JPH1064907A5 - - Google Patents

Info

Publication number
JPH1064907A5
JPH1064907A5 JP1996229444A JP22944496A JPH1064907A5 JP H1064907 A5 JPH1064907 A5 JP H1064907A5 JP 1996229444 A JP1996229444 A JP 1996229444A JP 22944496 A JP22944496 A JP 22944496A JP H1064907 A5 JPH1064907 A5 JP H1064907A5
Authority
JP
Japan
Prior art keywords
thin film
state device
conductive thin
amorphous thin
electrical solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996229444A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1064907A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8229444A priority Critical patent/JPH1064907A/ja
Priority claimed from JP8229444A external-priority patent/JPH1064907A/ja
Priority to US08/909,733 priority patent/US6054770A/en
Priority to KR1019970038258A priority patent/KR100320774B1/ko
Publication of JPH1064907A publication Critical patent/JPH1064907A/ja
Publication of JPH1064907A5 publication Critical patent/JPH1064907A5/ja
Pending legal-status Critical Current

Links

JP8229444A 1996-08-13 1996-08-13 電気的固体装置及びその製造方法 Pending JPH1064907A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8229444A JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法
US08/909,733 US6054770A (en) 1996-08-13 1997-08-12 Electric solid state device and method for manufacturing the device
KR1019970038258A KR100320774B1 (ko) 1996-08-13 1997-08-12 전기적고체장치및그장치의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8229444A JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH1064907A JPH1064907A (ja) 1998-03-06
JPH1064907A5 true JPH1064907A5 (OSRAM) 2004-08-26

Family

ID=16892314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8229444A Pending JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法

Country Status (3)

Country Link
US (1) US6054770A (OSRAM)
JP (1) JPH1064907A (OSRAM)
KR (1) KR100320774B1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340228A (ja) * 1998-05-28 1999-12-10 Fujitsu Ltd Ａｌ合金配線を有する半導体装置
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
JP3408527B2 (ja) * 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6800938B2 (en) * 2002-08-08 2004-10-05 International Business Machines Corporation Semiconductor device having amorphous barrier layer for copper metallurgy
KR100883041B1 (ko) * 2002-11-08 2009-02-09 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US6762501B1 (en) * 2003-04-14 2004-07-13 Texas Instruments Incorporated Low stress integrated circuit copper interconnect structures
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
US7227266B2 (en) * 2004-11-09 2007-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure to reduce stress induced voiding effect
JP2007214480A (ja) * 2006-02-13 2007-08-23 Showa Denko Kk ＧａＮ系半導体発光素子およびその製造方法
JP4970808B2 (ja) * 2006-03-01 2012-07-11 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
JP2008227274A (ja) * 2007-03-14 2008-09-25 Nec Electronics Corp 半導体装置の製造方法
WO2009128575A1 (en) * 2008-04-17 2009-10-22 University Of Ulsan Foundation For Industry Cooperation Low temperature polycrystalline growth
US20110140173A1 (en) * 2009-12-16 2011-06-16 National Semiconductor Corporation Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices
JP6346595B2 (ja) 2015-08-25 2018-06-20 東芝メモリ株式会社 半導体装置及びその製造方法
CN108962921B (zh) * 2017-05-18 2021-03-16 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
JP7166776B2 (ja) * 2018-04-04 2022-11-08 キヤノン株式会社 液体吐出ヘッド用基板の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743894A (en) * 1972-06-01 1973-07-03 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
JPH0779136B2 (ja) * 1986-06-06 1995-08-23 株式会社日立製作所 半導体装置
JPS63316456A (ja) * 1987-06-19 1988-12-23 Hitachi Ltd 半導体装置およびその製造方法
JP2680468B2 (ja) * 1989-07-01 1997-11-19 株式会社東芝 半導体装置および半導体装置の製造方法
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
JP2937613B2 (ja) * 1991-07-16 1999-08-23 日本電気株式会社 薄膜配線およびその製造方法
JP3033331B2 (ja) * 1992-02-10 2000-04-17 日本電気株式会社 薄膜配線の製造方法
JP3332456B2 (ja) * 1992-03-24 2002-10-07 株式会社東芝 半導体装置の製造方法及び半導体装置
JPH06268083A (ja) * 1993-03-11 1994-09-22 Sony Corp 半導体装置の配線
US5705429A (en) * 1993-10-04 1998-01-06 Yamaha Corporation Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius
JP3277098B2 (ja) * 1994-07-26 2002-04-22 株式会社東芝 半導体装置の製造方法
JPH0878659A (ja) * 1994-09-02 1996-03-22 Sanyo Electric Co Ltd 半導体デバイス及びその製造方法
US5580823A (en) * 1994-12-15 1996-12-03 Motorola, Inc. Process for fabricating a collimated metal layer and contact structure in a semiconductor device

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