JPH11162973A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH11162973A JPH11162973A JP9327608A JP32760897A JPH11162973A JP H11162973 A JPH11162973 A JP H11162973A JP 9327608 A JP9327608 A JP 9327608A JP 32760897 A JP32760897 A JP 32760897A JP H11162973 A JPH11162973 A JP H11162973A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- ions
- implanted
- implantation step
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 150000002500 ions Chemical class 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 238000005468 ion implantation Methods 0.000 claims description 43
- 230000003647 oxidation Effects 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- -1 silicon ions Chemical class 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9327608A JPH11162973A (ja) | 1997-11-28 | 1997-11-28 | 半導体装置の製造方法 |
| KR1019980051392A KR19990045667A (ko) | 1997-11-28 | 1998-11-27 | 반도체 장치의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9327608A JPH11162973A (ja) | 1997-11-28 | 1997-11-28 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11162973A true JPH11162973A (ja) | 1999-06-18 |
Family
ID=18200966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9327608A Pending JPH11162973A (ja) | 1997-11-28 | 1997-11-28 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH11162973A (ko) |
| KR (1) | KR19990045667A (ko) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001244345A (ja) * | 2000-02-29 | 2001-09-07 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2001351989A (ja) * | 2000-06-05 | 2001-12-21 | Nec Corp | 半導体装置の製造方法 |
| WO2002005335A1 (en) * | 2000-07-10 | 2002-01-17 | Shin-Etsu Handotai Co.,Ltd. | Single crystal wafer and solar battery cell |
| KR20020014055A (ko) * | 2000-08-16 | 2002-02-25 | 박종섭 | 반도체 소자의 게이트 절연막 형성방법 |
| US6388504B1 (en) | 1999-09-17 | 2002-05-14 | Nec Corporation | Integrated circuit device with switching between active mode and standby mode controlled by digital circuit |
| JP2006222151A (ja) * | 2005-02-08 | 2006-08-24 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JP2009218267A (ja) * | 2008-03-07 | 2009-09-24 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
| JP2012089802A (ja) * | 2010-10-22 | 2012-05-10 | Toyota Motor Corp | 半導体装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4105353B2 (ja) * | 1999-07-26 | 2008-06-25 | 財団法人国際科学振興財団 | 半導体装置 |
-
1997
- 1997-11-28 JP JP9327608A patent/JPH11162973A/ja active Pending
-
1998
- 1998-11-27 KR KR1019980051392A patent/KR19990045667A/ko not_active Application Discontinuation
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6388504B1 (en) | 1999-09-17 | 2002-05-14 | Nec Corporation | Integrated circuit device with switching between active mode and standby mode controlled by digital circuit |
| US6664148B2 (en) | 1999-09-17 | 2003-12-16 | Nec Corporation | Integrated circuit device with switching between active mode and standby mode controlled by digital circuit |
| JP2001244345A (ja) * | 2000-02-29 | 2001-09-07 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2001351989A (ja) * | 2000-06-05 | 2001-12-21 | Nec Corp | 半導体装置の製造方法 |
| US6853037B2 (en) | 2000-06-05 | 2005-02-08 | Nec Electronics Corporation | Fabrication of low power CMOS device with high reliability |
| WO2002005335A1 (en) * | 2000-07-10 | 2002-01-17 | Shin-Etsu Handotai Co.,Ltd. | Single crystal wafer and solar battery cell |
| KR100804247B1 (ko) | 2000-07-10 | 2008-02-20 | 신에쯔 한도타이 가부시키가이샤 | 단결정 웨이퍼와 태양전지 셀 |
| US7459720B2 (en) * | 2000-07-10 | 2008-12-02 | Shin-Etsu Handotai Co., Ltd. | Single crystal wafer and solar battery cell |
| KR20020014055A (ko) * | 2000-08-16 | 2002-02-25 | 박종섭 | 반도체 소자의 게이트 절연막 형성방법 |
| JP2006222151A (ja) * | 2005-02-08 | 2006-08-24 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JP2009218267A (ja) * | 2008-03-07 | 2009-09-24 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
| JP2012089802A (ja) * | 2010-10-22 | 2012-05-10 | Toyota Motor Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990045667A (ko) | 1999-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20010314 |