2000 nm.
  • the whole device is a honeycomb light-emitting structure formed by the aggregation of many optical grids 200.
  • the size of the optical grids in the honeycomb structure can be controlled by photolithography precision; preferably, the size of the light-emitting surface of each optical grid ranges from 10 ⁇ m to 500 ⁇ m, which can Extremely low internal resistance of the device to achieve high efficiency of electrical injection; the honeycomb structure has a three-dimensional reflective structure, which only retains the light emitted from the surface of the device, and at the same time eliminates the shading effect of the metal electrodes on the surface, plus the anti-reflection of the multi-layer structure on the surface Structure, can exceed 95% light extraction efficiency; realize a three-dimensional high-efficiency heat conduction structure, when the honeycomb size is close to the order of magnitude of the thickness of the semiconductor film layer (usually 10 ⁇ m), the heat conduction efficiency of the optical lattice structure is more than 3 times that of the plane metal substrate, The internal temperature of the device can be greatly reduced, and the quantum efficiency of the electro-optical conversion inside the device can be improved.
  • Lattice arrays are very suitable for optoelectronic devices with high energy density and high calorific value, such as: high-power LEDs, lasers, optical amplifiers, laser cells, high-power concentrated solar cells, etc. Combining the above structures, an electro-optical conversion efficiency of more than 80% can be finally realized.
  • the disclosure of the present invention provides an application example of the optical grid structure on the photoelectric device: colored LED.
  • the wavelengths that can emit light with high efficiency are usually concentrated in the blue-green range of 360nm to 540nm, and can be used as the core device of the red, green and blue display.
  • the forbidden band width of AlN, GaN and InN spans from 6.0eV to 1.0eV, and the corresponding wavelength is from 206nm to 1240nm, covering the deep ultraviolet to near infrared band, with the improvement of material preparation technology, the high-efficiency luminescence of AlInGaN material system The range is also further expanded from 360 to 540nm to the short-wave and long-wave directions.
  • the first transparent conductive layer 202 requires that the band gap (E g ) of the conductive layer be greater than the energy (E ph ) of photons generated by the device.
  • E g band gap
  • E ph energy of photons generated by the device.
  • indium tin oxide, gallium indium zinc oxide, zinc oxide, etc. usually prepared by evaporation, sputtering, chemical deposition and other methods.
  • An epitaxial thin film layer is arranged in the optical lattice 200, specifically: the second transparent conductive layer 206 of gallium aluminum nitride AlGaN material, the first transparent conductive layer 206 of gallium aluminum nitride AlGaN material (for example, the Al 0.13 Ga 0.87 N band gap exceeds 3.6eV).
  • the current confinement layer 203 is composed of a multi-quantum well light-emitting layer 204 made of AlGaN material and a second current confinement layer 205 .
  • the multi-quantum well light-emitting layer 204 is usually composed of a GaN/InGaN nanoscale periodic structure, where InGaN is a quantum well region, and the ratio of Ga/In is about 4, which is recorded as In 0.2 Ga 0.8 N, which is generated by electron-hole recombination.
  • the forbidden band width of InGaN material and the energy level splitting and polarization effects of quantum wells jointly determine the central wavelength of the quantum well’s luminescence, and the thickness is usually 3nm to 5nm, where GaN is the quantum barrier region, with a thickness of 10 ⁇ 30nm; it can also be a nanoscale periodic structure of AlInGaN/InGaN; where InGaN is a quantum well region, the thickness is usually 3nm to 5nm, AlInGaN is a quantum barrier region, AlInGaN, the thickness is 10 ⁇ 30nm, which can offset the InGaN quantum well The polarization effect of the layer has a higher internal quantum efficiency.
  • the disclosure of the present invention provides another aspect of an application embodiment of an optical grid structure on an optoelectronic device, an LED.
  • the wavelengths that can usually emit light with high efficiency are concentrated in the range of red light and near-infrared light from 700nm to 2000nm, which can be used in red light medical treatment, infrared imaging and other fields.
  • the first transparent conductive layer 202 requires that the band gap (E g ) of the conductive layer be greater than the energy (E ph ) of photons generated by the device.
  • E g indium tin oxide, gallium indium zinc oxide, zinc oxide, etc.
  • indium tin oxide, gallium indium zinc oxide, zinc oxide, etc. usually prepared by evaporation, sputtering, chemical deposition, etc., can also be AlGaInAs system, generally prepared by epitaxy technology, including organometallic meteorological epitaxy (MOCVD) and Molecular Beam Epitaxy (MBE).
  • MOCVD organometallic meteorological epitaxy
  • MBE Molecular Beam Epitaxy
  • the epitaxial thin film layer is set in the optical grid 200, specifically: the second transparent conductive layer 206, the first current confinement layer 203 (such as Al 0.5 Ga 0.5 As), the multi-quantum well light-emitting layer 204 and the second current confinement layer 205 (such as Al 0.5 Ga 0.5 As).
  • the multi-quantum well light-emitting layer 204 is usually composed of In 0.14 Ga 0.86 As/Al 0.22 Ga 0.88 As nanoscale periodic structure, wherein In 0.14 Ga 0.86 As is a quantum well region, which is a region where electron-hole recombination generates photons, The forbidden band width of the InGaAs material and the energy level splitting of the quantum well jointly determine the central wavelength of the quantum well’s luminescence.
  • Al 0.22 Ga 0.88 As is the quantum barrier region, the thickness is 10-30nm, and the number of quantum well periods is 3 to 30 indivual.
  • III-V antimonide semiconductor material system Al x Ga y ln 1-xy Sb
  • III-V arsenic phosphide semiconductor system Al x Ga y ln 1-xy As z P 1-z
  • III-V group arsenic antimonide semiconductor material system Al x Ga y ln 1-xy As z Sb 1-z
  • x, y is the molar ratio between group III atoms
  • z is the molar ratio between group V atoms Ratio, where the value range of x, y, and z is a closed interval greater than or equal to 0 and less than or equal to 1.
  • Such materials are usually able to emit light with high efficiency in the mid-infrared range of 2500nm to 4000nm, and can be used for long-range infrared detection and other fields.
  • the metal substrate 208 is used as the positive electrode P-type metal; the metal sidewall 209 is used as the negative electrode N-type metal. Based on the idea of the present invention, the metal substrate 208 can also be used as the negative electrode N-type metal; the metal sidewall 209 can be used as the positive electrode P-type metal.
  • the photoelectric conversion layer uses the multi-quantum well light-emitting layer 204 that converts electrical energy into light energy. The N-region surface of the light-emitting layer 204 faces the N-type metal substrate 208 .
  • the thin-film semiconductor chip structure can be composed of one or more optical lattices 300, which are used as high-power laser generators or optical amplifiers.
  • the solution provided by the optical grid structure of the present disclosure fully meets these three requirements.
  • the closed optical lattice structure avoids photon escape and photon loss absorbed by the substrate; the optical reflective cavity provides a good resonant cavity for laser oscillation; in the process of energy conversion, it reduces the thermal energy loss of non-radiative recombination, greatly improves the quantum efficiency, and can Provides a higher number of particles for inversion.
  • DBR Bragg reflector layer
  • the upper surface of the first transparent conductive layer 302 is covered with an anti-reflection layer 310 and a Bragg reflector layer (DBR layer for short) 301 from top to bottom.
  • DBR can be a periodic structure of two transparent optical media with a large difference in refractive index, such as titanium oxide/aluminum oxide film (TiO x /AlO y ), the thickness of each layer is a quarter of the effective wavelength of the laser output light, or it can be It is an AlGaAs/GaAs periodic structure, and the thickness of each layer is a quarter of the effective wavelength of the laser output light.
  • the first transparent conductive layer 302 of the optical lattice 300 requires that the band gap (E g ) of the conductive layer is greater than the energy (E ph ) of photons generated by the device.
  • ITO indium tin oxide
  • IGZO gallium indium zinc oxide
  • ZnO zinc oxide
  • the higher AlGaInP semiconductor material system than the AlGaInAs system is generally prepared by epitaxial technology, including organometallic meteorological epitaxy (MOCVD) and molecular beam epitaxy (MBE).
  • the first transparent conductive layer 302 is electrically connected to the metal sidewall 309 .
  • a laser light-emitting junction is arranged in the optical lattice 300 .
  • the laser light-emitting junction includes: a first current confinement layer 303 of AlGaAs semiconductor material (such as Al 0.5 Ga 0.5 As), a multi-quantum well light-emitting layer 304 of AlGaAs semiconductor material, and a second current confinement layer 305 connected in series from top to bottom, and all Insulated from the metal sidewall 309 .
  • the multi-quantum well light-emitting layer 304 is InGaAs and AlGaAs, and it can be composed of In 0.14 Ga 0.86 As/Al 0.22 Ga 0.88 As nanoscale periodic structure for light of a specific wavelength, where In 0.14 Ga 0.86 As is the quantum well region , is the area where electron-hole recombination generates photons, and the central wavelength of the quantum well’s light emission is determined by the forbidden band width of the InGaAs material and the energy level splitting of the quantum well, where Al 0.22 Ga 0.88 As is the quantum barrier region, and the thickness is in About 10-30nm, the period number of quantum well is 3-30.
  • a second transparent conductive layer 306 of AlGaAs material and a distributed Bragg reflector (Distributed Bragg Reflector), referred to as DBR reflector, are also connected in series from top to bottom with the laser light-emitting junction in the optical grid 300 Layer 307.
  • the DBR reflective layer 307 is composed of AlGaAs/GaAs periodic structure.
  • the DBR layer usually has a structure in which optical medium materials with large refractive index differences are arranged periodically according to the thickness of 1/4 effective wavelength, and the number of periods is 3 to 30; it has extremely high reflectivity for monochromatic height.
  • the first current confinement layer, the photoelectric conversion layer with multi-quantum well structure, double-sided heterogeneous PN junction, multi-quantum wire structure, multi-quantum dot structure or superlattice structure and the second current confinement layer form The single-junction structure of the laser light-emitting junction; in order to improve the efficiency of the laser, multiple laser light-emitting junctions can be used to work in series.
  • a multi-junction laser light emitting unit is often a double-junction or triple-junction structure.
  • the present disclosure provides a "single-junction photovoltaic cell" of an embodiment of a thin-film semiconductor chip structure.
  • the thin-film semiconductor chip with optical grid structure can also be applied to convert light energy into electrical energy, that is, the photovoltaic effect.
  • the process is generally divided into three stages: (1) The electrons in the semiconductor absorb photons from external light sources (sun, laser, various fluorescent lights), and the photons excite the electrons to generate electron-hole pairs, and these non-equilibrium carriers have enough (2) The generated non-equilibrium carriers complete the separation of electron-hole pairs under the action of the built-in electric field, and the electrons are concentrated on the side of the N-type semiconductor, and the holes are concentrated on the P-type semiconductor On one side, opposite charges accumulate on both sides of the PN junction, thereby generating photoelectromotive force; (3) Connect the PN junction with a wire to form a current and supply power to the load through an external circuit to obtain effective power output.
  • the optical lattice structure can reduce the dark current and complete the separation of electron-hole pairs more efficiently, thereby improving the conversion efficiency from light energy to electrical energy in the photovoltaic effect.
  • the thin-film semiconductor chip structure can be composed of one or more optical grids 400, which can be used as high-power laser cells and high-magnification solar cells.
  • optical grids 400 which can be used as high-power laser cells and high-magnification solar cells.
  • gallium arsenide single-junction cells with an absorption wavelength range from 300 to 900nm it can be used to absorb high-power laser energy, such as an emission wavelength of 808nm and an energy density above 10W/cm 2 , or a high-power concentrated solar cell,
  • the light concentration ratio is more than 100 times, and the light energy density is also more than 10W/cm 2 .
  • a first transparent conductive layer 402 is disposed on the top of the optical lattice 400, and the forbidden band width (E g ) of the conductive layer is greater than the energy (E ph ) of photons incident on the device.
  • the forbidden band width (E g ) of the conductive layer is greater than the energy (E ph ) of photons incident on the device.
  • ITO indium tin oxide
  • IGZO gallium indium zinc oxide
  • ZnO zinc oxide
  • the first transparent conductive layer 402 is electrically connected to the metal sidewall 409, and the metal substrate 408 and the metal sidewall 409 form an optical reflection cavity.
  • the first transparent conductive layer 402 makes the current evenly distributed, avoids current congestion, improves the current collection efficiency, and facilitates the conversion of light energy into electric energy.
  • a photoelectric conversion layer 404 having a photon absorption structure is disposed in the optical grid 400 . It should be noted that the photon-absorbing structure of the photoelectric conversion layer 404 contains semiconductor materials, which can generate electron excitation, and the electrons can absorb photon energy, which can achieve higher light-to-electricity conversion efficiency. In this embodiment, the photoelectric conversion layer 404 is mainly composed of an N-type GaAs layer and a P-type GaAs layer.
  • the thickness of the N-type GaAs is usually about 100 nm, the doping concentration is above 10 18 cm -3 , and the thickness of the P-type GaAs is usually about 3000 nm. , the doping concentration is 10 17 cm -3 .
  • FIG. 10 shows that the photoelectric conversion layer 404 with a photon absorbing structure is separated under the action of a built-in electric field.
  • this embodiment is based on another embodiment of embodiment 8 "single-junction photovoltaic cell", which further improves the efficiency of converting light energy into electrical energy.
  • Photoelectric absorption junctions of photovoltaic cells are arranged in the optical lattice 500 .
  • the photoelectric absorption junction of a photovoltaic cell is mainly composed of a first passivation layer, a photoelectric conversion layer, and a second passivation layer.
  • the implementation of this embodiment is to form an electrical connection in series between the first transparent conductive layer 502 and the metal substrate 508 from top to bottom, and all of them are insulated from the metal sidewall 509, including: the second transparent conductive layer of AlGaAs material A conductive layer 506 , a first passivation layer 503 , a photoelectric conversion layer 504 with a photon absorption structure, and a second passivation layer 505 .
  • the first passivation layer 503 is made of AlnP semiconductor material (such as Al 0.5 ln 0.5 P) with a thickness of 30 nm.
  • the function of the first passivation layer 503 is to passivate the energy state of the surface defects of the photon-absorbing structure, reduce the recombination rate of photogenerated holes on the surface of the photon-absorbing structure, and thereby increase the open circuit voltage of the battery.
  • the main purpose of the roughening layer 507 is to assist photons to generate random reflection angles in the back reflection layer, thereby assisting in realizing the optical path length of the photovoltaic cell and improving the absorption capacity of the 504 .
  • the upper surface of the first transparent conductive layer 502 is covered with an anti-reflection layer 501 .
  • the second passivation layer 505 is AlnP, AlGalnP or AlGaAs semiconductor material (eg Al 0.5 ln 0.5 P, Al 0.25 Ga 0.25 ln 0.5 P, Al 0.6 Ga 0.4 As).
  • the function of the second passivation layer is similar to that of the first passivation layer, reducing the recombination rate of photogenerated electrons on the surface of the photon absorbing structure.
  • the second transparent conductive layer 506 requires a wide band gap semiconductor whose band gap (E g ) is greater than the energy (E ph ) of incident device photons, such as Al x ln 1-x P, Al x Ga 1 -x P, Al x Ga y ln 1-xy P or Al x Ga 1-x As, where x and y take values between 0 and 1. Different x, y values correspond to different forbidden band widths, which are usually prepared by epitaxial technology.
  • the photoelectric conversion layer 504 with a photon-absorbing structure includes (1) N-type Ga 0.5 ln 0.5 P with a thickness of preferably 50 nm and a doping concentration of preferably 10 18 cm -3 ; (2) P-type GaAs with a thickness of preferably 1500-3000 nm , the preferred doping concentration is 10 17 cm -3 .
  • the second passivation layer 505 adopts p-type Al 0.25 Ga 0.25 ln 0.5 P or Al 0.5 Ga 0.5 As thin film, the thickness is preferably 100 nm, and the doping concentration is preferably on the order of 10 18 cm ⁇ 3 .
  • this embodiment is another specific implementation mode "multi-junction photovoltaic cell" relative to Embodiment 9, which further improves the efficiency of converting light energy into electrical energy, that is, multiple photovoltaic cells can be set in the optical grid 600 Cell photoelectric absorption junction.
  • the photon absorption structure of the photoelectric conversion layer belongs to a semiconductor material with a band gap, and the energy of the photons is different. In order to absorb light with a photon energy greater than the band gap, it is possible to avoid the loss of part of the energy greater than the band gap in the form of thermal electrons; further, this embodiment It is disclosed that photons of different energies can be effectively utilized by adopting a multi-junction structure. In the lattice structure, multiple photoelectric conversion layers may be connected in series, as shown in FIG. 11B .
  • the absorption cut-off wavelength of each photoelectric conversion layer is the same;
  • the highest photoelectric conversion efficiency of solar cells with one layer is 33%, and the highest photoelectric conversion efficiency of solar cells with three photoelectric conversion layers reaches 66%.
  • Each photovoltaic cell photoabsorber junction absorption structure can have the same absorption cut-off wavelength.
  • Figure 11B shows multiple photoelectric absorption junctions of a multi-junction laser photovoltaic cell: 603 photoelectric absorption junction-1, ... 605 photoelectric absorption junction-N, which may also have different cut-off wavelengths, such as multi-junction solar cells.
  • Photovoltaic cells have a wider choice of materials than light-emitting devices. It can be II-VI group, III-V group, IV group semiconductor, perovskite or organic semiconductor.
  • the thin-film semiconductor light-emitting device using the "optical lattice structure” can approach the theoretical optimal value in terms of light conduction, heat conduction and electrical conduction, greatly improve the electro-optical conversion efficiency and energy density of high-power light emitters, and break through the existing The electro-optical conversion efficiency bottleneck of the light-emitting device of the technology, and is suitable for the device size of micron scale to centimeter scale.

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Abstract

一种薄膜型半导体芯片结构，该结构利用金属材料，将分别制成P型金属和N型金属的其中之一作为衬底（108），另一金属作为金属侧壁（109）。金属侧壁与金属衬底绝缘连接，形成立体的光学反射腔体（1）。在光学反射腔体顶部覆盖透明导电层（102），并在光学反射腔体中设置光电转换层（104），从而形成"光格"（100）。立体光格结构只能通过光学反射腔体顶部的透明导电层所在的平面发射或者收集光子。多个光格聚集在一起，则构成"光格阵列"。

Description

一种薄膜型半导体芯片结构及应用其的光电器件 技术领域
本发明涉及半导体领域的一种薄膜型半导体芯片结构及应用其的光电器件。
背景技术
以III-V族、II-IV族、III族氮化物、III族砷磷化物的半导体发光材料制备的发光二极管作为第四代光源(半导体固态照明)的主体。它具有节能、环保、寿命长、体积小、重量轻、抗震、安全性好(低电压驱动)，响应时间短、冷光源、色彩丰富、应用范围广等众多优点，广泛应用于LCD背光照明光源、汽车照明、室内外通用照明、显示屏、交通信号灯、景观照明、微型投影机、植物照明灯、医疗用照明设备(如：治疗黄疸用的蓝光灯)等众多领域。
常见的LED芯片的结构形式有四种：(1)传统正装(横向结构):P电极与N电极均设置在芯片的同一侧，缺点是散热能力差，透明电极电流分布不均匀，光提取率不高；(2)倒装结构(Flip Chip):将正装芯片倒置于导电导热性能良好的基板上，使得发热比较集中的发光外延层更接近于散热部件，使大部分热量通过基板导出，本质上没有解决散热和电流拥塞的问题；(3)垂直结构(垂直薄膜Vertical Thin Film):一般是在外延层形成后，将外延层分割成若干绝缘分离的半导体薄膜层，然后P电极和N电极分置于半导体薄膜层两侧形成串联结构，解决了P电极遮光的问题；但是，仍然存在N电极遮挡光子，电流分布不均的问题；(4)薄膜倒装(Thin Film Flip Chip)：将薄膜LED与倒装LED的技术结合起来，即薄膜倒装焊接的多量子阱结构的LED。在上述芯片结构的基础上，学术界和工业界还提出多种提高电光转换效率的方法：反射层 (金属反射层、分布式布拉格反射层、全反射层)、图形化衬底、表面粗化、光子晶体技术、透明衬底、激光剥离、欧姆电极形状的优化、芯片形状几何化结构(抛物线、半球形、三角形等)等。尽管如此，电光转换效率低仍然是LED面临的主要技术瓶颈，而电光转换效率又是光电器件，包括LED、激光器、光放大器等元器件的核心技术参数。
更进一步地，电光转换效率主要由电子注入效率、内部量子效率和光导出效率三部分组成。电子注入效率主要由器件内部串阻和并阻有关。其中，串阻主要由金属半导体接触电阻，半导体横向扩散电阻、金属栅线电阻和半导体PN方向的外延层体的电阻组成；并阻主要与器件内部和边缘的漏电有关。内部量子效率主要和器件的内部量子结构，比如量子阱、量子线、量子点的几何特征和能带特征、以及量子阱内部的缺陷密度有关，同时和器件工作温度密切有相关,通常光电器件温度增加1℃，转换效率降低约1％。在正常工作状态下，二极管的PN结通常维持比较高的温度，从50℃到120℃。温度每升高10℃，光通量就会衰减1％，LED发光波长会漂移1～2nm。所以，不能将芯片热量及时排出，将无法获得稳定的光输出。光导出率受器件出光面半导体材料的光学折射率限制。以磷化镓铟(GaInP)为例，在红光波段折射率约为3.3，出光面的全反射角小于16度，光导出效率约2.5％。
在专利文献1中，公开了用于制造光电子半导体芯片的方法和光电子半导体芯片。具体地，该技术方案是在半导体层序列上，设置延伸穿过有源区的凹部，用金属增强层覆盖半导体层序列并至少部分填充凹部，使得凹部内的金属增强层在横向方向上，至少局部地环绕半导体本体。如此产生的技术效果是，将表面电极转移至背面，消除表面金属电极的挡光效应，利用金属表面反射光子，对出光效率虽有所改善，但仍嫌不足；而且，散热效果、电流拥塞和电光 转换的量子效率仍然有很大的改善空间。
在专利文献2中，公开了从上至下依次N型GaN层、发光层MQW、P型GaN层、透明导电薄膜、不导电的高反射膜，以及贯穿其中的导电孔洞；N型欧姆接触电极柱填充导电孔洞，对散热效果虽有所改善，但仍嫌不足；电流拥塞和电光转换的量子效率、侧壁逸光等问题没有得到解决。
现有技术文献
专利文献1：ZL201880023704.7中国发明专利申请公开文本
专利文献2：ZL201310096118.4中国发明专利申请公开文本
发明内容
本发明的目的就在于，提出一种区别于现有技术的薄膜型半导体芯片结构，并将其命名为“光格结构”。该结构明显区别于传统正装(横向结构)、倒装结构、垂直结构和薄膜倒装结构，能够大幅提升电子注入效率、内部光电转换的量子效率、内部反射效果和散热效果，增强其在导光、导热和导电三方面的性能。
本发明通过以下技术方案来实现上述目的：
根据本发明的一个方面，提供一种薄膜型半导体芯片结构，其特征在于，含有至少一个光格；所述至少一个光格包括，用作电极的金属衬底和金属侧壁，所述金属衬底和所述金属侧壁相互绝缘连接，形成光学反射腔体；第一透明导电层，覆盖所述腔体的顶部；并且，所述第一透明导电层与所述金属侧壁电连接；以及，至少一个光电转换层，设置在所述腔体内；所述至少一个光电转换层串联在所述金属衬底与所述第一透明导电层之间，并且与所述金属侧壁绝缘。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述金属衬底为用作 正电极的P型金属，所述金属侧壁为用作负电极的N型金属；或者，所述金属衬底为用作负电极的N型金属，所述金属侧壁为用作正电极的P型金属。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述腔体内的所述金属侧壁表面覆盖有电气绝缘层。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述金属侧壁嵌入所述金属衬底。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述金属衬底自上而下依次包括半导体金属接触层、金属支撑层和导热层。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述至少一个光格内的所述金属侧壁表面与所述金属衬底的夹角呈钝角。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述至少一个光格内的所述金属侧壁表面为随机粗糙面。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述电气绝缘层主要由氧化硅、氮化硅、氧化铝、乙烯-四氟乙烯共聚物ETFE、聚对苯二甲酸乙二酯PET,聚丙烯PP或或者聚酰亚胺PI中的一种或多种组成。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述金属侧壁和所述金属衬底的厚度范围为10μm～300μm。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述半导体金属接触层的主要组成为金、钯、银、铂、铝、铟、铜、镍、钛的一种或多种；所述金属支撑层的主要组成为铜、银、铝、金、铂、鉬、镍、铬中的一种或多种；所述导热层的主要组成为铜、银、铝、金、铂、鉬、镍、铬中的一种或多种。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述半导体金属接触层厚度范围为10nm～300nm。
根据本发明的一个实施例的薄膜型半导体芯片结构，两个以上所述光格排布形成光格阵列，其中，每个所述光格的所述金属衬底相互电连接，每个所述光格的所述金属侧壁相互电连接。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述光格阵列呈蜂窝状。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述光格阵列中的每个所述光格的出光面尺寸范围为10μm～500μm。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述至少一个光电转换层具有PN结、多量子阱结构、双面异质PN结、多量子线结构、多量子点结构或超晶格结构。
根据本发明的一个实施例的薄膜型半导体芯片结构，在所述至少一个光格内所的述第一透明导电层和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第一电流限制层、所述至少一个光电转换层、第二电流限制层、第二透明导电层，以及粗化层。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述第一透明导电层的上表面覆盖有增透层。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述增透层的主要组成为氮化物、氧化物、硒化物、硫化物或者乙烯-四氟乙烯共聚物ETFE、聚对苯二甲酸乙二酯PET,聚丙烯PP，聚酰亚胺PI中的一种或者多种。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述第一电流限制层和所述第二电流限制层的主要组成为：III-V族氮化物半导体器件中的Al xGa 1-xN、Al xGa yln 1-x-yN，III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，III-V族锑化物半导 体器件中的Al xGa 1-xSb、Al xGa yln 1-x-ySb，III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，或者III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述第一透明导电层的主要组成为：氧化铟锡，氧化镓铟锌，氧化锌，III-V族氮化物半导体器件中的Al xGa 1-xN、Al xGa yln 1-x-yN，III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，III-V族锑化物半导体器件中多Al xGa 1-xSb、Al xGa yln 1-x-ySb，III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，或者III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
根据本发明的一个实施例的薄膜型半导体芯片结构，所述第二透明导电层的主要组成为：III-V族氮化物半导体器件中的Al xGa 1-xN、Al xGa yln 1-x-yN，III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，III-V族锑化物半导体器件中的Al xGa 1-xSb、Al xGa yln 1-x-ySb，III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z,Al xGa yln 1-x-yAs zSb 1-z，其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
一种发光二极管，具有任意一项所述薄膜型半导体芯片结构。
可选地，所述至少一个光电转换层具有多量子阱结构，主要组成为：GaInP、AlGaInP、AllnP、AlGaN、AlInGaN、GaN、InGaN、InGaAs或AlGaInAs。
一种激光器，具有至少一个所述薄膜型半导体芯片结构。
可选地，所述至少一个光格内，含有至少一个激光器发光结，所述至少一个激光器发光结包括，在所述第一透明导电层和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第一电流限制层，所述至少一个光电转换层，以及第二电流限制层。
可选地，在所述至少一个光格内的所述至少一个激光器发光结和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第二透明导电层和DBR反射层。
可选地，所述第一透明导电层的上表面自上而下依次覆盖有增透层和DBR层。
可选地，所述至少一个光电转换层具有多量子阱结构，主要组成为InGaAs和AlGaAs。
一种光伏电池，具有任意一项所述的薄膜型半导体芯片结构，其中，所述至少一个光电转换层具有光子吸收结构。
可选地，所述至少一个光格内，含有至少一个光伏电池光电吸收结，所述至少一个光伏电池光电吸收结包括，在所述第一透明导电层和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第一钝化层，所述至少一个光电转换层，以及第二钝化层。
可选地，在所述至少一个光格内的所述至少一个光伏电池光电吸收结和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第二透明导电层和粗化层。
可选地，所述第一透明导电层的上表面覆盖有增透层。
可选地，所述至少一个光电转换层主要组成为GaAs。
本发明的有益效果在于：
第一，实现高的光学反射率，实现器件内部产生的光子能够经金属衬底和金属侧壁反射，避免光子从侧壁逃逸和被衬底吸收而导致的能量损失，在蜂窝结构具有立体式的反射结构，只保留器件表面出光，同时消除了表面金属电极的遮光效应，再加上表面多层结构的增透结构，提升了光提取效率。
第二，立体的金属导热结构提供了优异的热传导路径，立体的光格结构的导热效率可以达到平面金属基板结构的3倍以上，可以大幅降低器件的内部温度，在大电流密度条件下工作时，可以有效导出器件内部的热量，有利于器件长期高效率、高可靠性的工作。
第三，在光能与电能转换过程中，能有效降低器件工作温度，抑制电子-空穴对的非辐射复合发热。在电能转换成光能时，提高电子和空穴辐射复合效率，从而提高从电能到光能的转换效率；在光能转换成电能时，能降低暗电流，更高效地完成电子-空穴对的分离，从而提高从光能到电能的转换效率。
第四，光格结构中，与金属作侧壁电连接的第一透明导电层，可以实现极低的器件内阻，实现高效率的电注入，能有效地解决电流拥塞的问题，电子流向金属侧壁，使得电流均匀分布，提高电流的扩展或收集效率。特别地，在第一～第四的有益效果共同作用下，采用光格结构的器件形成光格阵列，提升整体的能量转换效率。
第五，光格结构的薄膜光电器件采用金属衬底作为支撑结构，具有优异的柔韧性和可弯折型。相比常规制备在刚性衬底(如硅衬底、砷化镓衬底、氧化铝衬底)的光电器件，具有更加广泛和灵活的应用场景。
附图说明
图1为本发明的一个示例性实施例，采用光格结构的薄膜型半导体芯片的截面示意图；
图2A为本发明的一个示例性实施例示出，光子在光格的光学反射腔体中反射的截面示意图；
图2B为本发明的一个示例性实施例示出，光子在光格的光学反射腔体中反射的三维立体示意图
图3为本发明的一个示例性实施例示出：光格内的光电转换层将电能转换成光能时，电子-空穴对辐射复合的示意图；
图4为本发明的一个示例性实施例示出的光电转换层，由2个光电转换层组成的截面示意图；
图5A为本发明的一个示例性实施例示出，光格的第一透明导电层提高电流扩展效率的示意图一；
图5B为本发明的一个示例性实施例示出，光格的第一透明导电层提高电流扩展效率的示意图二；
图6为本发明的另一个示例性实施例示出的采用光格结构的薄膜型半导体芯片的截面示意图；
图7为本发明的再一个示例性实施例示出，横截面呈六边形的光格组成蜂窝状光格阵列的示意图；
图8为本发明的一个示例性实施例示出，用于激光器的具有光格结构的薄膜型半导体芯片的截面示意图；
图9为本发明的一个示例性实施例示出，用于光伏电池的具有光格结构的薄膜型半导体芯片的截面示意图；
图10为本发明的一个示例性实施例示出：光格内的光电转换层将光能转换成电能时，在内建电场作用下电子-空穴对分离的示意图；
图11A为本发明的另一个示例性实施例示出，用于单结光伏电池的具有光格结构的薄膜型半导体芯片的截面示意图；
图11B为本发明的再一个示例性实施例示出，用于多结光伏电池的具有光格结构的薄膜型半导体芯片的截面示意图。
具体实施方式
以下实施例旨在更好地理解本发明的实质，并非将本发明局限于所描述的实施例。此外，术语“第一”、“第二”用于区分描述，而不能理解为指示或暗示相对重要性。在实施例的描述中，采用了半导体薄膜层上表面、半导体薄膜层下表面等概念。应当理解，这里所说的“上”和“下”是相对于光格结构的出光方向而言，即“上”是指朝向光格出光方向的一侧，“下”是指远离光格出光方向的一侧。
对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理的情况下，对这些实施例进行变化，仍可获得本发明的有益效果。
本发明公开的薄膜型半导体芯片结构，其明显区别于现有的传统正装(横向结构)、倒装结构、垂直结构(也称垂直薄膜结构)和薄膜倒装结构，发明人将其命名为“光格结构”。该结构将用作电极的P型金属和N型金属其中之一作为衬底，另一金属作为金属侧壁。金属侧壁与金属衬底绝缘连接，形成立体的光学反射腔体。在光学反射腔体顶部覆盖有第一透明导电层，并在光学反射腔体中设置至少一个光电转换层，形成“光格”；相应地，这种结构就是“光格结构”。从技术效果上讲，金属侧壁与金属衬底相对于光子都是高反射层； 在封闭的光学反射腔体的反射作用下，光子仅能透过光格顶部的第一透明导电层进出。
需要说明的是，光电转换层是将光能和电能进行转换的薄膜型半导体器件结构。当光电转换层为将电能转换成光能的薄膜型半导体时，光格就成为发光单元，可以用于LED、激光器、光放大器；当光电转换层为将光能转换成电能的薄膜型半导体时，光格就成为电能的生成单元，可以用于光伏电池，包括激光光伏电池和太阳能光伏电池。
下面结合附图对本发明作进一步说明：
实施例1
如图1所示，本发明实施例1的薄膜型半导体芯片结构可以由一个或多个光格100组成。光格100包括，用作电极的金属衬底108和金属侧壁109，金属衬底108与金属侧壁109相互绝缘连接形成光学反射腔体1(如图2A和2B所示)；在光学反射腔体1的顶部覆盖第一透明导电层102，第一透明导电层102与金属侧壁109电连接，使得光格100形成封闭结构。如图2A和图2B所示，在金属衬底108和金属侧壁109的反射作用下，光子仅能透过光格顶部的第一透明导电层102射出。在光格内部，光学反射腔体1中设置能够将光能和电能进行互相转换的光电转换层104。并且，光电转换层104串联在金属衬底108与第一透明导电层102之间，第一透明导电层102与金属侧壁109实现电连接。光电转换层104通过腔体1内金属侧壁109表面覆盖的电气绝缘层1091，确保与金属侧壁109绝缘。电气绝缘层1091主要由绝缘透光氧化物或者氮化物(比如氧化硅、氮化硅、氧化铝)，聚合有机物(乙烯-四氟乙烯共聚物ETFE、聚对苯二甲酸乙二酯PET,聚丙烯PP，聚酰亚胺PI等)一种或多种组成，以获得更好的绝缘性能。需要注意的是，聚合有机物须选用无色材料，避免对光子的吸 收。
在发明中光电转换层104可以采用薄膜型半导体制备工艺制作的PN结，如图3所示，PN结在正向偏压下，高浓度电子和空穴分别从N型半导体区域和P型半导体区域注入有源区发生复合。如果采用常规的同质PN结的半导体器件结构，将会有大量的载流子不能在有源区发生复合产生光子，电能会通过其他形式的热能耗散掉，使得电能转化为光能的效率低下。在实施例中，光电转换层104采用多量子阱结构。多量子阱结构是发生电子-空穴辐射复合的区域，通常采用单个或者多个量子阱结构。量子阱本身就是一种具有量子限制效应的电子能带结构。光格结构能够提高量子效率，其良好的散热效果能有效的降低热能损耗，使得更多的载流子能够在多量子阱(MQW)结构的有源区发生复合，产生光子，并利用光学反射腔体1避免光子侧壁逃逸和衬底吸收。
采用III-V族磷化物半导体材料体系(GaInP/AlGaInP/AllnP)，可以产生波长为570nm到680nm的红黄光。以产生650nm的波长的红光为例，量子阱的阱区采用Ga 0.5In 0.5P材料，阱的厚度在3～10nm，量子阱的势垒区采用Al 0.5Ga 0.25In 0.25P，势垒区厚度在10～30nm。单量子阱包含两个势垒区和一个阱区，累计厚度在30～50nm。多量子阱就是一层阱和一层势垒周期重复，单量子阱的叠加，总厚度通常在1000nm以下。如此，光格结构就可以大幅度降低非辐射复合的载流子以热能的形式消耗电能，提高能量转换效率、量子效率和出光率。光电转换层104还可以采用其他电能转换成光能的半导体结构，比如：双面异质PN结、多量子线结构、多量子点结构、超晶格结构等。特别地，光电转换层104可以是多层结构。如图4所示，具有两层光电转换层，自上而下分别是多量子阱层1041和双面异质PN结层1042，相互之间用隧穿结连接；二者也可以交换位置，即双面异质PN结层1041和多量子阱层1042。
金属衬底108作为正电极P型金属，有四个核心功能。第一提供金属电极，实现器件和外部电源的电气连接；第二实现高的光学反射率，实现器件内部产生的光子能够全部从器件底部反射；第三提供是一种优异的热导体，器件在大功率(大电流密度)条件下工作时，可以有效导出器件内部的热量，有利于器件长期高效率高可靠性的工作。第四为整个薄膜化器件提供可靠的机械支撑，金属电极厚度可以根据器件的尺寸大小进行调整，数值范围通常在10μm～300μm。金属衬底自上而下依次是半导体金属接触层、金属支撑层和导热层。通常地，(1)半导体金属接触层厚度在10～300nm之间，主要由有利形成欧姆接触和高反射率的金属材料组成，比如金、钯、银、铂、铝、铟、铜、镍、钛中的一种或多种组成；(2)金属支撑层通常由所述金属支撑层和所述导热层主要由铜、银、铝、金、铂、鉬、镍、铬中的一种或多种组成。(3)导热层通常由所述金属支撑层和所述导热层主要由铜、银、铝、金、铂、鉬、镍、铬中的一种或多种组成。金属衬底108作为支撑结构，具有优异的柔韧性和可弯折型；相比采用在刚性衬底(如硅衬底、砷化镓衬底、氧化铝衬底)的光电器件，具有更加广泛和灵活的应用场景。
金属侧壁109作为负电极N型金属，电连接第一透明导电层102,延伸穿过整个多量子阱发光层104，并用透明绝缘材料和被穿透的外延结构层实现电气绝缘。金属侧壁109有三个核心功能：第一、提供金属电极，实现器件和外部电源的电气连接。第二、实现高的光学反射率，形成光格结构的侧壁封闭的光学反射腔体1。金属侧壁109和金属衬底108，形成只能上表面出光的光格结构，实现器件内部产生的光子能够全部从器件表面导出。第三、提供一种优异的热导体，器件在大功率(大电流密度)条件下工作时，可以有效导出器件内部的热量，有利于器件长期高效率高可靠性的工作。为了避免光子发生垂直反射的情况， 在光格100内的金属侧壁109的表面可为平面或曲面，对光子进行反射；也可选随机粗糙面，对光子产生散射作用(参阅《随机粗糙面散射的基本理论与方法》，科学出版社，ISBN：9787030261243)；并且，光格100内的金属侧壁109表面与金属衬底108的上表面夹角呈钝角，有利于光子在光学反射腔体内的反射，提高出光效率。
光格100在金属衬底108和金属侧壁109的共同作用下，一方面，实现了实现高的光学反射率，实现器件内部产生的光子能够经金属衬底108和金属侧壁109反射，避免光子从侧壁逃逸和被衬底吸收而导致的能量损失；另一方面，由于金属材料的固有特性，光格100的立体金属导热结构提供了优良的热传导路径，立体的光格结构的导热效率可以达到平面金属基板结构的3倍以上，可以大幅降低器件的内部温度，在大电流密度条件下工作时，可以有效导出器件内部的热量，有利于器件长期高效率高可靠性的工作；再一方面，由于金属材料的柔韧性和可弯折型，使得光格100比刚性衬底(如硅衬底、砷化镓衬底、氧化铝衬底)的光电器件，具有更加广泛和灵活的应用场景；又一方面，电子注入效率和串阻密切相关，光格结构使用金属衬底108和金属侧壁109，相比需要半导体材料导电的传统栅线结构，更有利于降低串阻。
如图5A和图5B所示，对于横截面呈六边形的金属侧壁109，第一透明导电层102能够使得来自金属侧壁109的电子，在发光平面上做扩展，有效地解决了电流拥塞的问题，提高电流扩展效率。电荷流向金属侧壁，使得电流均匀分布。第一透明导电层102的厚度优选的在0.5μm和5μm之间，需要根据光格的横向扩展距离，也就是光学反射腔体1内空间的横向距离，发光器件的电流密度等因素来确定导电层材料的电阻率(厚度和掺杂浓度)。同时还需要该导电层不吸收器件发光层产生的光子，要求透明导电层的禁带宽度(E g)大于器 件产生的光子的能量(E ph)。第一透明导电层102通常选用：由蒸镀、溅射、化学沉积等工艺制备的氧化铟锡、氧化镓铟锌、氧化锌等透明氧化物导体，或者宽禁带半导体，比如在III-V族氮化物半导体器件中采用Al xGa 1-xN、Al xGa yln 1-x-yN，在III-V族磷化物半导体器件中采用Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP；在III-V族砷化物半导体器件中采用Al xGa 1-xAs、Al xGa yln 1-x-yAs，在III-V族锑化物半导体器件中采用Al xGa 1-xSb、Al xGa yln 1-x-ySb，在III-V族砷磷化物半导体器件中采用Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z；在III-V族砷锑化物半导体器件中采用Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。不同的x,y值对应不同的禁带宽度，通常采用外延技术制备。
实施例2
下面根据附图6详细说明本公开的另一个实施例。
实施例2是在实施例1的基础上另一个具体实施方式，光格200利用外延结构薄膜层，进一步提升将电能转换成光能的转换效率，最终提高出光率。需要说明的是，外延结构薄膜层指的是在衬底上使用外延工艺生长的薄膜层。
如图6所示，光电转换层采用将电能转换成光能的多量子阱发光层204，自上而下在第一透明导电层202和金属衬底208之间依次以串联方式形成电连接：第一电流限制层203、多量子阱发光层204、第二电流限制层205、第二透明导电层206和粗化层207，同时须与金属侧壁209绝缘，并在第一透明导电层202的上表面覆盖增透层201，光子从增透层201的上表面2011射出，使得采用光格结构的薄膜型半导体出光率显著提高。
图5A示出的实施例1光格横截面形状为六边形，仅仅为优选情形之一。事实上，光格横截面可以为呈封闭的任意几何形状。
以产生为570nm到680nm的红黄光的III-V族磷化物半导体材料体系(GaInP/AlGaInP/AllnP)为例。第一电流限制层203和第二电流限制层205，采用AlGalnP或者AllnP材料，并在多量子阱发光层204两侧对称设置，优选的厚度在80～150nm。第一电流限制层203和第二电流限制层205共同构成电子-空穴空间限制结构，提高电子-空穴的复合几率，从而提高光电器件的内部量子效率。通常第一电流限制层203和第二电流限制层205的晶格常数和外延衬底的晶格常数保持一致，材料禁带宽度(E g)大于多量子阱发光层204的产生光子能量(E ph)。第一电流限制层203和第二电流限制层205在III-V族氮化物半导体器件中采用Al xGa 1-xN、Al xGa yln 1-x-yN，在III-V族磷化物半导体器件中采用Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，在III-V族砷化物半导体器件中采用Al xGa 1-xAs、Al xGa yln 1-x-yAs，在III-V族锑化物半导体器件中采用Al xGa 1-xSb、Al xGa yln 1-x-ySb，在III-V族砷磷化物半导体器件中采用Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，或者在III-V族砷锑化物半导体器件中采用Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
在多量子阱发光层204中，以产生650nm的波长的红光为例，量子阱的阱区采用Ga 0.5In 0.5P材料，阱的厚度在3～10nm，量子阱的势垒区采用Al 0.5Ga 0.25In 0.25P，势垒区厚度在10～30nm。单量子阱包含两个势垒区和一个阱区，累计厚度在30～50nm。多量子阱就是一层阱和一层势垒周期重复，单量子阱的叠加，总厚度通常在1000nm以下。特别地，在红光到蓝绿光的发光波长范围，使用金属有机化学气相淀积(MOCVD)技术或者分子式外延(MBE)技术，外延生长四元系AlGaInP基发光PN二极管的内量子效率可以超过95％。
第二透明导电层206要求其禁带宽度(E g)大于器件产生的光子的能量(E ph) 的宽禁带宽度半导体，宽禁带半导体比如III-V族氮化物半导体器件中的Al xGa 1-xN、Al xGa yln 1-x-yN，III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，III-V族锑化物半导体器件中的Al xGa 1-xSb、Al xGa yln 1-x-ySb，III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间；通常采用外延技术制备。在金属衬底208作为正电极、金属侧壁209作为负电极的情况下，透明导电层206在高效导通电子的条件下不吸收光子。
粗化层207主要目的是协助光子在背面反射层产生随机反射角，从而协助实现光子器件表面克服最大反射角，从器件内部导出，成为有效发光输出。粗化的相关尺寸为有效波长的二分之一时，能够产生光学衍射现象，能达到更好的出光效率。而且，可以采用化学腐蚀或者刻蚀等方式，对第一透明导电层202的表面做粗化处理，使其表面形成微米级的粗糙度，提高出光效率。
增透层201覆盖在第一透明导电层202上表面，是光学增透膜，通常厚度在100nm到1000nm之间，其光学折射率介于半导体(折射率3.0)和空气(折射率1.0)；由一层或者多层不同折射率的光学介质膜构成。增透层201的光学折射率与空气相比差距越大，将导致外量子效率降低。光学折射率按照实现最大出光角的要求从3.0逐层变化减小，接近空气的光折射率1.0。为此，光学介质膜的材料通常是氟化物、氮化物、氧化物、硒化物、硫化物或者有机聚合物(乙烯-四氟乙烯共聚物ETFE、聚对苯二甲酸乙二酯PET,聚丙烯PP，聚酰亚胺PI等)中的一种或者多种。
如图6所示，优选地，为了避免光子泄露，金属侧壁209嵌入金属衬底208， 嵌入深度优选小于2000nm。
实施例3
下面根据附图7详细说明本发明公开的另一个实施例。
将多个实施例2的光格排布在一起，则构成“光格阵列”，可以呈蜂窝状。整个器件是由众多光格200聚集形成的蜂窝状发光结构，蜂窝结构中的光格的尺寸可以由光刻精度控制；优选地，每个光格的出光面尺寸范围在10μm～500μm，可以实现极低的器件内阻，实现高效率的电注入效率；蜂窝结构具有立体式的反射结构，只保留器件表面出光，同时消除了表面金属电极的遮光效应，再加上表面多层结构的增透结构，可以超过95％的出光效率；实现了立体的高效率导热结构，当蜂窝尺寸接近半导体薄膜层厚度的数量级(通常10μm)时，光格结构的导热效率是平面金属基板的3倍以上，可以大幅降低器件的内部温度，提高器件内部的电光转换的量子效率。
光格阵列非常适用于高能量密度、高发热量的光电器件，比如：大功率LED、激光器、光放大器、激光电池、高倍聚光太阳能电池等。综合上述结构，最终可以实现80％以上的电光转换效率。
实施例4
本发明公开提供了光格结构在光电器件上的应用实施例：有色光LED。
当实施例2的多量子阱发光层204，采用AlInGaN多元合金化合物半导体材料体系，通常能够高效率发光的波长集中360nm至540nm的蓝绿光范围，可以用作红绿蓝显示器的核心器件。另外，因为AlN、GaN和InN的禁带宽度跨度从6.0eV到1.0eV，对应波长为206nm到1240nm,覆盖深紫外到近红外波段，随着材料制备技术的提升，AlInGaN材料体系的高效率发光范围也由360～540nm进一步向短波和长波两个方向拓宽。
为了使实施例2的光格200成为发光波长为450nm的蓝光光格，第一透明导电层202要求导电层的禁带宽度(E g)大于器件产生的光子的能量(E ph)。通常选用：氧化铟锡、氧化镓铟锌、氧化锌等，通常由蒸镀、溅射、化学沉积等方式制备。光格200内设置外延结构薄膜层，具体为：氮化镓铝AlGaN材料的第二透明导电层206、氮化镓铝AlGaN材料(例如Al 0.13Ga 0.87N禁带宽度超过3.6eV)的第一电流限制层203、氮化镓铝AlGaN材料的多量子阱发光层204和第二电流限制层205组成。其中多量子阱发光层204通常由GaN/InGaN纳米级的周期性结构组成，其中InGaN是量子阱区，Ga/In比例在4左右，记为In 0.2Ga 0.8N，是产生电子空穴复合产生光子的区域，有InGaN材料的禁带宽度和量子阱的能级分裂和极化效应共同决定量子阱的发光的中心波长，厚度通常在3nm到5nm，其中GaN是量子势垒区，厚度在10～30nm；也可以是AlInGaN/InGaN的纳米级周期性结构；其中InGaN是量子阱区，厚度通常在3nm到5nm，AlInGaN是量子势垒区，AlInGaN，厚度在10～30nm，能够抵消InGaN量子阱层的极化效应，具备更高的内部量子效率。
实施例5
本发明公开提供了光格结构在光电器件上的应用实施例LED的另一个方面。
采用InGaAs/AlGaInAs多元合金化合物半导体材料体系，通常能够高效率发光的波长集中700nm至2000nm的红光和近红外光范围，可以用作红光医疗、红外成像等领域。
为了使实施例2的光格200成为发光波长为940nm的红外光光格，第一透明导电层202要求导电层的禁带宽度(E g)大于器件产生的光子的能量(E ph)。通常选用：氧化铟锡、氧化镓铟锌、氧化锌等，通常由蒸镀、溅射、化学沉积 等方式制备，也可以AlGaInAs体系，一般采用外延技术制备，包括有机金属气象外延(MOCVD)和分子束外延(MBE)。光格200内设置外延结构薄膜层，具体为：第二透明导电层206、第一电流限制层203(例如Al 0.5Ga 0.5As)、多量子阱发光层204和第二电流限制层205(例如Al 0.5Ga 0.5As)。其中多量子阱发光层204通常由In 0.14Ga 0.86As/Al 0.22Ga 0.88As纳米级的周期性结构组成，其中In 0.14Ga 0.86As是量子阱区，是产生电子空穴复合产生光子的区域，有InGaAs材料的禁带宽度和量子阱的能级分裂共同决定量子阱的发光的中心波长，其中Al 0.22Ga 0.88As是量子势垒区，厚度在10～30nm，量子阱周期数在3到30个。
同样结构也适用于III-V锑化物半导体材料体系(Al xGa yln 1-x-ySb),III-V族砷磷化物半导体体系(Al xGa yln 1-x-yAs zP 1-z),III-V族砷锑化物半导体材料体系(Al xGa yln 1-x-yAs zSb 1-z)，其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，其中x,y,z取值范围是大于等于0，小于等于1的闭合区间。这类材料通常能够高效率发光的波长集中2500nm至4000nm中红外光范围，可以用作远程红外探测等领域。
实施例6
在实施例2中，金属衬底208作为正电极P型金属；金属侧壁209作为负电极N型金属。基于本发明的思想，也可以将金属衬底208作为负电极N型金属；金属侧壁209作为正电极P型金属。在此情况下，光电转换层采用将电能转换成光能的多量子阱发光层204的N区表面朝向N型金属衬底208。
实施例7
如图8所示，本公开提供了一个薄膜型半导体芯片结构的实施例又一方面。薄膜型半导体芯片结构可以由一个或多个光格300组成，用作大功率激光发生器或者光放大器。
大部分光子产生后，立刻通过光格结构的光学反射腔体，射出有源区，也有少部分光子在P-N半导体薄膜内传播，在经过已激发的电子-空穴对时，能够激励二者复合产生一个新的光子，发生半导体的受激辐射。这样的受激辐射能够随着注入电流的增大而发展。现有技术已经表明，通过受激辐射达到发射激光的要求，需要具备三个基本条件：(1)能够产生足够的粒子数反转；(2)具有一个合适的谐振腔，能够用以在腔内产生激光振荡；(3)泵浦能量满足一定的阈值条件，使得腔内的光子增益大于光子损耗。本公开的光格结构提供的解决方案，充分满足这三点要求。封闭的光格结构避免光子逃逸和被衬底吸收的光子损耗；光学反射腔体为激光振荡提供了良好的谐振腔；能量转换过程中，减少非辐射复合的热能损耗，大大提高量子效率，能够提供更多的用于反转的粒子数。
以发光波长为940nm的红外光为例，在实施例5的基础上，第一透明导电层302上表面自上而下依次覆盖增透层310和布拉格反射镜层(简称：DBR层)301。DBR可以是折射率差别大两种透明光学介质的周期性结构，比如氧化钛/氧化铝薄膜(TiO x/AlO y)，每层的厚度是激光器出射光有效波长的四分之一，也可以是AlGaAs/GaAs周期性结构，每层的厚度是激光器出射光有效波长的四分之一。
光格300的第一透明导电层302要求，导电层的禁带宽度(E g)大于器件产生的光子的能量(E ph)。通常选用：氧化铟锡(ITO)、氧化镓铟锌(IGZO),氧化锌(ZnO)等，通常由蒸镀、溅射、化学沉积等方式制备，也可以是AlGaAs材料体系，或者禁带宽度比AlGaInAs体系的更高的AlGaInP半导体材料体系，一般采用外延技术制备，包括有机金属气象外延(MOCVD)和分子束外延(MBE)。第一透明导电层302与金属侧壁309电连接。光格300内设置有激光器发光结。 激光器发光结包括：AlGaAs半导体材料(例如Al 0.5Ga 0.5As)的第一电流限制层303、AlGaAs半导体材料的多量子阱发光层304和第二电流限制层305自上而下依次串联，且均与金属侧壁309绝缘。特别地，多量子阱发光层304为InGaAs和AlGaAs，对特定波长的光可以由In 0.14Ga 0.86As/Al 0.22Ga 0.88As纳米级的周期性结构组成，其中In 0.14Ga 0.86As是量子阱区，是产生电子空穴复合产生光子的区域，由InGaAs材料的禁带宽度和量子阱的能级分裂共同决定量子阱的发光的中心波长，其中Al 0.22Ga 0.88As是量子势垒区，厚度在10～30nm左右,量子阱的周期数在3到30个。
可选地，为进一步提高发光效率，光格300内，自上而下与激光器发光结还串联了AlGaAs材料的第二透明导电层306和分布式布拉格反射层(Distributed Bragg Reflector)，简称DBR反射层307。DBR反射层307由AlGaAs/GaAs周期性结构组成。DBR层通常有折射率相差较大的光学介质材料按照1/4有效波长厚度周期性排列的结构，周期数在3到30个；对单色高具有极高的反射率。
在实际应用中，第一电流限制层、具有多量子阱结构、双面异质PN结、多量子线结构、多量子点结构或超晶格结构的光电转换层和第二电流限制层，形成激光器发光结的单结结构；为了提高激光器的效率，可以采用多个激光器发光结串联的方式工作。一般地，多结激光器发光单元常常是双结或三结的结构。
实施例8
如图9所示，本公开提供了一个薄膜型半导体芯片结构的实施例再一方面“单结光伏电池”。光格结构的薄膜型半导体芯片还可以应用于将光能转换成电能，即光伏效应。该过程一般分成三个阶段：(1)半导体中电子吸收来自外部光源(太阳、激光、各种荧光)的光子，光子激发电子，产生电子-空穴对，且这些非平衡载流子有足够的寿命，在分离前不会复合消失；(2)产生的非平 衡载流子，在内建电场作用下完成电子-空穴对分离，电子集中在N型半导体一边，空穴集中P型半导体一边，在PN结两边产生异性电荷积累，从而产生光生电动势；(3)把PN结用导线连接，形成电流并通过外电路向负载供电，即可获得有效功率输出。光格结构能降低暗电流，更高效地完成电子-空穴对的分离，从而提高光伏效应中从光能到电能的转换效率。
薄膜型半导体芯片结构可以由一个或多个光格400组成，用作大功率激光电池和高倍率太阳电池。以吸收波长范围从300到900nm的砷化镓单结电池为例，可以用于吸收大功率的激光能量，比如发射波长为808nm，能量密度在10W/cm 2以上，或者高倍聚光太阳能电池，聚光倍数在100倍以上，光能量密度也超过10W/cm 2。
在光格400顶部设置第一透明导电层402，导电层的禁带宽度(E g)大于入射器件光子的能量(E ph)。通常选用：氧化铟锡(ITO)、氧化镓铟锌(IGZO),氧化锌(ZnO)等，通常由蒸镀、溅射、化学沉积等方式制备。第一透明导电层402与金属侧壁409电连接，金属衬底408和金属侧壁409构成光学反射腔体。在光伏效应下，第一透明导电层402使得电流均匀分布，避免电流拥塞，提高电流的收集效率，有利于光能向电能的转化。光格400内设置具有光子吸收结构的光电转换层404。需要说明的是，光电转换层404的光子吸收结构含有半导体材料，能够产生电子激发的作用，电子可以吸收光子能量，可以实现较高的光能-电能转换效率。本实施例中，光电转换层404主要由N型GaAs层和P型GaAs层构成，N型GaAs厚度通常在100nm左右,掺杂浓度在10 18cm -3以上，P型GaAs厚度通常在3000nm左右，掺杂浓度在10 17cm -3。图10示出了，具有光子吸收结构的光电转换层404在内建电场作用下电子-空穴对分离。
实施例9
如图11A所示，本实施例是基于实施例8的另一个具体实施方式“单结光伏电池”，进一步提高将光能转换成电能的效率。光格500内设置有光伏电池光电吸收结。光伏电池光电吸收结主要组成为第一钝化层、光电转换层、第二钝化层。
本实施例的实施方式是，自上而下在第一透明导电层502和金属衬底508之间依次以串联方式形成电连接且均与金属侧壁509绝缘，包括：AlGaAs材料的第二透明导电层506、第一钝化层503、具有光子吸收结构的光电转换层504和第二钝化层505。其中，第一钝化层503为AllnP半导体材料(例如Al 0.5ln 0.5P),厚度30nm。第一钝化层503的作用是钝化光子吸收结构的表面缺陷的能态，降低光生空穴在光子吸收结构的表面复合速率，从而提高电池的开路电压。粗化层507主要目的是协助光子在背面反射层产生随机反射角，从而协助实现光伏电池光程长度，提高504的吸收能力。第一透明导电层502上表面覆盖有增透层501。
第二钝化层505为AllnP、AlGalnP或者AlGaAs半导体材料(例如Al 0.5ln 0.5P，Al 0.25Ga 0.25ln 0.5P，Al 0.6Ga 0.4As)。第二钝化层的作用和第一钝化层相似，降低光生电子在光子吸收结构的表面复合速率。第二透明导电层506，要求其禁带宽度(E g)大于入射器件光子的能量(E ph)的宽禁带宽度半导体，宽禁带半导体比如Al xln 1-xP、Al xGa 1-xP、Al xGa yln 1-x-yP或者Al xGa 1-xAs,其中x,y取值在0～1之间。不同的x,y值对应不同的禁带宽度，通常采用外延技术制备。
具有光子吸收结构的光电转换层504包含(1)N型Ga 0.5ln 0.5P,厚度优选的50nm，掺杂浓度优选的10 18cm -3；(2)P型GaAs，厚度优选的1500～3000nm,掺杂浓度优选的10 17cm -3。第二钝化层505采用p型Al 0.25Ga 0.25ln 0.5P或者Al 0.5Ga 0.5As薄膜，厚度优选的100nm,掺杂浓度优选的10 18cm -3数量级。
实施例10
如图11B所示，本实施例是相对于实施例9的另一个具体实施方式“多结光伏电池”，进一步提高将光能转换成电能的效率，即，光格600内可以设置多个光伏电池光电吸收结。
光电转换层的光子吸收结构属于带隙的半导体材料，光子的能量不同，为了吸收光子能量大于带隙的光，避免大于带隙的部分能量通过热电子的形式损失掉；进一步地，本实施例公开了采用多结的结构，可以有效利用不同能量的光子。在光格结构可以多个光电转换层串联的结构，如图11B所示。在激光电池中为了提高输出电压，每个光电转换层的吸收截止波长相同；在太阳能电池中为了拓宽吸收光谱范围，从而提高光电转换效率，每个光电转换层的吸收截止波长不同，单个光电转换层的太阳能电池的最高光电转换效率33％，三个光电转换层的太阳能电池的最高光电转换效率达到66％。
每个光伏电池光电吸收结吸收结构可以有相同的吸收截止波长。如图11B示出多结激光光伏电池的多个光电吸收结：603光电吸收结-1、……605光电吸收结-N，也可以是不同的截止波长，比如多结太阳能电池。光伏电池的材料选择比发光器件更为广泛。可以是II-VI族，III-V族，IV族半导体，也可以是钙钛矿类或者有机半导体。
简言之，采用“光格结构”的薄膜型半导体发光器件，能够在导光、导热和导电三方面接近理论最优值，大幅提升大功率发光器的电光转换效率和能量密度，突破现有技术的发光器件的电光转换效率瓶颈，并适合于微米级至厘米级的器件尺寸。
上述实施例只是本发明的较佳实施例，并不是对本发明技术方案的限制。凡未偏离本发明的实质，在上述实施例的基础上，依照本发明的教导所实施的 简单变换、等同替代、改进即可实现的技术方案，均应视为落入本发明专利的权利保护范围内。

Claims (33)

  1. 一种薄膜型半导体芯片结构，其特征在于：
    含有至少一个光格；所述至少一个光格包括，
    用作电极的金属衬底和金属侧壁，所述金属衬底和所述金属侧壁相互绝缘连接，形成光学反射腔体；
    第一透明导电层，覆盖所述腔体的顶部；并且，所述第一透明导电层与所述金属侧壁电连接；以及
    至少一个光电转换层，设置在所述腔体内；所述至少一个光电转换层串联在所述金属衬底与所述第一透明导电层之间，并且与所述金属侧壁绝缘。
  2. 根据权利要求1所述的薄膜型半导体芯片结构，其特征在于：
    所述金属衬底为用作正电极的P型金属，所述金属侧壁为用作负电极的N型金属；或者，
    所述金属衬底为用作负电极的N型金属，所述金属侧壁为用作正电极的P型金属。
  3. 根据权利要求2所述的薄膜型半导体芯片结构，其特征在于：所述腔体内的所述金属侧壁表面覆盖有电气绝缘层。
  4. 根据权利要求3所述的薄膜型半导体芯片结构，其特征在于：所述金属侧壁嵌入所述金属衬底。
  5. 根据权利要求4所述的薄膜型半导体芯片结构，其特征在于：所述金属衬底自上而下依次包括半导体金属接触层、金属支撑层和导热层。
  6. 根据权利要求5所述的薄膜型半导体芯片结构，其特征在于：所述至少一个光格内的所述金属侧壁表面与所述金属衬底的上表面夹角呈钝角。
  7. 根据权利要求6所述的薄膜型半导体芯片结构，其特征在于：所述至少一个光格内的所述金属侧壁表面为随机粗糙面。
  8. 根据权利要求3所述的薄膜型半导体芯片结构，其特征在于：所述电气绝缘层主要由氧化硅、氮化硅、氧化铝、乙烯-四氟乙烯共聚物ETFE、聚对苯二甲酸乙二酯PET,聚丙烯PP或聚酰亚胺PI中的一种或多种组成。
  9. 根据权利要求4所述的薄膜型半导体芯片结构，其特征在于：所述金属侧壁和所述金属衬底的厚度范围为10μm～300μm。
  10. 根据权利要求5所述的薄膜型半导体芯片结构，其特征在于：
    所述半导体金属接触层的主要组成为金、钯、银、铂、铝、铟、铜、镍、钛中的一种或多种；
    所述金属支撑层的主要组成为铜、银、铝、金、铂、鉬、镍、铬中的一种或多种；
    所述导热层的主要组成为铜、银、铝、金、铂、鉬、镍、铬中的一种或多种。
  11. 根据权利要求9所述的薄膜型半导体芯片结构，其特征在于：所述半导体金属接触层厚度范围为10nm～300nm。
  12. 根据权利要求1～11中任意一项所述的薄膜型半导体芯片结构，其特征在于：两个以上所述光格排布形成光格阵列，其中，每个所述光格的所述金属衬底相互电连接，每个所述光格的所述金属侧壁相互电连接。
  13. 根据权利要求12所述的薄膜型半导体芯片结构，其特征在于：所述光格阵列呈蜂窝状。
  14. 根据权利要求13所述的薄膜型半导体芯片结构，其特征在于：所述光格阵列中的每个所述光格的出光面尺寸范围为10μm～500μm。
  15. 根据权利要求1～11中任意一项所述的薄膜型半导体芯片结构，其特征在于：所述至少一个光电转换层具有PN结、多量子阱结构、双面异质PN结、 多量子线结构、多量子点结构或超晶格结构。
  16. 根据权利要求15所述的薄膜型半导体芯片结构，其特征在于：在所述至少一个光格内的所述第一透明导电层和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：
    第一电流限制层、
    所述至少一个光电转换层、
    第二电流限制层、
    第二透明导电层，以及
    粗化层。
  17. 根据权利要求16所述的薄膜型半导体芯片结构，其特征在于：所述第一透明导电层的上表面覆盖有增透层。
  18. 根据权利要求17所述的薄膜型半导体芯片结构，其特征在于：所述增透层的主要组成为氧化物、氮化物、氧化物、硒化物、硫化物、乙烯-四氟乙烯共聚物ETFE、聚对苯二甲酸乙二酯PET,聚丙烯PP，聚酰亚胺PI中的一种或者多种。
  19. 根据权利要求18所述的薄膜型半导体芯片结构，其特征在于：所述第一电流限制层和所述第二电流限制层的主要组成为：
    III-V族氮化物半导体器件中的Al xGa 1-xN、Al xGa yln 1-x-yN，
    III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，
    III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，
    III-V族锑化物半导体器件中的Al xGa 1-xSb、Al xGa yln 1-x-ySb，
    III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，或者
    III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，
    其中，x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
  20. 根据权利要求19所述的薄膜型半导体芯片结构，其特征在于：所述第一透明导电层的主要组成为：氧化铟锡，氧化镓铟锌，氧化锌，
    III-V族氮化物半导体器件中的Al xGa 1-xN、Al xGa yln 1-x-yN，
    III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，
    III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，
    III-V族锑化物半导体器件中的Al xGa 1-xSb、Al xGa yln 1-x-ySb，
    III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，或者
    III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，
    其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
  21. 根据权利要求20所述的薄膜型半导体芯片结构，其特征在于：所述第二透明导电层的主要组成为：
    III-V族氮化物半导体器件中的Al xGa 1-xN，Al xGa yln 1-x-yN，
    III-V族磷化物半导体器件中的Al xIn 1-xP、Al xGa 1-xP、Al xGa yIn 1-x-yP，
    III-V族砷化物半导体器件中的Al xGa 1-xAs、Al xGa yln 1-x-yAs，
    III-V族锑化物半导体器件中的Al xGa 1-xSb、Al xGa yln 1-x-ySb，
    III-V族砷磷化物半导体器件中的Al xGa 1-xAs zP 1-z、Al xGa yln 1-x-yAs zP 1-z，或者
    III-V族砷锑化物半导体器件中的Al xGa 1-xAs zSb 1-z、Al xGa yln 1-x-yAs zSb 1-z，
    其中x，y为III族原子间的摩尔量比值；z为V族原子间的摩尔比值，x,y,z取值在0～1之间。
  22. 一种发光二极管，其特征在于：具有权利要求16～21中任意一项所述的 薄膜型半导体芯片结构。
  23. 根据权利要求22所述的发光二极管，其特征在于：所述至少一个光电转换层具有多量子阱结构，主要组成为：GaInP、AlGaInP、AllnP、AlGaN、AlInGaN、GaN、InGaN、InGaAs或AlGaInAs。
  24. 一种激光器，其特征在于：具有权利要求15所述的薄膜型半导体芯片结构。
  25. 根据权利要求24所述的激光器，其特征在于：
    所述至少一个光格内，含有至少一个激光器发光结，所述至少一个激光器发光结包括，
    在所述第一透明导电层和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：
    第一电流限制层、
    所述至少一个光电转换层，以及
    第二电流限制层。
  26. 根据权利要求25所述的激光器，其特征在于：在所述至少一个光格内的所述至少一个激光器发光结和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第二透明导电层和DBR反射层。
  27. 根据权利要求24～26所述的激光器，其特征在于：所述第一透明导电层的上表面自上而下依次覆盖有增透层和DBR层。
  28. 根据权利要求27所述的激光器，其特征在于：所述至少一个光电转换层具有多量子阱结构，主要组成为InGaAs和AlGaAs。
  29. 一种光伏电池，其特征在于：具有权利要求1～11中任意一项所述的薄膜型半导体芯片结构，其中，所述至少一个光电转换层具有光子吸收结构。
  30. 根据权利要求29所述的光伏电池，其特征在于：
    所述至少一个光格内，含有至少一个光伏电池光电吸收结，所述至少一个光伏电池光电吸收结包括，
    在所述第一透明导电层和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：
    第一钝化层、
    所述至少一个光电转换层，以及
    第二钝化层。
  31. 据权利要求30所述的光伏电池，其特征在于：在所述至少一个光格内的所述至少一个光伏电池光电吸收结和所述金属衬底之间，以自上而下依次串联且均与所述金属侧壁绝缘的方式设置：第二透明导电层和粗化层。
  32. 根据权利要求29～31所述的光伏电池，其特征在于：所述第一透明导电层的上表面覆盖有增透层。
  33. 根据权利要求32所述的光伏电池，其特征在于：所述至少一个光电转换层主要组成为GaAs。
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