JPH11100274A - 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 - Google Patents
窒化珪素質焼結体、その製造方法及びそれを用いた回路基板Info
- Publication number
- JPH11100274A JPH11100274A JP9261561A JP26156197A JPH11100274A JP H11100274 A JPH11100274 A JP H11100274A JP 9261561 A JP9261561 A JP 9261561A JP 26156197 A JP26156197 A JP 26156197A JP H11100274 A JPH11100274 A JP H11100274A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- sintered body
- sio
- phase
- thermal conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 143
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 143
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002245 particle Substances 0.000 claims abstract description 46
- 239000001301 oxygen Substances 0.000 claims abstract description 34
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 33
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 43
- 238000005245 sintering Methods 0.000 claims description 38
- 239000000843 powder Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 16
- 229910052727 yttrium Inorganic materials 0.000 claims description 16
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000002441 X-ray diffraction Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000013001 point bending Methods 0.000 abstract description 11
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 abstract 4
- 235000013616 tea Nutrition 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 53
- 238000000034 method Methods 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 239000007791 liquid phase Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 13
- 238000010304 firing Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000006104 solid solution Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000011158 quantitative evaluation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- LPLMZAJYUPAYQZ-UHFFFAOYSA-N diazanium;difluoride Chemical compound [NH4+].[NH4+].[F-].[F-] LPLMZAJYUPAYQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- -1 r and Hf Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000007582 slurry-cast process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9261561A JPH11100274A (ja) | 1997-09-26 | 1997-09-26 | 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9261561A JPH11100274A (ja) | 1997-09-26 | 1997-09-26 | 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11100274A true JPH11100274A (ja) | 1999-04-13 |
| JPH11100274A5 JPH11100274A5 (enExample) | 2004-11-11 |
Family
ID=17363620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9261561A Pending JPH11100274A (ja) | 1997-09-26 | 1997-09-26 | 窒化珪素質焼結体、その製造方法及びそれを用いた回路基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11100274A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001064080A (ja) * | 1999-06-23 | 2001-03-13 | Ngk Insulators Ltd | 窒化珪素焼結体及びその製造方法 |
| JP2002029851A (ja) * | 2000-07-17 | 2002-01-29 | Denki Kagaku Kogyo Kk | 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体 |
| JP2009029665A (ja) * | 2007-07-27 | 2009-02-12 | Kyocera Corp | 回路基板およびその製法 |
| JP2015081205A (ja) * | 2013-10-21 | 2015-04-27 | 独立行政法人産業技術総合研究所 | 窒化ケイ素フィラー、樹脂複合物、絶縁基板、半導体封止材 |
| JPWO2020203683A1 (enExample) * | 2019-03-29 | 2020-10-08 | ||
| WO2021053857A1 (en) | 2019-09-17 | 2021-03-25 | Kabushiki Kaisha Toshiba | Structure and bonded body |
| US11355416B2 (en) | 2020-03-19 | 2022-06-07 | Kabushiki Kaisha Toshiba | Structure and joined composite |
| WO2025127130A1 (ja) * | 2023-12-14 | 2025-06-19 | 株式会社 東芝 | 窒化珪素焼結体及び窒化珪素回路基板 |
-
1997
- 1997-09-26 JP JP9261561A patent/JPH11100274A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001064080A (ja) * | 1999-06-23 | 2001-03-13 | Ngk Insulators Ltd | 窒化珪素焼結体及びその製造方法 |
| JP2002029851A (ja) * | 2000-07-17 | 2002-01-29 | Denki Kagaku Kogyo Kk | 窒化珪素質組成物、それを用いた窒化珪素質焼結体の製造方法と窒化珪素質焼結体 |
| JP2009029665A (ja) * | 2007-07-27 | 2009-02-12 | Kyocera Corp | 回路基板およびその製法 |
| JP2015081205A (ja) * | 2013-10-21 | 2015-04-27 | 独立行政法人産業技術総合研究所 | 窒化ケイ素フィラー、樹脂複合物、絶縁基板、半導体封止材 |
| JPWO2020203683A1 (enExample) * | 2019-03-29 | 2020-10-08 | ||
| CN113614910A (zh) * | 2019-03-29 | 2021-11-05 | 电化株式会社 | 氮化硅烧结体及其制造方法、以及层叠体及电力模组 |
| EP3951857A4 (en) * | 2019-03-29 | 2022-05-18 | Denka Company Limited | SILICON NITRIDE SINTERED BODY, METHOD OF PRODUCTION, MULTILAYER BODY AND POWER MODULE |
| WO2021053857A1 (en) | 2019-09-17 | 2021-03-25 | Kabushiki Kaisha Toshiba | Structure and bonded body |
| US12308301B2 (en) | 2019-09-17 | 2025-05-20 | Kabushiki Kaisha Toshiba | Structure and bonded body |
| US11355416B2 (en) | 2020-03-19 | 2022-06-07 | Kabushiki Kaisha Toshiba | Structure and joined composite |
| WO2025127130A1 (ja) * | 2023-12-14 | 2025-06-19 | 株式会社 東芝 | 窒化珪素焼結体及び窒化珪素回路基板 |
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