US20060160475A1 - Chemical mechanical polishing compositions for metal and associated materials and method of using same - Google Patents
Chemical mechanical polishing compositions for metal and associated materials and method of using same Download PDFInfo
- Publication number
- US20060160475A1 US20060160475A1 US11/386,307 US38630706A US2006160475A1 US 20060160475 A1 US20060160475 A1 US 20060160475A1 US 38630706 A US38630706 A US 38630706A US 2006160475 A1 US2006160475 A1 US 2006160475A1
- Authority
- US
- United States
- Prior art keywords
- mechanical polishing
- chemical mechanical
- slurry
- polishing slurry
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 88
- 239000000463 material Substances 0.000 title claims abstract description 76
- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 239000000126 substance Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title description 20
- 239000002184 metal Substances 0.000 title description 20
- 239000002002 slurry Substances 0.000 claims abstract description 166
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000010949 copper Substances 0.000 claims abstract description 92
- 229910052802 copper Inorganic materials 0.000 claims abstract description 84
- 230000004888 barrier function Effects 0.000 claims abstract description 64
- 239000002245 particle Substances 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000003795 chemical substances by application Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 19
- -1 poly(styrene) Polymers 0.000 claims description 19
- 239000007800 oxidant agent Substances 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 16
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 12
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 11
- 239000012964 benzotriazole Substances 0.000 claims description 11
- 239000004094 surface-active agent Substances 0.000 claims description 11
- 230000003213 activating effect Effects 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 9
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 9
- 239000008139 complexing agent Substances 0.000 claims description 8
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 8
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 3
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 claims description 3
- 125000000129 anionic group Chemical group 0.000 claims description 3
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 claims description 3
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 claims description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 3
- 239000011118 polyvinyl acetate Substances 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 3
- 239000001230 potassium iodate Substances 0.000 claims description 3
- 229940093930 potassium iodate Drugs 0.000 claims description 3
- 235000006666 potassium iodate Nutrition 0.000 claims description 3
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 claims description 3
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 claims description 3
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 claims description 3
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 claims description 3
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 125000002091 cationic group Chemical group 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims 5
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 claims 2
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- VLVKSZHEHYYLBG-UHFFFAOYSA-N [NH4+].I(=O)(=O)(=O)[O-].[NH4+].I(=O)(=O)(=O)[O-] Chemical compound [NH4+].I(=O)(=O)(=O)[O-].[NH4+].I(=O)(=O)(=O)[O-] VLVKSZHEHYYLBG-UHFFFAOYSA-N 0.000 claims 1
- 239000004202 carbamide Substances 0.000 claims 1
- ILVXOBCQQYKLDS-UHFFFAOYSA-N pyridine N-oxide Chemical compound [O-][N+]1=CC=CC=C1 ILVXOBCQQYKLDS-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 48
- 235000012431 wafers Nutrition 0.000 description 41
- 238000009472 formulation Methods 0.000 description 37
- 239000000377 silicon dioxide Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000005054 agglomeration Methods 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 8
- 239000000306 component Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 239000003082 abrasive agent Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910001914 chlorine tetroxide Inorganic materials 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 2
- 150000001565 benzotriazoles Chemical class 0.000 description 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 2
- OSVXSBDYLRYLIG-UHFFFAOYSA-N chlorine dioxide Inorganic materials O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 2
- TVWHTOUAJSGEKT-UHFFFAOYSA-N chlorine trioxide Chemical compound [O]Cl(=O)=O TVWHTOUAJSGEKT-UHFFFAOYSA-N 0.000 description 2
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 2
- 229960003067 cystine Drugs 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000008103 glucose Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- 229920000867 polyelectrolyte Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 235000017858 Laurus nobilis Nutrition 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 235000005212 Terminalia tomentosa Nutrition 0.000 description 1
- 244000125380 Terminalia tomentosa Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- the present invention relates generally to the chemical mechanical polishing of semiconductor devices systems and methods, and more particularly, to a formulation and method for use in polishing metal films in semiconductor interconnection processes.
- the present invention relates to a chemical mechanical polishing composition for surfaces of a semiconductor wafer, and more particularly, to a chemical mechanical polishing slurry and a method for using the slurry to remove and polish copper containing materials, barrier materials and dielectric materials layered on semiconductor wafer surfaces.
- the semiconductor wafer typically includes a substrate, such as silicon, upon which dielectric materials, barrier materials, and metal conductors and interconnects are layered. These different materials have insulating, conductive or semi-conductive properties.
- Integrated circuits are formed by patterning regions into the substrate and depositing thereon multiple layers of dielectric material, barrier material, and metals.
- a layer of metal and a layer of a masking material called photoresist are deposited on a silicon wafer. Unwanted metal is then etched away with an appropriate chemical, leaving the desired pattern of wires or vias. Next, the spaces between the wires or vias are filled with silicon dioxide (an insulator), and finally the entire wafer surface is polished to remove excess insulator.
- the damascene method is used wherein an oxide layer is first deposited and the pattern of wires or vias is formed by etching the oxide. The metal is then deposited second.
- Step coverage is defined as a measure of how well a film conforms over an underlying step and is expressed by the ratio of the minimum thickness of a film as it crosses a step to the nominal thickness of the film over horizontal regions.
- the layers that are removed and polished consist of a copper layer (about 1-1.5 ⁇ m thick) on top of a thin copper seed layer (about 0.05-0.15 ⁇ m thick). These copper layers are separated from the dielectric material surface by a layer of barrier material (about 50-300 ⁇ thick).
- CMP Chemical Mechanical Polishing or Planarization
- a chemical process such as oxidation or chelation.
- CMP involves applying slurry, a solution of an abrasive and an active chemistry, to a silicon wafer or polishing pad that buffs the surface of a semiconductor wafer to achieve the removal, planarization, and polishing process.
- One key to obtaining good uniformity across the wafer surface is by a polishing formulation that has the appropriate selectivity for the material(s) to be removed. Good slurry distribution and uniform distribution of mechanical force are also key to obtaining good planarity. If appropriate film removal selectivity is not maintained dishing of copper and/or erosion of the dielectric may occur. Dishing may occur when the copper and barrier removal rates are disparate or when the chemistry is too active for the metal interconnect layer. Erosion occurs when the local dielectric removal rate is much higher than the metal rate (see FIGS. 1-5 ).
- Typical commercial CMP slurries used to remove overfill material and polish semiconductor wafer surfaces have a barrier material removal rate below 500 ⁇ /min. Further, these slurries have a copper to barrier material removal rate selectivity of greater than 4:1. This disparity in removal rates during the removal and polishing of the barrier material results in significant dishing of copper on the surface of the semiconductor wafer and/or poor removal of the barrier material.
- copper CMP often employs a two-step slurry approach.
- the slurry used in the first step is typically used to remove and planarize bulk copper and as such has a high copper removal rate, (e.g. 4000 ⁇ /min) and a comparatively low barrier material removal rate (e.g. 500 ⁇ /min).
- the slurry used in the second step is used for the barrier breakthrough step and finishing and as such has a relatively high barrier material removal rate (e.g. 1000 ⁇ /min), comparable or lower removal rate for copper and low removal rate on the dielectric material, (e.g. the rates for copper and dielectric (thermal oxide) should be lower than 500 ⁇ /min).
- Fumed or precipitated silica or alumina may also agglomerate to form larger, dense, hard particles or agglomerated precipitates over time. (See U.S. Pat. No. 5,527,423 to Neville, et al.). This produces defects in the form of scratches, voids, defects or pits on the polished wafer surface.
- the abrasives are inorganic oxide particles that have high hardness.
- defects in the form of micro-scratches are produced on copper surfaces during and after polishing.
- the scratches occur due to the solid abrasive, in particular alumina, which is the main material used as a metal polishing abrasive. Slurry remains behind in the micro-scratches causing the semiconductor device to fail. Micro scratches and poor planarization efficiency result in integrated circuits with increased defects and a lower yield.
- a still further object of the present invention is to provide a stable first-step polishing slurry comprising a moderately hard abrasive having a minimal particle size distribution.
- the present invention is directed to a stable, chemical mechanical polishing slurry comprising a first slurry, which has a high removal rate on copper and a low removal rate on barrier material and a second slurry, which has a high removal rate on barrier material and a low to moderate removal rate on copper and the associated dielectric material.
- the first slurry composition comprises at least a moderately hard organic polymeric abrasive, an oxidizing agent and an activating agent and the second slurry comprises at least a silica abrasive and an oxidizing agent.
- a method for chemical mechanical polishing of copper, barrier material and dielectric material with the polishing slurry of the present invention is also disclosed as the present invention.
- the stable slurry and method of using the slurry provide for removal of material and polishing of semiconductor wafer surfaces with significantly no dishing, or oxide erosion, with significantly no surface defects and good planarization efficiency.
- FIG. 1 is a cross-sectional view of a semiconductor wafer prior to chemical mechanical polishing.
- FIG. 2 is a cross sectional view of the semiconductor wafer of FIG. 1 following chemical mechanical polishing with the first slurry, according to one embodiment of the present invention.
- FIG. 3 is a cross sectional view of the semiconductor of FIG. 1 following chemical mechanical polishing with the first slurry, according to another embodiment of the present invention.
- FIG. 4 is a cross sectional view of the semiconductor wafer of FIG. 2 or FIG. 3 following chemical mechanical polishing with the second slurry, according to the present invention.
- FIG. 5 is a cross sectional view of a semiconductor wafer illustrating copper dishing.
- FIG. 6 is a cross sectional view of a semiconductor wafer illustrating oxide erosion.
- the present invention presents a novel, stable chemical-mechanical polishing (CMP) slurry that overcomes the deficiencies in the prior art while providing a manufacturable process that may be implemented in the semiconductor-manufacturing arena with little or no alterations to the current CMP systems and footprints.
- CMP chemical-mechanical polishing
- the stable CMP slurry and method of using such slurry provide for removal of material and polishing of semiconductor wafer surfaces with significantly improved defectivity including reduced dishing or oxide erosion, with significantly no surface defects and good planarization efficiency.
- the present invention provides a chemical mechanical polishing slurry composition and method of using such slurry for removing and polishing the bulk copper layer of a damascene processing step in the manufacturing of an integrated circuit. Further, the following invention provides a two-step CMP slurry comprising a first slurry formulation, which has a high removal rate on copper and a low removal rate on barrier material and a second slurry formulation that has a high removal rate on barrier material and a low to moderate removal rate on copper and the associated dielectric material.
- FIG. 1 illustrates a semiconductor wafer 10 prior to CMP.
- substrate 11 may be made of any conventional semiconductor materials, including silicon, germanium or silicon-germanium.
- dielectric material 12 which is preferentially silicon oxide, low k dielectrics comprised substantially of silicon oxide, a carbon containing silicon oxide or a fluoride doped silicon glass (FSG).
- barrier material 13 is typically about 50 to 300 ⁇ thick.
- the barrier material 13 may be any material conventionally used, but is typically chosen from the group of tungsten nitride, tantalum, tantalum nitride, titanium nitride, silicon doped tantalum nitride or silicon doped titanium nitride.
- a layer of copper 14 covers the barrier material layer 13 , and extends into trenches 14 a, 14 b, and 14 c.
- the copper layer 14 is usually about 1-to 1.5 ⁇ m thick and the copper layer 14 in FIG. 1 may include a thin copper seed layer, which is usually about 0.05-0.15 ⁇ m thick.
- the invention is a CMP slurry designed to polish copper 14 and associated barrier materials 13 such as tungsten nitride, tantalum, tantalum nitride, silicon doped tantalum nitride, titanium nitride and silicon doped titanium nitride.
- the chemical mechanical polishing slurry of the present invention is comprised of two parts.
- the first slurry is a copper selective slurry formulation used to remove the bulk copper down to the barrier layer ( FIG. 2 ).
- the first slurry has a high removal rate of copper and a low removal rate of barrier material.
- the second slurry formulation is selective to the barrier layer and removes the barrier material down to the dielectric material.
- the second slurry has a high removal rate of barrier and a low to moderate removal rate of copper and dielectric.
- FIG. 3 The various removal rates of the first and second slurries on various materials are shown in Table 1. In this way, two slurries together comprise a combined package to polish copper metallization schemes for integrated circuit manufacturing.
- the present invention includes a method for chemical mechanical polishing copper 14 , barrier material 13 and dielectric material 12 , comprising the following steps: (1) providing a first chemical mechanical polishing slurry comprising an organic polymeric abrasive, wherein said first slurry has a high removal rate on copper 14 and a low removal rate on barrier material 13 ; (2) chemical mechanical polishing a semiconductor wafer surface 10 with the first slurry; (3) providing a second chemical mechanical polishing slurry that has a high removal rate on barrier material 13 a low to moderate removal rate on copper 14 and a low to moderate removal rate on the dielectric material 12 ; and (4) chemical mechanical polishing the semiconductor wafer surface 10 with the second slurry.
- polishing instrument parameters such as down force (DF), flow rate (FR), table speed (TS), quill speed (QS), and pad type can be adjusted to effect the results of the CMP slurry.
- DF down force
- FR flow rate
- TS table speed
- QS quill speed
- pad type can be adjusted to effect the results of the CMP slurry.
- the down force is in a range from about 3 to 10 psi
- the flow rate is in a range of from about 120 to 200 mL/min
- the table speed is in a range of from about 35 to 200 rpm
- a quill speed in a range of from about 30 to 200 rpm
- an IC 1000 pad type an IC 1000 pad type.
- the polishing pad serves as a means of applying mechanical friction to the wafer surface.
- the optimum hardness of the pad is different depending on the object on which CMP is being performed.
- a hard polishing pad is preferred, such as the type manufactured by Rodel, 3804 East Watkins Street, Phoenix, Ariz. 85034 and sold under the brand name IC 1000.
- FIG. 2 illustrates the semiconductor wafer 10 of FIG. 1 , after steps (1) and (2) of the present method for CMP have been carried out, and the semiconductor wafer surface has been polished with the first slurry.
- FIG. 2 is compared to FIG. 1 , the top copper layer 14 in FIG. 1 has been preferentially removed, and only the copper in the trenches ( FIG. 2 ) 18 a, 18 b, and 18 c is left.
- the barrier material layer 17 is substantially in tact, and the dielectric material 16 based on substrate 15 is still unexposed.
- FIG. 3 illustrates the semiconductor wafer 10 of FIG. 1 , after steps (1) and (2) of the present method for CMP have been carried out, and the semiconductor wafer surface has been over-polished with the first slurry in order to remove all the bulk copper on top of the barrier layer, while leaving the barrier layer relatively in tact.
- the top copper layer 14 in FIG. 1 has been preferentially removed, and only the copper in the trenches ( FIG. 3 ) 20 a, 20 b, and 20 c is left.
- the barrier material layer 21 is substantially in tact, and the dielectric material 22 based on substrate 23 is still unexposed.
- FIG. 4 illustrates the semiconductor wafer 10 of FIGS. 1, 2 and 3 , after steps (3) and (4) of the present method for CMP have been carried out, and the semiconductor wafer surface has been polished with the second slurry.
- the barrier material layer 24 has been removed down to the dielectric material 25 .
- the second slurry also removed just enough of the copper in trenches 26 a, 26 b, and 26 c so that the surface of the semiconductor wafer 10 is flat and planar.
- the second slurry also serves to polish the newly exposed surface, including the dielectric material 25 , the barrier material 24 a, 24 b, 24 c, and the copper 26 a, 26 b, 26 c. All of these materials are based on substrate 27 .
- FIG. 5 shows a semiconductor wafer to which a CMP slurry has been applied, which had a higher selectivity for copper 28 a, 28 b, 28 c than for the barrier material 29 a, 29 b, 29 c or dielectric material 30 .
- FIG. 5 shows a semiconductor wafer to which a CMP slurry has been applied, which had a higher selectivity for copper 28 a, 28 b, 28 c than for the barrier material 29 a, 29 b, 29 c or dielectric material 30 .
- disparate amounts of copper are removed from the surface of the semiconductor wafer.
- This is known as copper dishing and is shown by the dish-like troughs 31 a, 31 b, and 31 c in the trenches of copper 28 a, 28 b, 28 c.
- the CMP slurry of the present invention and method of using this slurry greatly reduces copper dishing.
- FIG. 6 shows a semiconductor wafer to which a CMP slurry has been applied, which has a higher selectivity for the dielectric material 32 than for the barrier material 33 a, 33 b, 33 c, or copper 34 a, 34 b, 34 c.
- oxide erosion is shown by the indentions and/or reduction of the dielectric material 32 a, 32 b.
- the CMP slurry of the present invention and method of using this slurry greatly reduces oxide erosion.
- the present invention provides a novel first-step slurry polishing composition comprising an organic polymeric abrasive having little or no agglomeration over time.
- Stage 1 agglomeration involves agglomerated particles held together primarily by van der Waals forces.
- Stage 2 agglomeration can occur after stage 1 agglomeration, wherein the particles then fuse together over time, causing the particles to be primarily held together not by van der Waals forces, but rather by covalent (or similar-type high energy) bonding between the particles.
- the present first step slurry formulation avoids stage 1 and stage 2 agglomeration.
- the present invention provides a CMP slurry comprising a first step slurry composition useful for removal, planarization and polishing of metal layers from a semiconductor substrate.
- the composition comprises a novel organic polymeric abrasive that is moderately hard and does not agglomerate in the formulation over time or during use.
- the moderately hard nature of the polymeric abrasive provides for the removal of the softer copper layer while keeping the harder barrier and thermal oxide layer relatively intact.
- the abrasive component of the first step slurry may comprise any polymeric material
- the abrasive component may comprise any organic polymeric abrasive having a Moh's hardness of between 2 and 8 and more preferably between 2 and 6.
- the abrasive particles may be in any shape or form that sufficiently abrades the metal and/or metal oxide layer from the substrate surface.
- Specific examples of polymeric materials useful as abrasive components include but are not limited to poly (styrene), poly (ethers), poly (siloxanes), poly (vinyl acetate), poly (vinyl alcohol) and substituted versions and mixtures thereof. (See, http://www.24carat.co.uk/hardnessmohsscale.html for a description of Moh's hardness, incorporated herein by reference in its entirety.)
- the CMP slurry comprises a first slurry polishing formulation useful for removal and polishing of copper containing materials from a semiconductor substrate, wherein the formulation comprises poly (methyl methacrylate) as the abrasive.
- the poly (methyl methacrylate) particles have a particle size distribution in the range of from about 3 to 100 nm, more preferably from about 15 to 80 nm and most preferably from about 30 to 60 nm.
- the mean particle size distribution of the poly (methyl methacrylate) particles is in a range of from about 20 to 80 nm, more preferably from about 30 to 60 nm and most preferably the mean particles size is between about 40 and 45 nm.
- the specific gravity of the particles is between 1 and 1.5 g/mL.
- the poly (methyl methacrylate) or other polymeric abrasive particles of the present invention have an aggregate size distribution of less than 1.0 micron and an average or mean aggregate diameter of less than about 45 nm. These abrasive particles have a much milder hardness compared to alumina and silica abrasives.
- the first step slurry can employ polymeric constituents as the abrasive particles in the size range of 3 to 100 nm. These particles coupled with the step 1 formulation chemistry described below, allow the first-step slurry to achieve a high copper removal rate but a minimal barrier material removal rate.
- Poly (methyl methacrylate) with a narrow size distribution, minimizes micro scratch defects and provides superior removal rates on copper materials, greater than about 1000 ⁇ /min, more preferably greater than about 2000 ⁇ /min and most preferably greater than about 4000 ⁇ /min and low removal rates for barrier and dielectric. Further, such abrasives with a mean size of less than about 45 nm provide very good planarization efficiency without increased defectivity.
- the CMP slurry comprises a first step slurry polishing formulation for removing a copper containing layer from a substrate, said formulation comprising a polymeric abrasive, oxidizing agent and activating agent.
- the formulation has a pH in a range of from about 0.1 to 6.9, more preferably in the range of from about 1 to 5 and most preferably, the pH of the polishing formulation is in the range of from about 2 to 4.8.
- the pH of the solution is critical to achieving acceptable removal rates.
- oxidizing agent is defined as any substance which removes metal electrons and raises the atomic valence and includes but is not limited to hydrogen peroxide (H 2 O 2 ), ferric nitrate (Fe(NO 3 ) 3 ), potassium iodate (KIO 3 ), potassium permanganate (KMnO 4 ), nitric acid (HNO 3 ), ammonium chlorite (NH 4 ClO 2 ), ammonium chlorate (NH 4 ClO 3 ), ammonium iodate (NH 4 IO 3 ), ammonium perborate (NH 4 BO 3 ), ammonium perchlorate (NH 4 ClO 4 ), ammonium periodate (NH 4 IO 3 ), ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), tetramethylammonium chlorite ((N(CH 3 ) 4 )ClO 2 ), tetramethylammonium chlorate ((N(CH 3 ) 4 )ClO 2 ), t
- the term activating agent is defined as any substance that in the presence of a water containing solution solubilizes or etches the oxidized copper material.
- Copper activating agents useful in the present invention include but are not limited to mineral acids (i.e. hydrochloric acid, nitric acid), inorganic acids (i.e. phosphoric acid) and organic acids (i.e. citric acid, acetic acid and maleic acid).
- the activating agent of the present first step slurry is citric acid.
- the first step slurry composition of the present invention may comprise, a polymeic abrasive, an oxidizing agent, an activating agent, a corrosion inhibitor and optionally a cleaning agent.
- the first-step slurry composition comprises from about 0.1 to 50 percent colloidal poly (methyl methacrylate), from about 0.1 to 25 percent oxidizing agent; from about 0 to 5 percent activating agent; from about 0 to 3 percent corrosion inhibitor and from about 0 to 3 percent cleaning agent.
- the pH of the first-step slurry composition is between about 0.1 to 6.9 and more preferably between about 1 to 5.
- a corrosion inhibitor is defined as a substance that reacts with the fresh copper surface and/or oxidized copper thin film to passivate the copper layer and prevent excessive etching of the copper surface during CMP.
- the first slurry of the present invention is sufficiently benign to the metal surface being polished to have a static metal etch rate of less than 500 ⁇ , more preferably less than 200 ⁇ , and most preferably less than 50 ⁇ .
- a cleaning agent is defined as a substance that slowly etches, or chelates to the copper, leading to soluble copper complexes that can be readily removed during polishing.
- the corrosion inhibitor may be a carboxylic acid. More specifically, the carboxylic acid may be chosen from the group of glycine, oxalic acid, malonic acid, succinic acid and nitrilotriacetic acid. Alternatively, the carboxylic acid may be a dicarboxylic acid that preferentially has a nitrogen containing functional group. Preferably, the corrosion inhibitor is iminodiacetic acid. Other substances useful as passivating agents include but are not limited to benzotriazole (BTA), tolytriazole, BTA derivatives, such as BTA carboxylic acids, cystine, haloacetic acids, glucose and dodecyl mercaptan.
- BTA benzotriazole
- BTA derivatives such as BTA carboxylic acids, cystine, haloacetic acids, glucose and dodecyl mercaptan.
- the first step slurry formulation may further comprise potassium or ammonium hydroxide or other buffering agents in such amounts as to adjust the pH to the desired level.
- the first step slurry formulation is an aqueous mixture comprising (by weight percentage) 5 percent poly (methyl methacrylate) as the abrasive or 12.5 percent colloidal poly (methyl methacrylate) as abrasive; 0.1 percent of citric acid as activating agent; and 0.2 percent iminodiacetic acid as passivating agent.
- Ammonium hydroxide was used to adjust the pH to the desired level.
- the abrasive used in the preferred first-step slurry formulation of the present invention may be stabilized with a surfactant.
- the surfactant may be cationic or anionic.
- Preferably the surfactant is anionic.
- the surface charges that the surfactant imparts to the particles cause steric repulsion among the abrasive particles in order to keep the particles suspended in a colloidal state within the slurry composition.
- Anionic surfactants are ionic compounds, with the anion being the surface-active portion.
- the surfactant is selected from the group consisting of alkyl sulfates, carboxylates and alkyl phosphates having carbon backbones in the range of from C 10 to C 14 .
- the surfactant is a sulfate. More prefereably the surfactant is sodium laurel sulfate.
- stage 2 agglomeration may be inhibited.
- the surfactant and/or polyelectrolyte will tend to remain in close proximity to the slurry particles, thereby sterically hindering the particles from coming sufficiently close to one another to enable stage 2 agglomeration.
- Step coverage is defined as a measure of how well a film conforms over an underlying step and is expressed by the ratio of the minimum thickness of a film as it crosses a step to the nominal thickness of the film over horizontal regions.
- organic polymeric abrasive particles of the present invention have been directed to poly (methyl methacrylate), it is understood that the teachings herein have applicability to other organic polymeric materials such as poly (styrene), poly (ethers), poly (siloxanes), poly (vinyl acetate), poly (vinyl alcohol), poly (ethylene), poly (imides) and substituted versions thereof. Further, the organic polymeric abrasive particles may be utilized to polish other metal surfaces such as tungsten, aluminum and titanium as well as under layers such as titanium, titanium nitride and alloys of titanium/tungsten.
- the present invention provides a chemical mechanical polishing first-step slurry formulation for removing and polishing the bulk copper layer of a damascene processing step in the manufacturing of an integrated circuit.
- the bulk copper material layer has been removed exposing the underlying barrier layer.
- a second-step slurry is useful to remove the barrier layer and to complete the planarization of the wafer surface.
- the second step polishing which is also called a barrier break through step
- a high removal rate for barrier i.e. Ta or TaN
- a high selectivity of barrier to copper and to dielectric is desirable.
- the second step slurry formulation achieves removal rates of >1000 ⁇ /min for the barrier material.
- the present invention provides a two-step polishing formulation comprising first and second-step slurry compositions, wherein said first-step slurry comprises an organic polymeric abrasive and said second-step slurry comprises an abrasive, and an oxidizing agent, wherein the abrasive component is selected from the group consisting of silica, alumina, ceria and mixtures thereof.
- the instant invention relates to a second-step polishing slurry formulation comprising silica as abrasive particles, an oxidizing agent, and a passivating agent.
- the chemistry of the second-step slurry should be stable and have a pH in the range of about 4 to 10.
- the particles of the second step slurry formulation are precipitated silica.
- the precipitated particles usually range from about 3 to 100 nm in size and can be spherical.
- An alternative to precipitated silica particles in the second-step slurry is fumed silica.
- the fumed silica has a mean particle size of less than 700 nm.
- colloidal silica particles of the type described.
- the colloidal silica particles can range from about 3 to 70 nm in size, and can be spherical.
- the particles should have a narrow size distribution. More specifically, about 99.9% of the spherical colloidal particles should be within about 3 sigma of a mean particle size with negligible particles larger than about 500 nm.
- the second step slurry can employ either precipitated spherical silica particles in the size range of 3 to 100 nm, or fumed silica with mean particle size less than about 700 nm. These particles coupled with an oxidizing agent allow the second-step slurry to achieve high barrier material removal rates and low copper and dielectric removal rates (as shown in Table 1 heretofore). Colloidal silica, with a narrow size distribution, minimizes micro scratch defects and provides superior removal rates on barrier materials, greater than about 1000 ⁇ /min, and low removal rates for copper and barrier. Further, spherical silica abrasives with a mean size of less than about 100 nm provide very good planarization efficiency (See Table 1, hereinabove).
- the preferred oxidizing agent for the second step slurry is hydrogen peroxide (H 2 O 2 ).
- the oxidizing agent may be selected from the group consisting of: ferric nitrate (Fe(NO 3 ) 3 ), potassium iodate (KIO 3 ), potassium permanganate (KmnO 4 ), nitric acid (HNO 3 ), ammonium chlorite (NH 4 ClO 2 ), ammonium chlorate (NH 4 ClO 3 ), ammonium iodate (NH 4 IO 3 ), ammonium perborate (NH 4 BO 3 ), ammonium perchlorate (NH 4 ClO 4 ), ammonium periodate (NH 4 IO 3 ), ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), tetramethylammonium chlorite ((N(CH 3 ) 4 )ClO 2 ), tetramethylammonium chlorate ((N(CH 3 ) 4 )ClO 3 ),
- the passivating agent as used in the second step slurry is defined as any substance which when mixed with the second-step slurry composition, suppresses etching, while permitting a sufficient CMP rate to be obtained.
- the passivating agent in the second step slurry formulation is benzotriazole (referred to hereafter as BTA) or iminodiacetic acid (referred to hereafter as IDA).
- BTA benzotriazole
- IDA iminodiacetic acid
- Other substances useful as passivating agents include but are not limited to: tolytriazole, BTA derivatives, such as BTA carboxylic acids, cystine, haloacetic acids, glucose and dodecyl mercaptan.
- the cleaning agent or complexing agent should be a carboxylic acid. More specifically, the carboxylic acid may be chosen from the group of glycine, oxalic acid, malonic acid, succinic acid, nitrilotriacetic acid, and citric acid. Alternatively, the complexing agent may be a dicarboxylic acid that preferentially has a nitrogen containing functional group or an amine. In the most preferred form, the complexing agent for the second-step slurry composition is iminodiacetic acid or ethylenediamine.
- the second step-slurry composition may further comprise potassium or ammonium hydroxide or any weak organic base, such as tetramethyl ammonia, tetraethyl ammonia, and amines in such amounts as to adjust the pH to the desired level.
- the pH of the second-step slurry composition is from about 7.1 to 10 and more preferably, from about 7.9 to 8.8.
- the second step-slurry composition comprises from about 0 to 30 percent oxidizer, about 1 to 10 percent colloidal silica or precipitated silica, about 0.01 to 5 percent complexing agent, and about 0 to 5 percent passivating agent, and water.
- the second step-slurry composition comprises from about 0 to 15 percent oxidizer, about 5 to 10 percent colloidal silica or precipitated silica, about 0.05 to 1 percent complexing agent, and about 0.02 to 0.1 percent passivating agent, and water.
- the second-step slurry composition comprises 0.05 percent ethylenediamine as complexing agent and 5 percent colloidal silica.
- the present invention is directed to removal of copper, copper containing materials and related barriers, it is not thus limited to such.
- the present invention is useful for polishing and planarizing materials useful as interconnects and related barriers in semiconductor related applications including but not limited to aluminum, aluminum alloys, aluminum compounds having aluminum as its principal component, tungsten, tungsten alloys, tungsten compounds having tungsten as its principal component, (i.e., tungsten nitride), tantalum, tantalum nitride, silicon doped tantalum nitride, titanium, titanium alloys and titanium compounds having titanium as its principal component (i.e., titanium nitride and silicon doped titanium nitride).
- the pH, oxidizing agents, modifying agents, abrasive particle composition and size distribution, and weight percent were evaluated to establish a baseline for removal rates and selectivity for the second step slurry formulations.
- Table 3 outlines twelve formulations and polishing conditions for the second step polishing slurry tested on Ta, TaN, Cu and thermal oxide blanket wafers (Table 4).
- the various formulations comprise between 0 to 13 percent hydrogen peroxide (H 2 O 2 ) as oxidizing agent, 0 to 0.05 percent ethylenediamine as complexing agent, between 0 to 0.1 percent BTA, or between 0 to 0.2 percent iminodiacetic acid as passivating agent, and between 5 to 10 percent colloidal silica or 5 to 10 percent precipitated silica.
- the pH of the formulations ranged from 6.8 to 8.8.
- the polishing conditions ranged from table speed (TS) of 45 to 125 rpm, quill speed (QS) of 42 to 116 rpm, down force (DF) of 3.5 to 4 psi, and a flow rate (FR) of 160 mL/min.
- TS table speed
- QS quill speed
- DF down force
- FR flow rate
- Ta:Cu 166:1
- the Slurry 12 formulation which employed a 5 wt % colloidal silica, 0.5 wt. % H 2 O 2 , 0.1.wt. % BTA with a pH of 8 obtained a Ta:Cu:PETEOS of 60:1:30.
- the poly (methyl methacrylate) colloid of the step one slurry formulation shows outstanding chemical and mechanical stability.
- the particles did not show any significant changes in terms of particle size and particle size distribution after aging two months, that is, the mean particle size remains about 45 nm and the range of distribution is from about 5 nm to 100 nm.
- first and second slurries described herein may also be used in a method of chemical mechanical polishing as described above. Also, while this invention has been disclosed and discussed primarily in terms of specific embodiments thereof, it is not intended to be limited thererto. Other modifications and embodiments will be apparent to the skilled worker in the art.
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Abstract
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
Description
- The present invention relates generally to the chemical mechanical polishing of semiconductor devices systems and methods, and more particularly, to a formulation and method for use in polishing metal films in semiconductor interconnection processes.
- The present invention relates to a chemical mechanical polishing composition for surfaces of a semiconductor wafer, and more particularly, to a chemical mechanical polishing slurry and a method for using the slurry to remove and polish copper containing materials, barrier materials and dielectric materials layered on semiconductor wafer surfaces.
- Semiconductor wafers are used to form integrated circuits. The semiconductor wafer typically includes a substrate, such as silicon, upon which dielectric materials, barrier materials, and metal conductors and interconnects are layered. These different materials have insulating, conductive or semi-conductive properties. Integrated circuits are formed by patterning regions into the substrate and depositing thereon multiple layers of dielectric material, barrier material, and metals.
- In order to meet the higher speeds required in large scale integration (LSI), semiconductor manufacturers are looking to copper and its alloys as interconnect materials due to its decreased resistivity. Copper is also less vulnerable to electromigration than other metals such as aluminum and less likely to fracture under stress.
- In conventional deposition, a layer of metal and a layer of a masking material called photoresist are deposited on a silicon wafer. Unwanted metal is then etched away with an appropriate chemical, leaving the desired pattern of wires or vias. Next, the spaces between the wires or vias are filled with silicon dioxide (an insulator), and finally the entire wafer surface is polished to remove excess insulator. In copper deposition the damascene method is used wherein an oxide layer is first deposited and the pattern of wires or vias is formed by etching the oxide. The metal is then deposited second.
- As successive layers are deposited across previously patterned layers of an integrated circuit, elevational disparity or topography develops across the surface of each layer. If left unattended, the elevational disparities in each level of an integrated circuit can lead to various problems. For example, when dielectric, conductive, or semiconductive material is deposited over a topological surface having elevationally raised and recessed regions, step coverage problems may arise. Step coverage is defined as a measure of how well a film conforms over an underlying step and is expressed by the ratio of the minimum thickness of a film as it crosses a step to the nominal thickness of the film over horizontal regions.
- Typically for copper technology, the layers that are removed and polished consist of a copper layer (about 1-1.5 μm thick) on top of a thin copper seed layer (about 0.05-0.15 μm thick). These copper layers are separated from the dielectric material surface by a layer of barrier material (about 50-300 Å thick).
- In order to obtain the correct patterning, excess material used to form the layers on the substrate must be removed and or planarized. Further, to obtain efficient circuits, it is important to have a flat or planar semiconductor wafer surface. Thus, it is necessary to polish certain surfaces of a semiconductor wafer.
- Chemical Mechanical Polishing or Planarization (“CMP”) is a process in which material is removed from a surface of a semiconductor wafer, and the surface is polished (planarized) by coupling a physical process such as abrasion with a chemical process such as oxidation or chelation. In its most rudimentary form, CMP involves applying slurry, a solution of an abrasive and an active chemistry, to a silicon wafer or polishing pad that buffs the surface of a semiconductor wafer to achieve the removal, planarization, and polishing process.
- One key to obtaining good uniformity across the wafer surface is by a polishing formulation that has the appropriate selectivity for the material(s) to be removed. Good slurry distribution and uniform distribution of mechanical force are also key to obtaining good planarity. If appropriate film removal selectivity is not maintained dishing of copper and/or erosion of the dielectric may occur. Dishing may occur when the copper and barrier removal rates are disparate or when the chemistry is too active for the metal interconnect layer. Erosion occurs when the local dielectric removal rate is much higher than the metal rate (see
FIGS. 1-5 ). - Typical commercial CMP slurries used to remove overfill material and polish semiconductor wafer surfaces have a barrier material removal rate below 500 Å/min. Further, these slurries have a copper to barrier material removal rate selectivity of greater than 4:1. This disparity in removal rates during the removal and polishing of the barrier material results in significant dishing of copper on the surface of the semiconductor wafer and/or poor removal of the barrier material.
- As a potential solution, copper CMP often employs a two-step slurry approach. The slurry used in the first step is typically used to remove and planarize bulk copper and as such has a high copper removal rate, (e.g. 4000 Å/min) and a comparatively low barrier material removal rate (e.g. 500 Å/min). The slurry used in the second step is used for the barrier breakthrough step and finishing and as such has a relatively high barrier material removal rate (e.g. 1000 Å/min), comparable or lower removal rate for copper and low removal rate on the dielectric material, (e.g. the rates for copper and dielectric (thermal oxide) should be lower than 500 Å/min).
- Currently, commercially available copper slurries use particles such as fumed or precipitated silica or alumina as abrasives. These abrasives typically have large particle size distributions when suspended in the slurries. Particles of fumed alumina and silica have diameters around 700 nm and particle size distributions of >1 μm. Wide particle size distribution may significantly impact the planarization efficiency.
- Fumed or precipitated silica or alumina may also agglomerate to form larger, dense, hard particles or agglomerated precipitates over time. (See U.S. Pat. No. 5,527,423 to Neville, et al.). This produces defects in the form of scratches, voids, defects or pits on the polished wafer surface.
- Further, the abrasives are inorganic oxide particles that have high hardness. As a result, defects in the form of micro-scratches are produced on copper surfaces during and after polishing. The scratches occur due to the solid abrasive, in particular alumina, which is the main material used as a metal polishing abrasive. Slurry remains behind in the micro-scratches causing the semiconductor device to fail. Micro scratches and poor planarization efficiency result in integrated circuits with increased defects and a lower yield.
- Current second step slurries suffer from a low selectivity of barrier to metal, the best selectivity being about 6 to 1, while the selectivity of barrier to dielectric is in the range of from about 2 to 27. (See U.S. Pat. Nos. 6,063,306 to Kaufman, et al.; 5,676,587 to Landers, et al.; 6,001,730 to Farkas, et al.; and 6,242,351 to Li, et al.).
- Therefore, it is one object of the present invention to provide an improved slurry composition using an abrasive having a moderate hardness to remove a softer metal oxide layer while keeping the harder barrier layer and thermal oxide layer relatively intact.
- It is a further object of this invention to provide an improved two step slurry approach using a first polishing slurry having a high removal rate on metal and a high selectivity of metal to barrier and a second slurry also called a barrier break-through step having a high removal rate on barrier and a low to moderate removal rate on copper and dielectric.
- It is a further object of the present invention to provide a stable first-step polishing slurry comprising an abrasive that does not agglomerate over time to form hard, dense sediment.
- A still further object of the present invention is to provide a stable first-step polishing slurry comprising a moderately hard abrasive having a minimal particle size distribution.
- These and other objects and advantages of the invention will be apparent to those skilled in the art upon reading the following detailed description and upon reference to the drawings.
- The present invention is directed to a stable, chemical mechanical polishing slurry comprising a first slurry, which has a high removal rate on copper and a low removal rate on barrier material and a second slurry, which has a high removal rate on barrier material and a low to moderate removal rate on copper and the associated dielectric material. The first slurry composition comprises at least a moderately hard organic polymeric abrasive, an oxidizing agent and an activating agent and the second slurry comprises at least a silica abrasive and an oxidizing agent. Also disclosed as the present invention, is a method for chemical mechanical polishing of copper, barrier material and dielectric material with the polishing slurry of the present invention. As will become apparent from the discussion that follows, the stable slurry and method of using the slurry provide for removal of material and polishing of semiconductor wafer surfaces with significantly no dishing, or oxide erosion, with significantly no surface defects and good planarization efficiency.
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FIG. 1 is a cross-sectional view of a semiconductor wafer prior to chemical mechanical polishing. -
FIG. 2 is a cross sectional view of the semiconductor wafer ofFIG. 1 following chemical mechanical polishing with the first slurry, according to one embodiment of the present invention. -
FIG. 3 is a cross sectional view of the semiconductor ofFIG. 1 following chemical mechanical polishing with the first slurry, according to another embodiment of the present invention. -
FIG. 4 is a cross sectional view of the semiconductor wafer ofFIG. 2 orFIG. 3 following chemical mechanical polishing with the second slurry, according to the present invention. -
FIG. 5 is a cross sectional view of a semiconductor wafer illustrating copper dishing. -
FIG. 6 is a cross sectional view of a semiconductor wafer illustrating oxide erosion. - The disclosure of the following United States patent application, which is commonly owned by the assignee of the present application is hereby incorporated herein by reference in its entirety:
- U.S. patent application Ser. No. 09/562,298 filed on May 1, 2000 in the names of Thomas H. Baum, et al.
- The present invention presents a novel, stable chemical-mechanical polishing (CMP) slurry that overcomes the deficiencies in the prior art while providing a manufacturable process that may be implemented in the semiconductor-manufacturing arena with little or no alterations to the current CMP systems and footprints. As will become apparent from the examples that follow, the stable CMP slurry and method of using such slurry provide for removal of material and polishing of semiconductor wafer surfaces with significantly improved defectivity including reduced dishing or oxide erosion, with significantly no surface defects and good planarization efficiency.
- The present invention provides a chemical mechanical polishing slurry composition and method of using such slurry for removing and polishing the bulk copper layer of a damascene processing step in the manufacturing of an integrated circuit. Further, the following invention provides a two-step CMP slurry comprising a first slurry formulation, which has a high removal rate on copper and a low removal rate on barrier material and a second slurry formulation that has a high removal rate on barrier material and a low to moderate removal rate on copper and the associated dielectric material.
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FIG. 1 illustrates asemiconductor wafer 10 prior to CMP. As shown, substrate 11 may be made of any conventional semiconductor materials, including silicon, germanium or silicon-germanium. Layered on top of the substrate 11 isdielectric material 12, which is preferentially silicon oxide, low k dielectrics comprised substantially of silicon oxide, a carbon containing silicon oxide or a fluoride doped silicon glass (FSG). Layered on thedielectric material 12, isbarrier material 13. Thebarrier material layer 13 is typically about 50 to 300 Å thick. Thebarrier material 13 may be any material conventionally used, but is typically chosen from the group of tungsten nitride, tantalum, tantalum nitride, titanium nitride, silicon doped tantalum nitride or silicon doped titanium nitride. Finally, a layer ofcopper 14 covers thebarrier material layer 13, and extends into trenches 14 a, 14 b, and 14 c. Thecopper layer 14 is usually about 1-to 1.5 μm thick and thecopper layer 14 inFIG. 1 may include a thin copper seed layer, which is usually about 0.05-0.15 μm thick. - The invention is a CMP slurry designed to polish
copper 14 and associatedbarrier materials 13 such as tungsten nitride, tantalum, tantalum nitride, silicon doped tantalum nitride, titanium nitride and silicon doped titanium nitride. The chemical mechanical polishing slurry of the present invention is comprised of two parts. The first slurry is a copper selective slurry formulation used to remove the bulk copper down to the barrier layer (FIG. 2 ). The first slurry has a high removal rate of copper and a low removal rate of barrier material. The second slurry formulation is selective to the barrier layer and removes the barrier material down to the dielectric material. The second slurry has a high removal rate of barrier and a low to moderate removal rate of copper and dielectric. (FIG. 3 ). The various removal rates of the first and second slurries on various materials are shown in Table 1. In this way, two slurries together comprise a combined package to polish copper metallization schemes for integrated circuit manufacturing.TABLE 1 Removal Rates of the First and Second Slurries on Different Materials* Selectivity Selectivity First Slurry First Step Second Slurry Second Step Removal Rates Cu to Removal Rates Ta to Layer (Å/min) Material (Å/min) Material Copper 4100 — 1 60:1 Tantalum <8.2 >500 60 — Tantalum <8.2 >500 81 — Nitride Thermal <8.2 >500 31 2:1 Oxide
*(For the first step, Down Force = 4 psi, Flow Rate = 160 mL/min, Table Speed = 125 rpm, Quill Speed = 116 rpm, Pad Type = IC 1000 Subpad: Suba IV, For the second step, Down Force = 4 psi, Flow Rate = 160 mL/min, Table Speed = 45 rpm, Quill Speed = 42 rpm, Pad Type = IC 1000, Subpad: Suba IV)
- Referring to
FIG. 1 , In one embodiment, the present invention includes a method for chemical mechanical polishingcopper 14,barrier material 13 anddielectric material 12, comprising the following steps: (1) providing a first chemical mechanical polishing slurry comprising an organic polymeric abrasive, wherein said first slurry has a high removal rate oncopper 14 and a low removal rate onbarrier material 13; (2) chemical mechanical polishing asemiconductor wafer surface 10 with the first slurry; (3) providing a second chemical mechanical polishing slurry that has a high removal rate on barrier material 13 a low to moderate removal rate oncopper 14 and a low to moderate removal rate on thedielectric material 12; and (4) chemical mechanical polishing thesemiconductor wafer surface 10 with the second slurry. - Generally, the slurry is applied to a pad contained on a polishing instrument or directly dispensed onto the wafer to be processed. Polishing instrument parameters such as down force (DF), flow rate (FR), table speed (TS), quill speed (QS), and pad type can be adjusted to effect the results of the CMP slurry. Preferably the down force is in a range from about 3 to 10 psi, the flow rate is in a range of from about 120 to 200 mL/min, the table speed is in a range of from about 35 to 200 rpm, a quill speed in a range of from about 30 to 200 rpm, and an IC 1000 pad type.
- The polishing pad serves as a means of applying mechanical friction to the wafer surface. The optimum hardness of the pad is different depending on the object on which CMP is being performed. In the instant invention, a hard polishing pad is preferred, such as the type manufactured by Rodel, 3804 East Watkins Street, Phoenix, Ariz. 85034 and sold under the brand name IC 1000.
- According to one embodiment of the present invention,
FIG. 2 illustrates thesemiconductor wafer 10 ofFIG. 1 , after steps (1) and (2) of the present method for CMP have been carried out, and the semiconductor wafer surface has been polished with the first slurry. WhenFIG. 2 is compared toFIG. 1 , thetop copper layer 14 inFIG. 1 has been preferentially removed, and only the copper in the trenches (FIG. 2 ) 18 a, 18 b, and 18 c is left. As shown inFIG. 2 thebarrier material layer 17 is substantially in tact, and thedielectric material 16 based onsubstrate 15 is still unexposed. - According to a further embodiment of the present invention,
FIG. 3 illustrates thesemiconductor wafer 10 ofFIG. 1 , after steps (1) and (2) of the present method for CMP have been carried out, and the semiconductor wafer surface has been over-polished with the first slurry in order to remove all the bulk copper on top of the barrier layer, while leaving the barrier layer relatively in tact. WhenFIG. 3 is compared toFIG. 1 , thetop copper layer 14 inFIG. 1 has been preferentially removed, and only the copper in the trenches (FIG. 3 ) 20 a, 20 b, and 20 c is left. As shown inFIG. 3 thebarrier material layer 21 is substantially in tact, and thedielectric material 22 based onsubstrate 23 is still unexposed. - Similarly,
FIG. 4 illustrates thesemiconductor wafer 10 ofFIGS. 1, 2 and 3, after steps (3) and (4) of the present method for CMP have been carried out, and the semiconductor wafer surface has been polished with the second slurry. As shown inFIG. 4 , thebarrier material layer 24 has been removed down to thedielectric material 25. The second slurry also removed just enough of the copper in trenches 26 a, 26 b, and 26 c so that the surface of thesemiconductor wafer 10 is flat and planar. The second slurry also serves to polish the newly exposed surface, including thedielectric material 25, the barrier material 24 a, 24 b, 24 c, and the copper 26 a, 26 b, 26 c. All of these materials are based onsubstrate 27. - By using the first and second step slurry compositions of the claimed invention, with the selectivities described in Table 1, and following the described method, copper dishing (
FIG. 5 ) and oxide erosion (FIG. 6 ) can be minimized.FIG. 5 shows a semiconductor wafer to which a CMP slurry has been applied, which had a higher selectivity for copper 28 a, 28 b, 28 c than for the barrier material 29 a, 29 b, 29 c ordielectric material 30. As a result, disparate amounts of copper are removed from the surface of the semiconductor wafer. This is known as copper dishing and is shown by the dish-like troughs 31 a, 31 b, and 31 c in the trenches of copper 28 a, 28 b, 28 c. The CMP slurry of the present invention and method of using this slurry greatly reduces copper dishing. - Similarly,
FIG. 6 shows a semiconductor wafer to which a CMP slurry has been applied, which has a higher selectivity for thedielectric material 32 than for the barrier material 33 a, 33 b, 33 c, or copper 34 a, 34 b, 34 c. As a result, disparate amounts of dielectric material are removed from the surface of the semiconductor wafer. This is known as oxide erosion and is shown by the indentions and/or reduction of the dielectric material 32 a, 32 b. The CMP slurry of the present invention and method of using this slurry greatly reduces oxide erosion. - The present invention provides a novel first-step slurry polishing composition comprising an organic polymeric abrasive having little or no agglomeration over time.
- International patent PCT/US00/17046 teaches that agglomeration of abrasive particles occurs in two stages. Stage 1 agglomeration involves agglomerated particles held together primarily by van der Waals forces. Stage 2 agglomeration can occur after stage 1 agglomeration, wherein the particles then fuse together over time, causing the particles to be primarily held together not by van der Waals forces, but rather by covalent (or similar-type high energy) bonding between the particles. The present first step slurry formulation avoids stage 1 and stage 2 agglomeration.
- In one embodiment, the present invention provides a CMP slurry comprising a first step slurry composition useful for removal, planarization and polishing of metal layers from a semiconductor substrate. The composition comprises a novel organic polymeric abrasive that is moderately hard and does not agglomerate in the formulation over time or during use. The moderately hard nature of the polymeric abrasive provides for the removal of the softer copper layer while keeping the harder barrier and thermal oxide layer relatively intact.
- The abrasive component of the first step slurry may comprise any polymeric material In one embodiement, the abrasive component may comprise any organic polymeric abrasive having a Moh's hardness of between 2 and 8 and more preferably between 2 and 6. The abrasive particles may be in any shape or form that sufficiently abrades the metal and/or metal oxide layer from the substrate surface. Specific examples of polymeric materials useful as abrasive components include but are not limited to poly (styrene), poly (ethers), poly (siloxanes), poly (vinyl acetate), poly (vinyl alcohol) and substituted versions and mixtures thereof. (See, http://www.24carat.co.uk/hardnessmohsscale.html for a description of Moh's hardness, incorporated herein by reference in its entirety.)
- In a preferred embodiment, the CMP slurry comprises a first slurry polishing formulation useful for removal and polishing of copper containing materials from a semiconductor substrate, wherein the formulation comprises poly (methyl methacrylate) as the abrasive. Preferably, the poly (methyl methacrylate) particles have a particle size distribution in the range of from about 3 to 100 nm, more preferably from about 15 to 80 nm and most preferably from about 30 to 60 nm. Preferably the mean particle size distribution of the poly (methyl methacrylate) particles is in a range of from about 20 to 80 nm, more preferably from about 30 to 60 nm and most preferably the mean particles size is between about 40 and 45 nm. Preferably the specific gravity of the particles is between 1 and 1.5 g/mL.
- The poly (methyl methacrylate) or other polymeric abrasive particles of the present invention have an aggregate size distribution of less than 1.0 micron and an average or mean aggregate diameter of less than about 45 nm. These abrasive particles have a much milder hardness compared to alumina and silica abrasives.
- The first step slurry, thus, can employ polymeric constituents as the abrasive particles in the size range of 3 to 100 nm. These particles coupled with the step 1 formulation chemistry described below, allow the first-step slurry to achieve a high copper removal rate but a minimal barrier material removal rate. Poly (methyl methacrylate), with a narrow size distribution, minimizes micro scratch defects and provides superior removal rates on copper materials, greater than about 1000 Å/min, more preferably greater than about 2000 Å/min and most preferably greater than about 4000 Å/min and low removal rates for barrier and dielectric. Further, such abrasives with a mean size of less than about 45 nm provide very good planarization efficiency without increased defectivity.
- In a further embodiment the CMP slurry comprises a first step slurry polishing formulation for removing a copper containing layer from a substrate, said formulation comprising a polymeric abrasive, oxidizing agent and activating agent. Preferably the formulation has a pH in a range of from about 0.1 to 6.9, more preferably in the range of from about 1 to 5 and most preferably, the pH of the polishing formulation is in the range of from about 2 to 4.8. The pH of the solution is critical to achieving acceptable removal rates.
- As used herein, the term oxidizing agent is defined as any substance which removes metal electrons and raises the atomic valence and includes but is not limited to hydrogen peroxide (H2O2), ferric nitrate (Fe(NO3)3), potassium iodate (KIO3), potassium permanganate (KMnO4), nitric acid (HNO3), ammonium chlorite (NH4ClO2), ammonium chlorate (NH4ClO3), ammonium iodate (NH4IO3), ammonium perborate (NH4BO3), ammonium perchlorate (NH4ClO4), ammonium periodate (NH4IO3), ammonium persulfate ((NH4)2S2O8), tetramethylammonium chlorite ((N(CH3)4)ClO2), tetramethylammonium chlorate ((N(CH3)4)ClO3), tetramethylammonium iodate ((N(CH3)4)IO3), tetramethylammonium perborate ((N(CH3)4)BO3), tetramethylammonium perchlorate ((N(CH3)4)ClO4), tetramethylammonium periodate ((N(CH3)4)IO4), tetramethylammonium persulfate ((N(CH3)4)S2O8), and urea hydrogen peroxide ((CO(NH2)2)H2O2). The preferred oxidizing agents for the first-step slurry composition of the instant invention are hydrogen peroxide and iodate salts.
- Further, as used herein, the term activating agent is defined as any substance that in the presence of a water containing solution solubilizes or etches the oxidized copper material. Copper activating agents useful in the present invention include but are not limited to mineral acids (i.e. hydrochloric acid, nitric acid), inorganic acids (i.e. phosphoric acid) and organic acids (i.e. citric acid, acetic acid and maleic acid). Preferably the activating agent of the present first step slurry is citric acid.
- In a further embodiment, the first step slurry composition of the present invention, may comprise, a polymeic abrasive, an oxidizing agent, an activating agent, a corrosion inhibitor and optionally a cleaning agent. Preferably the first-step slurry composition comprises from about 0.1 to 50 percent colloidal poly (methyl methacrylate), from about 0.1 to 25 percent oxidizing agent; from about 0 to 5 percent activating agent; from about 0 to 3 percent corrosion inhibitor and from about 0 to 3 percent cleaning agent. Preferably the pH of the first-step slurry composition is between about 0.1 to 6.9 and more preferably between about 1 to 5.
- As used herein, a corrosion inhibitor is defined as a substance that reacts with the fresh copper surface and/or oxidized copper thin film to passivate the copper layer and prevent excessive etching of the copper surface during CMP. The first slurry of the present invention is sufficiently benign to the metal surface being polished to have a static metal etch rate of less than 500 Å, more preferably less than 200 Å, and most preferably less than 50 Å.
- As used herein, a cleaning agent is defined as a substance that slowly etches, or chelates to the copper, leading to soluble copper complexes that can be readily removed during polishing.
- The corrosion inhibitor may be a carboxylic acid. More specifically, the carboxylic acid may be chosen from the group of glycine, oxalic acid, malonic acid, succinic acid and nitrilotriacetic acid. Alternatively, the carboxylic acid may be a dicarboxylic acid that preferentially has a nitrogen containing functional group. Preferably, the corrosion inhibitor is iminodiacetic acid. Other substances useful as passivating agents include but are not limited to benzotriazole (BTA), tolytriazole, BTA derivatives, such as BTA carboxylic acids, cystine, haloacetic acids, glucose and dodecyl mercaptan.
- The first step slurry formulation may further comprise potassium or ammonium hydroxide or other buffering agents in such amounts as to adjust the pH to the desired level.
- In a preferred embodiment, the first step slurry formulation is an aqueous mixture comprising (by weight percentage) 5 percent poly (methyl methacrylate) as the abrasive or 12.5 percent colloidal poly (methyl methacrylate) as abrasive; 0.1 percent of citric acid as activating agent; and 0.2 percent iminodiacetic acid as passivating agent. Ammonium hydroxide was used to adjust the pH to the desired level.
- The abrasive used in the preferred first-step slurry formulation of the present invention may be stabilized with a surfactant. The surfactant may be cationic or anionic. Preferably the surfactant is anionic. The surface charges that the surfactant imparts to the particles cause steric repulsion among the abrasive particles in order to keep the particles suspended in a colloidal state within the slurry composition.
- Anionic surfactants are ionic compounds, with the anion being the surface-active portion. In the present invention the surfactant is selected from the group consisting of alkyl sulfates, carboxylates and alkyl phosphates having carbon backbones in the range of from C10 to C14. Preferably the surfactant is a sulfate. More prefereably the surfactant is sodium laurel sulfate.
- By coating the abrasive particles with a surfactant or polyelectrolyte prior to incorporating the particles into a slurry system or after the particles are incorporated into a system, stage 2 agglomeration may be inhibited. The surfactant and/or polyelectrolyte will tend to remain in close proximity to the slurry particles, thereby sterically hindering the particles from coming sufficiently close to one another to enable stage 2 agglomeration.
- During the damascene process, grooves are dry etched into an insulating thin film to form an interconnect pattern. Copper or copper alloy is deposited over the entire wafer surface, reflecting the groove which is the interconnect pattern. If left unattended, the elevational disparities in each level of an integrated circuit can lead to various problems. For example, when dielectric, conductive, or semiconductive material is deposited over a topological surface having elevationally raised and recessed regions, step coverage problems may arise. Step coverage is defined as a measure of how well a film conforms over an underlying step and is expressed by the ratio of the minimum thickness of a film as it crosses a step to the nominal thickness of the film over horizontal regions.
- Although the organic polymeric abrasive particles of the present invention have been directed to poly (methyl methacrylate), it is understood that the teachings herein have applicability to other organic polymeric materials such as poly (styrene), poly (ethers), poly (siloxanes), poly (vinyl acetate), poly (vinyl alcohol), poly (ethylene), poly (imides) and substituted versions thereof. Further, the organic polymeric abrasive particles may be utilized to polish other metal surfaces such as tungsten, aluminum and titanium as well as under layers such as titanium, titanium nitride and alloys of titanium/tungsten.
- As described hereinabove the present invention provides a chemical mechanical polishing first-step slurry formulation for removing and polishing the bulk copper layer of a damascene processing step in the manufacturing of an integrated circuit.
- At the end of the first step, the bulk copper material layer has been removed exposing the underlying barrier layer. A second-step slurry is useful to remove the barrier layer and to complete the planarization of the wafer surface.
- In the second step polishing which is also called a barrier break through step, a high removal rate for barrier (i.e. Ta or TaN) and a high selectivity of barrier to copper and to dielectric is desirable. In a preferred embodiment, the second step slurry formulation achieves removal rates of >1000 Å/min for the barrier material.
- The present invention provides a two-step polishing formulation comprising first and second-step slurry compositions, wherein said first-step slurry comprises an organic polymeric abrasive and said second-step slurry comprises an abrasive, and an oxidizing agent, wherein the abrasive component is selected from the group consisting of silica, alumina, ceria and mixtures thereof.
- Further, the instant invention relates to a second-step polishing slurry formulation comprising silica as abrasive particles, an oxidizing agent, and a passivating agent. The chemistry of the second-step slurry should be stable and have a pH in the range of about 4 to 10.
- Prefereably, the particles of the second step slurry formulation are precipitated silica. The precipitated particles usually range from about 3 to 100 nm in size and can be spherical. An alternative to precipitated silica particles in the second-step slurry is fumed silica. Generally, the fumed silica has a mean particle size of less than 700 nm.
- Alternatively, and more preferred is to use colloidal silica particles of the type described. The colloidal silica particles can range from about 3 to 70 nm in size, and can be spherical. Preferentially, when the first and second step slurries employ spherical colloidal particles, the particles should have a narrow size distribution. More specifically, about 99.9% of the spherical colloidal particles should be within about 3 sigma of a mean particle size with negligible particles larger than about 500 nm.
- The second step slurry, thus, can employ either precipitated spherical silica particles in the size range of 3 to 100 nm, or fumed silica with mean particle size less than about 700 nm. These particles coupled with an oxidizing agent allow the second-step slurry to achieve high barrier material removal rates and low copper and dielectric removal rates (as shown in Table 1 heretofore). Colloidal silica, with a narrow size distribution, minimizes micro scratch defects and provides superior removal rates on barrier materials, greater than about 1000 Å/min, and low removal rates for copper and barrier. Further, spherical silica abrasives with a mean size of less than about 100 nm provide very good planarization efficiency (See Table 1, hereinabove).
- The preferred oxidizing agent for the second step slurry is hydrogen peroxide (H2O2). Alternatively, the oxidizing agent may be selected from the group consisting of: ferric nitrate (Fe(NO3)3), potassium iodate (KIO3), potassium permanganate (KmnO4), nitric acid (HNO3), ammonium chlorite (NH4ClO2), ammonium chlorate (NH4ClO3), ammonium iodate (NH4IO3), ammonium perborate (NH4BO3), ammonium perchlorate (NH4ClO4), ammonium periodate (NH4IO3), ammonium persulfate ((NH4)2S2O8), tetramethylammonium chlorite ((N(CH3)4)ClO2), tetramethylammonium chlorate ((N(CH3)4)ClO3), tetramethylammonium iodate ((N(CH3)4)IO3), tetramethylammonium perborate ((N(CH3)4)BO3), tetramethylammonium perchlorate ((N(CH3)4)ClO4), tetramethylammonium periodate ((N(CH3)4)IO4), tetramethylammonium persulfate ((N(CH3)4)S2O8), and urea hydrogen peroxide ((CO(NH2)2)H2O2).
- The passivating agent as used in the second step slurry is defined as any substance which when mixed with the second-step slurry composition, suppresses etching, while permitting a sufficient CMP rate to be obtained. Preferably, the passivating agent in the second step slurry formulation is benzotriazole (referred to hereafter as BTA) or iminodiacetic acid (referred to hereafter as IDA). Other substances useful as passivating agents include but are not limited to: tolytriazole, BTA derivatives, such as BTA carboxylic acids, cystine, haloacetic acids, glucose and dodecyl mercaptan.
- The cleaning agent or complexing agent should be a carboxylic acid. More specifically, the carboxylic acid may be chosen from the group of glycine, oxalic acid, malonic acid, succinic acid, nitrilotriacetic acid, and citric acid. Alternatively, the complexing agent may be a dicarboxylic acid that preferentially has a nitrogen containing functional group or an amine. In the most preferred form, the complexing agent for the second-step slurry composition is iminodiacetic acid or ethylenediamine.
- The second step-slurry composition may further comprise potassium or ammonium hydroxide or any weak organic base, such as tetramethyl ammonia, tetraethyl ammonia, and amines in such amounts as to adjust the pH to the desired level. Preferebly, the pH of the second-step slurry composition is from about 7.1 to 10 and more preferably, from about 7.9 to 8.8.
- In one embodiment, the second step-slurry composition comprises from about 0 to 30 percent oxidizer, about 1 to 10 percent colloidal silica or precipitated silica, about 0.01 to 5 percent complexing agent, and about 0 to 5 percent passivating agent, and water.
- In a more preferred embodiment, the second step-slurry composition comprises from about 0 to 15 percent oxidizer, about 5 to 10 percent colloidal silica or precipitated silica, about 0.05 to 1 percent complexing agent, and about 0.02 to 0.1 percent passivating agent, and water.
- In the most preferred embodiment, the second-step slurry composition, comprises 0.05 percent ethylenediamine as complexing agent and 5 percent colloidal silica.
- Although the present invention is directed to removal of copper, copper containing materials and related barriers, it is not thus limited to such. The present invention is useful for polishing and planarizing materials useful as interconnects and related barriers in semiconductor related applications including but not limited to aluminum, aluminum alloys, aluminum compounds having aluminum as its principal component, tungsten, tungsten alloys, tungsten compounds having tungsten as its principal component, (i.e., tungsten nitride), tantalum, tantalum nitride, silicon doped tantalum nitride, titanium, titanium alloys and titanium compounds having titanium as its principal component (i.e., titanium nitride and silicon doped titanium nitride).
- It is further understood that the present invention is not limited to the particular embodiments shown and described herein, but that various changes and modifications may be made without departing from the scope and spirit of the invention.
- The features, aspects and advantages of the present invention are further shown with reference to the following non-limiting examples relating to the invention.
- The pH, oxidizing agents, modifying agents, abrasive particle composition and size distribution, and weight percent were evaluated to establish a baseline for removal rates and selectivity for the second step slurry formulations.
- Several formulations of the first slurries were prepared. The static etch removal rates of these formulations are described in Table 2. As can be seen from Table 2, the first step slurry formulations of the present invention were effective in achieving acceptable static copper removal rates of 50 Å/min
TABLE 2 Removal Rate Under Static Conditions (SRR). Component Values in Weight Percent Citric SRR Slurry H2O2 Acid IDA Abrasive NH3 pH {acute over (Å)} 1 5 0.2 2.5 300 (2) 2 5 0.1 2.6 237 (2) 3 5 5 4.1 208 (5) 4 5 1 5 2 N/A (5) 5 5 0.2 5 2.3 N/A (5) 6 5 1 0.2 2.1 1600 (2) 944 (3) 7 5 1 0.2 5 2.2 N/A (5) 8 0.5 5 0.00273 3.5 1.17 (1) 9 5 0.5 0.00523 3.5 661 (1) 10 5 0.2 0.00298 3.7 150 (1) 90 (2) 11 5 0.5 0.2 0.00891 3.5 640 (1) 501 (3) 12 5 0.5 5 0.00529 3.5 793 (1) 13 5 0.2 5 0.003 3.6 149 (1) 98 (2) 70 (5) 14 5 0.5 0.2 5 0.00885 3.5 858 (1) 627 (2) 453 (5) 15 10 0.5 0.2 5 0.00912 3.5 1029 (1) 578 (2) 468 (5) 439 (10) 16 1 0.5 0.2 5 0.00851 3.5 855 (1) 666 (2) 563 (5) 520 (10) 17 5 0.25 0.5 5 0.01 3.5 601 (1) 488 (2) 450 (5) 18 5 0.25 1 5 0.017 3.5 836 (1) 561 (2) 377 (5) 19 5 0.25 0.5 5 0.44 3.5 960 (1) 504 (2) 300 (5) 298 (10) 20 5 0.1 0.1 5 0.022 3.5 260 (1) 181 (2) 159 (5) 199 (1) 21 5 0.1 0.2 5 0.032 3.5 424 (1) 273 (2) 138 (5) 22 5 5 4 23 5 0.2 5 2.3 24 5 0.2 5 0.027 3.5 25 5 0.1 0.2 5 0.013 2.5 528 (1) 516 (2) 323 (5) 26 5 0.1 0.2 5 0.028 3 400 (1) 285 (2) 27 5 0.1 0.2 5 0.041 3.5 273 (1) 178 (2)
The numbers in parentheses indicate the length of soaking time for static etching rate study.
- Table 3 outlines twelve formulations and polishing conditions for the second step polishing slurry tested on Ta, TaN, Cu and thermal oxide blanket wafers (Table 4). The various formulations comprise between 0 to 13 percent hydrogen peroxide (H2O2) as oxidizing agent, 0 to 0.05 percent ethylenediamine as complexing agent, between 0 to 0.1 percent BTA, or between 0 to 0.2 percent iminodiacetic acid as passivating agent, and between 5 to 10 percent colloidal silica or 5 to 10 percent precipitated silica. The pH of the formulations ranged from 6.8 to 8.8. The polishing conditions ranged from table speed (TS) of 45 to 125 rpm, quill speed (QS) of 42 to 116 rpm, down force (DF) of 3.5 to 4 psi, and a flow rate (FR) of 160 mL/min.
TABLE 3 Compositions and Polishing Conditions for Second Step Slurry Colloidal Precipitated Polish Conditions Slurry: H2O2 EDA BTA IDA Silica Silica KOH pH TS/QS/DF/FR 1 0.05 5 8.8 125/116/4.0/160 2 5 * 6.8 125/116/4.0/160 3 0.5 0.05 5 6.8 45/42/3.5/160 4 13 10 8.1 125/116/4.0/160 5 13 0.2 10 6.8 125/116/4.0/160 6 13 10 * 6.7 45/42/3.5/160 7 13 10 7.9 45/42/4.0/160 8 13 5 8 45/42/4.0/160 9 13 15 8.1 45/42/4.0/160 10 13 0.02 10 8 45/42/4.0/160 11 13 0.005 10 8 45/52/4.0/160 12 0.5 0.1 5 * 8 45/42/4.0/160
* chemical used to adjust the pH
-
TABLE 4 Removal Rates (Å/min) and Selectivities Using Second Step Slurry Compositions Outlined in Table 3. Slur- ry: Cu Ta TaN PETEOS Ta:Cu:Oxide TaN:Cu:oxide 1 116 130 1167 127 1:1:1 1:0.1:0.1 2 29 42 35 N/A 1:0.69 1:0.83 3 1071 567 622 43 1:1.89:0.076 1:1.72:0.069 4 138 562 659 667 1:0.25:1.19 1:0.21:1.01 5 812 562 1082 807 1:0.69:0.70 1:0.75:0.75 6 62 28 47 50 1:2.2:1.79 1:1.32:1.06 7 123 512 203 195 1:0.24:0.38 1:0.61:0.96 8 102 75 121 52 1:1.4:1.7 1:0.85:0.43 9 164 432 435 447 1:0.48:1.31 1:0.38:1.03 10 “1” 166 232 172 1:0.006:1.04 1:0.0043:0.74 11 “1” 162 197 170 1:0.0062:1.05 1:0.0051:0.86 12 “1” 60 81 31 1:0.017:0.52 1:0.012:0.38 - As Table 4 indicates, a selectivity of TaN:Cu:PETEOS of 10:1:1 was obtained using Slurry 1. When Ta is the barrier material, two useful formulations were discovered. The first one was based on second step formulation, Slurry 7 as listed in this Table, which includes 13 wt % of H2O2 and 10 wt % of a precipitated silica abrasive. To this slurry, BTA (passivating agent) was added with concentrations of 0.005 wt % (Slurry 11) and 0.02 wt % (Slurry 10). With the modified Slurry 7 formulation, removal rates for Ta, TaN, Cu and PETEOS have all been reduced, with the largest decrease in copper. However, a selectivity of Ta:Cu of 166:1 has been obtained. The
Slurry 12 formulation which employed a 5 wt % colloidal silica, 0.5 wt. % H2O2, 0.1.wt. % BTA with a pH of 8 obtained a Ta:Cu:PETEOS of 60:1:30. - The poly (methyl methacrylate) colloid of the step one slurry formulation shows outstanding chemical and mechanical stability. The particles did not show any significant changes in terms of particle size and particle size distribution after aging two months, that is, the mean particle size remains about 45 nm and the range of distribution is from about 5 nm to 100 nm.
- The first and second slurries described herein, may also be used in a method of chemical mechanical polishing as described above. Also, while this invention has been disclosed and discussed primarily in terms of specific embodiments thereof, it is not intended to be limited thererto. Other modifications and embodiments will be apparent to the skilled worker in the art.
Claims (21)
1.-50. (canceled)
51. A chemical mechanical polishing slurry comprising an abrasive that consists essentially of organic polymer, wherein said slurry is adapted for chemical mechanical polishing.
52. The chemical mechanical polishing slurry of claim 51 , further comprising an oxidizing agent.
53. The chemical mechanical polishing slurry of claim 52 , wherein said oxidizing agent comprises a species selected from the group consisting of hydrogen peroxide, iodic acid, potassium iodate, ferric nitrate, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, 4- methylmorpholine N-oxide, pyridine-N-oxide, and urea.
54. The chemical mechanical polishing slurry according to claim 51 , wherein the organic polymer comprises poly (methyl methacrylate).
55. The chemical mechanical polishing slurry according to claim 51 , wherein the organic polymer further comprises a polymeric material selected from the group consisting of a poly(styrene), a poly(ether), a poly(siloxane), a poly(vinyl acetate), a poly (vinyl alcohol), a poly(vinylbenzene), substituted versions, and mixtures thereof.
56. The chemical-mechanical polishing slurry according to claim 51 , wherein said abrasive has a particle size distribution in a range of from about 10 to 75 nm.
57. The chemical mechanical polishing slurry according to claim 51 , further comprising an activating agent.
58. The chemical mechanical polishing slurry according to claim 57 , wherein the activating agent comprises an acid selected from the group consisting of phosphoric acid, iodic acid, citric acid, and malonic acid.
59. The chemical mechanical polishing slurry according to claim 51 , further comprising from about 0.1 to 2 percent surfactant.
60. The chemical mechanical polishing slurry according to claim 59 , wherein said surfactant is selected from the group consisting of non-ionic, cationic and anionic.
61. The chemical mechanical polishing slurry according to claim 51 , further comprising a passivating agent.
62. The chemical mechanical polishing slurry according to claim 51 , further comprising a complexing agent.
63. The chemical mechanical polishing slurry according to claim 51 , having a pH in a range of from about 0.1 to 6.9.
64. The chemical mechanical polishing slurry according to claim 61 , wherein the passivating agent comprises a species selected from the group consisting of glycine, oxalic acid, malonic acid, succinic acid, iminodiacetic acid, benzotriazole, and nitrilotriacetic acid.
65. A chemical mechanical polishing slurry, said slurry comprising an abrasive that consists of organic polymer having a particle size distribution in a range of from about 10 to 75 nm.
66. The chemical mechanical polishing slurry of claim 65 , wherein the organic polymer comprises poly (methyl methacrylate).
67. A method for chemical mechanical polishing a semiconductor wafer substrate, said method comprising the steps of:
a) chemical mechanical polishing a semiconductor wafer substrate surface with the chemical mechanical polishing slurry of claim 51; and
b) chemical mechanical polishing said semiconductor wafer substrate surface with a second slurry, wherein said second slurry has a higher removal rate on barrier material than on copper material compared to said first chemical mechanical polishing slurry.
68. A method for chemical mechanical polishing a semiconductor wafer substrate, said method comprising chemical mechanical polishing copper material from the semiconductor wafer substrate surface using the chemical mechanical polishing slurry of claim 51 .
69. A method for chemical mechanical polishing a semiconductor wafer substrate comprising:
a) chemical mechanical polishing a semiconductor wafer substrate surface with the chemical mechanical polishing slurry of claim 65; and
b) chemical mechanical polishing said semiconductor wafer substrate surface with a second slurry, wherein said second slurry has a higher removal rate on barrier material than copper material.
70. A method for chemical mechanical polishing a semiconductor wafer substrate, said method comprising chemical mechanical polishing copper material from the semiconductor wafer substrate surface with the chemical mechanical polishing slurry of claim 65.
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