JP3979711B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3979711B2
JP3979711B2 JP28571597A JP28571597A JP3979711B2 JP 3979711 B2 JP3979711 B2 JP 3979711B2 JP 28571597 A JP28571597 A JP 28571597A JP 28571597 A JP28571597 A JP 28571597A JP 3979711 B2 JP3979711 B2 JP 3979711B2
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JP
Japan
Prior art keywords
film
amorphous
manufacturing
semiconductor device
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28571597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11121695A (ja
JPH11121695A5 (enExample
Inventor
智 山内
忍 竹▲廣▼
正樹 ▲吉▼丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP28571597A priority Critical patent/JP3979711B2/ja
Priority to US09/081,562 priority patent/US5940677A/en
Priority to TW087107785A priority patent/TW383487B/zh
Priority to CNB981167616A priority patent/CN1146982C/zh
Priority to KR1019980042539A priority patent/KR100326910B1/ko
Publication of JPH11121695A publication Critical patent/JPH11121695A/ja
Publication of JPH11121695A5 publication Critical patent/JPH11121695A5/ja
Application granted granted Critical
Publication of JP3979711B2 publication Critical patent/JP3979711B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP28571597A 1997-10-17 1997-10-17 半導体装置の製造方法 Expired - Fee Related JP3979711B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP28571597A JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法
US09/081,562 US5940677A (en) 1997-10-17 1998-05-19 Fabricating method for semiconductor device
TW087107785A TW383487B (en) 1997-10-17 1998-05-20 Manufacturing method for semiconductor device
CNB981167616A CN1146982C (zh) 1997-10-17 1998-07-31 半导体器件的制造方法
KR1019980042539A KR100326910B1 (ko) 1997-10-17 1998-10-12 반도체장치의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28571597A JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH11121695A JPH11121695A (ja) 1999-04-30
JPH11121695A5 JPH11121695A5 (enExample) 2005-06-09
JP3979711B2 true JP3979711B2 (ja) 2007-09-19

Family

ID=17695096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28571597A Expired - Fee Related JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US5940677A (enExample)
JP (1) JP3979711B2 (enExample)
KR (1) KR100326910B1 (enExample)
CN (1) CN1146982C (enExample)
TW (1) TW383487B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258655B1 (en) * 1999-03-01 2001-07-10 Micron Technology, Inc. Method for improving the resistance degradation of thin film capacitors
US20050191765A1 (en) * 2000-08-04 2005-09-01 Cem Basceri Thin film capacitor with substantially homogenous stoichiometry
US6617266B2 (en) 2001-04-12 2003-09-09 Applied Materials, Inc. Barium strontium titanate annealing process
US6593181B2 (en) * 2001-04-20 2003-07-15 International Business Machines Corporation Tailored insulator properties for devices
KR20030013123A (ko) * 2001-08-07 2003-02-14 삼성전자주식회사 커패시터를 갖는 반도체 장치 및 그의 제조 방법
KR20030057204A (ko) * 2001-12-28 2003-07-04 동부전자 주식회사 절연막의 습식식각 또는 화학적 건식식각을 이용한 반도체커패시터 제조방법
JP3621695B2 (ja) 2002-07-29 2005-02-16 株式会社東芝 半導体装置及び素子形成用基板
US6734057B2 (en) * 2002-09-27 2004-05-11 Infineon Technologies Ag Method of patterning capacitors and capacitors made thereby
US6784478B2 (en) * 2002-09-30 2004-08-31 Agere Systems Inc. Junction capacitor structure and fabrication method therefor in a dual damascene process
US7553755B2 (en) * 2006-01-18 2009-06-30 Macronix International Co., Ltd. Method for symmetric deposition of metal layer
CN102403227B (zh) * 2010-09-17 2013-10-23 中芯国际集成电路制造(北京)有限公司 台阶状硅锗源/漏结构的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
JPH0750395A (ja) * 1993-08-06 1995-02-21 Hitachi Ltd 半導体記憶装置およびその製造方法
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Also Published As

Publication number Publication date
JPH11121695A (ja) 1999-04-30
TW383487B (en) 2000-03-01
KR100326910B1 (ko) 2002-09-05
CN1215228A (zh) 1999-04-28
US5940677A (en) 1999-08-17
KR19990037030A (ko) 1999-05-25
CN1146982C (zh) 2004-04-21

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