JPH11121695A5 - - Google Patents

Info

Publication number
JPH11121695A5
JPH11121695A5 JP1997285715A JP28571597A JPH11121695A5 JP H11121695 A5 JPH11121695 A5 JP H11121695A5 JP 1997285715 A JP1997285715 A JP 1997285715A JP 28571597 A JP28571597 A JP 28571597A JP H11121695 A5 JPH11121695 A5 JP H11121695A5
Authority
JP
Japan
Prior art keywords
manufacturing
semiconductor device
wet etching
performing wet
ammonium monohydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997285715A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11121695A (ja
JP3979711B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP28571597A external-priority patent/JP3979711B2/ja
Priority to JP28571597A priority Critical patent/JP3979711B2/ja
Priority to US09/081,562 priority patent/US5940677A/en
Priority to TW087107785A priority patent/TW383487B/zh
Priority to CNB981167616A priority patent/CN1146982C/zh
Priority to KR1019980042539A priority patent/KR100326910B1/ko
Publication of JPH11121695A publication Critical patent/JPH11121695A/ja
Publication of JPH11121695A5 publication Critical patent/JPH11121695A5/ja
Publication of JP3979711B2 publication Critical patent/JP3979711B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP28571597A 1997-10-17 1997-10-17 半導体装置の製造方法 Expired - Fee Related JP3979711B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28571597A JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法
US09/081,562 US5940677A (en) 1997-10-17 1998-05-19 Fabricating method for semiconductor device
TW087107785A TW383487B (en) 1997-10-17 1998-05-20 Manufacturing method for semiconductor device
CNB981167616A CN1146982C (zh) 1997-10-17 1998-07-31 半导体器件的制造方法
KR1019980042539A KR100326910B1 (ko) 1997-10-17 1998-10-12 반도체장치의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28571597A JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH11121695A JPH11121695A (ja) 1999-04-30
JPH11121695A5 true JPH11121695A5 (enExample) 2005-06-09
JP3979711B2 JP3979711B2 (ja) 2007-09-19

Family

ID=17695096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28571597A Expired - Fee Related JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US5940677A (enExample)
JP (1) JP3979711B2 (enExample)
KR (1) KR100326910B1 (enExample)
CN (1) CN1146982C (enExample)
TW (1) TW383487B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258655B1 (en) * 1999-03-01 2001-07-10 Micron Technology, Inc. Method for improving the resistance degradation of thin film capacitors
US20050191765A1 (en) * 2000-08-04 2005-09-01 Cem Basceri Thin film capacitor with substantially homogenous stoichiometry
US6617266B2 (en) 2001-04-12 2003-09-09 Applied Materials, Inc. Barium strontium titanate annealing process
US6593181B2 (en) * 2001-04-20 2003-07-15 International Business Machines Corporation Tailored insulator properties for devices
KR20030013123A (ko) * 2001-08-07 2003-02-14 삼성전자주식회사 커패시터를 갖는 반도체 장치 및 그의 제조 방법
KR20030057204A (ko) * 2001-12-28 2003-07-04 동부전자 주식회사 절연막의 습식식각 또는 화학적 건식식각을 이용한 반도체커패시터 제조방법
JP3621695B2 (ja) * 2002-07-29 2005-02-16 株式会社東芝 半導体装置及び素子形成用基板
US6734057B2 (en) * 2002-09-27 2004-05-11 Infineon Technologies Ag Method of patterning capacitors and capacitors made thereby
US6784478B2 (en) * 2002-09-30 2004-08-31 Agere Systems Inc. Junction capacitor structure and fabrication method therefor in a dual damascene process
US7553755B2 (en) * 2006-01-18 2009-06-30 Macronix International Co., Ltd. Method for symmetric deposition of metal layer
CN102403227B (zh) * 2010-09-17 2013-10-23 中芯国际集成电路制造(北京)有限公司 台阶状硅锗源/漏结构的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
JPH0750395A (ja) * 1993-08-06 1995-02-21 Hitachi Ltd 半導体記憶装置およびその製造方法
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors

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