JP2001093882A5 - - Google Patents
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- Publication number
- JP2001093882A5 JP2001093882A5 JP1999268328A JP26832899A JP2001093882A5 JP 2001093882 A5 JP2001093882 A5 JP 2001093882A5 JP 1999268328 A JP1999268328 A JP 1999268328A JP 26832899 A JP26832899 A JP 26832899A JP 2001093882 A5 JP2001093882 A5 JP 2001093882A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etch
- plasma
- introducing
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 3
- 210000002381 Plasma Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Description
基板12が所定温度に昇温したところでガス導入系13からエッチングガスを導入すると共にカソード電極23に電圧を印加し、基板12表面にプラズマを生成させ、基板12のエッチングを行う。
A voltage is applied to the cathode electrode 23 with the substrate 12 to introducing an etching gas from the gas introduction system 13 was heated to a predetermined temperature, the substrate 12 surface to produce a plasma, to etch the substrate 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26832899A JP2001093882A (en) | 1999-09-22 | 1999-09-22 | Temperature measuring device and vacuum treating device equipped with the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26832899A JP2001093882A (en) | 1999-09-22 | 1999-09-22 | Temperature measuring device and vacuum treating device equipped with the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001093882A JP2001093882A (en) | 2001-04-06 |
JP2001093882A5 true JP2001093882A5 (en) | 2005-11-04 |
Family
ID=17457026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26832899A Pending JP2001093882A (en) | 1999-09-22 | 1999-09-22 | Temperature measuring device and vacuum treating device equipped with the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001093882A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI320951B (en) * | 2002-08-13 | 2010-02-21 | Lam Res Corp | Methods for in situ substrate temperature monitoring by electromagnetic radiation emission |
US7341673B2 (en) | 2003-08-12 | 2008-03-11 | Lam Research Corporation | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission |
US7235155B2 (en) * | 2003-03-14 | 2007-06-26 | Tokyo Electron Limited | Method and apparatus for monitoring plasma conditions using a monitoring ring |
US7112763B2 (en) * | 2004-10-26 | 2006-09-26 | Applied Materials, Inc. | Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers |
JP2010025756A (en) * | 2008-07-18 | 2010-02-04 | Fuji Electric Systems Co Ltd | Temperature measuring instrument and temperature distribution measuring system |
JP5577160B2 (en) * | 2010-06-07 | 2014-08-20 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
JP6295674B2 (en) * | 2014-01-20 | 2018-03-20 | ウシオ電機株式会社 | Heat treatment apparatus and lamp control method |
CN113970571A (en) * | 2021-10-25 | 2022-01-25 | 攀钢集团攀枝花钢铁研究院有限公司 | Simple blackness coefficient comparison device and blackness coefficient rapid determination method |
-
1999
- 1999-09-22 JP JP26832899A patent/JP2001093882A/en active Pending
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