JPH11224938A5 - - Google Patents

Info

Publication number
JPH11224938A5
JPH11224938A5 JP1998339477A JP33947798A JPH11224938A5 JP H11224938 A5 JPH11224938 A5 JP H11224938A5 JP 1998339477 A JP1998339477 A JP 1998339477A JP 33947798 A JP33947798 A JP 33947798A JP H11224938 A5 JPH11224938 A5 JP H11224938A5
Authority
JP
Japan
Prior art keywords
film
capacitor
tungsten
refractory metal
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998339477A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11224938A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10339477A priority Critical patent/JPH11224938A/ja
Priority claimed from JP10339477A external-priority patent/JPH11224938A/ja
Publication of JPH11224938A publication Critical patent/JPH11224938A/ja
Publication of JPH11224938A5 publication Critical patent/JPH11224938A5/ja
Withdrawn legal-status Critical Current

Links

JP10339477A 1997-12-04 1998-11-30 半導体装置及びその製造方法 Withdrawn JPH11224938A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10339477A JPH11224938A (ja) 1997-12-04 1998-11-30 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-333985 1997-12-04
JP33398597 1997-12-04
JP10339477A JPH11224938A (ja) 1997-12-04 1998-11-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11224938A JPH11224938A (ja) 1999-08-17
JPH11224938A5 true JPH11224938A5 (enExample) 2005-11-04

Family

ID=26574692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10339477A Withdrawn JPH11224938A (ja) 1997-12-04 1998-11-30 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPH11224938A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373159B1 (ko) * 1999-11-09 2003-02-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100376268B1 (ko) * 1999-09-10 2003-03-17 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
JP2001217403A (ja) * 2000-02-04 2001-08-10 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP4485701B2 (ja) * 2000-03-02 2010-06-23 東京エレクトロン株式会社 半導体装置およびその製造方法
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
KR100411302B1 (ko) * 2001-06-30 2003-12-18 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법
KR100434701B1 (ko) * 2001-12-24 2004-06-07 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조방법
JP2004039821A (ja) 2002-07-02 2004-02-05 Elpida Memory Inc 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
KR960012298B1 (ko) 반도체장치의 제조방법
US7993992B2 (en) Semiconductor device and method of fabricating the same
JPH02273934A (ja) 半導体素子およびその製造方法
JPH11238736A (ja) 半導体デバイスの製造方法
US5599741A (en) Method for making semiconductor device with metal deposited on electron donating surface of gate electrode
KR100377593B1 (ko) 반도체장치및그제조방법
JP2004214602A (ja) 半導体素子のキャパシタ形成方法
JPH11224938A5 (enExample)
US5663103A (en) Method of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor
JPH0794731A (ja) 半導体装置及びその製造方法
US5324686A (en) Method of manufacturing semiconductor device using hydrogen as a diffusion controlling substance
JP3156590B2 (ja) 半導体装置及びその製造方法
JP3290506B2 (ja) 半導体装置の製造方法
JP2830705B2 (ja) 半導体装置の製造方法
JPH11224938A (ja) 半導体装置及びその製造方法
JP3033526B2 (ja) 半導体装置の製造方法
JPH11289087A (ja) 半導体装置及びその製造方法
JP3251256B2 (ja) 半導体装置の製造方法
JP3316848B2 (ja) 酸化タンタル膜を用いたキャパシタ構造の製造方法
JPS6315749B2 (enExample)
JP2738402B2 (ja) 半導体装置の製造方法
KR100315037B1 (ko) 반도체 소자의 게이트 전극 형성 방법
JPH0637108A (ja) 半導体装置の製造方法
JPH08306802A (ja) 半導体装置の製造方法
JP2600972B2 (ja) 半導体装置の製造方法