JPH1079445A - 半導体素子の配線形成方法 - Google Patents
半導体素子の配線形成方法Info
- Publication number
- JPH1079445A JPH1079445A JP9214907A JP21490797A JPH1079445A JP H1079445 A JPH1079445 A JP H1079445A JP 9214907 A JP9214907 A JP 9214907A JP 21490797 A JP21490797 A JP 21490797A JP H1079445 A JPH1079445 A JP H1079445A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- layer
- wiring
- metal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910000838 Al alloy Inorganic materials 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract 2
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 135
- 239000010408 film Substances 0.000 description 69
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960033146A KR100202672B1 (ko) | 1996-08-09 | 1996-08-09 | 반도체 소자의 배선 형성방법 |
| KR33146/1996 | 1996-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1079445A true JPH1079445A (ja) | 1998-03-24 |
Family
ID=19469174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9214907A Pending JPH1079445A (ja) | 1996-08-09 | 1997-08-08 | 半導体素子の配線形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH1079445A (de) |
| KR (1) | KR100202672B1 (de) |
| DE (1) | DE19729156A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2602818A1 (de) | 2011-12-09 | 2013-06-12 | Ipdia | Interposervorrichtung |
-
1996
- 1996-08-09 KR KR1019960033146A patent/KR100202672B1/ko not_active IP Right Cessation
-
1997
- 1997-07-08 DE DE19729156A patent/DE19729156A1/de not_active Withdrawn
- 1997-08-08 JP JP9214907A patent/JPH1079445A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE19729156A1 (de) | 1998-02-12 |
| KR100202672B1 (ko) | 1999-06-15 |
| KR19980014254A (ko) | 1998-05-25 |
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