JPH11240919A5 - - Google Patents

Info

Publication number
JPH11240919A5
JPH11240919A5 JP1998349241A JP34924198A JPH11240919A5 JP H11240919 A5 JPH11240919 A5 JP H11240919A5 JP 1998349241 A JP1998349241 A JP 1998349241A JP 34924198 A JP34924198 A JP 34924198A JP H11240919 A5 JPH11240919 A5 JP H11240919A5
Authority
JP
Japan
Prior art keywords
group
substituent
optionally substituted
polymer
bridged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998349241A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11240919A (ja
Filing date
Publication date
Priority claimed from US08/963,922 external-priority patent/US6057083A/en
Application filed filed Critical
Publication of JPH11240919A publication Critical patent/JPH11240919A/ja
Publication of JPH11240919A5 publication Critical patent/JPH11240919A5/ja
Pending legal-status Critical Current

Links

JP10349241A 1997-11-04 1998-11-04 新規なポリマ―及びフォトレジスト組成物 Pending JPH11240919A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/963,922 US6057083A (en) 1997-11-04 1997-11-04 Polymers and photoresist compositions
US963922 1997-11-04

Publications (2)

Publication Number Publication Date
JPH11240919A JPH11240919A (ja) 1999-09-07
JPH11240919A5 true JPH11240919A5 (OSRAM) 2005-10-27

Family

ID=25507904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10349241A Pending JPH11240919A (ja) 1997-11-04 1998-11-04 新規なポリマ―及びフォトレジスト組成物

Country Status (5)

Country Link
US (2) US6057083A (OSRAM)
EP (1) EP0915382A3 (OSRAM)
JP (1) JPH11240919A (OSRAM)
KR (1) KR19990044985A (OSRAM)
TW (1) TW513620B (OSRAM)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
KR100382960B1 (ko) 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
CN1190706C (zh) * 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
KR20000047909A (ko) * 1998-12-10 2000-07-25 마티네즈 길러모 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
KR100604780B1 (ko) * 1999-07-23 2006-07-28 삼성전자주식회사 백본에 지환식 화합물과 아세탈 작용기를 가지는 감광성 폴리머와 이를 포함하는 감광성 코폴리머
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
US6492086B1 (en) 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
JP4991074B2 (ja) * 2000-02-27 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 光反応性酸発生剤およびそれを含有してなるフォトレジスト
US6306554B1 (en) * 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4554889B2 (ja) 2001-03-22 2010-09-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトレジスト組成物
DE10228628A1 (de) 2002-06-26 2004-01-22 Stockhausen Gmbh & Co. Kg Copolymerisate zur Vermeidung von Ablagerungen in wasserführenden Systemen, deren Herstellung und Verwendung
JP4371206B2 (ja) * 2002-09-30 2009-11-25 信越化学工業株式会社 エステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP4434762B2 (ja) * 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
TWI322334B (en) 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトレジスト組成物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI485064B (zh) 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
US9244355B2 (en) 2006-10-30 2016-01-26 Rohm And Haas Electronic Materials, Llc Compositions and processes for immersion lithography
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
US20080248331A1 (en) 2007-04-06 2008-10-09 Rohm And Haas Electronic Materials Llc Coating composition
CN101526737B (zh) 2007-11-05 2014-02-26 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
JP2009199061A (ja) 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
EP2189847A3 (en) 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2784584A1 (en) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2216684B1 (en) 2009-02-08 2015-10-07 Rohm and Haas Electronic Materials LLC Method of forming a photoresist image comprising an undercoat layer
JP5719514B2 (ja) 2009-02-08 2015-05-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
JP5814516B2 (ja) 2009-06-08 2015-11-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC フォトリソグラフィー方法
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
US8338077B2 (en) 2009-06-22 2012-12-25 Rohm And Haas Electronic Materials Llc Photoacid generators and photoresists comprising same
EP2360153B1 (en) 2009-12-10 2015-04-08 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
CN102212100A (zh) 2009-12-10 2011-10-12 罗门哈斯电子材料有限公司 胆酸酯光酸发生剂和包含该发生剂的光致抗蚀剂
CN102180822B (zh) 2009-12-14 2014-08-13 罗门哈斯电子材料有限公司 磺酰光酸产生剂和包含该磺酰光酸产生剂的光刻胶
KR101846835B1 (ko) 2009-12-15 2018-04-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 및 그 사용방법
JP2011175241A (ja) 2009-12-15 2011-09-08 Rohm & Haas Electronic Materials Llc フォトレジストおよびその使用方法
EP2336827B1 (en) 2009-12-15 2015-09-16 Rohm and Haas Electronic Materials LLC Method for providing an ion-implanted semiconductor substrate
CN102207678B (zh) 2010-01-25 2015-05-20 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 新規のポリマーおよびフォトレジスト組成物
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
EP2383611A3 (en) 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP2012073612A (ja) 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 糖成分を含む組成物およびフォトリソグラフィ方法
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472327A1 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9541834B2 (en) 2012-11-30 2017-01-10 Rohm And Haas Electronic Materials Llc Ionic thermal acid generators for low temperature applications
KR101785426B1 (ko) 2015-04-30 2017-10-17 롬엔드하스전자재료코리아유한회사 포토레지스트 조성물 및 방법
US11480878B2 (en) 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
CN108264605A (zh) 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC フォトレジスト組成物および方法
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
GB9105750D0 (en) * 1991-03-19 1991-05-01 Minnesota Mining & Mfg Speed stabilised positive-acting photoresist compositions
JPH04355761A (ja) * 1991-06-04 1992-12-09 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物及びこれを用いた感光性積層体
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
DE4319178C2 (de) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
JP3158710B2 (ja) * 1992-09-16 2001-04-23 日本ゼオン株式会社 化学増幅レジストパターンの形成方法
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
DE69406687T2 (de) * 1993-01-25 1998-05-14 At & T Corp Ein Verfahren zum gesteuerten Entschützen von Polymeren und Verfahren zur Herstellung einer Vorrichtung welches diese zum Teil entschützten Polymere für Photoresiste benutzt
JP3339157B2 (ja) * 1993-05-31 2002-10-28 ソニー株式会社 感光性組成物及びパターン形成方法
JP3297199B2 (ja) * 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH07191463A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd レジストおよびこれを使った半導体装置の製造方法
EP1248150A3 (en) * 1993-12-28 2003-11-05 Fujitsu Limited Radiation sensitive material and method for forming pattern
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
KR100195595B1 (ko) * 1994-07-11 1999-06-15 니시무로 타이죠 감광성 재료
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
JPH0927102A (ja) * 1995-07-07 1997-01-28 Hitachi Ltd 磁気記録装置
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
KR19990076735A (ko) * 1996-01-26 1999-10-15 나카노 카쯔히코 레지스트 조성물
EP0885405B1 (en) * 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
JP3346166B2 (ja) * 1996-05-17 2002-11-18 凸版印刷株式会社 カラーフィルタ
JP3206440B2 (ja) * 1996-06-28 2001-09-10 信越化学工業株式会社 化学増幅ポジ型レジスト材料
DE69821049T2 (de) * 1997-05-09 2004-10-21 Fuji Photo Film Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
US6054254A (en) * 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions

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