JPH10308379A5 - - Google Patents

Info

Publication number
JPH10308379A5
JPH10308379A5 JP1998092965A JP9296598A JPH10308379A5 JP H10308379 A5 JPH10308379 A5 JP H10308379A5 JP 1998092965 A JP1998092965 A JP 1998092965A JP 9296598 A JP9296598 A JP 9296598A JP H10308379 A5 JPH10308379 A5 JP H10308379A5
Authority
JP
Japan
Prior art keywords
colloidal silica
silicon
polishing
neutral
aqueous suspension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998092965A
Other languages
English (en)
Japanese (ja)
Other versions
JP4233629B2 (ja
JPH10308379A (ja
Filing date
Publication date
Priority claimed from FR9704207A external-priority patent/FR2761629B1/fr
Application filed filed Critical
Publication of JPH10308379A publication Critical patent/JPH10308379A/ja
Publication of JPH10308379A5 publication Critical patent/JPH10308379A5/ja
Application granted granted Critical
Publication of JP4233629B2 publication Critical patent/JP4233629B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP9296598A 1997-04-07 1998-04-06 絶縁材料又は半導体の層のための新規な化学的機械的研磨法 Expired - Lifetime JP4233629B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9704207 1997-04-07
FR9704207A FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Publications (3)

Publication Number Publication Date
JPH10308379A JPH10308379A (ja) 1998-11-17
JPH10308379A5 true JPH10308379A5 (enExample) 2005-04-07
JP4233629B2 JP4233629B2 (ja) 2009-03-04

Family

ID=9505584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9296598A Expired - Lifetime JP4233629B2 (ja) 1997-04-07 1998-04-06 絶縁材料又は半導体の層のための新規な化学的機械的研磨法

Country Status (10)

Country Link
US (1) US6126518A (enExample)
EP (2) EP0878838B1 (enExample)
JP (1) JP4233629B2 (enExample)
KR (1) KR100510951B1 (enExample)
CN (1) CN1152416C (enExample)
AT (2) ATE291277T1 (enExample)
DE (1) DE69829329T2 (enExample)
FR (1) FR2761629B1 (enExample)
MY (1) MY119523A (enExample)
SG (1) SG77633A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2781922B1 (fr) 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP2002050594A (ja) * 2000-08-04 2002-02-15 Fuso Chemical Co Ltd コロイド状シリカスラリー
FR2819244B1 (fr) * 2001-01-09 2003-04-11 Clariant France Sa Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
FR2819245B1 (fr) 2001-01-09 2004-11-26 Clariant Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
US6939203B2 (en) * 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
US20070286773A1 (en) * 2002-05-16 2007-12-13 Micronit Microfluidics B.V. Microfluidic Device
ATE407096T1 (de) * 2002-05-16 2008-09-15 Micronit Microfluidics Bv Verfahren zur herstellung eines mikrofluidischen bauteiles
JP2004165613A (ja) * 2002-06-03 2004-06-10 Shipley Co Llc 電子デバイスの製造
KR101004525B1 (ko) * 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
KR101349983B1 (ko) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
KR101488444B1 (ko) * 2007-09-28 2015-01-30 니타 하스 인코포레이티드 연마조성물
DE102011079694A1 (de) 2011-07-25 2013-01-31 Carl Zeiss Smt Gmbh Verfahren zum Polieren einer Schicht aus amorphem Silizium
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
JP7528681B2 (ja) * 2020-09-29 2024-08-06 住友金属鉱山株式会社 ＳｉＣ多結晶基板の研磨方法
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US35420A (en) * 1862-05-27 And bdwaed joslin
US2744001A (en) * 1950-09-08 1956-05-01 Rare Earths Inc Polishing material and method of making same
US2680721A (en) * 1952-03-20 1954-06-08 Du Pont Process of increasing the size of unaggregated silica particles in an aqueous silicasuspension
DE1072974B (de) * 1955-12-22 1960-01-14 Th B. F. Goodrich Company, New York, N. Y. (V. St. A.) Verfahren zur Herstellung eines hellgefärbten bis weißen, Silicium und Sauerstoff enthaltenden Füllstoffs nach Patent 1 041 019
US3208823A (en) * 1958-10-20 1965-09-28 Philadelphia Quartz Co Finely divided silica product and its method of preparation
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3440174A (en) * 1965-04-26 1969-04-22 Nalco Chemical Co Method of making silica sols containing large particle size silica
US3867304A (en) * 1967-06-12 1975-02-18 Nalco Chemical Co Acidic stable salt-free silica sols
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
DE2629709C2 (de) * 1976-07-02 1982-06-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines metallionenfreien amorphen Siliciumdioxids und daraus hergestelltes Poliermittel zum mechanischen Polieren von Halbleiteroberflächen
US4435247A (en) * 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
EP0363100A3 (en) * 1988-10-02 1990-05-23 Canon Kabushiki Kaisha Selective polishing method
USRE35420E (en) 1991-02-11 1997-01-07 Micron Technology, Inc. Method of increasing capacitance by surface roughening in semiconductor wafer processing
US5395801A (en) * 1993-09-29 1995-03-07 Micron Semiconductor, Inc. Chemical-mechanical polishing processes of planarizing insulating layers
JP2719113B2 (ja) * 1994-05-24 1998-02-25 信越半導体株式会社 単結晶シリコンウェーハの歪付け方法
KR960041316A (ko) * 1995-05-22 1996-12-19 고사이 아키오 연마용 입상체, 이의 제조방법 및 이의 용도
US5575706A (en) * 1996-01-11 1996-11-19 Taiwan Semiconductor Manufacturing Company Ltd. Chemical/mechanical planarization (CMP) apparatus and polish method
DE19623062C2 (de) * 1996-06-10 1998-07-02 Bayer Ag Verfahren zur Herstellung salzarmer Kieselsoldispersionen in niedrigsiedenden Alkoholen
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride

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