TW383487B - Manufacturing method for semiconductor device - Google Patents
Manufacturing method for semiconductor device Download PDFInfo
- Publication number
- TW383487B TW383487B TW087107785A TW87107785A TW383487B TW 383487 B TW383487 B TW 383487B TW 087107785 A TW087107785 A TW 087107785A TW 87107785 A TW87107785 A TW 87107785A TW 383487 B TW383487 B TW 383487B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- manufacturing
- dielectric layer
- amorphous
- scope
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 238000001039 wet etching Methods 0.000 claims abstract description 15
- ZVVSSOQAYNYNPP-UHFFFAOYSA-N olaflur Chemical compound F.F.CCCCCCCCCCCCCCCCCCN(CCO)CCCN(CCO)CCO ZVVSSOQAYNYNPP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229960001245 olaflur Drugs 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 57
- 238000005530 etching Methods 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- -1 Argon ions Chemical class 0.000 claims description 7
- 229910052770 Uranium Inorganic materials 0.000 claims description 6
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910000487 osmium oxide Inorganic materials 0.000 claims description 4
- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 229910052778 Plutonium Inorganic materials 0.000 claims 1
- 230000002079 cooperative effect Effects 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 230000001131 transforming effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 193
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 56
- 235000012239 silicon dioxide Nutrition 0.000 description 25
- 239000000377 silicon dioxide Substances 0.000 description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- RKOQXLNCVUMHFI-UHFFFAOYSA-N [Hf].[Ba] Chemical compound [Hf].[Ba] RKOQXLNCVUMHFI-UHFFFAOYSA-N 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000001459 lithography Methods 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 235000015170 shellfish Nutrition 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 3
- UYYVHMCMPIPUEE-UHFFFAOYSA-N [Ba].[Os] Chemical compound [Ba].[Os] UYYVHMCMPIPUEE-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 210000002784 stomach Anatomy 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28571597A JP3979711B2 (ja) | 1997-10-17 | 1997-10-17 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW383487B true TW383487B (en) | 2000-03-01 |
Family
ID=17695096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087107785A TW383487B (en) | 1997-10-17 | 1998-05-20 | Manufacturing method for semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5940677A (enExample) |
| JP (1) | JP3979711B2 (enExample) |
| KR (1) | KR100326910B1 (enExample) |
| CN (1) | CN1146982C (enExample) |
| TW (1) | TW383487B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258655B1 (en) * | 1999-03-01 | 2001-07-10 | Micron Technology, Inc. | Method for improving the resistance degradation of thin film capacitors |
| US20050191765A1 (en) * | 2000-08-04 | 2005-09-01 | Cem Basceri | Thin film capacitor with substantially homogenous stoichiometry |
| US6617266B2 (en) | 2001-04-12 | 2003-09-09 | Applied Materials, Inc. | Barium strontium titanate annealing process |
| US6593181B2 (en) * | 2001-04-20 | 2003-07-15 | International Business Machines Corporation | Tailored insulator properties for devices |
| KR20030013123A (ko) * | 2001-08-07 | 2003-02-14 | 삼성전자주식회사 | 커패시터를 갖는 반도체 장치 및 그의 제조 방법 |
| KR20030057204A (ko) * | 2001-12-28 | 2003-07-04 | 동부전자 주식회사 | 절연막의 습식식각 또는 화학적 건식식각을 이용한 반도체커패시터 제조방법 |
| JP3621695B2 (ja) | 2002-07-29 | 2005-02-16 | 株式会社東芝 | 半導体装置及び素子形成用基板 |
| US6734057B2 (en) * | 2002-09-27 | 2004-05-11 | Infineon Technologies Ag | Method of patterning capacitors and capacitors made thereby |
| US6784478B2 (en) * | 2002-09-30 | 2004-08-31 | Agere Systems Inc. | Junction capacitor structure and fabrication method therefor in a dual damascene process |
| US7553755B2 (en) * | 2006-01-18 | 2009-06-30 | Macronix International Co., Ltd. | Method for symmetric deposition of metal layer |
| CN102403227B (zh) * | 2010-09-17 | 2013-10-23 | 中芯国际集成电路制造(北京)有限公司 | 台阶状硅锗源/漏结构的制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0516031A1 (en) * | 1991-05-29 | 1992-12-02 | Ramtron International Corporation | Stacked ferroelectric memory cell and method |
| JPH0750395A (ja) * | 1993-08-06 | 1995-02-21 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
| US5555486A (en) * | 1994-12-29 | 1996-09-10 | North Carolina State University | Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
-
1997
- 1997-10-17 JP JP28571597A patent/JP3979711B2/ja not_active Expired - Fee Related
-
1998
- 1998-05-19 US US09/081,562 patent/US5940677A/en not_active Expired - Lifetime
- 1998-05-20 TW TW087107785A patent/TW383487B/zh not_active IP Right Cessation
- 1998-07-31 CN CNB981167616A patent/CN1146982C/zh not_active Expired - Fee Related
- 1998-10-12 KR KR1019980042539A patent/KR100326910B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3979711B2 (ja) | 2007-09-19 |
| JPH11121695A (ja) | 1999-04-30 |
| KR100326910B1 (ko) | 2002-09-05 |
| CN1215228A (zh) | 1999-04-28 |
| US5940677A (en) | 1999-08-17 |
| KR19990037030A (ko) | 1999-05-25 |
| CN1146982C (zh) | 2004-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100493040B1 (ko) | 반도체 소자의 커패시터 및 그 제조방법 | |
| KR0147640B1 (ko) | 반도체 장치의 커패시터 및 그 제조방법 | |
| EP1383162B1 (en) | Deposition method of dielectric layer | |
| KR100297210B1 (ko) | 강유전체커패시터및다른커패시터구조체를위한고온전극-배리어 | |
| TW522550B (en) | Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same | |
| TW383487B (en) | Manufacturing method for semiconductor device | |
| TW495949B (en) | Method of fabricating ruthenium-based contact plug for memory devices | |
| CN1223001C (zh) | 具有接触电容器电极的插塞的半导体存储器及其制备方法 | |
| TW515091B (en) | High dielectric capacitor and method for fabricating thereof | |
| KR20000041957A (ko) | 반도체 디램 셀 캐패시터의 제조 방법 | |
| KR20030046126A (ko) | 금속-절연체-금속 캐패시터 및 그 제조방법 | |
| TW448501B (en) | Manufacturing of ferroelectric memory cell | |
| JPH1154703A (ja) | 高誘電体キャパシタの製造方法 | |
| KR20060092643A (ko) | 반도체 메모리 소자 및 그 제조 방법 | |
| TW417279B (en) | Circuit-arrangement with at least one capacitor and its production method | |
| KR100265333B1 (ko) | 반도체 장치의 고유전체 캐패시터 제조방법 | |
| TW311258B (en) | Manufacturing method of stack capacitor of dynamic random access memory | |
| TW508796B (en) | Ferroelectric device structure | |
| KR100533991B1 (ko) | 반도체 장치의 고유전체 캐패시터 제조방법 | |
| KR100228764B1 (ko) | 캐패시터 하부 전극 형성방법 | |
| KR970054005A (ko) | 반도체소자 캐패시터 형성방법 | |
| TW559987B (en) | High-k dielectric capacitor and method for manufacturing the same | |
| KR100235955B1 (ko) | 반도체 소자의 캐패시터 제조방법 | |
| TW388987B (en) | Method for forming a DRAM capacitor | |
| US20060231878A1 (en) | Semiconductor device and method for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |