JPH11224938A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH11224938A
JPH11224938A JP10339477A JP33947798A JPH11224938A JP H11224938 A JPH11224938 A JP H11224938A JP 10339477 A JP10339477 A JP 10339477A JP 33947798 A JP33947798 A JP 33947798A JP H11224938 A JPH11224938 A JP H11224938A
Authority
JP
Japan
Prior art keywords
film
tungsten
capacitor
forming
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10339477A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11224938A5 (enExample
Inventor
Yuji Uchiyama
雄司 内山
Atsuhiro Tsukune
敦弘 筑根
Hisaya Suzuki
寿哉 鈴木
Takae Sukegawa
孝江 助川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10339477A priority Critical patent/JPH11224938A/ja
Publication of JPH11224938A publication Critical patent/JPH11224938A/ja
Publication of JPH11224938A5 publication Critical patent/JPH11224938A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
JP10339477A 1997-12-04 1998-11-30 半導体装置及びその製造方法 Withdrawn JPH11224938A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10339477A JPH11224938A (ja) 1997-12-04 1998-11-30 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-333985 1997-12-04
JP33398597 1997-12-04
JP10339477A JPH11224938A (ja) 1997-12-04 1998-11-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11224938A true JPH11224938A (ja) 1999-08-17
JPH11224938A5 JPH11224938A5 (enExample) 2005-11-04

Family

ID=26574692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10339477A Withdrawn JPH11224938A (ja) 1997-12-04 1998-11-30 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPH11224938A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001320032A (ja) * 2000-03-02 2001-11-16 Tokyo Electron Ltd 半導体装置およびその製造方法
KR100373159B1 (ko) * 1999-11-09 2003-02-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100376268B1 (ko) * 1999-09-10 2003-03-17 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100411302B1 (ko) * 2001-06-30 2003-12-18 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법
KR100434701B1 (ko) * 2001-12-24 2004-06-07 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조방법
US6939760B2 (en) 2002-07-02 2005-09-06 Elpida Memory, Inc. Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film
KR100763745B1 (ko) * 2000-02-04 2007-10-04 엘피다 메모리, 아이엔씨. 반도체 집적 회로 장치의 제조 방법
CN100446178C (zh) * 2000-06-08 2008-12-24 美光科技公司 形成方法以及包含钌和包含钨层的集成电路结构

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376268B1 (ko) * 1999-09-10 2003-03-17 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100373159B1 (ko) * 1999-11-09 2003-02-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100763745B1 (ko) * 2000-02-04 2007-10-04 엘피다 메모리, 아이엔씨. 반도체 집적 회로 장치의 제조 방법
JP2001320032A (ja) * 2000-03-02 2001-11-16 Tokyo Electron Ltd 半導体装置およびその製造方法
CN100446178C (zh) * 2000-06-08 2008-12-24 美光科技公司 形成方法以及包含钌和包含钨层的集成电路结构
KR100411302B1 (ko) * 2001-06-30 2003-12-18 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법
KR100434701B1 (ko) * 2001-12-24 2004-06-07 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조방법
US6939760B2 (en) 2002-07-02 2005-09-06 Elpida Memory, Inc. Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film

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