JP2001093882A5 - - Google Patents

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Publication number
JP2001093882A5
JP2001093882A5 JP1999268328A JP26832899A JP2001093882A5 JP 2001093882 A5 JP2001093882 A5 JP 2001093882A5 JP 1999268328 A JP1999268328 A JP 1999268328A JP 26832899 A JP26832899 A JP 26832899A JP 2001093882 A5 JP2001093882 A5 JP 2001093882A5
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JP
Japan
Prior art keywords
substrate
etch
plasma
introducing
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999268328A
Other languages
English (en)
Japanese (ja)
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JP2001093882A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26832899A priority Critical patent/JP2001093882A/ja
Priority claimed from JP26832899A external-priority patent/JP2001093882A/ja
Publication of JP2001093882A publication Critical patent/JP2001093882A/ja
Publication of JP2001093882A5 publication Critical patent/JP2001093882A5/ja
Pending legal-status Critical Current

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JP26832899A 1999-09-22 1999-09-22 温度測定装置、及びその温度測定装置が設けられた真空処理装置 Pending JP2001093882A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26832899A JP2001093882A (ja) 1999-09-22 1999-09-22 温度測定装置、及びその温度測定装置が設けられた真空処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26832899A JP2001093882A (ja) 1999-09-22 1999-09-22 温度測定装置、及びその温度測定装置が設けられた真空処理装置

Publications (2)

Publication Number Publication Date
JP2001093882A JP2001093882A (ja) 2001-04-06
JP2001093882A5 true JP2001093882A5 (enExample) 2005-11-04

Family

ID=17457026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26832899A Pending JP2001093882A (ja) 1999-09-22 1999-09-22 温度測定装置、及びその温度測定装置が設けられた真空処理装置

Country Status (1)

Country Link
JP (1) JP2001093882A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI320951B (en) * 2002-08-13 2010-02-21 Lam Res Corp Methods for in situ substrate temperature monitoring by electromagnetic radiation emission
US7341673B2 (en) 2003-08-12 2008-03-11 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
US7235155B2 (en) * 2003-03-14 2007-06-26 Tokyo Electron Limited Method and apparatus for monitoring plasma conditions using a monitoring ring
US7112763B2 (en) * 2004-10-26 2006-09-26 Applied Materials, Inc. Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers
JP2010025756A (ja) * 2008-07-18 2010-02-04 Fuji Electric Systems Co Ltd 温度計測装置及び温度分布計測システム
JP5577160B2 (ja) * 2010-06-07 2014-08-20 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6295674B2 (ja) * 2014-01-20 2018-03-20 ウシオ電機株式会社 熱処理装置およびランプ制御方法
CN112415621A (zh) * 2020-12-09 2021-02-26 四川航天计量测试研究所 一种微重力环境下微小物质装载装置及方法
CN113970571A (zh) * 2021-10-25 2022-01-25 攀钢集团攀枝花钢铁研究院有限公司 简易的黑度系数比对装置及黑度系数快速测定方法

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